CN111986976A - Process chamber and semiconductor processing equipment - Google Patents
Process chamber and semiconductor processing equipment Download PDFInfo
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- CN111986976A CN111986976A CN201910430077.5A CN201910430077A CN111986976A CN 111986976 A CN111986976 A CN 111986976A CN 201910430077 A CN201910430077 A CN 201910430077A CN 111986976 A CN111986976 A CN 111986976A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3497—Temperature of target
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
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- Condensed Matter Physics & Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention provides a process chamber and semiconductor processing equipment, wherein the process chamber comprises a chamber main body, a shielding plate library and a shielding plate, wherein the shielding plate library and the shielding plate are communicated with the interior of the chamber main body; the device also comprises a transmission mechanism, wherein the transmission mechanism comprises a transmission arm and a temperature control device, the transmission arm can move between the chamber body and the shielding disc library and can support the shielding disc; the temperature control device is arranged on the transmission arm and used for controlling the temperature of the processed workpiece when the transmission arm moves to the inner part of the chamber main body and is positioned at the position corresponding to the processed workpiece carried by the first thimble mechanism. The process chamber provided by the invention can improve the temperature control efficiency and the temperature control uniformity, and can not bring adverse effects to other parts in the chamber.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a process chamber and semiconductor processing equipment.
Background
In the process of performing a thin film deposition process by using a magnetron sputtering apparatus, in order to save wafer consumption, when a new target needs to be bombarded or a chamber needs to be preheated, a shielding plate is usually used to be shielded above a base, and when a normal process is performed, the shielding plate needs to be moved into a shielding plate library communicated with the chamber, specifically, a transmission arm is usually used to perform a rotation motion to realize the position conversion of the shielding plate between a chamber body and the shielding plate library.
In the existing copper filling process, in order to ensure that the copper material can be smoothly filled in the through hole structure, a thermal radiation source, which may be an infrared lamp tube, is usually added inside the chamber. During the process, firstly, a wafer is placed on a base to deposit a copper seed crystal layer; and then, the wafer is jacked to a position higher than the thermal radiation source from the base by using the thimble mechanism, and the back of the wafer is heated by the thermal radiation source until the temperature of the wafer is raised to reach the copper reflux temperature (generally higher than 350 ℃), so that the copper material can be ensured to be smoothly filled into the through hole structure under the temperature condition. Finally, the thimble mechanism is lowered to return the wafer to the susceptor for cryogenic cooling. And the process is repeated until the copper material is completely filled into the through hole structure.
However, in the prior art, since the thermal radiation source is usually disposed at a position at the periphery of the chamber and is far from the wafer, the heating efficiency of the wafer is low, the temperature rising rate is slow, and the heating uniformity is poor, thereby affecting the process uniformity and the productivity. Although the heating efficiency can be improved by increasing the power of the thermal radiation source, this has the following problems: it is easy to cause the temperature of the parts such as the chamber and the lining around the heat radiation source to be too high, which not only affects the service life of the parts, but also needs to add special water cooling design, and increases the equipment cost and the structural complexity.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides a process chamber and semiconductor processing equipment, which can improve the temperature control efficiency and the temperature control uniformity and can not bring adverse effects to other parts in the process chamber.
In order to achieve the above object, the present invention provides a process chamber, comprising a chamber body, a shielding tray library and a shielding tray, wherein the shielding tray library and the shielding tray are communicated with the interior of the chamber body, and a base and a first ejector pin mechanism are arranged in the chamber body; also comprises a transmission mechanism, the transmission mechanism comprises a transmission arm and a temperature control device, wherein,
the transfer arm is movable between the chamber body and the shutter disk magazine and is capable of supporting the shutter disk;
the temperature control device is arranged on the transmission arm, the transmission arm moves to the inner part of the cavity body, and the temperature control device is used for controlling the temperature of the processed workpiece when being positioned at a position opposite to the processed workpiece borne by the first thimble mechanism.
Optionally, when the transfer arm moves to the inside of the chamber body and is located at a position opposite to the workpiece to be processed, a height difference is formed between the surface of the transfer arm opposite to the workpiece to be processed and the workpiece to be processed; the temperature control device is exposed on the surface of the transmission arm opposite to the processed workpiece so as to exchange heat with the processed workpiece in a radiation mode.
