CN114823307A - Semiconductor annealing method, annealing device and annealing system - Google Patents
Semiconductor annealing method, annealing device and annealing system Download PDFInfo
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- CN114823307A CN114823307A CN202210681195.5A CN202210681195A CN114823307A CN 114823307 A CN114823307 A CN 114823307A CN 202210681195 A CN202210681195 A CN 202210681195A CN 114823307 A CN114823307 A CN 114823307A
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67248—Temperature monitoring
Abstract
The invention relates to the technical field of semiconductor device preparation, and particularly discloses a semiconductor annealing method, an annealing device and an annealing system, wherein the method comprises the following steps: acquiring surface temperature information of the SiC semiconductor sheet; carrying out microwave heating on the SiC semiconductor sheet by using a heating temperature lower than the melting point temperature of the monocrystalline silicon; when the surface temperature information reaches a preset first temperature threshold value, performing movable electron beam heating on the SiC semiconductor sheet until the annealing treatment of the SiC semiconductor sheet is completed; according to the method, the temperature required by the annealing treatment of the SiC semiconductor sheet can be reduced to an expected range by heating the SiC semiconductor sheet to the first temperature threshold value through microwave heating treatment, and the accurate temperature control annealing treatment is performed on the SiC semiconductor sheet through electron beam heating, so that the annealing treatment temperature is reduced and the annealing treatment efficiency is improved under the condition that the annealing treatment effect is ensured.
Description
Technical Field
The application relates to the technical field of semiconductor device preparation, in particular to a semiconductor annealing method, an annealing device and an annealing system.
Background
In the prior art, after a semiconductor sheet is prepared, annealing treatment needs to be carried out, but the annealing treatment temperature is high, and damage to surface elements or a protective layer is easily caused, for example, for a SiC semiconductor sheet prepared by ion implantation SiC, the rapid annealing temperature is generally above 1600 ℃, the melting point of Si is 1400 ℃, the melting point of SiC is 1700 ℃, the annealing treatment of the SiC semiconductor sheet needs to be heated for a period of time within the temperature range of 1600-2000 ℃, ions can be activated in the annealing treatment process, but the volatilization of Si elements on the surface of the material can be caused, and damage to an original SiC wafer is probably caused, and at present, the method is mainly avoided that a protective layer is plated on the surface of the SiC semiconductor sheet. However, above 1600 ℃, the stability of the protective layer material is insufficient, the protection performance is poor, and the damage is easy to occur.
In view of the above problems, no effective technical solution exists at present.
Disclosure of Invention
The invention aims to provide a semiconductor annealing method, an annealing device and an annealing system, which can reduce the annealing temperature, improve the annealing efficiency and solve the problem of damage to surface elements or protective layers of SiC semiconductor sheets under the condition of ensuring the annealing effect.
In a first aspect, the present application provides a semiconductor annealing method for annealing a SiC semiconductor sheet, the method comprising the steps of:
acquiring surface temperature information of the SiC semiconductor sheet;
carrying out microwave heating on the SiC semiconductor sheet;
and when the surface temperature information reaches a preset first temperature threshold value, performing movable electron beam heating on the SiC semiconductor sheet by using a heating temperature lower than the melting point temperature of the monocrystalline silicon until the annealing treatment of the SiC semiconductor sheet is completed.
According to the semiconductor annealing method, two heating means of microwave heating and electron beam heating are combined to carry out annealing treatment on the SiSiC semiconductor sheet, the annealing treatment temperature can be reduced under the condition that the annealing treatment effect is guaranteed, the temperature required by the annealing treatment is lower than the melting point temperature of monocrystalline silicon, and the problem of damage to surface elements or a protective layer of the SiC semiconductor sheet is solved.
The semiconductor annealing method described above, wherein a position of the electron beam heating corresponds to a position of the surface temperature information, and the step of performing the electron beam heating with mobility on the SiC semiconductor sheet with a heating temperature lower than a melting point temperature of single-crystal silicon until the SiC semiconductor sheet annealing process is completed includes:
locally heating the SiC semiconductor sheet by using electron beams;
and when the surface temperature information reaches a preset second temperature threshold, switching the local heating position of the electron beam according to a preset annealing path, wherein the second temperature threshold is less than the melting point temperature of the monocrystalline silicon.
The semiconductor annealing method, wherein the second temperature threshold is 1.5-3 times of the first temperature threshold.
In the semiconductor annealing method of this example, the second temperature threshold is designed to be 1.5-3 times the first temperature threshold, so that the annealing effect can be prevented from being affected by the temperature rise of the microwave heating, that is, the annealing treatment is performed under the condition that the first temperature threshold and the second temperature threshold have a sufficient temperature difference, and the annealing treatment effect is prevented from being affected by a large temperature difference caused by instability of the microwave heating when the heat generated by the microwave heating is superposed with the heat generated by the electron beam heating.
In a second aspect, the present application also provides a semiconductor annealing apparatus for annealing a SiC semiconductor sheet by the semiconductor annealing method provided in the first aspect, the semiconductor annealing apparatus including:
an annealing chamber;
the bearing mechanism is fixed in the annealing chamber and used for bearing the SiC semiconductor sheet;
the temperature measuring mechanism is arranged above the bearing mechanism and used for measuring the surface temperature information of the SiC semiconductor sheet;
the microwave heating mechanism is arranged below the bearing mechanism and used for carrying out microwave heating on the SiC semiconductor sheet;
the electron beam heating mechanism is arranged above the bearing mechanism and used for locally heating the surface of the SiC semiconductor sheet by using electron beams;
and the moving mechanism is used for switching the local heating position of the electron beam heating mechanism on the surface of the SiC semiconductor sheet so as to realize movable electron beam heating.
