JP2022529385A - Process chambers and semiconductor processing devices - Google Patents

Abstract

The present application provides process chambers and semiconductor processing devices. The process chamber includes a chamber body provided with a base and a first ejector pin mechanism therein, a shutter disk garage communicating with the inside of the chamber body, and a shutter disk. The process chamber further includes a transfer mechanism including a transfer arm and a temperature control device, the transfer arm can move between the chamber body and the shutter disk garage to support the shutter disk, and the temperature control device , Placed in the transfer arm, moved into the chamber body, to the object to be processed supported by the first ejector pin mechanism when positioned opposite to the object to be processed. On the other hand, it is configured to perform temperature control. In the process chamber provided by the present application, temperature control efficiency and temperature control uniformity can be improved without adversely affecting other components in the chamber. [Selection diagram] FIG. 1A

Description

The present disclosure relates to the field of semiconductor processing techniques, in particular to process chambers and semiconductor processing devices.

In the process of performing a thin film deposition process with a magnetron sputtering device, to cover the base when a new target needs to be bombarded or the chamber needs to be preheated to reduce wafer wear. Shutter discs are commonly used. When the normal process is performed, the shutter disc needs to be moved into the shutter disc garage that communicates with the chamber. Specifically, a transfer arm is commonly used to perform a rotational movement to achieve shutter disk position switching between the chamber body and the shutter disk garage.

Existing copper filling processes typically require the addition of a heat source, which can be an infrared tube, inside the chamber to ensure that the copper material can be successfully filled into the through-hole structure. There is. During the process, the wafer is first placed on the base for the deposition of the copper seed layer, then the wafer is pushed up from the base to a position higher than the heat radiation source by the ejector pin mechanism, and the temperature of the wafer is raised to the copper material. The back surface of the wafer is heated by a heat radiation source until it rises to a copper recirculation temperature (typically above 350 ° C.) that can ensure that it can be successfully filled into the through-hole structure, and finally the ejector. The pin mechanism is lowered to return the wafer to the base for cryogenic cooling. The cycle of the above steps is carried out until the copper material is completely filled into the through hole structure.

However, in existing techniques, the heat source is generally located around the chamber and far away from the wafer, which is low heating efficiency, low heating rate, and when heating the wafer. It results in poor heating uniformity, thereby affecting process uniformity and production capacity. Although it is possible to improve heating efficiency by increasing the output of the heat source, the following problems arise: Increasing the output of the heat source causes components such as the chamber body and shield around the heat source. The temperature of the radiant can easily be increased, which not only affects the life of the component, but also requires additional special water cooling design, resulting in increased device cost and structural complexity.

To solve at least one technical problem in existing technology, the present disclosure is a process in which temperature control efficiency and temperature control uniformity can be improved and other components in the process chamber are not adversely affected. Provide chambers and semiconductor processing devices.

To achieve the above object, the present disclosure provides a process chamber, in which the process chamber communicates with a chamber body provided with a base and a first ejector pin mechanism and the interior of the chamber body. The shutter disk garage and the shutter disk are included, and the process chamber further includes a transfer mechanism including a transfer arm and a temperature control device. The transfer arm can move between the chamber body and the shutter disk garage to support the shutter disk, the temperature control device is placed in the transfer arm and the transfer arm is moved inside the chamber body. It is configured to perform temperature control on the workpiece to be processed supported by the first ejector pin mechanism when it is located at a position opposite to the workpiece to be processed.

Optionally, when the transfer arm is moved inside the chamber body and located in a position opposite to the workpiece to be processed, one surface of the transfer arm and one surface of the workpiece to be processed face each other. There is a height difference between the two, and the temperature control device is exposed from the surface of the transport arm opposite the workpiece to be processed in order to perform heat exchange with the workpiece to be processed through radiation.

As an option, when the transfer arm is moved inside the chamber body and located at a position opposite to the work piece to be processed, the work piece to be processed is placed up to the position where the work piece to be processed comes into contact with the transfer arm. Moved up or down by the ejector pin mechanism of 1, the temperature control device controls the temperature of the workpiece to be processed through heat exchange.

As an option, the process chamber further includes a second ejector pin mechanism located in the shutter disk garage, between the second ejector pin mechanism and the transfer arm when the transfer arm is located in the shutter disk garage. It is configured to move up or down to carry the shutter disc.

