JPH10189468A - Method and apparatus for manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method and apparatus for manufacturing a semiconductor device for ensuring uniformity of temperature distribution in a wafer surface in the case of conducting RTP treatment. SOLUTION: An RTP treating apparatus eccentrically rotates around its own axis at an eccentric point C2 slightly deviated from a central point C1 at an Si wafer 18 mounted on a wafer holder 16 as a center by horizontally rotating the holder 16 by a rotary driver 24. Thus, in the case of an RTA treatment, the wafer 18 is eccentrically rotated around its own axis to heat-treat while changing a relative position between a plurality of halogen lamps 26 and the wafer 18 as heat sources, and hence ununiformity of the temperature distribution reflected by the shape of the lamps 26 is eliminated, and uniformity of the wafer temperature can be ensured.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing method and a semiconductor manufacturing apparatus, and more particularly to a semiconductor device manufacturing method for performing a rapid thermal process (RTP) (hereinafter referred to as "RTP processing method"). ) And R
The present invention relates to a semiconductor manufacturing apparatus that performs a TP process (hereinafter, referred to as an “RTP processing device”).

[0002]

2. Description of the Related Art In a next-generation semiconductor integrated circuit, miniaturization and integration in the vertical and horizontal directions will become more and more important in the future as the device size is further reduced. The miniaturization in the horizontal direction is achieved by improving a lithography technique for forming a finer pattern and improving a fine processing technique for faithfully processing the fine pattern. On the other hand, miniaturization in the vertical direction does not necessarily show the same development as miniaturization in the horizontal direction. This is because, for example, when processing wiring materials to form wiring resistance, or when processing insulating film materials to form interlayer film capacitors, there is a demand for higher operating speeds of devices and reduction in vertical scaling. Is inconsistent with the requirement.

[0003] However, with respect to the junction depth of the diffusion layer, scaling has been reduced at substantially the same rate in both the horizontal and vertical directions. This is mainly to satisfy the requirement to suppress the short channel effect of the transistor, but in the future, it will be required that the junction depth be further shallow and the resistance of the diffusion layer be small. There will be.

In realizing such a shallow junction, in the case of a technique using an existing batch type diffusion furnace, the limitation due to the restriction of the heat treatment time has come to the surface. Therefore, in recent years, studies have been made on activating impurity ions implanted into the diffusion layer using the RTP processing method. Here, the RTP processing method refers to a technique of heating or cooling a semiconductor wafer (hereinafter, abbreviated as “wafer”) in a short time by irradiating infrared light from a light source such as a lamp. Therefore, this RT
By using the P processing method, the wafer is effectively heated only for a short time, so that a change in the implantation profile of various impurity ions in the diffusion layer can be reduced and a shallow junction can be realized. At the same time, since the activation rate of the impurity ions in the diffusion layer is determined by the maximum heat treatment temperature, the ion activation rate can be kept relatively high, and the resistance of the diffusion layer can be reduced. Similarly, the RTP processing method can be used to reduce the resistance of the gate electrode or the like by heat treatment. From such advantages, it is considered that an RTP processing method is indispensable for fabricating a next-generation fine device.

Hereinafter, RT using a conventional RTP processing apparatus will be described.
The P processing method will be described with reference to FIG. Here, FIG. 6 is a schematic sectional view showing a conventional RTP processing apparatus. For example, at one end of an RTP processing chamber 60 made of a quartz tube, a gas introduction port 62 for introducing a predetermined atmospheric gas into the inside is provided, and at the other end, the gas is exhausted to the outside. Is provided.
Further, in the RTP processing chamber 60, a wafer holder 66 made of, for example, quartz is installed.
A (silicon) wafer 68 is mounted. A guard ring 70 made of, for example, polysilicon or the like is arranged around the Si wafer 68 so as to suppress non-uniformity of the wafer temperature generated between the central portion and the peripheral portion of the Si wafer 68. Has become.

[0006] Further, the RTP processing chamber 60 is vertically sandwiched between
A plurality of halogen lamps 72 as heating sources are arranged at equal intervals. Behind the plurality of halogen lamps 72, a parabolic reflector 74 having a focus on each of the halogen lamps 72 is provided, and a Si wafer mounted on a wafer holder 66 in the RTP processing chamber 60 is provided. The light reflected from the halogen lamp 72 toward the surface 68 is made substantially parallel light.

Next, the RT using the RTP processing apparatus shown in FIG.
The P processing method will be described. First, after starting introduction of the atmospheric gas into the RTP processing chamber 60 from the gas introduction port 62,
A wafer holder 66 on which a Si wafer 68 is mounted is loaded into the RTP processing chamber 60. Next, the switches of the plurality of halogen lamps 72 are turned on (ON), and the Si wafer 68 mounted on the wafer holder 66 in the RTP processing chamber 60 is heated, and the temperature rise is started. At this time, a sharp temperature rise, which is an essential feature of the RTP processing apparatus, is possible due to the strong heat generation of the plurality of halogen lamps 72, so that the wafer temperature rapidly rises from room temperature to a predetermined processing temperature. Then, when the wafer temperature reaches a predetermined processing temperature, a target heat treatment is started. This heat treatment is performed for a desired time as needed.

Next, when the desired processing time has elapsed, the heat treatment is terminated. At the same time, the switches of the plurality of halogen lamps 72 are turned off (OFF), and the cooling of the Si wafer 68 is started. Then, when the wafer temperature reaches the room temperature from the predetermined processing temperature, the temperature lowering of the Si wafer 68 ends. Then, from the RTP processing chamber 60,
After unloading the wafer holder 66 on which the wafer 68 is mounted, the Si wafer 68 subjected to a predetermined heat treatment is placed on the wafer holder 66.
Take out. Then, the introduction of the atmospheric gas flowing into the RTP processing chamber 60 is stopped. Thus, the RTP process is completed.

[0009]

However, the above-described RTP processing method using the conventional RTP processing apparatus involves the following non-uniformity of the temperature distribution in the wafer surface due to some RTP processing apparatuses and the like. There is a problem.

(1) Non-uniformity of temperature distribution reflecting the shape of the lamp As described above, a linear halogen lamp is generally used as a heating source of the RTP processing apparatus. In order to heat the entire wafer evenly, linear halogen lamps are arranged in a strip shape and heating is performed, but the temperature distribution reflecting the shape of the halogen lamps arranged in a strip shape is within the wafer plane. There is also a problem that is observed. Obviously, a parabolic reflector having a focus on the halogen lamp is disposed behind the halogen lamp, and the surface of the wafer is designed to emit substantially parallel lamp light. Has a finite size, making it impossible to completely equalize the lamp light density on the wafer surface. Attempts have also been made to improve the uniformity of the surface temperature of the wafer by devising the arrangement and shape of the halogen lamp. However, even in the case of halogen lamps manufactured simultaneously in the same process, the characteristics are usually slightly different from each other. Therefore, when several halogen lamps are arranged in combination, the wafer temperature is made uniform. There is a problem that it is difficult.
Also, halogen lamps are consumables, and even if the initial characteristics are the same, the deterioration curves are usually slightly different from each other. There is also the problem of worsening.

