CN108766909B - Device and method for improving dew phenomenon in low-temperature ion implantation - Google Patents
Device and method for improving dew phenomenon in low-temperature ion implantation Download PDFInfo
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- CN108766909B CN108766909B CN201810507749.3A CN201810507749A CN108766909B CN 108766909 B CN108766909 B CN 108766909B CN 201810507749 A CN201810507749 A CN 201810507749A CN 108766909 B CN108766909 B CN 108766909B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67248—Temperature monitoring
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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Abstract
The invention discloses a device for improving the dew phenomenon in low-temperature ion implantation, which comprises: the wafer conveying manipulator is arranged in the ion implanter, and a heating module is arranged on the wafer conveying manipulator and used for heating the semiconductor substrate in the process of conveying the semiconductor substrate from a process cavity of the ion implanter to an external environment through the wafer conveying manipulator. The invention can directly heat the semiconductor substrate on the wafer conveying manipulator, thereby avoiding the condensation phenomenon, reducing the probability of wafer sticking and fragments and improving the quality of the injection process. The invention also discloses a method for improving the dew phenomenon in low-temperature ion implantation, which can save the process of conveying the semiconductor substrate to a heating cavity for heating in the past, save time, improve production efficiency and further reduce process cost.
Description
Technical Field
The present invention relates to the field of integrated circuit manufacturing technology, and more particularly, to an apparatus and method for improving the phenomenon of dew formation in low temperature ion implantation.
Background
With the continuous development of semiconductor technology, ion implantation technology plays an increasingly important role in integrated circuit manufacturing. Maintaining a lower substrate temperature during the ion implantation process is helpful for the formation of ultra shallow junctions, and also helps to improve the yield of ion implantation.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a conventional low-temperature ion implantation apparatus. As shown in fig. 1, at the beginning of low-temperature ion implantation, a silicon wafer is transferred from a load lock (load lock)10 of an ion implanter to a Pre-cooling chamber (Pre-cooling)30 of the implanter through a robot 201 located in a buffer chamber (buffer chamber)20, so that the temperature of the silicon wafer is reduced from ambient temperature (e.g. 20-25 ℃) to-15-30 ℃; the wafer is then transferred by robot 502 to a wafer support (plate)501 in the implantation chamber 50 and cooled to the desired process temperature for implantation (e.g., -60 to-150 c). Wherein the robot 502 and the stage 501 are located together within the implantation chamber 50. After the injection process is completed, the silicon wafer is conveyed to a heating chamber (arm chamber)40 through a manipulator 502, and then is heated, so that the temperature of the silicon wafer is recovered to the ambient temperature (for example, 20-25 ℃); finally, the wafer is transferred to the pre-chamber 10 of the implanter, thus ending the entire implantation process.
However, in the actual production, when the silicon wafer is conveyed from the wafer bearing table to the heating cavity through the mechanical handle, the silicon wafer is taken out from a place with the temperature of-60 to-150 ℃, and the condensation phenomenon is easy to occur, so that water drops exist on the mechanical arm, and the phenomenon of wafer sticking and even chipping is easy to occur when the silicon wafer is conveyed next time; moreover, residual water droplets on the robot are easily sublimated, which can reduce the vacuum of the implanter, which in turn affects the implantation process conditions.
On the other hand, after the silicon wafer is transferred to the heating chamber, the silicon wafer is heated for a period of time, which also reduces the injection efficiency and seriously affects the injection productivity.
Therefore, there is a need to find a means for improving the exposure phenomenon in low temperature ion implantation.
Disclosure of Invention
The present invention is directed to overcoming the above-mentioned drawbacks of the prior art and providing an apparatus and method for improving the phenomenon of junction and dew formation in low-temperature ion implantation.
In order to achieve the purpose, the technical scheme of the invention is as follows:
the invention provides a device for improving the dew phenomenon in low-temperature ion implantation, which comprises: the wafer conveying manipulator is arranged in the ion implanter, and a heating module is arranged on the wafer conveying manipulator and used for heating the semiconductor substrate in the process of conveying the semiconductor substrate from a process cavity of the ion implanter to an external environment through the wafer conveying manipulator.