Optionally, the contour of the orthographic projection of the transfer arm on a horizontal plane does not cause the transfer arm to collide with the first ejector pin mechanism when the transfer arm is moved into the chamber body, and the transfer arm shutters. The shape is set so that it does not collide with the second ejector pin mechanism when moved into the disk garage.

As an option, the height difference ranges from 20 mm to 400 mm.

Optionally, the transfer arm includes a drive, a vertically arranged rotating shaft, and a horizontal arm located at the top of the rotating shaft, the drive rotating to rotate about the axis of the rotating shaft. It is configured to drive the shaft to move the horizontal arm between the chamber body and the shutter disc garage, the horizontal arm is capable of supporting the shutter disc, and the temperature control device is on the horizontal arm. Be placed.

Optionally, the temperature control device includes a heating element and an electrical connection wire connected to the heating element, the heating element being placed in a horizontal arm, allowing the electrical connection wire to be drawn out of the chamber body. A passage is arranged in the rotating shaft so as to be.

Optionally, a cooling passage for delivering cooling water is located in the horizontal arm, a water inflow channel and a water outflow channel are located in the rotating shaft, the first end of the water inflow channel and the first of the water outflow channels. The ends are connected to the two ends of the cooling passage, respectively, and the second end of the water inflow channel and the second end of the water outflow channel are both located on a portion of the rotating shaft outside the chamber body. ..

Optionally, the process chamber is a deposition chamber.

As another technical solution, the present disclosure further provides a semiconductor processing device including the process chamber described above.

The present disclosure has the following beneficial effects: In the process chamber provided by the present disclosure, the temperature control device is located in the transfer arm, the transfer arm is inside the chamber body, and the first ejector pin mechanism. Performs temperature control on the workpiece to be processed when it is located in the opposite position to the workpiece supported by it, and therefore the temperature control device and the workpiece compared to existing techniques. The temperature control distance to the workpiece can be reduced and the rate of temperature change can be improved, thereby improving the temperature control efficiency and production capacity, while the temperature. Control uniformity can be improved, thereby improving process uniformity. In addition, by placing the temperature control device in the transfer arm, the temperature control device is kept away from the parts around the chamber (chamber body, shield, etc.), which prevents the parts from becoming overheated. This allows the adverse effects on the parts to be eliminated.

Since the semiconductor processing device provided by the present disclosure employs the process chamber described above, heating efficiency and heating uniformity can be improved without adversely affecting other components in the process chamber.

It is sectional drawing of the process chamber of the state by 1st Embodiment of this disclosure. It is sectional drawing of the process chamber of another state by 1st Embodiment of this disclosure. It is a top sectional view of the transport arm according to 1st Embodiment of this disclosure. It is a top view of the transfer arm at the time of supporting a shutter disk by 1st Embodiment of this disclosure. It is another top sectional view of the transfer arm according to 1st Embodiment of this disclosure. It is sectional drawing of the process chamber by the 2nd Embodiment of this disclosure. FIG. 3 is another cross-sectional view of the process chamber according to the second embodiment of the present disclosure. FIG. 3 is a cross-sectional view of a process chamber according to a third embodiment of the present disclosure.

The following disclosures provide various implementation forms or examples that can be used to implement the different features of the present disclosure. The components and specific examples of the configurations described below are intended to simplify this disclosure. It should be understood that the following description is for illustration purposes only and is not intended to limit this disclosure. For example, in the following description, the formation of the first feature above or above the second feature is, according to some embodiments, a direct contact between the first feature and the second feature. And, according to other embodiments, may also include possible indirect contact between the first feature and the second feature due to the formation of additional components. In addition, in multiple embodiments of the present disclosure, the same symbols and / or numbers of the components may be used. However, the same symbols and / or numbers are so used for the purposes of brevity and clarity and do not indicate the relationship between the different embodiments and / or configurations discussed.

Further, as used herein, such as "under", "below", "lower", "over", "above", and similar terms. The term used to describe spatially relative positions is used to facilitate the description of the relationship between one element or feature in a drawing and another one or more elements or features. .. In addition to indicating the orientations shown in the drawings, these terms can further suggest various different orientations of the device in use or in operation. The device may be positioned in the other direction (eg, the device is rotated 90 degrees or is located in another direction) and these terms should be used to give the corresponding explanation. be.