(2) Non-uniformity of temperature distribution caused by the wafer having a finite size The outer periphery of the wafer is usually in contact with the gas atmosphere at room temperature, and therefore is more easily cooled than the central part. The temperature tends to decrease. The temperature gradient in the wafer surface is likely to be larger at the outer periphery of the wafer, and thus there is a problem that a slip line is generated at the outer periphery of the wafer. In order to solve this problem, a technique has been developed in which a guard ring is arranged on the outer periphery of the wafer to suppress the occurrence of a slip line. However, the installation of this guard ring deteriorates the ability to rapidly control the temperature to increase the heat capacity of the object to be heated. There is also a problem that the amount is increased.

(3) Non-uniformity of temperature distribution due to flow of atmospheric gas As a type of RTP processing, a so-called RTA (Rapid Th
ermal Anneal) treatment and RTO (Rapid Thermal Oxidatio)
n) There are processing and so on. For example, in the case of an RTA process in which a heat treatment for activating impurity ions implanted into a Si substrate or a heat treatment for silicidizing a high melting point metal layer such as Ti (titanium) is performed, N ₂ is usually used. are processed in an inert gas atmosphere such as (nitrogen) and Ar (argon), in the case of RTO process for rapid oxidation, O ₂
The treatment is performed in an oxidizing gas atmosphere containing (oxygen). In any case, the flow of the atmospheric gas is generally determined in a predetermined direction from the inlet to the outlet in many cases. In this case, the cooling effect of the atmospheric gas flowing in this fixed direction causes the flow rate of the atmospheric gas and There is a problem that a temperature difference occurs in the wafer surface depending on the temperature.

The non-uniformity of the temperature distribution in the wafer surface in the RTP process is also supported by experiments performed by the present inventors. For example, the RTA process is performed while changing the temperature of the atmosphere gas, and the sheet resistance of the p ⁺ diffusion layer and the sheet of the gate electrode of the polycide structure in which the WSix (tungsten silicide) layer and the polysilicon layer are laminated on the wafer having a diameter of 8 inches. When the in-plane uniformity of the resistance was evaluated, the distribution was as shown in the graph of FIG.
Both sheet resistances vary depending on the impurity concentration (in the case of the p ⁺ diffusion layer) and the film thickness (in the case of WSix), in addition to the temperature. It is considered that the difference in the temperature depending on the (chip position) causes the distribution of the sheet resistance. In this case, it is not clear how many times the temperature of the measured chip portion in the wafer has risen instantaneously, but in effect, the temperature distribution in the effective chip area of an 8-inch wafer is about 3
A temperature difference of 0 ° C. is observed. FIG. 8 shows a bird's-eye view of the in-plane distribution shape of the sheet resistance of the p ⁺ diffusion layer at this time. From the in-plane distribution shape of the sheet resistance of the p ⁺ diffusion layer, a shape that is clearly considered to be affected by the shape of the linear halogen lamps arranged in parallel is obtained.

Further, according to the literature discussing the temperature distribution in the wafer plane in the RTP process, according to the literature, 8 inch ·
It has been reported that there is a temperature difference of 40 to 50 ° C. in a measured value and a calculation result of a temperature distribution in a wafer surface (Karson L. Knutson, et al., “Modeling of Tree-
Dimensional Effects on Temperature Uniformity in R
apid Thermal Processing of Eight Inch Wafers ", IEEE
TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, VOL.
7, No. 1, Feb. 1994). Therefore, if the non-uniformity of the temperature distribution in the wafer surface in such RTP processing is not improved in the future, the RTP processing method at a lower temperature than the current one, or the use of a larger diameter wafer, the RTP There is a strong possibility that the variation in device characteristics to which the processing method is applied is further increased.

Further, as another problem of the RTP processing method, there is a problem of controlling the temperature drop characteristic of the wafer. That is, in the RTP processing method, for example, by using a halogen lamp having a strong output, it is possible to easily raise the temperature rapidly when the temperature is raised. At present, it is left to natural cooling. In particular, when a guard ring is mounted to improve the in-plane uniformity of the temperature distribution of the wafer, the heat capacity of the entire wafer increases, so that the wafer is not cooled immediately after the halogen lamp is turned off. Therefore, when the temperature of the wafer is lowered, there is a problem that it is difficult to control the heat treatment for an extremely short time. On the other hand, it is conceivable that the wafer is rapidly cooled by flowing a large amount of atmosphere gas at the time of temperature decrease.However, in the case of rapid cooling with a mere large amount of gas flow, the temperature distribution at the time of temperature decrease of the wafer according to the gas flow pattern. A problem of extremely non-uniformity occurs. Therefore, under the circumstances described above, it has begun to be necessary to improve the uniformity of the effective temperature in the wafer surface in the RTP process when fabricating a next-generation micro device.

Incidentally, various proposals have been made to improve the in-plane uniformity of the wafer temperature in such RTP processing. For example, in Japanese Patent Application Laid-Open No. 4-286319, "Halogen lamp and heat treatment furnace", three tungsten wires, each having a different heat generating portion, are sealed in a cylindrical tube of the halogen lamp as a heating source, so that the halogen lamp is heated. Along with adjusting the temperature distribution along the longitudinal direction, a large number of such halogen lamps are arranged in the longitudinal direction of the heat treatment furnace main body so that the longitudinal direction is perpendicular to the longitudinal direction of the heat treatment furnace main body. By doing so, the temperature distribution between the front and rear and right and left of the heat treatment furnace can be easily adjusted, and the temperature distribution in the plane of the wafer inserted into the heat treatment furnace is to be made uniform.

However, as described above, the method of devising a lamp as a heating source as in the present proposal, as described above, has a large manufacturing characteristic variation between lamps and a deterioration curve due to a consumable product. There is a problem that they are different from each other.
In addition to these general problems, the halogen lamp according to the present proposal encloses three tungsten wires in its cylindrical tube, so the temperature control parameters are set each time a new halogen lamp is replaced. Need arises. Moreover, in this case, it is difficult to evaluate whether or not the temperature is really uniform, and it is almost impossible to appropriately cope with a subsequent change with time even if parameters are appropriately set once. Therefore, this proposal has a problem in that there are many parameters for controlling the temperature of the halogen lamp, and it is difficult to control and maintain these parameters.

Further, when actually manufacturing a halogen lamp in which three tungsten wires are sealed in the cylindrical tube, it cannot be ignored that the manufacturing cost increases.
As a result, the manufacturing cost of the RTP processing device also increases.
Therefore, this proposal raises the manufacturing cost of halogen lamps,
As a result, there is a problem that the manufacturing cost of the RTP processing apparatus is increased.

Japanese Patent Application Laid-Open No. 7-326578 discloses a "thin film manufacturing apparatus" which uses, for example, a YAG laser or a halogen lamp or a xenon arc lamp as a heating source for directly heating a local portion of a wafer. By simultaneously rotating the wafer while scanning in the radial direction, the wafer is evenly heated to realize uniform heat distribution with high control accuracy. However, in the currently available heating sources,
Lasers are much more expensive than halogen lamps and the like. For this reason, heating by a laser is generally performed only in applications that cannot be achieved without a laser, for example, in a short-time heating of several milliseconds or in a local heating. Therefore, this proposal has a problem in that, for example, when a laser is used as a heating source, the manufacturing cost of the apparatus is increased.