Preferably, the heating module is provided with a microwave emitter for emitting microwaves towards the semiconductor substrate.
Preferably, the sheet conveying manipulator is provided with two mechanical claws in the shape of a double-stranded fishfork, and the plurality of microwave emitters are respectively arranged on the two mechanical claws.
Preferably, a plurality of the microwave emitters are arranged in pairs at the edges of the two gripper arms.
Preferably, the method further comprises the following steps: and the temperature detector is arranged on the sheet conveying manipulator and is connected with a temperature display.
The invention also provides a method for improving the condensation phenomenon in low-temperature ion implantation, which comprises the following steps:
step S01: the semiconductor substrate is transferred to a wafer bearing table in the process chamber of the ion implanter from the external environment through a wafer transferring manipulator, and the implantation process is completed after the temperature is reduced to the process temperature required by the implantation;
step S02: taking the semiconductor substrate out of the wafer bearing table through the wafer conveying mechanical arm, and opening a heating module arranged on the wafer conveying mechanical arm to heat the semiconductor substrate;
step S03: and stopping heating the semiconductor substrate when the temperature of the semiconductor substrate reaches the external environment temperature, and conveying the semiconductor substrate out of the ion implanter.
Preferably, the heating module is provided with a microwave emitter for emitting microwaves towards the semiconductor substrate.
Preferably, the wavelength of the microwave is 30nm to 60 nm.
Preferably, a temperature detector is arranged on the sheet conveying manipulator and connected with a temperature display.
According to the technical scheme, the heating module (the microwave emitter) is arranged on the wafer conveying manipulator, so that the semiconductor substrate can be directly heated on the wafer conveying manipulator, the problem of condensation phenomenon in the process of conveying the semiconductor substrate from a process cavity of the ion implanter to the external environment is avoided, the probability of wafer sticking and fragments is reduced, and the quality of the implantation process is improved; meanwhile, the method of the invention can save the process of conveying the semiconductor substrate to the heating cavity for heating in the past, save time, improve production efficiency and reduce process cost.
Drawings
Fig. 1 is a schematic structural diagram of a conventional low-temperature ion implantation apparatus;
FIG. 2 is a schematic structural diagram of an apparatus for improving the dewing phenomenon in the low-temperature ion implantation according to a preferred embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a wafer conveying robot according to a preferred embodiment of the present invention;
fig. 4 is a flow chart illustrating a method for improving the dewing phenomenon in the low-temperature ion implantation according to the present invention.
Detailed Description
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.
In the following detailed description of the embodiments of the present invention, in order to clearly illustrate the structure of the present invention and to facilitate explanation, the structure shown in the drawings is not drawn to a general scale and is partially enlarged, deformed and simplified, so that the present invention should not be construed as limited thereto.
In the following description of the present invention, please refer to fig. 2, fig. 2 is a schematic structural diagram of an apparatus for improving the dewing phenomenon in the low-temperature ion implantation according to a preferred embodiment of the present invention. As shown in fig. 2, an apparatus for improving the dew formation in low temperature ion implantation according to the present invention is disposed in an ion implanter; the device comprises: a wafer transfer robot 5002 (hereinafter, referred to as a first wafer transfer robot 5002) provided in the ion implanter; the first wafer transfer robot 5002 is provided with a heating module for heating the semiconductor substrate transferred by the first wafer transfer robot 5002.
As an alternative embodiment, the pre-chamber 1000, the buffer chamber 2000, the pre-cooling chamber 3000, and the process chamber 5000 may be provided in the ion implanter, and the original heating chamber in the ion implanter (see fig. 1) may be eliminated, instead of the transition chamber 4000. Wherein a first wafer transfer robot 5002 for heating the semiconductor substrate is disposed in the process chamber 5000.