All numerical ranges and parameters used to define the broad scope of the present disclosure are approximate values, but the relevant values in a particular embodiment are provided herein as accurately as possible. However, all values essentially and necessarily include standard deviations resulting from the individual test methods. As used herein, the term "about" generally refers to a variation of 10%, 5%, 1%, or 0.5% of a specified value. Alternatively, the term "about" indicates that the actual value is within the acceptable standard deviation of the mean. The specific representation of "about" will be determined in accordance with the considerations of one of ordinary skill in the art to which this disclosure belongs. Except for experimental examples or unless otherwise stated, to illustrate all ranges, quantities, values, and percentages used herein (eg, amount of material, duration, temperature, operating conditions, and ratios). It should be understood that (as used in) is modified by "about". Therefore, unless otherwise stated, all numerical parameters disclosed in the present description and the appended claims are approximate values and can be changed as necessary. At the very least, these numerical parameters should be understood as values that have specified significant digits and are obtained by applying the general carry method. Numerical ranges herein are represented from one endpoint to another, or between two endpoints, and unless otherwise stated, all numerical ranges described herein include endpoints.
[First Embodiment]

Referring to FIGS. 1A and 1B, embodiments provide a process chamber applicable to the deposition chamber, which in particular communicates with the chamber body 1 and the interior of the chamber body 1 shutter disk garage 2. , A shutter disk 10, and a transport mechanism. The base 3 and the first ejector pin mechanism 4 are arranged in the chamber body 1, and the base 3 is configured to support the workpiece 5 to be processed when the thin film deposition process is performed, and the first ejector. The pin mechanism 4 is configured to move the workpiece 5 to be processed up or down in order to convey it between the first ejector pin mechanism 4 and the base 3. Specifically, the first ejector pin mechanism 4 includes at least three ejector pins arranged around the axis of the base 3 at intervals, and an elevating mechanism connected to at least three ejector pins. Driven by an elevating mechanism, at least three ejector pins are simultaneously moved up to the highest position, where their upper ends are higher than the base 3, or down to the lowest position, whose upper ends are lower than the base 3. Can be done. In the process of moving the ejector pin up to the highest position, the ejector pin can push the workpiece 5 to be processed up from the base 3, and in the process of moving the ejector pin down to the lowest position, the object to be processed The work piece 5 can be supported on the base 3.

The transfer mechanism includes a transfer arm 6 capable of moving between the chamber body 1 and the shutter disk garage 2 and a temperature control device 8. In an embodiment, referring to FIGS. 1A and 1B, the transport arm 6 includes a drive device 7, a vertically arranged rotary shaft 61, and a horizontal arm 62 located at the upper end of the rotary shaft 61 to drive. The device 7 is connected to the rotary shaft 61 and is configured to drive the rotary shaft 61 so as to rotate along the axis of the rotary shaft 61. The drive device 7 may be a motor, air cylinder or hydraulic cylinder capable of providing rotational power. As an option, the drive device 7 is located outside the chamber and the lower end of the rotary shaft 61 extends from the bottom of the chamber body 1 to the outside of the chamber body 1 and is connected to the drive device 7. Driven by the drive device 7, the rotary shaft 61 rotates the horizontal arm 62 around the rotary shaft 61 into the chamber body 1 or the shutter disc 10.

In an embodiment, the process chamber further comprises a second ejector pin mechanism 9 disposed in the shutter disk garage 2 with the second ejector pin mechanism 9 when the transfer arm 6 is located in the shutter disk garage 2. It is configured to move up or down to transport the shutter disk 10 to and from the transfer arm 6. The second ejector pin mechanism 9 has a structure similar to that of the first ejector pin mechanism 4, and includes at least three ejector pins and an elevating mechanism connected to at least three ejector pins.

As shown in FIGS. 1A to 2B, the transfer arm 6 supports the shutter disk 10 and can transfer the shutter disk 10 into the chamber body 1 or the shutter disk garage 2 through rotation. When the transfer arm 6 supports the shutter disk 10 and rotates into the shutter disk garage 2, the second ejector pin mechanism 9 pushes the shutter disk 10 upward from the transfer arm 6 until it reaches the position C1 shown in FIG. 1B. You can move. At this time, the shutter disk 10 is separated from the transfer arm 6, so that the transfer arm 6 can rotate independently in the chamber body 1 without supporting the shutter disk 10.