When a halogen lamp, a xenon arc lamp, or the like is used as a heating source, since the primary light of these lamps travels radially, it is necessary to perform operations such as focusing using a lens and changing the optical path. There is. Each time such an operation is performed, the lamp light is attenuated. Therefore,
This proposal has a problem that when a halogen lamp, a xenon arc lamp, or the like is used as a heating source, for example, the heating efficiency by lamp light is reduced.

The present invention has been made in view of the above circumstances, and provides a method and apparatus for manufacturing a semiconductor device capable of ensuring uniformity of temperature distribution in a wafer surface during RTP processing. The purpose is to provide.

[0022]

The above object is achieved by the following method and apparatus for manufacturing a semiconductor device according to the present invention. That is, a method of manufacturing a semiconductor device according to claim 1 is an RTP processing method, wherein a heat treatment of a wafer is performed in a predetermined atmospheric gas while changing a relative position between a heating source and the wafer. I do. As described above, in the method of manufacturing a semiconductor device according to the first aspect, when performing the RTP process, the shape of the conventional heating source is reduced by performing the heat treatment on the wafer while changing the relative position between the heating source and the wafer. Eliminate the unevenness of the reflected temperature distribution, the unevenness of the temperature distribution caused by the wafer having a finite size, and the unevenness of the temperature distribution caused by the flow of the atmospheric gas, It is possible to ensure uniformity of the temperature distribution.

According to a second aspect of the present invention, in the method of manufacturing a semiconductor device according to the first aspect of the present invention, since the wafer is configured to rotate on its own axis, the heating source and the wafer can be easily connected. Can be changed. By the rotation of the wafer during the RTP process, it is possible to eliminate the non-uniformity of the temperature distribution reflecting the shape of the heating source, and to secure the uniformity of the temperature distribution in the wafer surface.

According to a third aspect of the present invention, in the method of manufacturing a semiconductor device according to the first aspect, since the wafer is configured to revolve, the heating source and the wafer can be easily connected. Can be changed. And, by the revolving of the wafer during this RTP process, it is possible to eliminate the non-uniformity of the temperature distribution, especially due to the finite size of the wafer, and to maintain the uniformity of the temperature distribution in the wafer plane. become.

According to a fourth aspect of the present invention, there is provided a method of manufacturing a semiconductor device according to the first aspect of the present invention, wherein the semiconductor device is configured to revolve while rotating the wafer. The relative position between the wafer and the wafer can be changed, and the degree of change in the relative position increases. The combination of rotation and revolving of the wafer during this RTP process reduces the non-uniformity of the temperature distribution reflecting the shape of the heating source and the non-uniformity of the temperature distribution caused by the wafer having a finite size. Thus, it becomes possible to ensure uniformity of the temperature distribution in the wafer surface.

According to a fifth aspect of the present invention, in the method of manufacturing a semiconductor device according to the second or fourth aspect, the rotation of the wafer is configured to be eccentric rotation of the wafer. Since the degree of change in the relative position between the heating source and the wafer is larger than in the case of simple rotation, the uniformity of the temperature distribution in the wafer surface can be further improved.

According to a sixth aspect of the present invention, in the method of manufacturing a semiconductor device according to the third or fourth aspect, the wafer is configured so that the revolution of the wafer is an eccentric revolution of the wafer. Since the degree of change in the relative position between the heating source and the wafer is larger than in the case of simple revolution, the uniformity of the temperature distribution in the wafer surface can be further improved.

According to a seventh aspect of the present invention, in the method of manufacturing a semiconductor device according to the first aspect of the present invention, the predetermined atmospheric gas is an inert gas. When performing the RTA process among the processes, it is possible to ensure the uniformity of the temperature distribution in the wafer surface.

According to a eighth aspect of the present invention, in the method of manufacturing a semiconductor device according to the first aspect, the predetermined atmospheric gas is an oxidizing gas. When performing the RTO process among the processes, it is possible to ensure the uniformity of the temperature distribution in the wafer surface.

According to a ninth aspect of the present invention, in the method of manufacturing a semiconductor device according to the first aspect, the heat treatment of the wafer includes a temperature lowering process of the wafer, and the temperature or flow rate of the predetermined atmospheric gas is controlled. By adjusting and controlling the temperature lowering rate of the wafer, it is possible to flow a low-temperature atmosphere gas or a large amount of the atmosphere gas to rapidly cool the wafer, for example. Even in this case, since the relative position of the wafer with respect to the gas flow is changed, it is possible to prevent the temperature distribution when the temperature of the wafer is lowered from becoming uneven according to the gas flow pattern. Therefore, when the temperature of the wafer is lowered in a short time, it is possible to maintain uniformity of the temperature distribution in the wafer surface while controlling the cooling rate.

Further, a semiconductor manufacturing apparatus according to a tenth aspect is an RTP processing apparatus, characterized by having means for changing a relative position between a heating source and a wafer in a predetermined atmospheric gas. As described above, in the semiconductor manufacturing apparatus according to the tenth aspect, the means for changing the relative position between the heating source and the wafer is provided.
When performing the P treatment, it is possible to perform the heat treatment of the wafer while changing the relative position between the heating source and the wafer. Therefore, the non-uniformity of the temperature distribution reflecting the shape of the conventional heating source, and the wafer is limited. Temperature distribution non-uniformity due to having a large size, and temperature distribution non-uniformity due to the flow of atmospheric gas, and it is possible to ensure uniform temperature distribution in the wafer plane. Become.

The semiconductor manufacturing apparatus according to the eleventh aspect is configured such that in the semiconductor manufacturing apparatus according to the tenth aspect, the means for changing the relative position between the heating source and the wafer is means for rotating the wafer. This makes it possible to rotate the wafer when performing the RTP process and easily change the relative position between the heating source and the wafer. By the rotation of the wafer during the RTP process, it is possible to eliminate the non-uniformity of the temperature distribution reflecting the shape of the heating source, and to secure the uniformity of the temperature distribution in the wafer surface.

According to a twelfth aspect of the present invention, in the semiconductor manufacturing apparatus of the tenth aspect, the means for changing the relative position between the heating source and the wafer is a means for revolving the wafer. By doing so, it is possible to easily change the relative position between the heating source and the wafer by orbiting the wafer when performing the RTP process. And, by the revolving of the wafer during this RTP process, it is possible to eliminate the non-uniformity of the temperature distribution, especially due to the finite size of the wafer, and to maintain the uniformity of the temperature distribution in the wafer plane. become.

According to a thirteenth aspect of the present invention, in the semiconductor manufacturing apparatus according to the tenth aspect, the means for changing the relative position between the heating source and the wafer is means for revolving the wafer while rotating it. With this configuration, it is possible to easily change the relative position between the heating source and the wafer by rotating and revolving the wafer when performing the RTP process, and at the same time, the degree of the change in the relative position. Becomes larger. The combination of rotation and revolving of the wafer during this RTP process reduces the non-uniformity of the temperature distribution reflecting the shape of the heating source and the non-uniformity of the temperature distribution caused by the wafer having a finite size. Thus, it becomes possible to ensure uniformity of the temperature distribution in the wafer surface.