Optionally, when the transfer arm moves into the chamber body and is located at a position opposite to the workpiece to be processed, the workpiece to be processed moves to a position contacting with the transfer arm by the ascending or descending of the first ejector pin mechanism;
the temperature control device controls the temperature of the processed workpiece in a heat exchange mode.
Optionally, the process chamber further includes a second ejector pin mechanism disposed in the shielding magazine, and the second ejector pin mechanism is configured to lift and lower the shielding tray when the transfer arm is located in the shielding magazine to transfer the shielding tray between the second ejector pin mechanism and the transfer arm.
Optionally, the outline shape of the orthographic projection of the transmission arm on the horizontal plane is set as: when the transmission arm moves into the cavity body, the first ejector pin mechanism is not collided; when the transmission arm moves to the shielding warehouse, the second ejector pin mechanism is not collided.
Optionally, the height difference is 20-400 mm.
Optionally, the transmission arm comprises a driving device, a vertically arranged rotating shaft and a horizontal arm arranged at the upper end of the rotating shaft; the driving device is used for driving the rotating shaft to rotate around the axis of the rotating shaft so as to drive the horizontal arm to move between the chamber body and the shielding disc warehouse; the horizontal arm can support the shielding plate, and the temperature control device is arranged on the horizontal arm.
Optionally, the temperature control device comprises a heating element and an electrical connection line connected thereto, wherein,
the heating element is arranged on the horizontal arm;
a passage is provided in the rotating shaft through which the electrical connection line can exit the chamber body.
Optionally, be provided with the cooling channel who is used for carrying the cooling water in the horizontal arm, just be provided with inlet channel and outlet channel in the rotation axis, inlet channel and the respective first end of outlet channel respectively with cooling channel's both ends are connected, inlet channel and the respective second end of outlet channel all are located the rotation axis be located the outside part of chamber main part.
Optionally, the process chamber is a deposition chamber.
As another technical solution, the present invention further provides a semiconductor processing apparatus including the process chamber provided by the present invention.
The invention has the beneficial effects that:
according to the process chamber provided by the invention, the temperature control device is arranged on the transmission arm, and when the transmission arm is positioned in the chamber main body and is positioned at a position opposite to the processed workpiece carried by the first ejector pin mechanism, the temperature control device controls the temperature of the processed workpiece, so that compared with the prior art, the temperature control distance between the temperature control device and the processed workpiece can be reduced, the temperature change rate is improved, the temperature control efficiency is further improved, and the productivity is improved; meanwhile, the temperature control uniformity can be improved, and the process uniformity is further improved. In addition, the temperature control device is arranged on the transmission arm, and the temperature control device is far away from parts (such as a cavity, a lining and the like) on the periphery of the cavity, so that the overhigh temperature of the parts can be avoided, and the parts cannot be adversely affected.
According to the semiconductor processing equipment provided by the invention, the temperature control efficiency and the temperature control uniformity can be improved by adopting the process chamber provided by the invention, and no adverse effect is brought to other parts in the process chamber.
Drawings
FIG. 1A is a cross-sectional view of a process chamber in one state according to a first embodiment of the present invention;
FIG. 1B is a cross-sectional view of a process chamber in another state according to a first embodiment of the present invention;
FIG. 2A is a top cross-sectional view of a transfer arm according to a first embodiment of the present invention;
FIG. 2B is a top view of the conveying arm of the first embodiment of the present invention when carrying the shielding tray;
FIG. 3 is another top cross-sectional view of a transfer arm used in the first embodiment of the present invention;
FIG. 4A is a cross-sectional view of a process chamber provided in accordance with a second embodiment of the present invention;
FIG. 4B is another cross-sectional view of a process chamber provided in accordance with a second embodiment of the present invention;
FIG. 5 is a cross-sectional view of a process chamber provided in a third embodiment of the invention.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the following describes the process chamber and the semiconductor processing apparatus provided by the present invention in detail with reference to the accompanying drawings.
First embodiment
Referring to fig. 1A and fig. 1B together, the process chamber provided in the present embodiment may be applied to a deposition chamber, and specifically includes a chamber body 1, a shielding tray library 2 communicated with the inside of the chamber body 1, a shielding tray 10, and a transmission mechanism, wherein a base 3 and a first ejector mechanism 4 are disposed in the chamber body 1; the base 3 is used for bearing a processed workpiece 5 when a thin film deposition process is carried out; the first ejector pin mechanism 4 is lifted to transfer the workpiece 5 to be processed to the base 3. Specifically, the first thimble mechanism 4 includes at least three thimbles arranged around the axis of the base 3 at intervals and a lifting mechanism connected therewith, and under the driving of the lifting mechanism, the at least three thimbles can be synchronously lifted to a highest position where the top end is higher than the base 3 or a lowest position where the top end is lower than the base 3. In the process that the ejector pin rises to the highest position, the ejector pin can jack up the processed workpiece 5 on the base 3; during the lowering of the thimble to the lowest position, the workpiece 5 to be machined can be carried on the base 3.
