TW201027665A - Substrate processing method and substrate processing apparatus - Google Patents

Substrate processing method and substrate processing apparatus Download PDF

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TW201027665A
TW201027665A TW098137260A TW98137260A TW201027665A TW 201027665 A TW201027665 A TW 201027665A TW 098137260 A TW098137260 A TW 098137260A TW 98137260 A TW98137260 A TW 98137260A TW 201027665 A TW201027665 A TW 201027665A
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substrate
pressure
adsorption surface
processing chamber
gas
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TW098137260A
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Chinese (zh)
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TWI467692B (en
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Kimio Kogure
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Shibaura Mechatronics Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A substrate processing method is provided with: a step wherein the inside of a processing chamber (12) is brought under second pressure which is higher than first pressure in substrate processing, in a state where a substrate (W) is spaced apart from an electrostatically attracting surface (23a); a step wherein the substrate (W) is attracted to the electrostatically attracting surface (23a) by moving the substrate (W) with respect to the electrostatically attracting surface (23a) under the second pressure, and a gas existing inside the processing chamber (12) under the second pressure is applied between the substrate (W) and the electrostatically attracting surface (23a); a step wherein heat is transferred between the substrate (W) and an electrostatic chuck table (21) by using the gas as a medium, and the substrate (W) is heated or cooled; and a step wherein the air inside the processing chamber (12) is released so as to have the inside under the first pressure, and the substrate (W) is processed under the first pressure.

Description

201027665 六、發明說明： 【發明所屬之技術領域】 本發明係關於利用靜電吸盤工作台之基板處理方法及基 板處理裝置。 【先前技術】201027665 VI. Description of the Invention: [Technical Field] The present invention relates to a substrate processing method and a substrate processing apparatus using an electrostatic chuck table. [Prior Art]

在半導體裝置之製造步驟中，可在減壓下對於半導體基 板（晶圓）進行成膜、蝕刻、表面改質等之各種之處理。然 而’在該等晶圓處理中，重要的是將處王里中之晶圓溫度在 面内整體上均勻控制’且有必要使晶圓之全面對於經溫度 控制工作台均勻地密接固定。作為如此之晶圓之密接固定 方法，目前靜電吸附方式乃為主流。 又有一種方法，其係使晶圓吸附固定於在減壓氛圍中 加熱或冷卻之靜電吸盤卫作台而進行晶圓之溫度控制時， 對工作台之晶圓吸附面供給熱傳導性良好之氣體，在晶圓 下面與工作台之吸附面之間介隔以該氣體而進行熱傳達 (例如’專利文獻1)。 [專利文獻1]曰本特開平7_231〇34號公報 【發明内容】 [發明所欲解決之問題] 在工作台之靜電吸附面，有必要設置某種機構（通過 作台内之氣體供給管等)’以在供給負責晶圓工作台之 2傳達之媒介氣體之情況，用於將該氣體從處理室外 、 、寸面）尤其有必要設置某種機構 以在謀求在晶圓面内之均勺虚In the manufacturing process of the semiconductor device, various processes such as film formation, etching, surface modification, and the like can be performed on the semiconductor substrate (wafer) under reduced pressure. However, in such wafer processing, it is important to uniformly control the wafer temperature in the whole region in-plane and it is necessary to make the wafers uniformly and uniformly fixed to the temperature control table. As a method of attaching and fixing such a wafer, the electrostatic adsorption method is currently the mainstream. There is also a method of supplying a gas having good thermal conductivity to a wafer adsorption surface of a table when the wafer is adsorbed and fixed to an electrostatic chuck of a heated or cooled atmosphere in a reduced pressure atmosphere for wafer temperature control. The heat is transmitted by the gas between the lower surface of the wafer and the adsorption surface of the table (for example, 'Patent Document 1'). [Problem to be Solved by the Invention] It is necessary to provide a certain mechanism (by a gas supply pipe in the stage, etc.) on the electrostatic adsorption surface of the table. It is especially necessary to set up a certain mechanism in order to obtain the medium in the wafer surface in order to supply the medium to the wafer table. Virtual