The semiconductor annealing device combines the microwave heating mechanism and the electron beam heating mechanism to perform annealing treatment on the SiC semiconductor sheet by utilizing two heating means of microwave heating and electron beam heating, can reduce the annealing treatment temperature under the condition of ensuring the annealing treatment effect, enables the temperature required by the annealing treatment to be lower than the melting point temperature of monocrystalline silicon, and solves the problem of damage of surface elements or protective layers of the SiC semiconductor sheet.
The semiconductor annealing apparatus described above, wherein the moving mechanism includes:
the first rotating assembly is mounted on the supporting mechanism and used for driving the SiC semiconductor sheet to rotate;
and the first linear driving assembly is connected with the electron beam heating mechanism and is used for driving the electron beam heating mechanism to perform horizontal displacement.
In the semiconductor annealing device of the example, the first rotating assembly can drive the SiC semiconductor sheet to rotate by a specific angle according to the annealing treatment process, and the first linear driving assembly can drive the electron beam heating mechanism to move by a specific stroke along the direction vertical to the rotating shaft of the SiC semiconductor sheet according to the annealing treatment process so that the electron beam can bombard on each position of the surface of the SiC semiconductor sheet.
The semiconductor annealing apparatus described above, wherein the moving mechanism includes:
the longitudinal driving assembly is connected with the electron beam heating mechanism and is used for driving the electron beam heating mechanism to perform longitudinal horizontal displacement;
and the transverse driving assembly is connected with the longitudinal driving assembly and is used for driving the electron beam heating mechanism to perform transverse horizontal displacement.
The semiconductor annealing apparatus described above, wherein the moving mechanism includes:
the second rotating assembly is mounted on the supporting mechanism and used for driving the SiC semiconductor sheet to rotate;
and the second linear driving assembly is connected with the second rotating assembly and is used for driving the second rotating assembly to perform horizontal displacement.
In the semiconductor annealing device, the temperature measuring position of the temperature measuring mechanism is aligned with the local heating position of the electron beam heating mechanism.
The semiconductor annealing device further comprises a loading cavity for storing the SiC semiconductor sheets and a loading and unloading manipulator for transferring the SiC semiconductor sheets.
In a third aspect, the present application also provides a semiconductor annealing system for annealing a SiC semiconductor sheet, the semiconductor annealing system including a semiconductor annealing apparatus and a controller, the semiconductor annealing apparatus including:
an annealing chamber;
the bearing mechanism is fixed in the annealing chamber and used for bearing the SiC semiconductor sheet;
the temperature measuring mechanism is arranged above the bearing mechanism and used for measuring the surface temperature information of the SiC semiconductor sheet;
the microwave heating mechanism is arranged below the bearing mechanism and used for carrying out microwave heating on the SiC semiconductor sheet;
the electron beam heating mechanism is arranged above the bearing mechanism and used for locally heating the surface of the SiC semiconductor sheet by using electron beams;
a moving mechanism for switching the electron beam heating mechanism to a local heating position on the surface of the SiC semiconductor sheet to achieve electron beam heating with mobility;
the controller is electrically connected with the temperature measuring mechanism, the microwave heating mechanism, the electron beam heating mechanism and the moving mechanism;
the controller is used for acquiring the surface temperature information;
the controller is also used for controlling the microwave heating mechanism to perform microwave heating on the SiC semiconductor sheet;
the controller is further used for controlling the electron beam heating mechanism and the moving mechanism to cooperatively operate to perform movable electron beam heating on the SiC semiconductor sheet by using the heating temperature lower than the melting point temperature of the monocrystalline silicon until the annealing treatment of the SiC semiconductor sheet is completed when the surface temperature information reaches a preset first temperature threshold value.
The semiconductor annealing system combines the microwave heating mechanism and the electron beam heating mechanism to perform annealing treatment on the SiC semiconductor sheet by utilizing two heating means of microwave heating and electron beam heating, can reduce the annealing treatment temperature under the condition of ensuring the annealing treatment effect, enables the temperature required by the annealing treatment to be lower than the melting point temperature of monocrystalline silicon, and solves the problem of damage of surface elements or protective layers of the SiC semiconductor sheet.
From the above, the present application provides a semiconductor annealing method, an annealing apparatus, and an annealing system, wherein the annealing method combines two heating means, namely microwave heating and electron beam heating, to perform annealing treatment on a SiC semiconductor sheet, the temperature required for the annealing treatment of the SiC semiconductor sheet can be reduced to below the melting point temperature of single crystal silicon by heating the SiC semiconductor sheet to a first temperature threshold by the microwave heating treatment, and then the temperature-controlled annealing treatment can be performed on the SiC semiconductor sheet accurately by the electron beam heating at a heating temperature lower than the melting point temperature of single crystal silicon, so that the annealing treatment temperature can be reduced, the annealing treatment efficiency can be improved, the problem of damage to surface elements or a protective layer of the SiC semiconductor sheet can be solved while the annealing treatment effect is ensured, and even the protective layer on the surface of the SiC semiconductor sheet can be omitted in the annealing treatment process.