Two additional sheet conveying robots 2001, 2002 (hereinafter, a second sheet conveying robot 2001 and a third sheet conveying robot 2002) may be provided in the buffer chamber 2000. The second wafer conveying manipulator 2001 is used for conveying the semiconductor substrate before the implantation process from the pre-chamber 1000 to the pre-cooling chamber 3000 through the buffer chamber 2000 for pre-cooling; the first wafer transfer robot 5002 is used for transferring the pre-cooled semiconductor substrate from the pre-cooling chamber 3000 to the process chamber 5000, transferring the semiconductor substrate onto the wafer stage 5001 in the process chamber 5000 for processing, and transferring the semiconductor substrate which is subjected to the implantation process and heated by the first wafer transfer robot 5002 to the transition chamber 4000; the third wafer transfer robot 2002 is configured to transfer the heated semiconductor substrate having an ambient temperature from the transition chamber 4000 to the pre-chamber 1000 via the buffer chamber 2000 until the semiconductor substrate is transferred out of the ion implanter.
A heating module is mounted on the first wafer transfer robot 5002 in order to directly heat the semiconductor substrate during the process of transferring the semiconductor substrate from the process chamber 5000 of the ion implanter to the external environment by the first wafer transfer robot 5002, thereby preventing the semiconductor substrate from dewing.
The semiconductor substrate is directly heated by the heating module on the first wafer conveying mechanical arm 5002, so that the probability of wafer sticking and fragments is reduced, and the quality of an injection process is improved; in addition, the process that the semiconductor substrate needs to be conveyed to the heating cavity for heating in the prior art can be omitted, the time is saved, the production efficiency is improved, and the process cost is reduced.
The heating module can be provided with a microwave emitter; the microwave emitters may be disposed on both sides of the first carousel robot 5002 and face in the direction of the semiconductor substrate. The semiconductor substrate can be directly heated by emitting microwaves through the microwave emitter.
Please refer to fig. 3. The first carousel robot 5002 may include a robot arm 200 and a robot gripper 100 located at a front end of the robot arm 200. Gripper 100 may take the shape of a double wishbone, i.e., first slice transfer robot 5002 has two wishbone-shaped grippers 100. A plurality of microwave transmitters 101 may be installed on both of the robot arms 100 and uniformly distributed on both of the robot arms 100.
In a preferred embodiment, the microwave emitters 101 may be arranged in pairs at the edge of two gripper arms 100 in a symmetrical manner.
The first wafer handler 5002 can be made of ceramic. The second sheet conveying robot 2001 and the third sheet conveying robot 2002 may also be made of ceramic materials.
The first wafer transfer robot 5002 may also be provided with a temperature probe 201, and the temperature probe 201 may be attached to a connecting portion between the robot arm 200 and the robot gripper 100, for example. The temperature of the semiconductor substrate can be detected by the temperature detector 201, so that the heating condition of the semiconductor substrate can be grasped at any time.
The temperature detector 201 may also be connected to a temperature display (not shown) which may be mounted on the exterior of the ion implanter or on a display window of the ion implanter. The temperature of the semiconductor substrate detected by the temperature detector 201 can be displayed in real time by the temperature display.
The semiconductor substrate may be a material such as a silicon wafer substrate.
Hereinafter, a method for improving the condensation phenomenon in the low temperature ion implantation according to the present invention will be described in detail with reference to the following embodiments and fig. 2 to 4.
Referring to fig. 4, fig. 4 is a flow chart illustrating a method for improving the dewing phenomenon in the low-temperature ion implantation according to the present invention. As shown in fig. 4, the method for improving the condensation phenomenon in the low-temperature ion implantation according to the present invention can be applied to an ion implanter using the above-mentioned device for improving the condensation phenomenon in the low-temperature ion implantation. The method may comprise the steps of:
step S01: and the semiconductor substrate is transferred to a wafer bearing table in the process chamber of the ion implanter from the external environment through the wafer transferring mechanical arm, and the implantation process is completed after the temperature is reduced to the process temperature required by implantation.