Ml勺勺處理而使靜電吸盤工作台旋 144129.doc 201027665 之情況時，可對該旋轉中之工作台從處理室外部供給氣 體，因而使裝置構造複雜化，而導致成本提高。 本發明鑑於上述之問題，提供一種基板處理方法及基板 處理裝置，其即使在靜電吸盤工作台未設置氣體供給機 構，亦可在基板與工作台吸附面之間進行將氣體作為媒介 之熱傳達。 [解決問題之手段] 根據本發明之一態樣，提供一種基板處理方法，其特徵 在於在減壓下之處理室内，對於在靜電吸盤工作台之靜電 吸附面所吸附之基板進行處理，該方法具備下列步驟：使 上述基板以對於上述靜電吸附面離間之狀態，施與上述處 理室内較上述處理時之第丨壓力更高之第2壓力；在上述第 2壓力下使上述基板對於上述靜電吸附面移動並使上述 基板吸附於上述靜電吸附面，在上述第2壓力下使存在於 上述處理至之軋體介在於上述基板與上述靜電吸附面之 間，使上述氣體作為媒介在上述基板與上述靜電吸盤工作 台之間進行熱傳達，從而加熱或冷卻上述基板；及排放上 述處理至内之氣體使達上述第1壓力，在上述第1壓力下進 行上述基板之處理。 根據本發明之其他之一態樣，提供一種基板處理裝 置，其特徵在於包含可經由氣體導入口導入氣體，且可經 由排氣口排放氣體之處理室；具有可靜電吸附基板之靜電 吸附面及基板溫度控制機構且在上述處理室内可旋轉地設 置的靜電吸盤工作台；在上述處理室内使上述基板對於上 144129.doc 201027665 述靜電吸附面移動之移動機構；及控制上述處理室内之壓 力及上述移動機構之動作之控制裝置，其係在使上述基板 對於上述靜電吸附面離間的狀態下，將上述處理室内設為 較上述基板處理時之第1壓力更高之第2壓力，在該第2壓 力下’使上述基板對於上述靜電吸附面移動，並吸附於上 述靜電吸附面，以上述基板吸附於上述靜電吸附面之狀 態，將上述處理室内之壓力從上述第2壓力設為上述第1壓 力，而在該第1壓力下進行上述基板之處理。 〇 又’根據本發明之進一步之其他之態樣，提供一種基板 處理裝置，其特徵在於具備··可經由氣體導入口導入氣體 且可經由排氣口排放氣體之處理室；具有可靜電吸附基板 之靜電吸附面及基板溫度控制機構且在上述處理室内可旋 轉地設置的靜電吸盤工作台；在上述處理室内使上述基板 對於上述靜電吸附面移動之移動機構；且以上述基板吸附 於上述靜電吸附面之狀態，在較上述基板之處理時之第工 • 壓力更高之第2壓力下，使存在於上述處理室内之氣體介 在於上述基板與上述靜電吸附面之間，並使上述氣體作為 媒介在上述基板與上述靜電吸附面之間進行熱傳達，從而 可加熱或冷卻上述基板。 [發明效果] 根據本發明，提供一種基板處理方法及基板處理裝置， 其即使在靜電吸盤工作台未設置氣體供給機構，亦可在基 板與工作台吸附面之間進行將氣體作為媒介之熱傳達。 【實施方式】 144129.doc 201027665 以下’參照圖式，就本發明之實施形態進行說明。在本 發明之實施形態中，舉例說明例如將半導體晶圓作為處理 對象之基板，對於該半導體晶圓，在減壓下之處理室内進 行濺鍍成膜處理。 圖1係本發明之實施形態之基板處理裝置之靜電吸盤工 作台設置部分之模式圖。 本實施形態之基板處理裝置具有藉由室壁而圍成之處理 室丨2,在該處理室12内，經由氣體導入口 13可導入各種氣 體，又經由排氣口 16可真空排放氣體。氣體導入口 13介以 氣體導入管14接續於未圖示之氣體供給源。排氣口 16介以 排氣管17接續於未圖示之真空泵等。氣體導入管μ與排氣 管17分別設置有氣體導入閥15、排氣閥18。由於設置於處 理室12之外部之控制裝置5〇控制氣體導入閥15、排氣閥 18，故可控制氧體導入量與排氣量，從而可將處理室Μ内 控制在源自期望之氣體之期望壓力下。 在處理室12之底部附近，設置有靜電吸盤工作台21。在 本實粑形態中，為在半導體晶圓w之被成膜面均勻地成 膜’ 一面使吸附固定於靜電吸盤工作台21之半導體晶圓w 旋轉’一面進行濺鍍成膜。因此，靜電吸盤工作台21係其 旋轉軸26在處理室12之外部連結於未圖示之旋轉驅動機 構’並可旋轉地設置於在圖1中以虛線表示之旋轉中心之 周圍。 在靜電吸盤工作台21之上部’設置有包含金屬製之基礎 構件22與陶瓷製之介電體23之靜電吸盤機構。介電體23係 144129.doc 201027665 形成為例如圓盤狀’在其上面具有圓形狀之靜電吸附面 23a 〇 在介電體23之内部設置有電極，在其内部電極從未圖示 之電源施加電壓時，則將於靜電吸附面23a與載置於其上 之半導體晶圓之間發生靜電力，而半導體晶圓界被吸附固 定在靜電吸附面23a。 又，在靜電吸盤工作台2 1設置有基板溫度控制機構。具 φ 體而3，在靜電吸盤工作台21之内部，形成有冷卻液流路 27作為基板冷卻機構，或如圖3所示内藏有加熱器乃作為 基板加熱機構。基板加熱機構與基板冷卻機構根據需要， 可僅設置其中一者，亦可兩者皆設置。 冷卻液流路27通過靜電吸盤工作台21之旋轉軸％之内 部，在其旋轉軸26之端部介以旋轉接頭，接續在設置於處 理室12之外部之冷卻液供給管或冷卻液供給源。 用於向加熱器25或靜電吸盤用之電極供電之電纜亦通過 • 靜電吸盤工作台21之旋轉軸％之内部，在其旋轉軸26之端 部介以滑動鏈路，接續在設置於處理室12之外部之電力供 給源。 又，在處理室12内，設置有升降機構31作為使半導體晶 圓W對於靜電吸附面23a移動（升降）之移動機構。升降機構 Μ具有桿部33、工作台部34及銷32,該等成為一體而升 降。 桿部33貫通室壁11之底壁部，在處理室12之外部，連結 於未圖示之汽缸裝置又馬達等之驅動機構。藉由該驅動機 144129.doc 201027665 構之驅動而升降桿部33。在室壁11之底壁部之桿部33所貫 通之部分，設置有一面容許桿部33之上下移動一面將處理 室12内外遮斷成氣密狀態之密封機構。 在桿部33之處理室12内之上端部設置有工作台部34。工 作台部34在處理室12内大致水平地展開，在其中央形成有 通過靜電吸盤工作台2 1之旋轉軸26之貫通孔，工作台部34 相對於其旋轉轴26可相對性上下移動。 在工作台部34上’設置有在上方延伸之複數根銷32 ^各 銷32通過貫通靜電吸盤工作台21之上下方向而形成之引導 孔24，成為各銷32之上端部可在靜電吸盤工作台21之上方 突出。 在處理室12内之靜電吸盤工作台21之上方，未圖示之靶 材與靜電吸附面23 a對向而設置。 其次，作為本發明實施形態之基板處理方法，就對於半 導體晶圓W之濺鍍成膜處理進行說明。在本實施形態中， 基於控制裝置50之控制，而控制氣體導入閥Η、排氣閥 18、升降機構31、對靜電吸盤用電極之電壓施加、及基板 溫度控制機構等之動作時機，而實行以下之—系列之處 理。 ’、 丰導體晶圓W藉由搬送機器人等，通過形成於室壁η 曰搬门入口（未圖示），搬入至處理室12内。該搬入後之 ==處理室12内’如圖1(a)所示，被支持於升 機構31之稷數根銷32之前端。 該半導體晶圓w藉由銷32舉起，以對於靜電吸附面2: 144129.doc 201027665 於上方之離間狀態，開啟氣體導入閥15，從氣體導入口 i3 將不活性氣體（例如氬氣）導入至處理室12内。該氣體導入 時，排氣閥18被關閉，因此處理室丨2内之氣體壓力（以 下’亦僅稱為壓力）隨著時間經過而逐漸上升。又，此時 未對靶材施加電力，在處理室12内未產生放電，從而未發 生電楽·。 若在處理室12内使發生電漿而對半導體晶圓w進行濺鍍 〇 成膜時之處理室12内壓力作為第1壓力，則以上述之圖1(a) 所示之狀態之處理室丨2内壓力成為較該第1壓力更高（低真 空）之第2壓力。第丨壓力係適合於期望之濺鍍成膜處理之 壓力，例如，為0.1〜l(Pa)左右。相對於此，第2壓力為 100 〜1000(pa)左右。 在該相對較高之壓力的第2壓力下’使升降機構31下 降。藉此，銷32下降，被支持於其前端之半導體晶圓评朝 靜電吸附面23a移動（下降），從而半導體晶靜如圖i(b)所 • 示被吸附固定於靜電吸附面23a。此時，由於處理室12内 在上述第2壓力下，故在半導體晶圓w與靜電吸附面之 間在第2廢力下介在有存在於處理室12内之氣體。 靜電吸附面23a並非完全平滑之面，例如，存在有加工 痕跡等之細微凹凸（或亦可進行粗糖化處理），即使於吸附 有半導體晶圓W之狀態，其半導體晶靠之下面與靜電吸 附面23a之間仍存在微小之間隙。因此，在其微小間隙中 可封入上述第2壓力下之氣體。 且，若藉由加熱器25加熱靜電吸附面23a或對冷卻液流 144129.doc 201027665 路27供給冷卻液而冷卻靜電吸附面23a，則介在於半導體 晶圓W與靜電吸附面23a之間之上述氣體將作為媒介在半 導體晶圓W與靜電吸附面233之間進行熱傳達，從而可加 熱或冷卻半導體晶圓W。 上述第2壓力為較通常之晶圓處理時之處理室内壓力更 高之壓力，因此可在半導體晶圓w與靜電23a之間存在充 分數量之氣體分子以負責其兩者之間的熱傳導。其結果， 將該氣體作為媒介，可有效地進行從靜電吸附面2^侧向 半導體晶圓W側之熱移動（半導體晶圓w之加熱）或從半導 體晶圓w側向靜電吸附面23a側之熱移動（半導體晶圓w之 冷卻）’可將半導體晶，有效地且確保面内均句性地控制 在期望之溫度。 且，本實施形態中’使在半導體晶圓w與靜電吸附面 23a之間介存有負責兩者之間之熱傳達的媒介氣體，在靜 電吸盤工作台21未設置任何氣體供給機構下，可藉由在較 晶圓處理時璧力增高、可充分發揮作為熱傳達媒：之功‘ 的氣體分子數之第2壓力下進行之方法而實現半導體晶圓 W之吸附。因％，在靜電吸盤卫作⑽，無需另外設置上 述熱媒介用之氣體供給機構，從而使裝置構造簡單化而實 現降低成本。 特別是在本實施形態中’爲使靜電吸盤工作台21可方 轉’故内藏於該靜電吸盤工作台21之靜電吸盤用電極、^ =度控：機構(加熱器25、冷卻液流路叫之供電㈣ 或冷部配管必須通過旋轉轴26内，若在該旋轉㈣内心 144129.doc 201027665 一步通過熱媒介用氣體供給配管，則存在有在旋轉轴26内 之有限空間難於通過之情況。若不要該熱媒介用氣體供給 配管則裝置設計將變得簡單。 另一方面，在對半導體晶圓w進行濺鍍成膜處理時，將 . ㈣閥18打開’排出處理室u内之氣體，且從氣體導入口 導入期望之處理氣體，藉由該等排氣量與氣體導入量之 控制將處理室12内設為較上述第2壓力更低（高真幻之第工 參 Μ力’進而使靜電吸盤工作台21旋轉，在上述第工麼力下 對於半導體晶圓1^進行濺鍍成膜處理。 具體而言’由於對設置於處理室12之上部之未圖示之乾 材施加電壓，故在靶材與靜電吸盤工作台21之間發生發 電，並在處理室12内產生電浆，藉此產生之離子藉由無材 與靜電吸盤工作台21之間之電場朝靶材加速移動而與衝撞 靶材’從而靶材材料之粒子從靶材打出，並吸附堆積於半 導體晶圓w之被成膜面。此時，由於半導體晶圓w隨靜電 φ 吸盤工作台21旋轉，故可提高晶圓面内之膜厚均句性。 又，濺鍍成膜處理時之處理室12内減壓 在半導體晶圓W與靜電吸附面23a之間之微二 述媒介氣體未被完全排出，某程度地殘存。因此，介以該 熱媒介氣體，在濺鐘膜處理中亦可將半導體晶圓评控制在 所需溫度。 其次’圖2係本發日月之其他實施形態之基板處理裝置之 靜電吸盤工作台設置部分的模式圖。再者，就與^所示 之上述實施形態同樣的要素附以相同符號，而省略其詳細 I44129.doc 201027665 說明。 