Drawings
Fig. 1 is a flowchart of a semiconductor annealing method according to an embodiment of the present application.
Fig. 2 is a schematic structural diagram of a semiconductor annealing device according to an embodiment of the present application after hiding an outer wall of an annealing chamber.
Fig. 3 is a schematic top view of the first rotating assembly.
Fig. 4 is a schematic structural diagram of another preferred embodiment of the semiconductor annealing device according to the embodiment of the present application after hiding part of the outer wall of the annealing chamber.
Fig. 5 is a schematic structural diagram of another preferred embodiment of the semiconductor annealing device according to the embodiment of the present application after hiding part of the outer wall of the annealing chamber.
Fig. 6 is a schematic structural diagram of a front cross-sectional view of a semiconductor annealing apparatus according to an embodiment of the present application.
Fig. 7 is a schematic connection structure diagram of an electric control component of a semiconductor annealing system according to an embodiment of the present application.
Reference numerals: 1. an annealing chamber; 2. a support mechanism; 3. a temperature measuring mechanism; 4. a microwave heating mechanism; 5. an electron beam heating mechanism; 6. a moving mechanism; 7. a loading chamber; 8. a feeding and discharging manipulator; 9. a controller; 61. a first rotating assembly; 62. a first linear drive assembly; 63. a longitudinal drive assembly; 64. a lateral drive assembly; 65. a second rotating assembly; 66. a second linear drive assembly.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present application without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. Meanwhile, in the description of the present application, the terms "first", "second", and the like are used only for distinguishing the description, and are not to be construed as indicating or implying relative importance.
In a first aspect, please refer to fig. 1, fig. 1 is a semiconductor annealing method for annealing a SiC semiconductor sheet in some embodiments of the present application, the method including the steps of:
s1, acquiring surface temperature information of the SiC semiconductor sheet;
specifically, the surface temperature information is temperature data of a local area or a certain position on the surface of the SiC semiconductor sheet, and may be remotely acquired by a temperature measuring mechanism such as an infrared probe.
S2, carrying out microwave heating on the SiC semiconductor sheet;
specifically, microwave heating mainly utilizes dipoles to oscillate in an electric field, and generates heat through friction to heat the SiC semiconductor sheet, and belongs to a regional heating means.
And S3, when the surface temperature information reaches a preset first temperature threshold value, performing movable electron beam heating on the SiC semiconductor sheet by using a heating temperature lower than the melting point temperature of the monocrystalline silicon until the annealing treatment of the SiC semiconductor sheet is completed.
Specifically, the SiC semiconductor sheet belongs to a dielectric, when the SiC semiconductor sheet is heated by microwave, the dielectric absorbs the microwave to generate a dielectric relaxation effect, that is, reactant molecules fall behind the oscillation frequency of electromagnetic waves to generate a relaxation phenomenon, so that the collision frequency inside the material molecules can be increased, the reaction activation energy is reduced, the reaction speed is increased, and the reaction temperature is reduced, therefore, the temperature condition required by the annealing treatment of the SiC semiconductor sheet can be reduced through the treatment of the step S2, on the basis, the step S3 performs mobile electron beam heating on the SiC semiconductor sheet by using the heating temperature lower than the melting point temperature of monocrystalline silicon, the annealing treatment of the SiC semiconductor sheet can be performed gradually under the condition of lower temperature, the process requirement of the annealing treatment is reduced, the annealing treatment efficiency is improved (that is, the time required by temperature rise is reduced), and the problem of damage to elements on the surface of the SiC semiconductor sheet or to the protective layer is solved, the heating temperature of the electron beam heating is set to be lower than the melting point temperature of monocrystalline silicon, namely lower than 1400 ℃, and lower than the melting point temperature of 1700 ℃ of SiC, so that the Si element and the SiC are not damaged, the SiC semiconductor sheet can be smoothly and fully annealed without plating a protective layer on the surface, and the surface of the SiC semiconductor sheet can be effectively prevented from being damaged.
More specifically, microwave heating cannot accurately control dipoles, and has the disadvantages of poor heating stability, poor uniformity and long annealing holding time, and if the whole annealing treatment is completed by directly adopting microwave heating, the whole annealing treatment effect of the SiC semiconductor sheet is often uneven, and the processing quality of a product is restricted.
More specifically, as can be seen from the foregoing, the microwave heating is used in the embodiment of the present application to reduce the temperature condition required for the electron beam heating annealing treatment, and therefore, the microwave heating only needs to heat the SiC semiconductor sheet to the preset first temperature threshold value, which is determined by simulation or experiment, and which is designed in such a manner that the temperature deviation required for the electron beam heating annealing treatment is reduced to a temperature that does not damage surface elements or a protective layer of the SiC semiconductor sheet, and the electron beam heating temperature can be adjusted to be lower than the melting point temperature of the single crystal silicon by generally adjusting the temperature required for the electron beam heating annealing treatment to be reduced by 500 ℃.
According to the semiconductor annealing method, the SiC semiconductor sheet is subjected to annealing treatment by combining two heating means of microwave heating and electron beam heating, wherein the temperature required by the annealing treatment of the SiC semiconductor sheet can be reduced to be lower than the melting point temperature of monocrystalline silicon by heating the SiC semiconductor sheet to the first temperature threshold value through the microwave heating treatment, and then the SiC semiconductor sheet is subjected to accurate temperature control annealing treatment through the electron beam heating with the heating temperature lower than the melting point temperature of the monocrystalline silicon.