According to a fourteenth aspect of the present invention, in the semiconductor manufacturing apparatus according to the eleventh or thirteenth aspect, the semiconductor manufacturing apparatus includes means for adjusting a rotation period of the wafer. The rotation speed is adjusted according to the time, so that the uniformity of the temperature distribution in the wafer surface can be ensured throughout the heat treatment.

According to a fifteenth aspect of the present invention, in the semiconductor manufacturing apparatus according to the eleventh or thirteenth aspect, the means for rotating the wafer is a means for eccentrically rotating the wafer. Since the degree of change in the relative position between the heating source and the wafer is larger than in the case of simple rotation, the uniformity of the temperature distribution in the wafer surface can be further improved.

According to a sixteenth aspect of the present invention, there is provided a semiconductor manufacturing apparatus according to the fifteenth aspect, wherein the semiconductor manufacturing apparatus includes means for adjusting the eccentricity of eccentric rotation of the wafer. Since the degree of change in the relative position between the heating source and the wafer can be optimized according to the heat treatment conditions, the uniformity of the temperature distribution in the wafer surface can be further improved.

Further, the semiconductor manufacturing apparatus according to the seventeenth aspect is characterized in that the semiconductor manufacturing apparatus according to the twelfth or thirteenth aspect is provided with means for adjusting a revolution period of the wafer, thereby providing a heat treatment for the wafer. The revolving speed is adjusted according to the time, and the uniformity of the temperature distribution in the wafer surface can be secured throughout the period during which the heat treatment is performed.

The semiconductor manufacturing apparatus according to claim 18 is the semiconductor manufacturing apparatus according to claim 12 or 13, wherein the means for rotating the wafer is a means for eccentrically revolving the wafer. Since the degree of change in the relative position between the heating source and the wafer is larger than in the case of simple revolution, the uniformity of the temperature distribution in the wafer surface can be further improved.

According to a nineteenth aspect of the present invention, there is provided a semiconductor manufacturing apparatus according to the eighteenth aspect, wherein the semiconductor manufacturing apparatus includes means for adjusting the eccentricity of the eccentric revolution of the wafer. Since the degree of change in the relative position between the heating source and the wafer can be optimized according to the heat treatment conditions, the uniformity of the temperature distribution in the wafer surface can be further improved.

According to a twentieth aspect of the present invention, in the semiconductor manufacturing apparatus according to the tenth aspect, the predetermined atmospheric gas is an inert gas. When performing the RTA process, it is possible to ensure uniformity of the temperature distribution in the wafer surface.

According to a twenty-first aspect of the present invention, there is provided a semiconductor manufacturing apparatus according to the tenth aspect, wherein the predetermined atmospheric gas is an oxidizing gas. When performing the RTO process, it is possible to ensure the uniformity of the temperature distribution in the wafer surface.

According to a twenty-second aspect of the present invention, there is provided a semiconductor manufacturing apparatus according to the tenth aspect, further comprising means for adjusting a temperature or a flow rate of a predetermined atmospheric gas. When the temperature is lowered, the temperature or the flow rate of a predetermined atmosphere gas is adjusted, for example, a low-temperature atmosphere gas or a large amount of an atmosphere gas is flown so that the wafer can be rapidly cooled. Since the relative position of the wafer is also changed, it is possible to prevent the temperature distribution when the temperature of the wafer is lowered from becoming uneven according to the gas flow pattern. Therefore, when the temperature of the wafer is lowered in a short time, it is possible to maintain uniformity of the temperature distribution in the wafer surface while controlling the cooling rate.

[0044]

BRIEF DESCRIPTION OF THE DRAWINGS FIG.
An embodiment of the present invention will be described. (First Embodiment) FIG. 1 is a schematic sectional view showing an RTP processing apparatus according to a first embodiment of the present invention, and FIG.
FIG. 3 is a plan view showing a wafer and the like loaded in the P processing apparatus, FIG.
FIG. 2 is a diagram showing a time chart of an RTA process using the RTP processing device of FIG. 1. As shown in FIG. 1, one end of an RTP processing chamber 10 made of, for example, a quartz tube has a gas inlet 12 for introducing a predetermined atmospheric gas into the inside thereof.
The other end is provided with a gas discharge portion 14 for discharging the atmospheric gas to the outside. In addition,
Although not shown, a gas flow control unit that adjusts the flow rate of the atmospheric gas introduced into the RTP processing chamber 10 from the gas inlet 12 is provided in front of the gas inlet 12.

A wafer holder 16 made of, for example, quartz is installed in the RTP processing chamber 10, and an Si wafer 18, for example, is mounted thereon.
Further, a guard ring 20 made of, for example, polysilicon or the like is arranged around the Si wafer 18 so as to suppress non-uniformity of the wafer temperature generated between the central portion and the peripheral portion of the Si wafer 18. ing.

[0046] Further, the wafer holder 16 is connected to a rotary drive unit 24 via the rotation transmission portion 22, about an axis of rotation L ₁ shown by a broken line with horizontally rotated in the figure by the rotary drive unit 24, the rotation The speed is controlled. The rotation axis L ₁ of the horizontal rotation of the wafer holder 16, as shown in FIG. 2, wafer holder 16
Rather than through the center point C ₁ of Si wafer 18 above,
For example, it passes through an eccentric point C ₂ slightly deviated to the opposite side of the orientation flat of the Si wafer 18. Therefore, with the horizontal rotation of the wafer holder 16, Si wafer 18 mounted on the wafer holder 16 will be eccentrically rotates around the eccentric point C _2.

Further, the RTP processing chamber 10 is vertically sandwiched between
For example, a plurality of linear halogen lamps 26 are arranged as strips at equal intervals as a heating source. Behind the plurality of halogen lamps 26, a reflector 28 having a parabolic shape with each halogen lamp 26 as a focal point is provided.
Is installed, and the wafer holder 1 in the RTP processing chamber 10 is installed.
The reflected light of the halogen lamp 26 toward the surface of the Si wafer 18 mounted on the surface 6 is made substantially parallel light. Note that, instead of the halogen lamp 26, for example, a xenon lamp or the like may be used as a heating source.

Next, the RT using the RTP processing apparatus shown in FIG.
The processing method A will be described along the time axis t in the time chart of FIG. (1) Start of Introducing Atmospheric Gas (Time t ₁ ) The introduction of, for example, Ar gas as an atmospheric gas from the gas inlet 12 into the RTP processing chamber 10 is started. At this time, A
The flow rate of the r gas is, for example, 0.5 slm, and the temperature is room temperature. Note that, instead of the Ar gas, an inert gas such as a He gas or a N ₂ gas may be used as the atmosphere gas.

(2) Loading of Wafer (Time t ₂ ) After the Si wafer 18 is mounted on the wafer holder 16, the wafer holder 66 on which the Si wafer 18 is mounted is mounted.
Is loaded into the RTP processing chamber 10. In the normal case, it is not necessary to fix the Si wafer 18 on the wafer holder 16. However, when it is necessary to fix the Si wafer 18 on the wafer holder 16 because the rotation speed of the Si wafer 18 becomes high, a vacuum chuck is used when performing the RTA process under substantially atmospheric pressure. When the RTA process is performed under reduced pressure, it may be fixed using an electrostatic chuck.