在本實施形態中，在靜電吸附面23a上，形成有面向處 理至12内之複數之凹部41。凹部41未連接於處理室12之外 部氣體供應系統等，而在靜電吸盤工作台21内作為密閉空 間形成。 由於在靜電吸附面23a形成凹部41，故半導體晶圓贾在 上述第2壓力下吸附於靜電吸附面23&時，在凹部41内封入 上述熱媒介氣體，與靜電吸附面23a之表面狀態無關，而 在半導體晶圓W之下面側確實存在熱媒介氣體。 凹部41可形成為狹縫（溝）狀，亦可形成為各自獨立之孔 狀。無論哪個形狀均可使熱媒介氣體在半導體晶圓w之面 方向全體不偏移地存在，凹部41較好在靜電吸附面23&之 面方向整體上分布均勻地形成。 以上，一面參照具體例一面就本發明之實施形態進行說 明。但，本發明不僅限於該等之形態，基於本發明之技術 性思想，可作各種之變更。 作為處理對象之基板，不僅限於半導體晶圓w，亦可為 例如，光微影蝕刻之圖案轉印用之掩模、磁碟狀記錄媒 體、顯示面板基板、太陽電池用面板基板等。又，對於基 板所進行之處理亦不僅限於濺鍍成膜，亦可為濺鍍蝕刻、 CDE(化學乾姓刻，chemical dry etching)、CVD(化學蒸汽 >儿積，chemical vapor deposition)、電漿聚合處理、表面 改質等之處理。 【圖式簡單說明】 144129.doc •12· 201027665 圖1(a)、（b)係本發明之形態之基板處理裝置之靜電吸盤 工作台設置部分之模式圖。 圖2係在同靜電吸工作台盤之靜電吸附面設置凹部之形 態之模式圖。 圖3係在同靜電吸盤工作台内設置加熱器之形態之模式 圖。 【主要元件符號說明】 12 處理室 參 13 氣體導入口 16 排氣口 21 靜電吸盤工作台 22 基礎構件 23 介電體 23a 靜電吸附面 25 加熱器 籲 26 旋轉軸 27 冷卻液流路 31 升降機構 • 41 凹部 . 50 控制裝置 144129.doc -13-When the Ml spoon is processed to rotate the electrostatic chuck table 144129.doc 201027665, the rotating table can be supplied with gas from the outside of the processing chamber, thereby complicating the device structure and resulting in an increase in cost. The present invention has been made in view of the above problems, and provides a substrate processing method and a substrate processing apparatus capable of transferring heat using a gas as a medium between a substrate and a table adsorption surface even if a gas supply mechanism is not provided in the electrostatic chuck table. [Means for Solving the Problem] According to an aspect of the present invention, a substrate processing method is provided, which is characterized in that a substrate adsorbed on an electrostatic adsorption surface of an electrostatic chuck table is processed in a processing chamber under reduced pressure, the method Providing the step of: applying a second pressure higher in a pressure higher than a first pressure in the processing chamber in the processing chamber to a state in which the electrostatic adsorption surface is separated from the electrostatic adsorption surface; and performing the electrostatic adsorption on the substrate under the second pressure Moving the surface and adsorbing the substrate on the electrostatic adsorption surface, and the rolled body present in the processing is interposed between the substrate and the electrostatic adsorption surface under the second pressure, and the gas is used as a medium on the substrate and the above The substrate is heated or cooled by the electrostatic chuck table to heat or cool the substrate; and the gas to be treated therein is discharged to reach the first pressure, and the substrate is processed under the first pressure. According to another aspect of the present invention, a substrate processing apparatus including a processing chamber capable of introducing a gas through a gas introduction port and discharging a gas through an exhaust port, and an electrostatic adsorption surface capable of electrostatically adsorbing the substrate and a substrate temperature control mechanism and an electrostatic chuck table rotatably disposed in the processing chamber; a moving mechanism for moving the substrate to the electrostatic adsorption surface of the substrate in the processing chamber; and controlling the pressure in the processing chamber and the above The control device for the operation of the moving mechanism is configured to set the processing chamber to a second pressure higher than the first pressure during the substrate processing in a state where the substrate is separated from the electrostatic adsorption surface, and the second pressure is the second pressure. The substrate is moved to the electrostatic adsorption surface and adsorbed on the electrostatic adsorption surface, and the substrate is adsorbed on the electrostatic adsorption surface, and the pressure in the processing chamber is set from the second pressure to the first pressure. The substrate is treated under the first pressure. According to still another aspect of the present invention, there is provided a substrate processing apparatus comprising: a processing chamber capable of introducing a gas through a gas introduction port and discharging a gas through an exhaust port; and an electrostatically adsorbable substrate An electrostatic chuck table that is rotatably provided in the processing chamber and a moving mechanism that moves the substrate to the electrostatic adsorption surface in the processing