In some preferred embodiments, the position of the electron beam heating corresponds to the position of the surface temperature information, and the step of performing the electron beam heating with mobility on the SiC semiconductor sheet with a heating temperature lower than the melting point temperature of the single crystal silicon until the SiC semiconductor sheet annealing process is completed includes:
s31, locally heating the SiC semiconductor sheet by using electron beams;
specifically, this step generally employs an electron beam heating mechanism such as an electron gun to generate an electron beam to bombard a specific position on the surface of the SiC semiconductor sheet to locally heat the SiC semiconductor sheet.
And S32, when the surface temperature information reaches a preset second temperature threshold value, switching the local heating position of the electron beam according to a preset annealing path, wherein the second temperature threshold value is smaller than the melting point temperature of the monocrystalline silicon.
Specifically, the preset second temperature threshold is the temperature required for the electron beam heating annealing treatment after the SiC semiconductor sheet is subjected to the microwave heating treatment, and is measured according to simulation or experiment, and in general, the higher the first temperature threshold is, the smaller the second temperature threshold is, so that the second temperature threshold and the first temperature threshold should be set in relation to each other, that is, the first temperature threshold needs to adjust the electron beam annealing treatment temperature to be below 1400 ℃, so that the second temperature threshold can be set below 1400 ℃.
More specifically, the annealing path is a heating and annealing treatment path set according to the processing technology and used for guiding the moving path of the electron beam relative to the SiC semiconductor sheet, and in the embodiment of the present application, the moving path of the electron beam relative to the surface of the SiC semiconductor sheet, therefore, the setting of the annealing path should completely cover all parts of the SiC semiconductor sheet that need to be annealed, so that the whole SiC semiconductor sheet can be annealed after the electron beam heats the SiC semiconductor sheet according to the annealing path.
More specifically, in general, the annealing treatment has a certain annealing holding time requirement, and therefore, step S32 should be understood as follows, corresponding to the annealing treatment process having the annealing holding time requirement: when the surface temperature information reaches a preset second temperature threshold value, the local heating position of the electron beam is switched in a delayed manner according to a preset annealing path; the delay interval is required to meet the annealing hold time.
In some preferred embodiments, the second temperature threshold is 1.5 to 3 times the first temperature threshold.
Specifically, the second temperature threshold is designed to be 1.5-3 times of the first temperature threshold, so that the annealing effect can be prevented from being influenced by the temperature rise of the microwave heating, namely, the annealing treatment is carried out under the condition that the first temperature threshold and the second temperature threshold have enough temperature difference, and the annealing treatment effect is prevented from being influenced by the larger temperature difference caused by the instability of the microwave heating when the heat generated by the microwave heating and the heat heated by the electron beam are superposed.
In some preferred embodiments, the first temperature threshold is 400-; the specific setting values of the first temperature threshold and the second temperature threshold are set according to the processing efficiency and the equipment parameters, and the conditions that the first temperature threshold is 400-600 ℃, the second temperature threshold is 900-1200 ℃ and the second temperature threshold is 1.5-3 times of the first temperature threshold are required to be met.
In the embodiment of the present application, the first temperature threshold is preferably 500 ℃, and the second temperature threshold is preferably 1200 ℃; after the SiC semiconductor sheet is subjected to the microwave treatment using the first temperature threshold of 500 ℃, the electron beam heating annealing treatment temperature of the SiC semiconductor sheet can be actually lowered to around 1100 ℃, but in order to improve the annealing treatment efficiency and effect, the second temperature threshold is still set to 1200 ℃ higher than 1100 ℃ to ensure that the SiC semiconductor sheet can be annealed efficiently and with high quality.
In a second aspect, please refer to fig. 2-6, and fig. 2-6 are semiconductor annealing apparatuses provided in some embodiments of the present application for annealing a SiC semiconductor sheet by using the semiconductor annealing method provided in the first aspect, the semiconductor annealing apparatuses including:
an annealing chamber 1;
the bearing mechanism 2 is fixed in the annealing chamber 1 and used for bearing the SiC semiconductor sheet;
the temperature measuring mechanism 3 is arranged above the bearing mechanism 2 and used for measuring the surface temperature information of the SiC semiconductor sheet;
the microwave heating mechanism 4 is arranged below the bearing mechanism 2 and is used for carrying out microwave heating on the SiC semiconductor sheet;
an electron beam heating mechanism 5, provided above the supporting mechanism 2, for locally heating the surface of the SiC semiconductor sheet by means of electron beams;
and a moving mechanism 6 for switching the electron beam heating mechanism 5 to a local heating position on the surface of the SiC semiconductor sheet to realize movable electron beam heating.
Specifically, the semiconductor annealing apparatus is a hardware device for implementing the semiconductor annealing method provided by the first aspect.
The semiconductor annealing device of the embodiment of the application combines the microwave heating mechanism 4 and the electron beam heating mechanism 5 to perform annealing treatment on the SiC semiconductor sheet by using two heating means of microwave heating and electron beam heating, wherein the temperature required by the annealing treatment of the SiC semiconductor sheet can be reduced to be lower than the melting point temperature of monocrystalline silicon by heating the SiC semiconductor sheet to the first temperature threshold value by using the microwave heating treatment, and the temperature control annealing treatment is accurately performed on the SiC semiconductor sheet by using the electron beam heating with the heating temperature lower than the melting point temperature of monocrystalline silicon, so that the annealing treatment temperature is reduced, the annealing treatment efficiency is improved and the problem of damage to surface elements or a protective layer of the SiC semiconductor sheet is solved under the condition of ensuring the annealing treatment effect.