Please refer to fig. 3. First, the semiconductor substrate introduced into the front chamber 1000 from the external environment is transferred to the pre-cooling chamber 3000 of the implanter through the buffer chamber 2000 by using the second wafer transfer robot 2001 provided in the buffer chamber 2000, and pre-cooled in order to initially cool the semiconductor substrate from the external environment temperature of, for example, 20 to 25 ℃ to a pre-cooling temperature of, for example, -15 to-30 ℃.
The semiconductor substrate is then transferred to a stage 5001(plate) in a process chamber 5000(chamber) by a first wafer transfer robot 5002 and is further cooled to a process temperature required for implantation (e.g., -60 to-150 ℃).
And finally, completing the implantation process by adopting an ion implantation process commonly used in the industry.
Step S02: and taking the semiconductor substrate out of the wafer bearing table through the wafer conveying mechanical arm, and opening a heating module arranged on the wafer conveying mechanical arm to heat the semiconductor substrate.
Please refer to fig. 3 and 4. After the implantation process is completed, the semiconductor substrate is continuously taken out of the stage 5001 by the first wafer transfer robot 5002 and then transferred in the direction of the transition chamber 4000. At the same time, the heating module provided on the first wafer transfer robot 5002 is turned on, for example, the microwave emitter 101 provided on the heating module emits microwaves to the semiconductor substrate, and the semiconductor substrate is directly heated, so that the temperature of the semiconductor substrate leaving the wafer stage 5001 is heated from the low-temperature ion implantation process temperature in the process chamber 5000 to the ambient temperature outside the process chamber 5000, and the semiconductor substrate is prevented from dewing due to the temperature difference.
The wavelength of the microwave emitted by the microwave emitter 101 may be 30nm to 60 nm.
Step S03: and stopping heating the semiconductor substrate when the temperature of the semiconductor substrate reaches the external environment temperature, and conveying the semiconductor substrate out of the ion implanter.
Please refer to fig. 4 and fig. 3. The temperature of the semiconductor substrate can be detected by a temperature detector 201 mounted on the first wafer transfer robot 5002. And a temperature display may be used to display the temperature of the semiconductor substrate detected by the temperature detector 201 in real time.
Heating the semiconductor substrate until the temperature display displays that the temperature is the external environment temperature, and stopping heating. Then, the semiconductor substrate is transferred to the transition chamber 4000 by the first wafer transfer robot 5002, and then is taken out of the transition chamber 4000 by the third wafer transfer robot 2002, and is transferred to the pre-chamber 1000 through the buffer chamber 2000, and finally is transferred out of the ion implanter.
In conclusion, the heating module (microwave emitter) is arranged on the first wafer conveying manipulator, so that the semiconductor substrate can be directly heated on the first wafer conveying manipulator, the problem of condensation phenomenon in the process of conveying the semiconductor substrate from the process cavity of the ion implanter to the external environment is avoided, the probability of sticking and fragmenting is reduced, and the quality of the implantation process is improved; meanwhile, the method of the invention can save the process of conveying the semiconductor substrate to the heating cavity for heating in the past, save time, improve production efficiency and reduce process cost.
The above description is only a preferred embodiment of the present invention, and the embodiments are not intended to limit the scope of the present invention, so that all equivalent structural changes made by using the contents of the specification and the drawings of the present invention should be included in the scope of the present invention.
Claims (9)
1. An apparatus for improving the phenomenon of dew formation in low temperature ion implantation, comprising: the wafer conveying manipulator is provided with a heating module and used for heating a semiconductor substrate in the process of conveying the semiconductor substrate from a process cavity of the ion implanter to an external environment through the wafer conveying manipulator, a temperature detector arranged on the wafer conveying manipulator detects the temperature of the semiconductor substrate, and when the temperature detector detects that the temperature of the semiconductor substrate reaches the external environment temperature, the heating module stops heating the semiconductor substrate; the wafer conveying manipulator comprises a mechanical arm and a mechanical gripper, the temperature detector is arranged at the connecting part of the mechanical arm and the mechanical gripper, and the heating modules are arranged on two sides of the wafer conveying manipulator and face the semiconductor substrate.