The transfer mechanism comprises a transfer arm 6 and a temperature control device 8, wherein the transfer arm 6 is movable between the chamber body 1 and the shutter disk magazine 2. In the present embodiment, referring to fig. 2A, the transferring arm 6 includes a driving device 7, a vertically disposed rotating shaft 61, and a horizontal arm 62 disposed at an upper end of the rotating shaft 61; wherein, the driving device 7 is connected with the rotating shaft 61 and is used for driving the rotating shaft 61 to rotate along the axis thereof, and the driving device 7 can be a motor, an air cylinder or a hydraulic cylinder which can provide rotating power. Alternatively, the driving means 7 is disposed outside the chamber, and the lower end of the rotating shaft 61 extends from the bottom of the chamber body 1 to the outside of the chamber body 1 and is connected to the driving means 7. Under the driving of the driving device 7, the rotating shaft 61 drives the horizontal arm 62 to rotate around the rotating shaft 61 into the chamber body 1 or the shielding tray 10.
In the present embodiment, the process chamber further includes a second ejector mechanism 9 disposed in the shielding magazine 2, and the second ejector mechanism 9 is configured to lift and lower the shielding tray 10 when the transferring arm 6 is located in the shielding magazine 2, so as to transfer the shielding tray 10 between the second ejector mechanism 9 and the transferring arm 6. The second thimble mechanism 9 has a structure similar to that of the first thimble mechanism 4, and includes at least three thimbles and a lifting mechanism connected thereto.
As shown in fig. 2B, the transfer arm 6 can support the shield disk 10 and transfer the shield disk 10 into the chamber body 1 or the shield disk magazine 2 by rotating. When the transfer arm 6 carries the shielding tray 10 and rotates into the shielding tray magazine 2, the second ejector mechanism 9 can lift the shielding tray 10 from the transfer arm 6 by lifting up, and lift the shielding tray 10 to a position C1 as shown in fig. 1B, where the shielding tray 10 is separated from the transfer arm 6, so that the transfer arm 6 can rotate into the chamber body 1 without carrying the shielding tray 10.
Of course, in practical applications, the second ejector mechanism 9 may not be provided, and the transfer arm 6 may be rotated into the chamber body 1 without carrying the shielding plate 10. For example, the shutter disk 10 is removed by opening the cavity.
When the transfer arm 6 moves to the inside of the chamber body 1 and is located at a position opposite to the workpiece 5 to be processed carried by the first ejector pin mechanism 4, a height difference exists between the surface of the transfer arm 6 opposite to the workpiece 5 to be processed and the workpiece 5 to be processed, and certainly, further temperature control can be achieved by further regulating and controlling the height difference; the temperature control device 8 is exposed to the surface of the transfer arm 6 opposite the workpiece 5 to be processed to be able to exchange heat with the workpiece 5 to be processed by means of radiation.
In the present embodiment, when the transfer arm 6 is moved to the inside of the chamber body 1, the transfer arm 6 is located below the workpiece 5 to be processed, and the temperature control device 8 is exposed to the upper surface of the transfer arm 6 so as to radiate heat toward the workpiece 5 to be processed. The temperature control device 8 comprises a heating element 81 and an electrical connection 82 connected thereto, wherein the heating element 81 is a heating element such as an infrared lamp or a heating wire capable of radiating heat toward the workpiece 5 to be processed. As shown in fig. 2A, the heating elements 81 are preferably helical and more evenly distributed on the upper surface of the horizontal arm 62 to improve heating uniformity.