The SiC semiconductor sheet generally comprises a substrate and a crystal plane above the substrate, and the annealing process is mainly performed on the crystal plane, so in the embodiment of the present application, the semiconductor material is disposed on the supporting mechanism 2 with the crystal plane facing upward, the microwave heating mechanism 4 is used for performing microwave heating on the bottom surface of the SiC semiconductor sheet, so that during the microwave heating process, the heat of the SiC semiconductor sheet is transferred from bottom to top, and the electron beam heating mechanism 5 is disposed above the supporting mechanism 2, and can directly perform the heating process on the crystal plane of the SiC semiconductor sheet, thereby implementing the heating and annealing process with precise temperature control.
In some preferred embodiments, the holding mechanism 2 is a stage for holding the SiC semiconductor sheet, and the bottom thereof has an opening for facilitating microwave heating of the SiC semiconductor sheet by the microwave heating mechanism 4.
In some preferred embodiments, the moving mechanism 6 is used for driving the electron beam heating mechanism 5 to move and/or driving the SiC semiconductor sheet on the holding mechanism 2 to move, so as to switch the local heating position of the electron beam heating mechanism 5 on the surface of the SiC semiconductor sheet to realize mobile electron beam heating.
As shown in fig. 2 and 3, in some preferred embodiments, the moving mechanism 6 includes:
a first rotating assembly 61 which is arranged on the supporting mechanism 2 and is used for driving the SiC semiconductor sheet to rotate;
and a first linear driving assembly 62 connected to the electron beam heating mechanism 5 for driving the electron beam heating mechanism 5 to perform horizontal displacement.
In this embodiment, the first rotating assembly 61 can drive the SiC semiconductor sheet to rotate by a specific angle according to the progress of the annealing process, and in combination with the first linear driving assembly 62 driving the electron beam heating mechanism 5 to move by a specific stroke in the direction perpendicular to the rotation axis of the SiC semiconductor sheet according to the progress of the annealing process, so that the electron beam can impinge on various positions on the surface of the SiC semiconductor sheet, the annealing path running through the surface of the SiC semiconductor sheet can be designed according to the composition of the moving mechanism 6 to ensure that the annealing process can be smoothly completed on the whole SiC semiconductor sheet.
More specifically, in this embodiment, the annealing path may be a spiral path, or may be a path composed of a plurality of concentric circles connected by radial lines, or may be a path composed of a plurality of straight lines radially scattered at the rotation axis of the SiC semiconductor sheet; the annealing path in the present embodiment is preferably a path composed of a plurality of concentric circles connected by radial lines, so that the electron beam heating means 5 can operate simultaneously in cooperation with the first rotating assembly 61 to heat-anneal the SiC semiconductor sheet, i.e., in this embodiment, heat is applied with one annular region as a local heating position.
Preferably, the first rotating assembly 61 may be a general rotation driving device, such as a rotating motor, a rotating cylinder, and the like, and in the embodiment of the present application, as shown in fig. 3, the first rotating assembly 61 preferably includes:
drive gear and driven ring gear, drive gear and the meshing of driven ring gear outside, drive gear is rotated by driving motor (not drawn in the figure) drive, and then can drive driven ring gear rotatory, and driven ring gear sets up on bearing mechanism 2 for it is rotatory that cooperation bearing mechanism 2 comes the bearing and drives the SiC semiconductor sheet.
More preferably, the driven ring gear is provided with a block on the surface, and the SiC semiconductor sheet material is provided with a bayonet matched with the block, so that the SiC semiconductor sheet material can rotate according to the driven ring gear.
Preferably, the first linear driving assembly 62 is an electrically controlled linear driving mechanism, such as an air cylinder, an oil cylinder, a ball screw, an electric linear slide rail, and the like, and in this embodiment, the electric linear slide rail is preferred, which can precisely control the moving position of the electron beam heating mechanism 5, and ensure that the local heating position is accurately adjusted.
More specifically, in this embodiment, when step S2 is executed, first rotating assembly 61 drives SiC semiconductor sheet to rotate continuously, enabling the microwave heating effect to be more uniform, so that the subsequent annealing treatment effect is better.
In other preferred embodiments, as shown in fig. 4, the moving mechanism 6 comprises:
a longitudinal driving assembly 63 connected to the electron beam heating mechanism 5 for driving the electron beam heating mechanism 5 to perform longitudinal horizontal displacement;
and a transverse driving assembly 64 connected with the longitudinal driving assembly 63 for driving the electron beam heating mechanism 5 to perform transverse horizontal displacement.
In this embodiment, the longitudinal driving unit 63 and the lateral driving unit 64 are moved in cooperation to change the horizontal position of the electron beam heating means 5, i.e., to allow the electron beam heating means 5 to be arbitrarily moved in a horizontal plane, and the annealing path across the surface of the SiC semiconductor sheet can be designed according to the composition of the moving means 6 to ensure that the whole SiC semiconductor sheet can smoothly complete the annealing process.