(3) Start of Wafer Rotation (Time t ₃ ) The rotation holder 24 horizontally rotates the wafer holder 16 via the rotation transmitter 22. Rotation axis L ₁ of the horizontal rotation of the wafer holder 16, since the through eccentric point C ₂ which is slightly offset rather than the center point C ₁ of Si wafer 18, with the horizontal rotation of the wafer holder 16, S
i wafer 18 starts an eccentric rotation around the eccentric point C _2. At this time, the rotation speed of the Si wafer 18 is, for example, about 60 rpm, that is, a speed of about one revolution per second.

(4) Start of temperature rise of wafer (time t ₄ ) A plurality of halogen lamps 26 are turned on,
The Si wafer 18 mounted on the wafer holder 16 in the RTP processing chamber 10 is heated and its temperature is started. At this time, a sharp temperature rise, which is an essential feature of the RTP processing apparatus, is possible due to the strong heat generated by the high-power halogen lamp 26. Therefore, the wafer temperature rapidly rises from room temperature to a predetermined processing temperature.

(5) Start of heat treatment (time t ₅ ) At the stage when the wafer temperature reaches a predetermined treatment temperature, the target heat treatment is started. This heat treatment may be performed for a desired time if necessary.
It is about 0 seconds.

(6) Termination of heat treatment (time t ₆ ) When a desired treatment time has elapsed, the heat treatment is terminated.
At the same time, the switches of the plurality of halogen lamps 26 are turned off, and the cooling of the Si wafer 18 is started. At this time,
The RTP processing chamber 10 is controlled by a gas flow controller (not shown).
The flow rate of Ar gas flowing into the
m to, for example, 5 slm,
Accelerate the cooling rate of 8.

(7) Completion of temperature drop of wafer (time t ₇ ) A large amount of Ar whose flow rate was increased from 0.5 slm to 5 slm
Due to the gas flow, the wafer temperature rapidly drops from a predetermined processing temperature, and when the temperature reaches room temperature, the temperature drop of the Si wafer 18 ends.

(8) End of wafer rotation (time t ₈ ) The horizontal rotation of the wafer holder 16 by the rotation drive unit 24 is stopped, and the eccentric rotation of the Si wafer 18 is stopped.
At the same time, the flow rate of the Ar gas flowing in the RTP processing chamber 10 is reduced from 5 slm at the time of temperature decrease to the original 0.5 slm.

(9) Removal of Wafer (Time t ₉ ) After unloading the wafer holder 16 on which the Si wafer 18 is mounted from the RTP processing chamber 10, a predetermined heat treatment is performed on the wafer holder 16 from above the wafer holder 16.
The wafer 18 is taken out.

(10) Atmospheric gas introduction stop (time t ₁₀ ) Ar gas flowing into the RTP processing chamber 10 is stopped from being introduced. Thus, the RTA process is completed.

As described above, according to the present embodiment, the RTP
The processing apparatus is provided with a rotation drive unit 24 for horizontally rotating the wafer holder 16 via the rotation transmission unit 22, and the rotation drive unit 24 mounts the wafer holder 16 on the wafer holder 16 with the horizontal rotation of the wafer holder 16. S
By being configured to i wafer 18 from the center point C ₁ so as to eccentrically rotate around the eccentric point C ₂ a slightly displaced, during the RTA treatment, Si wafer 18
Can be heat-treated while changing the relative position between the plurality of halogen lamps 26 serving as a heating source and the Si wafer 18 by rotating the eccentric body at a rotation speed of about 60 rpm, for example. The non-uniformity of the temperature distribution reflecting the shape of the heating source in which the halogen lamps 26 are arranged in a strip shape can be eliminated, and the in-plane uniformity of the wafer temperature can be secured. Further, even when a specific halogen lamp among the plurality of halogen lamps 26 has a slightly different characteristic from other halogen lamps, it also has a different deterioration curve and a different degree of deterioration. Also in this case, it is possible to suppress the deterioration of the uniformity of the temperature distribution caused by the difference between the plurality of halogen lamps 26.

Since the rotation speed of the rotation drive unit 24 can be controlled to control the rotation speed of the Si wafer 18, the Si wafer 18 can be controlled in accordance with the length of the heat treatment period.
By adjusting the rotation speed, even if the processing period needs to be changed, the in-plane uniformity of the wafer temperature can be maintained throughout the processing period.

In the heat treatment, even if Ar gas at a flow rate of, for example, 0.5 slm is flowed from the gas inlet port 12 toward the gas discharge section 14 as an atmosphere gas,
The eccentric rotation of the wafer 18 makes it possible to change the relative position of the Si wafer 18 with respect to the flow of the Ar gas in a certain direction, so that the temperature distribution due to the flow of the Ar gas as the atmosphere gas is reduced. It is possible to eliminate the non-uniformity and secure the in-plane uniformity of the wafer temperature.

Further, when cooling the Si wafer 18 after the heat treatment, the flow rate of the Ar gas flowing into the RTP processing chamber 10 by the gas flow rate control unit is set to 0.5 slm to 5 slm.
m, so that the wafer temperature can be rapidly cooled from a predetermined processing temperature to room temperature. Even when the Si wafer 18 is rapidly cooled by such a large amount of Ar flow, S
By changing the relative position of the Si wafer 18 with respect to the flow of Ar gas by the eccentric rotation of the i-wafer 18, it is possible to eliminate the non-uniformity of the temperature distribution caused by the flow of a large amount of Ar gas. The uniformity of the temperature distribution in the plane can be ensured. This means that by adjusting the flow rate of the Ar gas by the gas flow rate control unit, it is possible to control the temperature drop rate of the Si wafer 18 while ensuring uniformity of the temperature distribution in the wafer surface. doing.

In the first embodiment, when the temperature of the Si wafer 18 after the heat treatment is lowered, the temperature of A
Increase the flow rate of r gas from 0.5 slm to 5 slm and
Even when the i-wafer 18 is rapidly cooled, it has been described that uniformity of the temperature distribution in the wafer surface can be secured. However, not only the method of rapidly cooling the Si wafer 18 by simply flowing a large amount of atmospheric gas, It is also possible to employ a technique of rapidly cooling the Si wafer 18 by flowing a cooled atmosphere gas. That is, the gas inlet 1
A gas temperature control unit for adjusting the temperature of the atmospheric gas introduced into the RTP processing chamber 10 is installed at the previous stage of Step 2, and when the heat treatment is completed (time t ₆ ), the gas temperature control unit lowers the temperature to below the room temperature. The cooled Ar gas is supplied to the RTP processing chamber 10.
Let it flow inside. Thus, even when the wafer temperature is rapidly cooled from a predetermined processing temperature to room temperature by flowing the Ar gas cooled to a temperature lower than room temperature, the relative position of the Si wafer 18 with respect to the flow of the Ar gas due to the eccentric rotation of the Si wafer 18 By changing
Since the non-uniformity of the temperature distribution due to the flow of the cooled Ar gas can be eliminated, the uniformity of the temperature distribution in the wafer surface can be ensured. This means that by adjusting the temperature of the Ar gas by the gas temperature control unit, it is possible to control the temperature drop rate of the Si wafer 18 while ensuring uniformity of the temperature distribution in the wafer surface. doing.