In the present embodiment, the shape of the profile 621 of the orthographic projection of the transfer arm 6 on the horizontal plane is set as: when the transfer arm 6 moves into the chamber body 1, the first ejector pin mechanism 4 is not collided; when the transmission arm 6 moves into the shielding magazine 2, the second ejector pin mechanism 9 is not collided. A profile 621 is shown in FIG. 2A, and the profile 621 is shaped to ensure that the horizontal arm 62 can move into the inside of three pins from the gap between two adjacent pins without colliding with each pin. When the horizontal arm 62 moves into the shield disk magazine 2, the three pins of the second pin mechanism 9 are located outside the contour of the horizontal arm 62, so that the shield disk 10 can be lifted from the horizontal arm 62. Of course, in practical applications, the transmission arm 6 may also adopt any other contour shape as long as it does not collide with the thimble of the second thimble mechanism 9.
It should be noted that the present invention is not limited to the manner of designing the profile of the transmission arm 6 to ensure that the transmission arm does not collide with the thimble, for example, a channel for the thimble to pass through may be provided in the transmission arm 6, and during the process of rotating the transmission arm 6 to shield the magazine 2, each thimble can enter the channel from the opening of the channel without colliding with the transmission arm; each of the pins is able to move out of the channel from its opening during rotation of the transfer arm 6 into the chamber body 1.
When the process chamber provided by the embodiment is used for carrying out the copper filling process, firstly, a workpiece (wafer) to be processed is placed on the base 3 for carrying out the deposition of a copper seed crystal layer; then, as shown in fig. 1B, the first ejector pin mechanism 4 is used to lift the wafer from the susceptor 3 to the highest position a1, and the second ejector pin mechanism 9 is used to lift the shielding tray 10 from the transfer arm 6; then, as shown in fig. 1A, the transferring arm 6 is driven by the driving device 7 to rotate to the chamber body 1 and to be located at a position B1 below the wafer, at this time, the temperature control device 8 can be used to heat the back side of the wafer until the wafer is heated to reach the copper reflow temperature (generally greater than 350 ℃), and under this temperature condition, the copper material can be ensured to be smoothly filled into the through hole structure. After the heating is completed, the transfer arm 6 is rotated into the shield magazine 2 by the driving device 7, and lowers the first ejector pin mechanism 4 to the lowermost position to return the wafer onto the susceptor 3 for the low-temperature cooling. And the process is repeated until the copper material is completely filled into the through hole structure.
When a new target material in the process chamber needs to be bombarded or the chamber needs to be preheated, the second ejector pin mechanism 9 is lowered to place the shielding plate 10 on the transmission arm 6, and then, the transmission arm 6 is driven by the driving device 7 to rotate the shielding plate 10 carried by the transmission arm 6 to the chamber main body 1 and is located above the base 3, so as to play a role in shielding the base 3.
Optionally, the height difference H between the surface of the transfer arm 6 opposite to the workpiece 5 to be processed and the workpiece 5 to be processed ranges from 20 mm to 400 mm. Within this range, the heating efficiency can be ensured, and the heating power of the temperature control device 8 can be ensured not to be too high, so that the parts around the temperature control device 8 can be prevented from being adversely affected. Optionally, the power output by the temperature control device 8 is greater than or equal to 500W.
In this embodiment, it is preferable that a passage through which the electrical connection line 82 of the temperature control device 8 is led out of the chamber body 1 is provided in the rotating shaft 61, so that the electrical connection line 82 can be prevented from being exposed in the chamber body 1.
In this embodiment, as shown in fig. 3, a cooling channel 622 for conveying cooling water is preferably disposed in the horizontal arm 62, and the cooling channel 622 may be disposed below the temperature control device 8 to cool the conveying arm 6. Furthermore, a water inlet channel 623 and a water outlet channel 624 are arranged in the rotating shaft 61, the first ends of the water inlet channel 623 and the water outlet channel 624 are respectively connected with the two ends of the cooling channel 622, and the second ends of the water inlet channel 623 and the water outlet channel 624 are respectively positioned at the part of the rotating shaft 61 positioned outside the chamber body 1, i.e., the cooling channel is led out of the chamber body 1 by the rotating shaft 61, so that the cooling pipeline can be prevented from being exposed in the chamber body 1.
Compared with the prior art, the process chamber provided by the embodiment of the invention can reduce the temperature control distance between the temperature control device 8 and the processed workpiece 5, and improve the temperature control speed, thereby improving the temperature control efficiency and the productivity; meanwhile, the temperature control uniformity can be improved, so that the process uniformity can be improved. In addition, the temperature control device 8 is arranged on the transmission arm 6 and is far away from the parts (such as a cavity, a lining and the like) at the periphery of the cavity, so that the overhigh temperature of the parts can be avoided, and the parts cannot be adversely affected.