More specifically, in this embodiment, the annealing path may be a spiral path, or may be a path composed of a plurality of concentric circles connected by radial lines, or may be a path composed of a plurality of straight lines radially scattered at the rotation axis of the SiC semiconductor sheet, or may be a serpentine path; the annealing path in the present embodiment is preferably a serpentine path that allows the SiC semiconductor sheet to be fully and sequentially annealed while simplifying the control logic for the longitudinal drive assembly 63 and the lateral drive assembly 64.
Preferably, the longitudinal driving assembly 63 and the transverse driving assembly 64 are electrically controlled linear driving mechanisms, such as air cylinders, oil cylinders, ball screws, electric linear slide rails, and the like, and in the embodiment of the present application, the electric linear slide rails are preferred to precisely control the moving position of the electron beam heating mechanism 5, so as to ensure accurate adjustment of the local heating position.
In other preferred embodiments, as shown in fig. 5, the moving mechanism 6 comprises:
a second rotating assembly 65 mounted on the supporting mechanism 2 and used for driving the SiC semiconductor sheet to rotate;
and a second linear driving assembly 66 connected to the second rotating assembly 65 for driving the second rotating assembly 65 to perform horizontal displacement.
In this embodiment, the second rotating assembly 65 is preferably assembled in conformity with the first rotating assembly 61 and mounted on the movable end of the second linear driving assembly 66, the electron beam heating mechanism 5 is fixed in position, and the embodiment changes the position of the SiC semiconductor sheet relative to the electron beam heating mechanism 5 by the cooperative movement of the second rotating assembly 65 and the second linear driving assembly 66 to realize the switching of the local heating position.
In some preferred embodiments, the thermometric position of the thermometric mechanism 3 is aligned with the local heating position of the electron beam heating mechanism 5.
Specifically, the temperature measuring mechanism 3 is preferably installed on the output end side of the electron beam heating mechanism 5, and the installation angle is determined according to the distance between the SiC semiconductor sheet and the output end of the electron beam heating mechanism 5, so that the temperature measuring position of the temperature measuring mechanism 3 is aligned with the local heating position of the electron beam heating mechanism 5, and further, when step S3 is executed, the surface temperature information can directly reflect the heating progress of the electron beam heating mechanism 5.
In some preferred embodiments, the annealing chamber 1 is a closed chamber during the annealing process, and the chamber is filled with a shielding gas (e.g., argon or nitrogen) to ensure that the annealing process can be performed stably, so that a gas conditioning assembly (not shown) for inputting the shielding gas is connected to the annealing chamber 1.
In some preferred embodiments, as shown in fig. 6, the semiconductor annealing apparatus further includes a loading chamber 7 for storing SiC semiconductor sheets and a loading and unloading robot 8 for transferring SiC semiconductor sheets.
Specifically, the loading chamber 7 communicates with the annealing chamber 1 for storing SiC semiconductor sheets that have not been subjected to annealing treatment and SiC semiconductor sheets that have been subjected to annealing treatment.
More specifically, the loading and unloading robot 8 is used for transferring the SiC semiconductor sheet not subjected to the annealing process in the loading chamber 7 to the holding mechanism 2 for the annealing process, and also for transferring the SiC semiconductor sheet subjected to the annealing process in the holding mechanism 2 to the loading chamber 7 for storage.
More specifically, the device of the embodiment of the present application is provided with the loading cavity 7 and the loading and unloading manipulator 8, so that the large-batch and continuous annealing treatment can be realized.
In some preferred embodiments, the loading chamber 7 is a quartz chamber, and an electric gate valve is disposed at a connection position of the loading chamber 7 and the annealing chamber 1, and when the semiconductor annealing apparatus according to the embodiment of the present invention is used, the loading chamber 7 needs to be vacuumized and filled with a protective gas by using a gas conditioning assembly.
In a third aspect, referring to fig. 7, fig. 7 is a semiconductor annealing system provided in some embodiments of the present application, for annealing a SiC semiconductor sheet, the semiconductor annealing system including the above semiconductor annealing apparatus and a controller 9, the semiconductor annealing apparatus including:
an annealing chamber 1;
the bearing mechanism 2 is fixed in the annealing chamber 1 and used for bearing the SiC semiconductor sheet;
the temperature measuring mechanism 3 is arranged above the bearing mechanism 2 and used for measuring the surface temperature information of the SiC semiconductor sheet;
the microwave heating mechanism 4 is arranged below the bearing mechanism 2 and is used for carrying out microwave heating on the SiC semiconductor sheet;
an electron beam heating mechanism 5, provided above the supporting mechanism 2, for locally heating the surface of the SiC semiconductor sheet by means of electron beams;
a moving mechanism 6 for switching a local heating position of the electron beam heating mechanism 5 on the surface of the SiC semiconductor sheet to achieve electron beam heating with mobility;
the controller 9 is electrically connected with the temperature measuring mechanism 3, the microwave heating mechanism 4, the electron beam heating mechanism 5 and the moving mechanism 6;
the controller 9 is used for acquiring surface temperature information;
the controller 9 is also used for controlling the microwave heating mechanism 4 to perform microwave heating on the SiC semiconductor sheet;
the controller 9 is further configured to control the electron beam heating mechanism 5 and the moving mechanism 6 to cooperatively operate to perform mobile electron beam heating on the SiC semiconductor sheet by using a heating temperature lower than the melting point temperature of the monocrystalline silicon until the SiC semiconductor sheet annealing process is completed when the surface temperature information reaches a preset first temperature threshold value.