chamber; and the substrate is adsorbed to the electrostatic adsorption In a state of a surface, a gas existing in the processing chamber is interposed between the substrate and the electrostatic adsorption surface at a second pressure higher than a first working pressure of the substrate, and the gas is used as a medium Heat is transferred between the substrate and the electrostatic adsorption surface to heat or cool the substrate. [Effect of the Invention] According to the present invention, there is provided a substrate processing method and a substrate processing apparatus which can perform heat transfer using a gas as a medium between a substrate and a table adsorption surface even if a gas supply mechanism is not provided in the electrostatic chuck table . [Embodiment] 144129.doc 201027665 Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the embodiment of the present invention, for example, a semiconductor wafer is used as a substrate to be processed, and the semiconductor wafer is subjected to a sputtering film formation process in a processing chamber under reduced pressure. Fig. 1 is a schematic view showing a portion of an electrostatic chuck table of a substrate processing apparatus according to an embodiment of the present invention. The substrate processing apparatus according to the present embodiment has a processing chamber 2 surrounded by a chamber wall. In the processing chamber 12, various gases can be introduced through the gas introduction port 13, and the gas can be evacuated through the exhaust port 16. The gas introduction port 13 is connected to a gas supply source (not shown) via the gas introduction pipe 14. The exhaust port 16 is connected to a vacuum pump (not shown) via the exhaust pipe 17. The gas introduction pipe μ and the exhaust pipe 17 are provided with a gas introduction valve 15 and an exhaust valve 18, respectively. Since the control device 5 disposed outside the processing chamber 12 controls the gas introduction valve 15 and the exhaust valve 18, the oxygen introduction amount and the exhaust amount can be controlled, so that the treatment chamber can be controlled to be derived from the desired gas. Under the expected pressure. Near the bottom of the processing chamber 12, an electrostatic chuck table 21 is provided. In the present embodiment, the semiconductor wafer w adsorbed and fixed to the electrostatic chuck table 21 is sputter-deposited while uniformly forming a film on the film formation surface of the semiconductor wafer w. Therefore, the electrostatic chuck table 21 has its rotating shaft 26 connected to a rotation driving mechanism (not shown) outside the processing chamber 12 and is rotatably provided around the center of rotation indicated by a broken line in Fig. 1 . An electrostatic chuck mechanism including a metal base member 22 and a ceramic dielectric body 23 is provided on the upper portion of the electrostatic chuck table 21. The dielectric body 23 is 144129.doc 201027665 formed, for example, in the form of a disk having an electrostatic adsorption surface 23a having a circular shape thereon. An electrode is provided inside the dielectric body 23, and an internal electrode is applied from a power source (not shown). At the time of voltage, an electrostatic force is generated between the electrostatic adsorption surface 23a and the semiconductor wafer placed thereon, and the semiconductor wafer boundary is adsorbed and fixed to the electrostatic adsorption surface 23a. Further, a substrate temperature control mechanism is provided on the electrostatic chuck table 2 1 . There is a φ body 3, and inside the electrostatic chuck table 21, a coolant flow path 27 is formed as a substrate cooling mechanism, or as shown in Fig. 3, a heater is incorporated as a substrate heating mechanism. The substrate heating mechanism and the substrate cooling mechanism may be provided with only one of them or both. The coolant flow path 27 passes through the inside of the rotating shaft % of the electrostatic chuck table 21, and is connected to the coolant supply pipe or the coolant supply source provided outside the processing chamber 12 via a rotary joint at the end of the rotating shaft 26 thereof. . The cable for supplying power to the heater 25 or the electrode for the electrostatic chuck also passes through the inside of the rotating shaft % of the electrostatic chuck table 21, and has a sliding link at the end of the rotating shaft 26, and is successively disposed in the processing chamber. 