Second embodiment
Referring to fig. 4A, the present embodiment provides a process chamber, which includes a chamber body 1, a shield disk magazine 2, a shield disk 10 and a transfer mechanism, as compared to the first embodiment. Since the structures and functions of these components are the same as those of the first embodiment, they will not be described again, and only the differences between this embodiment and the first embodiment will be described in detail below.
Specifically, the transfer arm 6 is located above the workpiece to be processed carried by the first ejector mechanism 4 when inside the chamber body 1. As shown in FIG. 4A, the uppermost position A2 of the first ejector pin mechanism 4 is lower than the position B2 of the transfer arm 6 inside the chamber body 1. The temperature control device 8 is exposed to the lower surface of the transfer arm 6, and can exchange heat with the workpiece 5 to be processed by radiation. Thereby, the temperature control of the workpiece 5 to be processed can be realized.
Optionally, the height difference H between the surface of the transfer arm 6 opposite to the workpiece 5 to be processed and the workpiece 5 to be processed ranges from 20 mm to 400 mm.
In this embodiment, the process chamber further comprises a second ejector mechanism 9 disposed in the shield magazine 2 for enabling the transfer arm 6 to rotate into the chamber body 1 alone without carrying the shield disk 10. However, since the temperature control device 8 is exposed on the lower surface of the transfer arm 6, the second ejector mechanism 9 may not be provided, and as shown in fig. 4B, the transfer arm 6 may rotate into the chamber body 1 with the shielding plate 10, and the temperature control device 8 may radiate heat toward the front surface of the workpiece 5 to be processed while carrying the shielding plate 10.
Other structures and functions of the process chamber provided in this embodiment are the same as those of the first embodiment, and are not described herein again because they have been described in detail in the first embodiment.
Third embodiment
Referring to fig. 5, the present embodiment provides a process chamber, which includes a chamber body 1, a shield disk magazine 2, a shield disk 10 and a transfer mechanism, compared to the first and second embodiments. Since the structures and functions of these components are the same as those of the first and second embodiments, detailed description is omitted here, and only the differences between this embodiment and the first and second embodiments will be described in detail below.
Specifically, when the transfer arm 6 is moved to the inside of the chamber body 1 and is located at a position opposite to the workpiece 5 to be processed carried by the first ejector pin mechanism 4, the workpiece 5 to be processed can be moved to a position in contact with the transfer arm 6 by the raising or lowering of the first ejector pin mechanism 4; and the temperature control device 8' controls the temperature of the processed workpiece 5 in a heat exchange mode. The temperature control means 8' comprise heating elements such as heating wires or heating electrodes.
In practical applications, the temperature control device 8' may directly contact the workpiece 5 to be processed, or may not contact the workpiece 5 to be processed, but indirectly heat the workpiece 5 to be processed through the heating transfer arm 6.
In the present embodiment, the transfer arm 6 is located below the workpiece 5 to be processed, which is carried by the first ejector pin mechanism 4, when the transfer arm 6 is located inside the chamber body 1, but the present invention is not limited to this, and in practical applications, the transfer arm 6 may be located above the workpiece 5 to be processed when the transfer arm 6 is located inside the chamber body 1, and then the workpiece 5 to be processed may be brought into contact with the transfer arm 6 by being lifted up by the first ejector pin mechanism 4.
As another technical solution, an embodiment of the present invention further provides a semiconductor processing apparatus, which includes the process chamber provided in each of the embodiments of the present invention.
The semiconductor processing equipment can be magnetron sputtering equipment or other PVD equipment, and can be applied to deposition of Cu, Ta, Ti, Al or other films.
According to the semiconductor processing equipment provided by the embodiment of the invention, the process chamber provided by each embodiment of the invention can be adopted, so that the heating efficiency and the heating uniformity can be improved, and other parts in the chamber cannot be adversely affected.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (11)
1. A process chamber comprises a chamber body, a shielding plate warehouse and a shielding plate, wherein the shielding plate warehouse is communicated with the interior of the chamber body; it is characterized by also comprising a transmission mechanism, wherein the transmission mechanism comprises a transmission arm and a temperature control device,
the transfer arm is movable between the chamber body and the shutter disk magazine and is capable of supporting the shutter disk;
The temperature control device is arranged on the transmission arm, the transmission arm moves to the inner part of the cavity body, and the temperature control device is used for controlling the temperature of the processed workpiece when being positioned at a position opposite to the processed workpiece borne by the first thimble mechanism.