The semiconductor annealing system of the embodiment of the application combines the microwave heating mechanism 4 and the electron beam heating mechanism 5 to perform annealing treatment on the SiC semiconductor sheet by using two heating means of microwave heating and electron beam heating, wherein the temperature required by the annealing treatment of the SiC semiconductor sheet can be reduced to be lower than the melting point temperature of monocrystalline silicon by heating the SiC semiconductor sheet to the first temperature threshold value by using the microwave heating treatment, and the accurate temperature control annealing treatment is performed on the SiC semiconductor sheet by using the electron beam heating with the heating temperature lower than the melting point temperature of monocrystalline silicon, so that the annealing treatment temperature can be reduced, the annealing treatment efficiency can be improved under the condition of ensuring the annealing treatment effect, and the problem of damage to surface elements or a protective layer of the SiC semiconductor sheet is solved.
In some preferred embodiments, the process that the temperature measuring position of the temperature measuring mechanism 3 is aligned with the local heating position of the electron beam heating mechanism 5, and the controller 9 controls the electron beam heating mechanism 5 and the moving mechanism 6 to operate cooperatively to perform movable electron beam heating on the SiC semiconductor sheet includes:
controlling an electron beam heating mechanism 5 to locally heat the SiC semiconductor sheet by using electron beams;
and when the surface temperature information reaches a preset second temperature threshold value, controlling the moving mechanism 6 to switch the local heating position of the electron beam according to a preset annealing path.
In some preferred embodiments, the second temperature threshold is 1.5 to 3 times the first temperature threshold.
Example 1
To more clearly illustrate the embodiments of the present application, a semiconductor annealing apparatus shown in fig. 6 is used to perform an annealing process on a SiC semiconductor wafer (hereinafter referred to as SiC wafer) produced by ion implantation of SiC, in the following procedure:
after loading chamber 7 and annealing room 1 and all filling protective gas, utilize last unloading manipulator 8 to remove the SiC piece to bearing mechanism 2 on, first rotation subassembly 61 of controller 9 control and microwave heating mechanism 4 start for the SiC piece lasts and rotates, and utilize microwave heating mechanism 4 to carry out microwave heating to the SiC piece, wherein, microwave heating mechanism 4's microwave frequency is 2.45GHz, and the ion implantation type, the ion implantation degree, the thickness of SiC piece all can influence microwave heating's efficiency.
In the microwave heating process, the infrared probe arranged on one side of the output end of the electron gun is used for measuring the surface temperature of the SiC piece, and when the top surface temperature of the SiC piece rises to 500 ℃ (a preset first temperature threshold value), the controller 9 controls the microwave heating mechanism 4 to reduce the microwave frequency, so that the top surface temperature of the SiC piece is kept near 500 ℃.
The controller 9 controls the electron gun to start to heat the SiC wafer, the first rotating assembly 61 continues to drive the SiC wafer to rotate, wherein the energy density of the electron beam is 0.2-0.4J/cm 2 The beam spot of the electron beam has a radius of 2mm 2 The radius of the focusing coil can be changed according to the use requirement; in this embodiment, the annealing path is a plurality of circular paths coaxial with the rotation axis of the SiC wafer, and the electron gun sequentially performs heating and annealing treatments on the plurality of circular paths from inside to outside, that is, after the heating and annealing treatments on the innermost circular path are completed, the electron gun moves to the next circular path through the first linear driving assembly 62 to perform the heating and annealing treatments on the SiC wafer, and the switching is adjusted so that the temperature of each position of the SiC wafer on the corresponding circular path reaches 1200 ℃ (preset second temperature threshold); when the electron gun completes the heating annealing treatment of the outermost circular route of the SiC wafer, the SiC wafer is wholly completed with the heating annealing treatment, the controller 9 closes the electron gun and the microwave heating mechanism 4, so that the SiC wafer is lowered to a proper temperature, and then the SiC wafer is transferred to the loading cavity 7 by the loading and unloading manipulator 8.
The existing SiC wafer annealing treatment generally needs to heat the SiC wafer to 1600-2000 ℃, the melting point of Si is about 1400 ℃, the surface of the SiC wafer needs to be plated with a film to prevent the Si from volatilizing in the annealing treatment, and the protective layer material begins to be unstable at the temperature higher than 1600 ℃, so that the protective effect on the Si is limited.
In summary, the embodiment of the present application provides a semiconductor annealing method, an annealing apparatus, and an annealing system, wherein the annealing method combines two heating means, namely microwave heating and electron beam heating, to perform annealing treatment on a SiC semiconductor sheet, the temperature required by the annealing treatment of the SiC semiconductor sheet can be reduced to below the melting point temperature of monocrystalline silicon by heating the SiC semiconductor sheet to a first temperature threshold through the microwave heating treatment, and then the temperature-controlled annealing treatment is performed on the SiC semiconductor sheet through the electron beam heating at a heating temperature lower than the melting point temperature of monocrystalline silicon, so that the annealing treatment temperature can be reduced, the annealing treatment efficiency can be improved, and the problem of damage to surface elements or protective layers of the SiC semiconductor sheet can be solved under the condition that the annealing treatment effect is ensured.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus and method may be implemented in other ways.
In addition, units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
Furthermore, the functional modules in the embodiments of the present application may be integrated together to form an independent part, or each module may exist separately, or two or more modules may be integrated to form an independent part.