12 external power supply. Further, in the processing chamber 12, a lifting mechanism 31 is provided as a moving mechanism for moving (lifting) the semiconductor wafer W to the electrostatic adsorption surface 23a. The elevating mechanism Μ has a rod portion 33, a table portion 34, and a pin 32, which are integrally raised and lowered. The rod portion 33 penetrates the bottom wall portion of the chamber wall 11, and is connected to a drive mechanism such as a cylinder device and a motor (not shown) outside the processing chamber 12. The lever portion 33 is lifted by the driving of the driver 144129.doc 201027665. A sealing mechanism that allows the rod portion 33 to move up and down while blocking the inside and the outside of the processing chamber 12 in an airtight state is provided in a portion where the rod portion 33 of the bottom wall portion of the chamber wall 11 is passed. A table portion 34 is provided at an upper end portion of the processing chamber 12 of the rod portion 33. The table portion 34 is substantially horizontally spread in the processing chamber 12, and a through hole passing through the rotating shaft 26 of the electrostatic chuck table 21 is formed at the center thereof, and the table portion 34 is relatively movable up and down with respect to the rotating shaft 26 thereof. The table portion 34 is provided with a plurality of pins 32 extending upward. The pin 32 passes through the guide holes 24 formed in the upper and lower directions of the electrostatic chuck table 21, so that the upper ends of the pins 32 can be operated on the electrostatic chuck. The top of the table 21 is highlighted. Above the electrostatic chuck table 21 in the processing chamber 12, a target (not shown) is disposed opposite to the electrostatic adsorption surface 23a. Next, as a substrate processing method according to an embodiment of the present invention, a sputtering film formation process of the semiconductor wafer W will be described. In the present embodiment, based on the control of the control device 50, the gas introduction valve Η, the exhaust valve 18, the elevating mechanism 31, the voltage application to the electrostatic chuck electrode, and the substrate temperature control mechanism are controlled to operate. The following - the processing of the series. The abundance conductor wafer W is carried into the processing chamber 12 by a transfer robot or the like by a transfer robot or the like, which is formed at the chamber wall η 曰 moving door entrance (not shown). The inside of the processing chamber 12 after the loading is supported by the front end of the number of pins 32 of the lifting mechanism 31 as shown in Fig. 1(a). The semiconductor wafer w is lifted by the pin 32, and the gas introduction valve 15 is opened to the upper side of the electrostatic adsorption surface 2: 144129.doc 201027665, and an inert gas (for example, argon gas) is introduced from the gas introduction port i3. Up to the processing chamber 12. When the gas is introduced, the exhaust valve 18 is closed, so that the gas pressure (hereinafter referred to as "pressure") in the process chamber 2 gradually rises as time passes. Further, at this time, no electric power was applied to the target, and no discharge occurred in the processing chamber 12, so that no electric power was generated. When the plasma in the processing chamber 12 is plasma-sputtered and the semiconductor wafer w is sputtered and the pressure in the processing chamber 12 is the first pressure, the processing chamber in the state shown in FIG. 1(a) is used. The pressure in the crucible 2 becomes the second pressure higher than the first pressure (low vacuum). The second pressure is suitable for the pressure of the desired sputtering film formation treatment, for example, about 0.1 to 1 (Pa). On the other hand, the second pressure is about 100 to 1000 (pa). At the second pressure of the relatively high pressure, the elevating mechanism 31 is lowered. As a result, the pin 32 is lowered, and the semiconductor wafer supported on the front end thereof is moved (dropped) toward the electrostatic adsorption surface 23a, so that the semiconductor crystal is adsorbed and fixed to the electrostatic adsorption surface 23a as shown in Fig. i(b). At this time, since the inside of the processing