2. The apparatus for improving the dewing phenomenon in low-temperature ion implantation according to claim 1, wherein the heating module is provided with a microwave emitter for emitting microwaves toward the semiconductor substrate.
3. The apparatus for improving the dewing phenomenon in the low-temperature ion implantation according to claim 2, wherein the sheet transferring robot has two robot jaws in a double-stranded fishfork shape, and the plurality of microwave emitters are respectively disposed on the two robot jaws.
4. The apparatus for improving the dewing phenomenon in low-temperature ion implantation according to claim 3, wherein the plurality of microwave launchers are arranged in pairs at the edges of the two gripper arms.
5. The apparatus for improving the dewing phenomenon in the low-temperature ion implantation according to any one of claims 1 to 4, wherein the temperature detector is connected with a temperature display.
6. A method for improving the condensation phenomenon in low-temperature ion implantation is characterized by comprising the following steps:
step S01: the semiconductor substrate is transferred to a wafer bearing table in a process cavity of an ion implanter from an external environment through a wafer transferring mechanical arm, the implantation process is completed after the temperature is reduced to the process temperature required by implantation, a temperature detector arranged on the wafer transferring mechanical arm detects the temperature of the semiconductor substrate, the wafer transferring mechanical arm comprises a mechanical arm and a mechanical paw, and the temperature detector is arranged at the connecting part of the mechanical arm and the mechanical paw;
step S02: taking the semiconductor substrate out of the wafer bearing table through the wafer conveying mechanical arm, and opening heating modules arranged on the wafer conveying mechanical arm to heat the semiconductor substrate, wherein the heating modules are arranged on two sides of the wafer conveying mechanical arm and face the semiconductor substrate;
step S03: and when the temperature detector detects that the temperature of the semiconductor substrate reaches the external environment temperature, the heating module stops heating the semiconductor substrate and conveys the semiconductor substrate out of the ion implanter.
7. The method for improving the dewing phenomenon in low-temperature ion implantation according to claim 6, wherein the heating module is provided with a microwave emitter for emitting microwaves toward the semiconductor substrate.
8. The method for improving the dewing phenomenon in low-temperature ion implantation according to claim 7, wherein the wavelength of the microwave is 30nm to 60 nm.
9. The method for improving the condensation phenomenon in the low-temperature ion implantation according to claim 6, wherein a temperature detector is arranged on the wafer conveying manipulator and is connected with a temperature display.
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| CN201810507749.3A CN108766909B (en) | 2018-05-24 | 2018-05-24 | Device and method for improving dew phenomenon in low-temperature ion implantation |
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| CN111986976B (en) * | 2019-05-22 | 2022-04-22 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor processing equipment |
| CN113984275B (en) * | 2021-12-24 | 2022-05-10 | 北京凯世通半导体有限公司 | Method for monitoring ultralow temperature ion implantation equipment by measuring vacuum degree |
| CN114496901A (en) * | 2022-04-15 | 2022-05-13 | 拓荆科技(北京)有限公司 | Manipulator applied to coating equipment |
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| CN104600015A (en) * | 2015-02-11 | 2015-05-06 | 北京中电科电子装备有限公司 | Chip conveying device |
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| JPH08264618A (en) * | 1995-03-27 | 1996-10-11 | Toshiba Corp | Semiconductor manufacturing device and method of manufacturing semiconductor device |
| JPH10107113A (en) * | 1996-09-27 | 1998-04-24 | Kokusai Electric Co Ltd | Substrate transfer device |
| CN1678482A (en) * | 2002-07-02 | 2005-10-05 | 巴特克有限责任公司 | Sensor unit device and method for avoiding condensation on a surface |
| CN102918621A (en) * | 2010-05-28 | 2013-02-06 | 艾克塞利斯科技公司 | Active dew point sensing and load lock venting to prevent condensation of workpieces |
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