2. The process chamber of claim 1, wherein a surface of the transfer arm opposite the workpiece being processed has a height difference with the workpiece being processed when the transfer arm is moved into the chamber body interior and is positioned opposite the workpiece being processed; the temperature control device is exposed on the surface of the transmission arm opposite to the processed workpiece so as to exchange heat with the processed workpiece in a radiation mode.
3. The process chamber of claim 1, wherein the workpiece being processed is moved into contact with the transfer arm by raising or lowering the first lift pin mechanism while the transfer arm is moved into the interior of the chamber body and is positioned opposite the workpiece being processed;
the temperature control device controls the temperature of the processed workpiece in a heat exchange mode.
4. The process chamber of any of claims 1-3, further comprising a second lift pin mechanism disposed in the shield magazine, the second lift pin mechanism configured to lift and lower the shield tray to transfer between the second lift pin mechanism and the transfer arm when the transfer arm is in the shield magazine.
5. The process chamber of claim 4, wherein an orthographic profile shape of the transfer arm in a horizontal plane is configured to: when the transmission arm moves into the cavity body, the first ejector pin mechanism is not collided; when the transmission arm moves to the shielding warehouse, the second ejector pin mechanism is not collided.
6. The process chamber of claim 2, wherein the height difference ranges from 20 mm to 400 mm.
7. The process chamber of any of claims 1-3, wherein the transfer arm comprises a drive device, a vertically disposed rotating shaft, and a horizontal arm disposed at an upper end of the rotating shaft; the driving device is used for driving the rotating shaft to rotate around the axis of the rotating shaft so as to drive the horizontal arm to move between the chamber body and the shielding disc warehouse; the horizontal arm can support the shielding plate, and the temperature control device is arranged on the horizontal arm.
8. The process chamber of claim 7, wherein the temperature control device comprises a heating element and electrical connections thereto, wherein,
the heating element is arranged on the horizontal arm;
a passage is provided in the rotating shaft through which the electrical connection line can exit the chamber body.
9. The process chamber of claim 8, wherein a cooling channel is disposed in the horizontal arm for delivering cooling water, and a water inlet channel and a water outlet channel are disposed in the rotating shaft, wherein first ends of the water inlet channel and the water outlet channel are respectively connected to two ends of the cooling channel, and second ends of the water inlet channel and the water outlet channel are both located on a portion of the rotating shaft located outside the chamber body.
10. The process chamber of claim 1, wherein the process chamber is a deposition chamber.
11. A semiconductor processing apparatus comprising the process chamber of any of claims 1-10.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910430077.5A CN111986976B (en) | 2019-05-22 | 2019-05-22 | Process chamber and semiconductor processing equipment |
| SG11202112225QA SG11202112225QA (en) | 2019-05-22 | 2020-04-24 | Process chamber and semiconductor processing device |
| PCT/CN2020/086719 WO2020233346A1 (en) | 2019-05-22 | 2020-04-24 | Process chamber and semiconductor processing device |
| KR1020217036271A KR102498550B1 (en) | 2019-05-22 | 2020-04-24 | Process chambers and semiconductor processing devices |
| JP2021568389A JP7153812B2 (en) | 2019-05-22 | 2020-04-24 | Process chambers and semiconductor processing devices |
| TW109115251A TWI745959B (en) | 2019-05-22 | 2020-05-07 | Process chamber and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910430077.5A CN111986976B (en) | 2019-05-22 | 2019-05-22 | Process chamber and semiconductor processing equipment |
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| Publication Number | Publication Date |
|---|---|
| CN111986976A true CN111986976A (en) | 2020-11-24 |
| CN111986976B CN111986976B (en) | 2022-04-22 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201910430077.5A Active CN111986976B (en) | 2019-05-22 | 2019-05-22 | Process chamber and semiconductor processing equipment |