Further, it is also possible to employ a method of combining the above two methods and rapidly cooling the Si wafer 18 by flowing a large amount of cooled atmosphere gas. That is, at the time when the heat treatment is completed (time t ₆ ), the Ar gas is cooled to a temperature lower than room temperature by the gas temperature controller, and the flow rate of the cooled Ar gas is increased by the gas flow controller, so that the wafer temperature is increased. Can be rapidly cooled from a predetermined processing temperature to room temperature. Even when the Si wafer 18 is rapidly cooled by such a large amount of cooled Ar flow, the relative position of the Si wafer 18 with respect to the flow of the Ar gas is changed by the eccentric rotation of the Si wafer 18, so that the large amount of cooled Ar gas flows. This makes it possible to eliminate the non-uniformity of the temperature distribution caused by the above, so that the uniformity of the temperature distribution in the wafer surface can be ensured.

In the first embodiment, the Si wafer 18 mounted thereon with the horizontal rotation of the wafer holder 16 is centered on the eccentric point C ₂ slightly displaced from the center point C _1. Although the eccentric rotation is configured, the center axis L ₁ of the horizontal rotation of the wafer holder 16 passes through the center point C ₁ of the Si wafer 18, and the mere rotation about the center point C ₁ of the Si wafer 18 is performed. May be performed. In this case, as compared with the eccentric rotation, the degree of change in the relative position between the heating source and the wafer is limited, but it is possible to achieve the effect of securing the uniformity of the temperature distribution in the wafer surface.

On the contrary, an eccentricity adjusting portion for adjusting the eccentricity of the eccentric rotation of the Si wafer 18 is provided, and the eccentricity adjusting portion adjusts the relative position between the heating source and the wafer according to other heat treatment conditions. Si so that the degree of position change is optimal
The eccentricity of the eccentric rotation of the wafer 18 may be controlled. In this case, by optimizing the degree of change in the relative position between the heating source and the wafer, it is possible to further improve the uniformity of the temperature distribution in the wafer surface.

(Second Embodiment) FIG. 4 is a schematic sectional view showing an RTP processing apparatus according to a second embodiment of the present invention, and FIG.
FIG. 5 is a plan view showing a wafer and the like loaded in the RTP processing apparatus of FIG. For example, a gas introduction pipe 32 is provided in an upper portion of the RTP processing chamber 30 including a quartz chamber. The gas inlet pipe 32 is provided with a shower section 34 having a large number of holes opened downward.
The predetermined atmospheric gas introduced from Step 6 is passed through a large number of holes through RT.
It blows out downward into the P processing chamber 30.
Further, the lower end of the RTP processing chamber 30 is provided with an RTP processing chamber 3.
Gas exhaust unit 3 for exhausting the atmospheric gas inside 0 to the outside
8 are provided. Although not shown, a gas flow controller that adjusts the flow rate of the atmospheric gas introduced into the RTP processing chamber 30 is provided at a stage preceding the gas inlet 36.

[0067] Further, the RTP processing chamber 30 are installed rotating support base 40 is adapted to horizontally rotate about the rotational axis L ₂ passing through the center. A rotation drive unit 42 is mounted on the rotation support table 40 at a position slightly deviated from the rotation axis L ₂ , and the rotation drive unit 42 causes the disk 46 to move through the rotation transmission unit 44 to its center. Point C ₃
With horizontally rotating around the rotation axis L ₃ through, so as to control the rotational speed.

Further, four wafer holders 48 are arranged at regular intervals along the outer periphery of the disk 46, and a Si wafer 50 is mounted on each of the wafer holders 48. And the wafer holder 4
8 mounted on the gas introduction pipe 32
Is located below the shower section 34. A gear 52 is provided under each wafer holder 48.
There is adhered, with the rotation of the gear 52, so as to horizontally rotate about the rotational axis L ₄ of the wafer holder 48 through its center point C _4.

The outer peripheral surface of the disk 46 is engraved with the same pitch as the pitch of the gear 52, so that the gear 52 revolves around its outer periphery while rotating as the disk 46 rotates. . That is, the disk 46 and the four gears 52 are a so-called differential gear mechanism.
ng), a planetary gearing is constituted, wherein the disk 46 corresponds to a so-called sun gear, and the four gears 52 correspond to a so-called planetary gear. Therefore, the disk 46 by the rotation of the rotary drive unit 42 when the horizontal rotating about the axis of rotation L _3, the gear 52 along the outer periphery of the disc 46, i.e., wafer holder 48 rotate and revolve. The rotation driving unit 42 itself, horizontally rotated about the rotation axis L ₂ by the rotation of the rotating support base 40. Then, these rotational movements are combined, and the Si wafer 50 loaded on the wafer holder 48 revolves eccentrically while rotating.

On the RTP processing chamber 30, a plurality of, for example, linear halogen lamps 54 are arranged in a strip shape at equal intervals. Behind the plurality of halogen lamps 54, a reflector 56 having a parabolic shape focusing on each of the halogen lamps 54 is provided, and a Si plate mounted on the wafer holder 48 in the RTP processing chamber 30 is provided.
The reflected light of the halogen lamp 54 is made substantially parallel light toward the surface of the wafer 50.

Next, the RT using the RTP processing apparatus shown in FIG.
The processing method A will be described. Since the processing method is substantially the same as that of the first embodiment described along the time axis t in the time chart of FIG. 3, the description of the common points is simplified, and only the different points are emphasized. Will be explained. The steps of (1) starting the introduction of the atmospheric gas and (2) loading the wafer are performed in substantially the same manner as in the first embodiment. In this case, the flow rate of the Ar gas as the atmospheric gas is appropriately set in consideration of the size of the RTP processing chamber 30 and the like. Further, as in the case of the first embodiment, an inert gas such as He gas or N ₂ gas may be used as the atmospheric gas instead of the Ar gas.

Next, instead of (3) the step of starting the rotation of the wafer in the case of the first embodiment,
(3) Perform the step of starting the wafer revolution. That is,
About the axis of rotation L ₂ the rotary drive unit 42 by the rotation of the rotating support base 40 with horizontally rotating, the rotation driving unit 4
The disc 46 is horizontally rotated around the rotation axis L ₃ by the rotation of 2 itself, revolving while rotating four wafer holder 48 along the outer periphery of the disc 46. Thus,
Si wafer 50 loaded on wafer holder 48
The is eccentrically revolve around the rotation axis L ₂ while rotating around the rotation axis L ₄ passing through the center point C _4. In this case, the rotation speeds of the rotation support table 40 and the rotation drive unit 42 are as follows:
The temperature is appropriately set within a range where in-plane uniformity of the wafer temperature can be ensured.