In this document, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions.
The above description is only an example of the present application and is not intended to limit the scope of the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. A semiconductor annealing method for annealing a SiC semiconductor sheet, characterized by comprising the steps of:
acquiring surface temperature information of the SiC semiconductor sheet;
carrying out microwave heating on the SiC semiconductor sheet;
and when the surface temperature information reaches a preset first temperature threshold value, performing movable electron beam heating on the SiC semiconductor sheet by using a heating temperature lower than the melting point temperature of the monocrystalline silicon until the annealing treatment of the SiC semiconductor sheet is completed.
2. The semiconductor annealing method according to claim 1, wherein a position of the electron beam heating corresponds to a position of the surface temperature information, and the step of performing the electron beam heating with mobility on the SiC semiconductor sheet with a heating temperature lower than a melting point temperature of single-crystal silicon until the SiC semiconductor sheet annealing process is completed includes:
locally heating the SiC semiconductor sheet by using electron beams;
and when the surface temperature information reaches a preset second temperature threshold, switching the local heating position of the electron beam according to a preset annealing path, wherein the second temperature threshold is less than the melting point temperature of the monocrystalline silicon.
3. The semiconductor annealing method according to claim 2, wherein the second temperature threshold is 1.5 to 3 times the first temperature threshold.
4. A semiconductor annealing apparatus for annealing a SiC semiconductor sheet by the semiconductor annealing method according to any one of claims 1 to 3, comprising:
an annealing chamber (1);
the bearing mechanism (2) is fixed in the annealing chamber (1) and used for bearing the SiC semiconductor sheet;
the temperature measuring mechanism (3) is arranged above the bearing mechanism (2) and is used for measuring the surface temperature information of the SiC semiconductor sheet;
the microwave heating mechanism (4) is arranged below the bearing mechanism (2) and is used for carrying out microwave heating on the SiC semiconductor sheet;
an electron beam heating mechanism (5) which is arranged above the bearing mechanism (2) and is used for locally heating the surface of the SiC semiconductor sheet by using electron beams;
a moving mechanism (6) for switching the electron beam heating mechanism (5) to a local heating position on the surface of the SiC semiconductor sheet to achieve mobile electron beam heating.
5. The semiconductor annealing device according to claim 4, wherein the moving mechanism (6) comprises:
a first rotating assembly (61) which is arranged on the bearing mechanism (2) and is used for driving the SiC semiconductor sheet to rotate;
and the first linear driving assembly (62) is connected with the electron beam heating mechanism (5) and is used for driving the electron beam heating mechanism (5) to horizontally displace.
6. The semiconductor annealing device according to claim 4, wherein the moving mechanism (6) comprises:
the longitudinal driving assembly (63) is connected with the electron beam heating mechanism (5) and is used for driving the electron beam heating mechanism (5) to perform longitudinal horizontal displacement;
and the transverse driving assembly (64) is connected with the longitudinal driving assembly (63) and is used for driving the electron beam heating mechanism (5) to transversely and horizontally displace.
7. The semiconductor annealing device according to claim 4, wherein the moving mechanism (6) comprises:
a second rotating assembly (65) which is arranged on the supporting mechanism (2) and is used for driving the SiC semiconductor sheet to rotate;
and the second linear driving assembly (66) is connected with the second rotating assembly (65) and is used for driving the second rotating assembly (65) to horizontally displace.
8. The semiconductor annealing device according to claim 4, wherein a temperature measuring position of the temperature measuring mechanism (3) is aligned with the local heating position of the electron beam heating mechanism (5).
9. The semiconductor annealing device according to claim 4, further comprising a loading chamber (7) for storing the SiC semiconductor sheets and a loading and unloading robot (8) for transferring the SiC semiconductor sheets.
10. A semiconductor annealing system for annealing a SiC semiconductor sheet, characterized by comprising a semiconductor annealing apparatus and a controller (9), the semiconductor annealing apparatus comprising:
an annealing chamber (1);
the bearing mechanism (2) is fixed in the annealing chamber (1) and used for bearing the SiC semiconductor sheet;
the temperature measuring mechanism (3) is arranged above the bearing mechanism (2) and is used for measuring the surface temperature information of the SiC semiconductor sheet;
the microwave heating mechanism (4) is arranged below the bearing mechanism (2) and is used for carrying out microwave heating on the SiC semiconductor sheet;
the electron beam heating mechanism (5) is arranged above the bearing mechanism (2) and is used for locally heating the surface of the SiC semiconductor sheet material by using electron beams;
a moving mechanism (6) for switching the electron beam heating mechanism (5) to a local heating position on the surface of the SiC semiconductor sheet to achieve electron beam heating with mobility;
the controller (9) is electrically connected with the temperature measuring mechanism (3), the microwave heating mechanism (4), the electron beam heating mechanism (5) and the moving mechanism (6);
the controller (9) is used for acquiring the surface temperature information;
the controller (9) is also used for controlling the microwave heating mechanism (4) to perform microwave heating on the SiC semiconductor sheet;
the controller (9) is further used for controlling the electron beam heating mechanism (5) and the moving mechanism (6) to cooperatively operate to perform movable electron beam heating on the SiC semiconductor sheet by using a heating temperature lower than the melting point temperature of monocrystalline silicon until the annealing treatment of the SiC semiconductor sheet is completed when the surface temperature information reaches a preset first temperature threshold value.
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