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|---|---|
| JP (1) | JP7153812B2 (en) |
| KR (1) | KR102498550B1 (en) |
| CN (1) | CN111986976B (en) |
| SG (1) | SG11202112225QA (en) |
| TW (1) | TWI745959B (en) |
| WO (1) | WO2020233346A1 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112795893A (en) * | 2020-12-17 | 2021-05-14 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and process chamber thereof |
| CN113451188A (en) * | 2021-06-25 | 2021-09-28 | 北京北方华创微电子装备有限公司 | Reaction chamber, semiconductor processing equipment and semiconductor processing method |
| CN114975178A (en) * | 2022-05-18 | 2022-08-30 | 江苏微导纳米科技股份有限公司 | Temperature control assembly, semiconductor processing chamber and semiconductor processing equipment |
| CN115074692A (en) * | 2022-06-24 | 2022-09-20 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and process chamber thereof |
| WO2023051496A1 (en) * | 2021-09-30 | 2023-04-06 | 北京北方华创微电子装备有限公司 | Semiconductor processing device and wafer processing method |
| CN116695086A (en) * | 2023-06-30 | 2023-09-05 | 北京北方华创微电子装备有限公司 | Process chamber, semiconductor process equipment and thin film deposition method |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113437012B (en) * | 2021-06-23 | 2024-06-21 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber and semiconductor process equipment |
| CN114509982B (en) * | 2022-02-24 | 2023-04-21 | 江西鑫铂瑞科技有限公司 | Data acquisition method of copper material processing device master control desk |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4858556A (en) * | 1986-09-15 | 1989-08-22 | Siebert Jerome F | Method and apparatus for physical vapor deposition of thin films |
| US20040089536A1 (en) * | 2002-02-20 | 2004-05-13 | Applied Materials, Inc. | Method for detecting the position of a shutter disk in a physical vapor deposition chamber |
| JP2006022355A (en) * | 2004-07-06 | 2006-01-26 | Shincron:Kk | Film deposition apparatus having heating means on correction plate |
| CN101978093A (en) * | 2008-11-28 | 2011-02-16 | 佳能安内华股份有限公司 | Deposition apparatus and electronic device manufacturing method |
| CN102560388A (en) * | 2010-12-09 | 2012-07-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetic control sputtering equipment |
| US20150114835A1 (en) * | 2013-10-31 | 2015-04-30 | Tokyo Electron Limited | Film forming apparatus |
| CN105470181A (en) * | 2014-09-10 | 2016-04-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Shielding disk transmission device and reaction cavity |
| CN105714245A (en) * | 2014-12-01 | 2016-06-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber |
| CN106350780A (en) * | 2015-07-16 | 2017-01-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction cavity and semiconductor machining equipment |
| CN106571284A (en) * | 2015-10-09 | 2017-04-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Shielding disc system, reaction chamber and semiconductor processing device |
| CN107488832A (en) * | 2016-06-12 | 2017-12-19 | 北京北方华创微电子装备有限公司 | Depositing device and physical vapor deposition chamber |
| CN108766909A (en) * | 2018-05-24 | 2018-11-06 | 上海集成电路研发中心有限公司 | The device and method of dew condensation phenomenon in a kind of improvement cryogenic implantation |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08264618A (en) * | 1995-03-27 | 1996-10-11 | Toshiba Corp | Semiconductor manufacturing device and method of manufacturing semiconductor device |
| JP3005179B2 (en) * | 1995-08-21 | 2000-01-31 | アプライド マテリアルズ インコーポレイテッド | Shutter device for sputtering equipment |
| JP2002009129A (en) * | 2000-06-26 | 2002-01-11 | Matsushita Electric Ind Co Ltd | Substrate conveying arm and substrate conveying method |
| JP4902052B2 (en) * | 2001-04-05 | 2012-03-21 | キヤノンアネルバ株式会社 | Sputtering equipment |
| JP4140763B2 (en) * | 2002-12-11 | 2008-08-27 | キヤノンアネルバ株式会社 | Plasma processing apparatus and plasma processing method |
| TWI356100B (en) * | 2003-07-24 | 2012-01-11 | Applied Materials Inc | Shutter disk and blade for physical vapor depositi |
| JP4343151B2 (en) * | 2004-08-11 | 2009-10-14 | 東京エレクトロン株式会社 | Method for measuring temperature of heating plate, substrate processing apparatus, and computer program for measuring temperature of heating plate |
| JP2010275574A (en) * | 2009-05-27 | 2010-12-09 | Panasonic Corp | Sputtering apparatus and method for manufacturing semiconductor device |