Next, (4) the temperature rise of the wafer is started,
The steps of (5) starting the heat treatment, (6) terminating the heat treatment, and (7) terminating the temperature drop of the wafer are performed in substantially the same manner as in the first embodiment. The processing temperature and the processing time are appropriately set according to the processing purpose, and the amount of the Ar gas at the time of cooling is appropriately set within a range where in-plane uniformity of the wafer temperature can be ensured. Next, instead of the step (8) of terminating the rotation of the wafer in the case of the first embodiment, the step (8) of terminating the rotation of the wafer is performed. That is, the rotation of the rotation support table 40 and the rotation of the rotation drive unit 42 are stopped, and the rotation and eccentric rotation of the Si wafer 50 are stopped. Next, the steps of (9) taking out the wafer and (10) stopping the introduction of the atmospheric gas are performed in substantially the same manner as in the case of the first embodiment.

As described above, according to the present embodiment, the RTP
The processing apparatus is connected to the wafer holder 48 through a planetary gear mechanism including a disk 46 and four gears 52 by rotating the rotation axis L _3.
It is about to be rotating support base 40 for horizontally rotating the rotary drive unit 42 and the rotation drive unit 42 about the rotational axis L ₂ is revolving installation of, while rotating the Si wafer 50 mounted on the wafer holder 48 eccentric By being configured to revolve, during the RTA process, the Si wafer 50 is eccentrically revolved while rotating, thereby changing the relative position between the plurality of halogen lamps 54 as a heating source and the Si wafer 50. For example, a plurality of linear halogen lamps 5
4 eliminates the non-uniformity of the temperature distribution reflecting the shape of the heating source arranged in the shape of a strip, etc., and can ensure the in-plane uniformity of the wafer temperature. Further, even when a specific halogen lamp among the plurality of halogen lamps 54 has a slightly different characteristic from the other halogen lamps, it also has a different deterioration curve and a different degree of deterioration. Also in this case, it is possible to suppress the deterioration of the uniformity of the temperature distribution due to the difference between the plurality of halogen lamps 54.

Further, at the time of the RTA process, the Si wafer 5
0, the heat treatment can be performed while changing the relative position between the plurality of halogen lamps 54 as a heating source and the Si wafer 50, so that the temperature of the central portion and the outer peripheral portion of the Si wafer 50 can be increased. The difference can be eliminated, and in-plane uniformity of the wafer temperature can be ensured. Therefore, compared with the case where only the eccentric rotation of the wafer 16 of the first embodiment is performed, the in-plane uniformity of the wafer temperature can be further improved by adding the revolving motion.

The rotation support table 40 and the rotation drive section 42
By controlling the rotation speed of the Si wafer 50, it is possible to control the speed of the rotation and eccentric revolution of the Si wafer 50,
By adjusting the speed of rotation and eccentric revolution of the Si wafer 18 according to the length of the heat treatment period, even when the processing period needs to be changed, the wafer temperature is uniform throughout the processing period. Sex can be maintained.

Further, when performing the heat treatment or cooling after the heat treatment, it is possible to eliminate the non-uniformity of the temperature distribution caused by the flow of the Ar gas as the atmospheric gas and to secure the in-plane uniformity of the wafer temperature. Although it is required, in addition to changing the relative position of the Si wafer 50 with respect to the flow of the Ar gas by rotating the Si wafer 50 eccentrically while rotating, the Ar gas is also supplied to the Si wafer below the shower portion 34 of the gas introduction pipe 32. Since the gas is blown out almost evenly on the surface of 50, the gas flow rate control unit increases the Ar gas flow rate,
Separately install gas temperature control unit to maintain temperature below room temperature
Even when the r gas is cooled, in-plane uniformity of the wafer temperature can be easily ensured. This is because, as in the case of the first embodiment, the flow rate of the Ar gas is adjusted by the gas flow rate control unit, or the Ar gas temperature is reduced by the gas temperature control unit, so that the Ar gas temperature is reduced. This means that the temperature reduction rate of the Si wafer 50 can be controlled while ensuring the uniformity of the temperature distribution.

In the second embodiment, the rotation of the rotation drive unit 42 by the rotation of the rotation support
₂ around is horizontally rotated, by revolving the wafer holder 48 around the rotation axis L ₃ through the planetary gear mechanism consisting of a disc 46 and four gears 52 by the rotation of the rotary drive unit 42, Si wafer 50 Is configured to rotate eccentrically while rotating.
0 Match the the rotation axis L ₂ and the rotation axis L ₃ of the rotary drive unit 42, may be a Si wafer 50 is simply rotate and revolve. In this case, the degree of change in the relative position between the heating source and the wafer is limited as compared with the case of eccentric orbiting while rotating, but the effect of securing uniformity of the temperature distribution in the wafer plane is not exhibited. It is possible. Conversely, an eccentricity adjustment unit for adjusting the eccentricity of the eccentric revolution of the Si wafer 50 is installed, and the eccentricity adjustment unit changes the relative position between the heating source and the wafer according to other heat treatment conditions. The eccentricity of the eccentric revolution of the Si wafer 18 may be controlled so that the degree of the eccentricity becomes optimum. in this case,
By optimizing the degree of change in the relative position between the heating source and the wafer, it is possible to further improve the uniformity of the temperature distribution in the wafer surface.

In the second embodiment, the rotation of the gear 52 adhered under each wafer holder 48 causes the Si wafer 50 mounted on the wafer holder 48 to rotate through the center point C ₄ of the rotation axis. Although are configured to rotate around the L _4, the as in the first embodiment, about the eccentric point slightly offset the Si wafer 50 on the wafer holder 48 from the center point C ₄ The Si wafer 50 may be configured to be eccentrically rotated while being eccentrically rotated. In this case, the degree of change in the relative position between the heating source and the wafer is further increased, and the uniformity of the temperature distribution in the wafer surface can be further improved.

In the first and second embodiments, the case where the RTA processing is performed using the RTP processing apparatus is described. However, the present invention is not limited to the RTA processing. The present invention can be applied to the case where the RTO process is performed using the RTO process. This R
When performing the TO treatment, an oxidizing gas containing O ₂ may be used as the atmosphere gas instead of the Ar gas used in the first and second embodiments.

[0081]

As described above, according to the semiconductor device and the method of manufacturing the same of the present invention, the following effects can be obtained. That is, according to the method of manufacturing a semiconductor device according to the first aspect, the shape of the conventional heat source is reflected by performing the heat treatment on the wafer while changing the relative position between the heat source and the wafer when performing the RTP process. Temperature unevenness caused by the wafer having a finite size, and unevenness of the temperature distribution caused by the flow of the atmosphere gas, and the temperature in the wafer surface is eliminated. Uniformity of distribution can be ensured. Therefore, it is possible to suppress the non-uniformity of device characteristics due to the non-uniformity of the temperature distribution in the wafer surface when performing the RTP process. Sufficient characteristics can be secured.

According to the method of manufacturing a semiconductor device of the second aspect, in the method of manufacturing a semiconductor device of the first aspect, the relative position between the heating source and the wafer is easily changed by rotating the wafer. Thereby, the non-uniformity of the temperature distribution reflecting the shape of the heating source can be eliminated, and the uniformity of the temperature distribution in the wafer surface can be ensured.

According to the method of manufacturing a semiconductor device of the third aspect, in the method of manufacturing a semiconductor device of the first aspect, the relative position between the heating source and the wafer is easily changed by revolving the wafer. Thereby, it is possible to eliminate the non-uniformity of the temperature distribution particularly caused by the wafer having a finite size, and to ensure the uniformity of the temperature distribution in the wafer surface.

