JP2022529994A5 - - Google Patents

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Publication number
JP2022529994A5
JP2022529994A5 JP2021562345A JP2021562345A JP2022529994A5 JP 2022529994 A5 JP2022529994 A5 JP 2022529994A5 JP 2021562345 A JP2021562345 A JP 2021562345A JP 2021562345 A JP2021562345 A JP 2021562345A JP 2022529994 A5 JP2022529994 A5 JP 2022529994A5
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JP
Japan
Prior art keywords
die
memory
memory controller
package substrate
chip structure
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JP2021562345A
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English (en)
Japanese (ja)
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JP7668745B2 (ja
JP2022529994A (ja
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Priority claimed from US16/392,170 external-priority patent/US11282824B2/en
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Publication of JP2022529994A publication Critical patent/JP2022529994A/ja
Publication of JP2022529994A5 publication Critical patent/JP2022529994A5/ja
Priority to JP2025066561A priority Critical patent/JP2025114585A/ja
Application granted granted Critical
Publication of JP7668745B2 publication Critical patent/JP7668745B2/ja
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JP2021562345A 2019-04-23 2020-03-31 プログラマブル集積回路を有するダイ上に積層されたメモリダイを含むマルチチップ構造 Active JP7668745B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025066561A JP2025114585A (ja) 2019-04-23 2025-04-15 プログラマブル集積回路を有するダイ上に積層されたメモリダイを含むマルチチップ構造

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/392,170 US11282824B2 (en) 2019-04-23 2019-04-23 Multi-chip structure including a memory die stacked on die having programmable integrated circuit
US16/392,170 2019-04-23
PCT/US2020/026032 WO2020219242A1 (en) 2019-04-23 2020-03-31 Multi-chip structure including a memory die stacked on a die having a programmable integrated circuit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025066561A Division JP2025114585A (ja) 2019-04-23 2025-04-15 プログラマブル集積回路を有するダイ上に積層されたメモリダイを含むマルチチップ構造

Publications (3)

Publication Number Publication Date
JP2022529994A JP2022529994A (ja) 2022-06-27
JP2022529994A5 true JP2022529994A5 (https=) 2023-12-05
JP7668745B2 JP7668745B2 (ja) 2025-04-25

Family

ID=70476331

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021562345A Active JP7668745B2 (ja) 2019-04-23 2020-03-31 プログラマブル集積回路を有するダイ上に積層されたメモリダイを含むマルチチップ構造
JP2025066561A Pending JP2025114585A (ja) 2019-04-23 2025-04-15 プログラマブル集積回路を有するダイ上に積層されたメモリダイを含むマルチチップ構造

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025066561A Pending JP2025114585A (ja) 2019-04-23 2025-04-15 プログラマブル集積回路を有するダイ上に積層されたメモリダイを含むマルチチップ構造

Country Status (7)

Country Link
US (2) US11282824B2 (https=)
EP (1) EP3925001A1 (https=)
JP (2) JP7668745B2 (https=)
KR (2) KR20250077466A (https=)
CN (2) CN121751653A (https=)
TW (1) TWI836054B (https=)
WO (1) WO2020219242A1 (https=)

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JP2020145231A (ja) 2019-03-04 2020-09-10 キオクシア株式会社 半導体装置およびその製造方法
US11282824B2 (en) * 2019-04-23 2022-03-22 Xilinx, Inc. Multi-chip structure including a memory die stacked on die having programmable integrated circuit
CN113517271A (zh) * 2021-05-20 2021-10-19 浙江毫微米科技有限公司 一种带有堆叠存储器的集成电路结构
US11715731B2 (en) * 2021-08-29 2023-08-01 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure and method of forming the same
CN113722268B (zh) * 2021-09-02 2024-07-19 西安紫光国芯半导体有限公司 一种存算一体的堆叠芯片
CN113793632B (zh) * 2021-09-02 2024-05-28 西安紫光国芯半导体有限公司 非易失可编程芯片
CN113745197B (zh) * 2021-09-03 2024-08-30 西安紫光国芯半导体股份有限公司 一种三维异质集成的可编程阵列芯片结构和电子器件
US12489061B2 (en) 2022-06-27 2025-12-02 Texas Instruments Incorporated Semiconductor device with multiple dies
US12505068B2 (en) 2023-06-28 2025-12-23 Xilinx, Inc. Tiled compute and programmable logic array
CN117222234B (zh) * 2023-11-07 2024-02-23 北京奎芯集成电路设计有限公司 一种基于UCIe接口的半导体器件
CN118409997B (zh) * 2024-04-29 2025-04-15 清华大学 多芯片集成封装高密度算力模组的装置

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US8356138B1 (en) 2007-08-20 2013-01-15 Xilinx, Inc. Methods for implementing programmable memory controller for distributed DRAM system-in-package (SiP)
US7899983B2 (en) * 2007-08-31 2011-03-01 International Business Machines Corporation Buffered memory module supporting double the memory device data width in the same physical space as a conventional memory module
US7701251B1 (en) 2008-03-06 2010-04-20 Xilinx, Inc. Methods and apparatus for implementing a stacked memory programmable integrated circuit system in package
TW201225249A (en) * 2010-12-08 2012-06-16 Ind Tech Res Inst Stacked structure and stacked method for three-dimensional integrated circuit
KR20120119960A (ko) 2011-04-21 2012-11-01 삼성전자주식회사 마이크로 범프 연결성을 테스트할 수 있는 반도체 장치
CN104205234B (zh) * 2012-03-30 2017-07-11 英特尔公司 用于存储器电路测试引擎的通用数据加扰器
DE112012006161B4 (de) * 2012-03-30 2020-09-17 Intel Corporation Integrierter Selbsttest für Stapelspeicherarchitektur
US8737108B2 (en) * 2012-09-25 2014-05-27 Intel Corporation 3D memory configurable for performance and power
US9065722B2 (en) 2012-12-23 2015-06-23 Advanced Micro Devices, Inc. Die-stacked device with partitioned multi-hop network
US9135185B2 (en) 2012-12-23 2015-09-15 Advanced Micro Devices, Inc. Die-stacked memory device providing data translation
US9286948B2 (en) 2013-07-15 2016-03-15 Advanced Micro Devices, Inc. Query operations for stacked-die memory device
KR20230151553A (ko) * 2016-06-27 2023-11-01 애플 인크. 조합된 높은 밀도, 낮은 대역폭 및 낮은 밀도, 높은 대역폭 메모리들을 갖는 메모리 시스템
JP2018074065A (ja) * 2016-11-01 2018-05-10 富士通株式会社 半導体装置
KR102624199B1 (ko) 2016-11-17 2024-01-15 에스케이하이닉스 주식회사 관통 실리콘 비아 기술을 적용한 반도체 패키지
KR102650497B1 (ko) * 2017-02-28 2024-03-25 에스케이하이닉스 주식회사 적층형 반도체 장치
US20190067034A1 (en) * 2017-08-24 2019-02-28 Micron Technology, Inc. Hybrid additive structure stackable memory die using wire bond
US11282824B2 (en) * 2019-04-23 2022-03-22 Xilinx, Inc. Multi-chip structure including a memory die stacked on die having programmable integrated circuit

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