chamber 12 is at the above-described second pressure, the gas existing in the processing chamber 12 is interposed between the semiconductor wafer w and the electrostatic adsorption surface under the second waste force. The electrostatic adsorption surface 23a is not completely smooth, and for example, fine irregularities such as processing marks may be present (or may be subjected to rough saccharification treatment), and even under the state in which the semiconductor wafer W is adsorbed, the underside of the semiconductor crystal is electrostatically adsorbed. There is still a slight gap between the faces 23a. Therefore, the gas at the second pressure can be sealed in the minute gap. When the electrostatic adsorption surface 23a is heated by the heater 25 or the cooling liquid is supplied to the cooling liquid flow 144129.doc 201027665, the electrostatic adsorption surface 23a is cooled, and the above is between the semiconductor wafer W and the electrostatic adsorption surface 23a. The gas is used as a medium to transfer heat between the semiconductor wafer W and the electrostatic adsorption surface 233, so that the semiconductor wafer W can be heated or cooled. The second pressure is a pressure higher than the pressure in the processing chamber during normal wafer processing, so that a sufficient amount of gas molecules can be present between the semiconductor wafer w and the static electricity 23a to be responsible for heat conduction therebetween. As a result, the gas can be efficiently transferred from the electrostatic adsorption surface 2 to the semiconductor wafer W side (heating of the semiconductor wafer w) or from the semiconductor wafer w side to the electrostatic adsorption surface 23a side. The thermal movement (cooling of the semiconductor wafer w) 'can crystallize the crystal effectively and ensure that the in-plane uniformity is controlled at the desired temperature. Further, in the present embodiment, 'the medium gas for transferring heat between the semiconductor wafer w and the electrostatic adsorption surface 23a is disposed, and the electrostatic chuck table 21 is not provided with any gas supply mechanism. The adsorption of the semiconductor wafer W is achieved by a method in which the force is increased during the wafer processing and the second pressure of the number of gas molecules as the heat transfer medium is sufficiently exhibited. Because of the %, in the electrostatic chuck (10), it is not necessary to separately provide the gas supply mechanism for the above-mentioned heat medium, thereby simplifying the structure of the apparatus and achieving cost reduction. In particular, in the present embodiment, the electrode for the electrostatic chuck, which is built in the electrostatic chuck table 21, is used for the electrostatic chuck table 21, and the mechanism (the heater 25 and the coolant flow path) The power supply (4) or the cold piping must pass through the rotating shaft 26, and if the rotating medium (four) inner core 144129.doc 201027665 passes through the heat medium gas supply piping in one step, there is a case where the limited space in the rotating shaft 26 is difficult to pass. If the heat supply gas supply pipe is not required, the device design will be simple. On the other hand, when the semiconductor wafer w is subjected to a sputtering film formation process, the valve (4) is opened to discharge the gas in the processing chamber u. And introducing a desired processing gas from the gas introduction port, and controlling the inside of the processing chamber 12 to be lower than the second pressure by the control of the amount of the exhaust gas and the introduction amount of the gas (the high-fidelity work parameter) The electrostatic chuck table 21 is rotated, and the semiconductor wafer 1 is subjected to a sputtering film formation process under the above-described work force. Specifically, "the voltage is applied to a dry material (not shown) provided on the upper portion of the processing chamber 12. Therefore Power generation occurs between the target and the electrostatic chuck table 21, and plasma is generated in the processing chamber 12, whereby the generated ions are accelerated by the electric field between the materialless and the electrostatic chuck table 21 toward the target. The target material "the particles of the target material are ejected from the target and adsorbed and