In practice, the second ejector pin mechanism 9 may not be provided to allow the transfer arm 6 to rotate independently into the chamber body 1 without supporting the shutter disk 10. Other methods are adopted. For example, the shutter disc 10 is removed by opening the chamber.

When the transfer arm 6 is moved inside the chamber body 1 and is located at a position opposite to the workpiece 5 to be processed supported by the first ejector pin mechanism 4, one surface of the transfer arm 6 facing each other. There is a height difference between the surface and one surface of the workpiece 5 to be processed. Indeed, temperature control can be further achieved by adjusting the height difference. The temperature control device 8 is exposed from the surface of the transport arm 6 opposite to the workpiece 5 to be processed in order to perform heat exchange with the workpiece 5 to be processed through radiation.

In an embodiment, the temperature control device 8 radiates heat toward the workpiece 5 to be processed when the transfer arm 6 is moved inside the chamber body 1 and is located below the workpiece 5 to be processed. It is exposed from the upper surface of the transport arm 6. The temperature control device 8 includes a heating element 81 and an electric connection wire 82 connected to the heating element 81, and the heating element 81 heats the workpiece 5 to be processed, such as an infrared tube or a heating wire. It can be a heating element that can radiate. Optionally, as shown in FIG. 2A, the heating element 81 is in the shape of a spiral and is relatively evenly distributed over the top surface of the horizontal arm 62 to improve heating uniformity.

In an embodiment, the orthographic contour 621 of the transport arm 6 on a horizontal plane does not collide with the first ejector pin mechanism 4 when the transport arm 6 is moved into the chamber body 1 and is in the shutter disk garage 2. The shape is set so that it does not collide with the second ejector pin mechanism 9 when it is moved to. One shape of contour 621 is shown in FIG. 2A, which is such that the horizontal arm 62 is inside the three ejector pins through the gap between the two adjacent ejector pins without colliding with the three ejector pins. It can be guaranteed that it can be moved to. When the horizontal arm 62 is moved into the shutter disk garage 2, the three ejector pins of the second ejector pin mechanism 9 are located outside the contour of the horizontal arm 62 and push the shutter disk 10 up from the horizontal arm 62. .. Indeed, in practice, the contour of the transfer arm 6 may be set to other shapes as long as the transfer arm 6 does not collide with the ejector pin of the second ejector pin mechanism 9.

It should be noted that the present disclosure is not limited to the method of designing the contour of the transfer arm 6 to ensure that the transfer arm 6 does not collide with the ejector pin. For example, passages may be arranged in the transfer arm 6 to allow the ejector pins to penetrate, so that each ejector pin collides with the transfer arm in the process of rotating the transfer arm 6 into the shutter disk garage 2. It is possible to enter the aisle through the opening of the aisle and move out of the aisle through the opening of the aisle in the process of rotating the transfer arm 6 into the chamber body 1.

When the copper filling process is performed in the process chamber provided by the embodiment, the workpiece to be processed is first placed on the base 3 for the deposition of the copper seed layer, then FIG. 1B. As shown in the figure, the wafer is pushed up from the base 3 to the highest position A1 by the first ejector pin mechanism 4, the shutter disk 10 is pushed up from the transport arm 6 by the second ejector pin mechanism 9, and then the figure. As shown in 1A, the transfer arm 6 is driven by the drive device 7 to rotate into the chamber body 1 and is located at position B1 below the wafer, where the temperature of the wafer is the temperature of the copper material through the holes. The back surface of the wafer is heated by the temperature control device 8 until it rises to a copper recirculation temperature (typically above 350 ° C.) that can ensure that it can be successfully filled into the structure. After the heating is complete, the transfer arm 6 is driven by the drive device 7 to rotate into the shutter disk garage 2, and the first ejector pin mechanism 4 returns the wafer to the base 3 for cryogenic cooling. Moved down to the lowest position. The cycle of the above steps is carried out until the copper material is completely filled into the through hole structure.

When a new target in the process chamber needs to be impacted or the chamber needs to be preheated, a second ejector pin mechanism 9 is down to place the shutter disk 10 on the transfer arm 6. The transport arm 6, which is then moved to and supports the shutter disk, is driven by the drive device 7 to rotate into the chamber body 1 and onto the base 3 to cover the base 3.