| US10892180B2 (en) * | 2014-06-02 | 2021-01-12 | Applied Materials, Inc. | Lift pin assembly |
| JP2017183384A (en) * | 2016-03-29 | 2017-10-05 | 株式会社ニューフレアテクノロジー | Transport device and semiconductor manufacturing apparatus |
| JP6667576B2 (en) * | 2017-08-30 | 2020-03-18 | 東京エレクトロン株式会社 | Transfer apparatus, substrate processing apparatus and transfer method |
-
2019
- 2019-05-22 CN CN201910430077.5A patent/CN111986976B/en active Active
-
2020
- 2020-04-24 JP JP2021568389A patent/JP7153812B2/en active Active
- 2020-04-24 KR KR1020217036271A patent/KR102498550B1/en active IP Right Grant
- 2020-04-24 WO PCT/CN2020/086719 patent/WO2020233346A1/en active Application Filing
- 2020-04-24 SG SG11202112225QA patent/SG11202112225QA/en unknown
- 2020-05-07 TW TW109115251A patent/TWI745959B/en active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4858556A (en) * | 1986-09-15 | 1989-08-22 | Siebert Jerome F | Method and apparatus for physical vapor deposition of thin films |
| US20040089536A1 (en) * | 2002-02-20 | 2004-05-13 | Applied Materials, Inc. | Method for detecting the position of a shutter disk in a physical vapor deposition chamber |
| JP2006022355A (en) * | 2004-07-06 | 2006-01-26 | Shincron:Kk | Film deposition apparatus having heating means on correction plate |
| CN101978093A (en) * | 2008-11-28 | 2011-02-16 | 佳能安内华股份有限公司 | Deposition apparatus and electronic device manufacturing method |
| CN102560388A (en) * | 2010-12-09 | 2012-07-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetic control sputtering equipment |
| US20150114835A1 (en) * | 2013-10-31 | 2015-04-30 | Tokyo Electron Limited | Film forming apparatus |
| CN105470181A (en) * | 2014-09-10 | 2016-04-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Shielding disk transmission device and reaction cavity |
| CN105714245A (en) * | 2014-12-01 | 2016-06-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber |
| CN106350780A (en) * | 2015-07-16 | 2017-01-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction cavity and semiconductor machining equipment |
| CN106571284A (en) * | 2015-10-09 | 2017-04-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Shielding disc system, reaction chamber and semiconductor processing device |
| CN107488832A (en) * | 2016-06-12 | 2017-12-19 | 北京北方华创微电子装备有限公司 | Depositing device and physical vapor deposition chamber |
| CN108766909A (en) * | 2018-05-24 | 2018-11-06 | 上海集成电路研发中心有限公司 | The device and method of dew condensation phenomenon in a kind of improvement cryogenic implantation |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112795893A (en) * | 2020-12-17 | 2021-05-14 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and process chamber thereof |
| CN113451188A (en) * | 2021-06-25 | 2021-09-28 | 北京北方华创微电子装备有限公司 | Reaction chamber, semiconductor processing equipment and semiconductor processing method |
| WO2023051496A1 (en) * | 2021-09-30 | 2023-04-06 | 北京北方华创微电子装备有限公司 | Semiconductor processing device and wafer processing method |
| CN114975178A (en) * | 2022-05-18 | 2022-08-30 | 江苏微导纳米科技股份有限公司 | Temperature control assembly, semiconductor processing chamber and semiconductor processing equipment |
| CN114975178B (en) * | 2022-05-18 | 2024-04-05 | 江苏微导纳米科技股份有限公司 | Temperature control assembly, semiconductor processing chamber and semiconductor processing equipment |
| CN115074692A (en) * | 2022-06-24 | 2022-09-20 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and process chamber thereof |
| CN115074692B (en) * | 2022-06-24 | 2023-10-13 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and process chamber thereof |
| CN116695086A (en) * | 2023-06-30 | 2023-09-05 | 北京北方华创微电子装备有限公司 | Process chamber, semiconductor process equipment and thin film deposition method |
| CN116695086B (en) * | 2023-06-30 | 2024-04-16 | 北京北方华创微电子装备有限公司 | Process chamber, semiconductor process equipment and thin film deposition method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2022529385A (en) | 2022-06-21 |
| CN111986976B (en) | 2022-04-22 |
| WO2020233346A1 (en) | 2020-11-26 |
| JP7153812B2 (en) | 2022-10-14 |
| TW202044476A (en) | 2020-12-01 |
| KR20210147059A (en) | 2021-12-06 |
| SG11202112225QA (en) | 2021-12-30 |
| KR102498550B1 (en) | 2023-02-10 |
| TWI745959B (en) | 2021-11-11 |
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