deposited on the film formation surface of the semiconductor wafer w. At this time, since the semiconductor wafer w rotates with the electrostatic φ chuck table 21, the wafer can be improved. The thickness of the film in the plane is uniform. Further, in the processing chamber 12 during the sputtering film formation process, the micro-two medium gas between the semiconductor wafer W and the electrostatic adsorption surface 23a is not completely discharged, to some extent. Therefore, the semiconductor wafer can be controlled to the required temperature during the splatter treatment by the hot medium gas. Next, FIG. 2 is an electrostatic chuck of the substrate processing apparatus of other embodiments of the present invention. The same components as those of the above-described embodiment shown in Fig. 2 are denoted by the same reference numerals, and the detailed description of I44129.doc 201027665 is omitted. In the present embodiment, on the electrostatic adsorption surface 23a The recess 41 is formed to face the plurality of recesses 41. The recess 41 is not connected to the external air supply system of the processing chamber 12, but is formed as a sealed space in the electrostatic chuck table 21. Since the recess 41 is formed in the electrostatic chucking surface 23a. Therefore, when the semiconductor wafer is adsorbed to the electrostatic adsorption surface 23 & at the second pressure, the heat medium gas is sealed in the recess 41, regardless of the surface state of the electrostatic adsorption surface 23a, and is on the lower surface side of the semiconductor wafer W. The heat medium gas is actually present. The concave portion 41 may be formed in a slit shape or in a shape of a separate hole. In any shape, the heat medium gas may be entirely offset in the direction of the surface of the semiconductor wafer w. Preferably, the concave portion 41 is preferably uniformly distributed over the entire surface of the electrostatic adsorption surface 23 & As described above, the embodiment of the present invention will be described with reference to specific examples. However, the present invention is not limited to the above-described forms, and various modifications can be made based on the technical idea of the present invention. The substrate to be processed is not limited to the semiconductor wafer w, and may be, for example, a mask for pattern transfer of photolithography, a magnetic disk-shaped recording medium, a display panel substrate, or a panel substrate for a solar cell. Moreover, the processing performed on the substrate is not limited to sputtering, and may be sputtering etching, CDE (chemical dry etching), CVD (chemical vapor deposition), and electricity. Treatment of slurry polymerization treatment, surface modification, and the like. [Brief Description of the Drawings] 144129.doc • 12· 201027665 Fig. 1 (a) and (b) are schematic views showing the installation portion of the electrostatic chuck table of the substrate processing apparatus of the embodiment of the present invention. Fig. 2 is a schematic view showing a state in which a concave portion is provided on the electrostatic adsorption surface of the electrostatic chuck table. Fig. 3 is a schematic view showing a state in which a heater is provided in the electrostatic chuck table. [Description of main components] 12 Processing chamber reference 13 Gas inlet 16 Exhaust port 21 Electrostatic chuck table 22 Base member 23 Dielectric body 23a Electrostatic adsorption surface 25 Heater 26 Rotary shaft 27 Coolant flow path 31 Lifting mechanism • 41 recess. 50 control unit 144129.doc -13-

Claims (1)

201027665 七、申請專利範圍： 1. 一種基板處理方法，其特徵在於： 其係在減壓下之處理室内，對於吸附於靜電吸盤工作 台之靜電吸附面之基板進行處理者， 該基板處理方法具備以下步驟： 在使上述基板對於上述靜電吸附面離間之狀態下，將 上述處理室内設為較上述處理時之第1壓力更高之第2壓 力； 在上述第2壓力下使上述基板對於上述靜電吸附面移 動，並使上述基板吸附於上述靜電吸附面，在上述第2 壓力下使存在於上述處理室之氣體介在於上述基板與上 述靜電吸附面之間； 使上述氣體作為媒介在上述基板與上述靜電吸盤工作 台之間進行熱傳達’而加熱或冷卻上述基板；及 排放上述處理室内之氣體使其成為上述第1壓力，在 Φ 上述第1壓力下進行上述基板之處理。 2. 如請求項1之基板處理方法’其中使吸附上述基板之狀 態的上述靜電吸盤工作台一面旋轉，一面在上述第1壓 . 力下對於上述基板進行上述處理。 . 3. 一種基板處理裝置，其特徵在於具備： 可經由氣體導入口導入氣體且可經由排氣口排放氣體 之處理室； 具有可靜電吸附基板之靜電吸附面及基板溫度控制機 構且在上述處理室内可旋轉地設置的靜電吸盤工作台； 144129.doc 201027665 在上述處理室内使上述基板對於上述靜電吸附面移動 之移動機構；及 控制上述處理室内之壓力及上述移動機構之動作之控 制裝置’其係在使上述基板以對於上述靜電吸附面離間 的狀態下’將上述處理室内設為較上述基板處理時之第 1壓力更尚之第2壓力，在該第2壓力下，使上述基板對 於上述靜電吸附面移動’並吸附於上述靜電吸附面，在 上述基板吸附於上述靜電吸附面之狀態下，將上述處理 至内之壓力從上述第2壓力設成上述第1麼力，而在該第 1壓力下進行上述基板之處理。 4. 