As an option, the height difference H between the surface of the transport arm 6 and the facing surface of the workpiece 5 to be processed ranges from 20 mm to 400 mm. In such a range, the heating efficiency can be guaranteed and the heating force of the temperature control device 8 can be prevented from becoming too high, thereby adversely affecting the components around the temperature control device 8. It can be avoided. As an option, the output power of the temperature control device 8 is 500 W or more.

In the embodiment, optionally, a passage is arranged in the rotating shaft 61 so that the electrical connection line 82 of the temperature control device 8 can be drawn out from the chamber body 1, and the electrical connection line 82 is in the chamber body 1. Prevents exposure to.

In the embodiment, as an option, as shown in FIG. 3, a cooling passage 622 for sending cooling water is arranged in the horizontal arm 62. The cooling aisle 622 may be arranged under the temperature control device 8 to cool the transport arm 6. Further, a water inflow passage 623 and a water outflow passage 624 are arranged in the rotary shaft 61, and the first end of the water inflow passage 623 and the first end of the water outflow passage 624 are located at two ends of the cooling passage 622. Connected to each other, the second end of the water inflow passage 623 and the second end of the water outflow passage 624 are both located on a portion of the outer rotary shaft 61 of the chamber body 1. That is, the cooling passage is pulled out from the chamber main body 1 through the rotary shaft 61, and the cooling passage is prevented from being exposed in the chamber main body 1.

Compared to existing techniques, according to the process chamber provided by the embodiments of the present disclosure, the temperature control distance between the temperature control device 8 and the workpiece 5 to be processed can be reduced and the temperature is controlled. The rate can be increased, thereby improving the temperature control efficiency and production capacity, while the temperature control uniformity can be improved, thereby improving the process uniformity. Can be done. In addition, by disposing the temperature control device 8 in the transfer arm 6, the temperature control device 8 is kept away from the parts around the chamber (chamber body, shield, etc.), which causes the parts to become overheated. It can be avoided and the adverse effect on the parts can be eliminated.
[Second Embodiment]

Referring to FIG. 4A, an embodiment provides a process chamber, which is also like the process chamber provided in the first embodiment, with a chamber body 1, a shutter disk garage 2, and a shutter disk 10. , And transport mechanisms, they have the same structure and function as those described in the first embodiment, which are not described in detail herein. Only the differences between the second embodiment and the first embodiment will be described in detail below.

Specifically, the transfer arm 6 is located on the workpiece to be processed supported by the first ejector pin mechanism 4 when it is arranged inside the chamber body 1. As shown in FIG. 4A, the highest position A2 of the first ejector pin mechanism 4 is lower than the position B2 of the transfer arm 6 inside the chamber body 1. Moreover, the temperature control device 8 is exposed from the lower surface of the transport arm 6 in order to perform heat exchange with the workpiece 5 to be processed through radiation. In this way, temperature control of the workpiece 5 to be processed can be achieved.

As an option, the height difference H between one surface of the transport arm 6 and one surface of the workpiece 5 to be processed, which face each other, ranges from 20 mm to 400 mm.

In embodiments, the process chamber is a second ejector located in the shutter disk garage 2 to allow the transfer arm 6 to rotate independently into the chamber body 1 without supporting the shutter disk 10. Further includes a pin mechanism 9. However, since the temperature control device 8 is exposed from the lower surface of the transport arm 6, it is possible not to provide the second ejector pin mechanism 9. As shown in FIG. 4B, the transfer arm 6 supporting the shutter disk 10 can be rotated into the chamber body 1, and the temperature control device 8 can be used while the transfer arm 6 supports the shutter disk 10. , Heat can be radiated toward the front surface of the workpiece 5 to be processed.

Other structures and functions of the process chamber provided by the embodiments are the same as those specifically described in the first embodiment and are therefore not repeated herein.
[Third Embodiment]

Referring to FIG. 5, the embodiment provides a process chamber, which also has the chamber body 1 and the shutter disk garage 2 as in the process chambers provided in the first and second embodiments. , And a shutter disk 10, and they have the same structure and function as those described in the first and second embodiments, which are not described in detail here. Only the differences between this embodiment and the first and second embodiments will be described in detail below.

Specifically, when the transfer arm 6 is moved to the inside of the chamber body 1 and is located at a position opposite to the object to be processed 5 conveyed by the first ejector pin mechanism 4, the object to be processed is to be processed. 5 can be moved up or down by the first ejector pin mechanism 4 to a position where the workpiece 5 to be processed comes into contact with the transfer arm 6, and the temperature control device 8'is heat exchange (heat conduction). The temperature of the workpiece 5 to be processed is controlled through. The temperature control device 8'includes heating elements such as heating wires or heating electrodes.

In practical use, the temperature control device 8'can be in direct contact with the workpiece 5 to be processed, or the temperature control device 8'heats the transport arm 6 without contacting the workpiece 5 to be processed. By doing so, the workpiece 5 to be treated can be indirectly heated.

In an embodiment, the transfer arm 6 is located below the workpiece 5 to be processed supported by the first ejector pin mechanism 4 when placed inside the chamber body 1, but the present disclosure is limited thereto. Please note that it will not be done. In practical use, the transfer arm 6 may be located on the workpiece 5 to be processed when placed inside the chamber body 1, and then the workpiece 5 to be processed is the first ejector pin mechanism. It is pushed up by 4 and brought into contact with the transfer arm 6.

As another technical solution, embodiments of the present disclosure further provide a semiconductor processing device comprising a process chamber provided by any of the embodiments of the present disclosure.

The semiconductor processing device can be a magnetron sputtering device or other physical vapor deposition (PVD) device, which can be applied to thin film deposition of Cu, Ta, Ti, Al, or the like.

The semiconductor processing device provided by the embodiments of the present disclosure employs the process chamber provided by any of the embodiments of the present disclosure, so that heating efficiency and heating uniformity can be improved and other in the chamber. Does not adversely affect the parts of.

The semiconductor processing device provided by the embodiments of the present disclosure employs the process chamber provided by any of the embodiments of the present disclosure, so that heating efficiency and heating uniformity can be improved and other in the chamber. Does not adversely affect the parts of.
The inventions described in the claims at the time of filing the application of the present application are described below.
[C1]
A process chamber, wherein the process chamber comprises a chamber body, a shutter disk garage communicating with the inside of the chamber body, and a shutter disk, and a base and a first ejector pin mechanism are provided in the chamber body. The process chamber is further equipped with a transfer mechanism equipped with a transfer arm and a temperature control device.
The transfer arm can move between the chamber body and the shutter disk garage to support the shutter disk.
The temperature control device is arranged in the transfer arm, and when the transfer arm is moved into the inside of the chamber body and is located at a position opposite to the workpiece to be processed, the first ejector pin. A process chamber configured to perform temperature control on the workpiece to be processed supported by a mechanism.
[C2]
When the transfer arm is moved into the inside of the chamber body and is located at the position opposite to the workpiece to be processed, one surface of the transfer arm and the workpiece to be processed face each other. There is a height difference between the surface and the temperature control device, and the temperature control device has the transfer arm opposite to the work piece to be processed in order to perform heat exchange with the work piece to be treated through radiation. The process chamber according to C1, which is exposed from the surface of the above.
[C3]
When the transfer arm is moved into the inside of the chamber body and is located at the position opposite to the work piece to be processed, the work piece to be processed has the work piece to be processed with the transfer arm. It is moved up or down by the first ejector pin mechanism to the contact position.
The process chamber according to C1, wherein the temperature control device controls the temperature of the workpiece to be processed through heat exchange.
[C4]
Further comprising a second ejector pin mechanism disposed in the shutter disk garage, the shutter between the second ejector pin mechanism and the transfer arm when the transfer arm is located in the shutter disk garage. The process chamber according to any one of C1 to 3, which is configured to move up or down to carry a disk.
[C5]
The orthographic contour of the transport arm on a horizontal plane is such that the transport arm does not collide with the first ejector pin mechanism when the transport arm is moved into the chamber body, and the transport arm is the shutter. The process chamber according to C4, which is set in a shape so as not to collide with the second ejector pin mechanism when moved into the disk garage.
[C6]
The process chamber according to C2, wherein the height difference ranges from 20 mm to 400 mm.
[C7]
The transport arm comprises a drive device, a vertically arranged rotary shaft, and a horizontal arm disposed at the upper end of the rotary shaft so that the drive device rotates about an axis of the rotary shaft. The rotary shaft is driven to move the horizontal arm between the chamber body and the shutter disc garage, the horizontal arm capable of supporting the shutter disc and the temperature. The process chamber according to any one of C1 to 3, wherein the control device is arranged on the horizontal arm.
[C8]
The temperature control device comprises a heating element and an electrical connection line connected to the heating element.
The heating element is placed in the horizontal arm and
The process chamber according to C7, wherein a passage is arranged in the rotating shaft to allow the electrical connection line to be drawn from the chamber body.
[C9]
A cooling passage for sending cooling water is arranged in the horizontal arm, a water inflow passage and a water outflow passage are arranged in the rotating shaft, and a first end of the water inflow passage and a first of the water outflow passages are arranged. The ends of the cooling passages are connected to the two ends of the cooling passage, respectively, and the second end of the water inflow passage and the second end of the water outflow passage are of the rotating shaft outside the chamber body. The process chamber according to C8, both located in one portion.
[C10]
The process chamber according to C1, wherein the process chamber is a deposition chamber.
[C11]
A semiconductor processing device comprising the process chamber according to any one of C1 to 10.