一種基板處理裝置，其特徵在於具備： 可經由氣體導入口導入氣體且可經由排氣口排放氣體 之處理室； 具有可靜電吸附基板之靜電吸附面及基板溫度控制機 構且在上述處理室内可旋轉地設置的靜電吸盤工作台；及 在上述處理室内使上述基板對於上述靜電吸附面移動 之移動機構；且 在上述基板吸附於上述靜電吸附面之狀態下，在較上 述基板之處理時之第1壓力更高之第2壓力下，使存在於 上述處理室内之氣體介在於上述基板與上述靜電吸附面 之間，並使上述氣體作為媒介在上述基板與上述靜電吸 盤工作台之間進行熱傳達，而可加熱或冷卻上述基板。 5. 如請求項3或4之基板處理裝置，其中在上述靜電吸附面 上，形成有面向上述處理室内之凹部， 144129. doc 201027665 上述凹部未連接於上述處理室之外部之氣體供應系 統，而在上述靜電吸盤工作台内以密閉空間而形成， 在上述基板吸附於上述靜電吸附面之狀態可在上述凹 部内封入上述氣體。201027665 VII. Patent application scope: 1. A substrate processing method, characterized in that: in a processing chamber under reduced pressure, for processing a substrate adsorbed on an electrostatic adsorption surface of an electrostatic chuck table, the substrate processing method is provided a step of: setting the processing chamber to a second pressure higher than a first pressure during the processing in a state in which the substrate is separated from the electrostatic adsorption surface; and performing the electrostatic on the substrate under the second pressure The adsorption surface moves, and the substrate is adsorbed on the electrostatic adsorption surface, and the gas existing in the processing chamber is interposed between the substrate and the electrostatic adsorption surface under the second pressure; and the gas is used as a medium on the substrate The electrostatic chuck table is thermally transferred to heat or cool the substrate; and the gas in the processing chamber is discharged to be the first pressure, and the substrate is processed under the first pressure of Φ. 2. The substrate processing method of claim 1, wherein the electrostatic chuck table that adsorbs the substrate is rotated while the substrate is subjected to the above-described treatment under the first pressure. A substrate processing apparatus comprising: a processing chamber capable of introducing a gas through a gas introduction port and discharging a gas through an exhaust port; an electrostatic adsorption surface capable of electrostatically adsorbing the substrate; and a substrate temperature control mechanism An electrostatic chuck table rotatably disposed in the room; 144129.doc 201027665 a moving mechanism for moving the substrate to the electrostatic adsorption surface in the processing chamber; and a control device for controlling the pressure in the processing chamber and the movement of the moving mechanism In a state in which the substrate is separated from the electrostatic adsorption surface, the processing chamber is set to a second pressure that is higher than the first pressure during the substrate processing, and the substrate is subjected to the static electricity under the second pressure. The adsorption surface moves 'and adsorbs on the electrostatic adsorption surface, and the pressure in the treatment is set from the second pressure to the first force in a state where the substrate is adsorbed on the electrostatic adsorption surface, and the first pressure is The treatment of the above substrate is carried out under pressure. A substrate processing apparatus comprising: a processing chamber capable of introducing a gas through a gas introduction port and discharging a gas through an exhaust port; an electrostatic adsorption surface capable of electrostatically adsorbing the substrate; and a substrate temperature control mechanism in the processing chamber a rotatably disposed electrostatic chuck table; and a moving mechanism for moving the substrate to the electrostatic adsorption surface in the processing chamber; and in a state in which the substrate is adsorbed on the electrostatic adsorption surface, when the substrate is processed The second pressure higher than the second pressure causes the gas existing in the processing chamber to be interposed between the substrate and the electrostatic adsorption surface, and the gas is used as a medium to heat between the substrate and the electrostatic chuck table. The substrate can be heated or cooled. 5. The substrate processing apparatus of claim 3 or 4, wherein the electrostatic adsorption surface is formed with a concave portion facing the processing chamber, 144129. doc 201027665 the concave portion is not connected to the gas supply system outside the processing chamber, and The electrostatic chuck table is formed in a sealed space, and the gas can be sealed in the recessed portion while the substrate is adsorbed on the electrostatic adsorption surface. 144129.doc144129.doc
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