Claims (11)

A process chamber, wherein the process chamber comprises a chamber body, a shutter disk garage communicating with the inside of the chamber body, and a shutter disk, and a base and a first ejector pin mechanism are provided in the chamber body. The process chamber is further equipped with a transfer mechanism equipped with a transfer arm and a temperature control device.
The transfer arm can move between the chamber body and the shutter disk garage to support the shutter disk.
The temperature control device is arranged in the transfer arm, and when the transfer arm is moved into the inside of the chamber body and is located at a position opposite to the workpiece to be processed, the first ejector pin. A process chamber configured to perform temperature control on the workpiece to be processed supported by a mechanism. When the transfer arm is moved into the inside of the chamber body and is located at the position opposite to the workpiece to be processed, one surface of the transfer arm and the workpiece to be processed face each other. There is a height difference between the surface and the temperature control device, and the temperature control device has the transfer arm opposite to the work piece to be processed in order to perform heat exchange with the work piece to be treated through radiation. The process chamber according to claim 1, which is exposed from the surface of the above. When the transfer arm is moved into the inside of the chamber body and is located at the position opposite to the work piece to be processed, the work piece to be processed has the work piece to be processed with the transfer arm. It is moved up or down by the first ejector pin mechanism to the contact position.
The process chamber according to claim 1, wherein the temperature control device controls the temperature of the workpiece to be processed through heat exchange. A second ejector pin mechanism arranged in the shutter disk garage is further provided, and the shutter is provided between the second ejector pin mechanism and the transfer arm when the transfer arm is located in the shutter disk garage. The process chamber according to any one of claims 1 to 3, which is configured to move up or down to carry a disk. The orthographic contour of the transport arm on a horizontal plane is such that the transport arm does not collide with the first ejector pin mechanism when the transport arm is moved into the chamber body, and the transport arm is the shutter. The process chamber according to claim 4, which is set in a shape so as not to collide with the second ejector pin mechanism when moved into the disk garage. The process chamber according to claim 2, wherein the height difference ranges from 20 mm to 400 mm. The transport arm comprises a drive device, a vertically arranged rotary shaft, and a horizontal arm disposed at the upper end of the rotary shaft so that the drive device rotates about an axis of the rotary shaft. The rotary shaft is driven to move the horizontal arm between the chamber body and the shutter disc garage, the horizontal arm capable of supporting the shutter disc and the temperature. The process chamber according to any one of claims 1 to 3, wherein the control device is arranged on the horizontal arm. The temperature control device comprises a heating element and an electrical connection line connected to the heating element.
The heating element is placed in the horizontal arm and
7. The process chamber of claim 7, wherein a passage is arranged in the rotating shaft to allow the electrical connection line to be drawn from the chamber body. A cooling passage for sending cooling water is arranged in the horizontal arm, a water inflow passage and a water outflow passage are arranged in the rotating shaft, and a first end of the water inflow passage and a first of the water outflow passages are arranged. The ends of the cooling passages are connected to the two ends of the cooling passage, respectively, and the second end of the water inflow passage and the second end of the water outflow passage are of the rotating shaft outside the chamber body. The process chamber of claim 8, both located in one portion. The process chamber according to claim 1, wherein the process chamber is a deposition chamber. A semiconductor processing device comprising the process chamber according to any one of claims 1 to 10.

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