According to the method of manufacturing a semiconductor device of the fourth aspect, in the method of manufacturing a semiconductor device of the first aspect, the relative position between the heating source and the wafer can be easily adjusted by rotating the wafer while rotating. And by increasing the degree of change in the relative position, the non-uniformity of the temperature distribution due to the shape of the heating source and the non-uniformity of the temperature distribution due to the finite size of the wafer. And the uniformity of the temperature distribution in the wafer surface can be ensured.

According to the method of manufacturing a semiconductor device according to the fifth aspect, in the method of manufacturing a semiconductor device according to the second or fourth aspect, the rotation of the wafer is replaced by the eccentric rotation of the wafer. Since the degree of change in the relative position between the heating source and the wafer is greater than in the case, the uniformity of the temperature distribution in the wafer surface can be further improved.

According to the method of manufacturing a semiconductor device of the sixth aspect, in the method of manufacturing a semiconductor device of the third or fourth aspect, the orbit of the wafer is set to the eccentric orbit of the wafer. Since the degree of change in the relative position between the heating source and the wafer is greater than in the case, the uniformity of the temperature distribution in the wafer surface can be further improved.

According to the method of manufacturing a semiconductor device of the seventh aspect, in the method of manufacturing a semiconductor device of the first aspect, the predetermined atmospheric gas is an inert gas, thereby enabling the RTP process to be performed. When performing the RTA process, uniformity of the temperature distribution in the wafer surface can be ensured.

According to the method of manufacturing a semiconductor device of the eighth aspect, in the method of manufacturing a semiconductor device of the first aspect, the predetermined atmospheric gas is an oxidizing gas, so that the method of the RTP processing can be performed. When performing the RTO process, uniformity of the temperature distribution in the wafer surface can be ensured.

Further, according to the method of manufacturing a semiconductor device of the ninth aspect, in the method of manufacturing a semiconductor device of the first aspect, the temperature or flow rate of the predetermined atmospheric gas is adjusted to control the temperature drop rate of the wafer. Therefore, even if the wafer is rapidly cooled by flowing a low-temperature atmosphere gas or a large amount of atmosphere gas, for example, the relative position of the wafer with respect to such a gas flow is changed, and the temperature distribution when the temperature of the wafer is lowered is reduced by the gas flow. Since it is possible to prevent non-uniformity according to the pattern of the wafer, it is necessary to control the cooling rate and maintain uniformity of the temperature distribution in the wafer plane even when the temperature of the wafer is lowered in a short time. Can be.

Furthermore, according to the semiconductor manufacturing apparatus of the tenth aspect, since the means for changing the relative position between the heating source and the wafer is provided, when performing the RTP process, the heating source and the wafer are not connected to each other. Since the heat treatment of the wafer can be performed while changing the relative position, the non-uniformity of the temperature distribution reflecting the shape of the conventional heating source, and the non-uniformity of the temperature distribution due to the finite size of the wafer. The uniformity and the non-uniformity of the temperature distribution caused by the flow of the atmosphere gas can be eliminated, and the uniformity of the temperature distribution in the wafer surface can be ensured. Therefore, it is possible to suppress the non-uniformity of device characteristics due to the non-uniformity of the temperature distribution in the wafer surface when performing the RTP process. Sufficient characteristics can be secured.

According to the semiconductor manufacturing apparatus of the eleventh aspect, in the semiconductor manufacturing apparatus of the tenth aspect, means for rotating the wafer is used as means for changing the relative position between the heating source and the wafer. , R
Since it is possible to easily change the relative position between the heating source and the wafer by rotating the wafer when performing the TP processing, it is possible to eliminate the non-uniformity of the temperature distribution reflecting the shape of the heating source in particular, The uniformity of the temperature distribution in the plane can be ensured.

According to a twelfth aspect of the present invention, in the semiconductor manufacturing apparatus of the tenth aspect, means for revolving the wafer is used as means for changing the relative position between the heating source and the wafer. , R
Non-uniformity of the temperature distribution due to the finite size of the wafer, because the relative position between the heating source and the wafer can be easily changed by revolving the wafer during TP processing And the uniformity of the temperature distribution in the wafer surface can be ensured.

[0093] According to the semiconductor manufacturing apparatus of the thirteenth aspect, in the semiconductor manufacturing apparatus of the tenth aspect, the means for rotating the wafer while revolving as a means for changing the relative position between the heating source and the wafer is provided. By using, the relative position between the heating source and the wafer can be easily changed by revolving while rotating the wafer when performing the RTP process, and the degree of change in the relative position increases, In particular, to eliminate the non-uniformity of the temperature distribution reflecting the shape of the heating source and the non-uniformity of the temperature distribution caused by the wafer having a finite size, and to ensure the uniformity of the temperature distribution in the wafer plane. Can be.

According to the semiconductor manufacturing apparatus of the fourteenth aspect, in the semiconductor manufacturing apparatus of the eleventh or thirteenth aspect, the semiconductor manufacturing apparatus includes a means for adjusting a rotation cycle of the wafer. Since the rotation speed can be adjusted, the uniformity of the temperature distribution in the wafer surface can be ensured throughout the heat treatment.

According to the semiconductor manufacturing apparatus of the present invention, the means for rotating the wafer is replaced by the means for rotating the wafer in an eccentric manner. Since the degree of change in the relative position between the heating source and the wafer is greater than in the case, the uniformity of the temperature distribution in the wafer surface can be further improved.

According to the semiconductor manufacturing apparatus of the present invention, the means for adjusting the eccentricity of the eccentric rotation of the wafer is provided in the semiconductor manufacturing apparatus of the present invention, so that it can be adapted to other heat treatment conditions. As a result, the degree of change in the relative position between the heating source and the wafer can be optimized, so that the uniformity of the temperature distribution in the wafer surface can be further improved.

According to the semiconductor manufacturing apparatus of the present invention, in the semiconductor manufacturing apparatus of the twelfth or thirteenth aspect, a means for adjusting the revolving cycle of the wafer is provided, according to the heat treatment time of the wafer. Since the revolution speed can be adjusted, uniformity of the temperature distribution in the wafer surface can be ensured throughout the period in which the heat treatment is performed.

According to the semiconductor manufacturing apparatus of the eighteenth aspect, in the semiconductor manufacturing apparatus of the twelfth or thirteenth aspect, the means for rotating the wafer is replaced by the means for eccentrically revolving the wafer. Since the degree of change in the relative position between the heating source and the wafer is greater than in the case, the uniformity of the temperature distribution in the wafer surface can be further improved.

Further, according to the semiconductor manufacturing apparatus of the nineteenth aspect, the semiconductor manufacturing apparatus of the eighteenth aspect has means for adjusting the eccentricity of the eccentric revolution of the wafer, so that it can be adapted to other heat treatment conditions. As a result, the degree of change in the relative position between the heating source and the wafer can be optimized, so that the uniformity of the temperature distribution in the wafer surface can be further improved.

According to the semiconductor manufacturing apparatus of the twentieth aspect, in the semiconductor manufacturing apparatus of the tenth aspect, the predetermined atmospheric gas is an inert gas.
When performing the RTA process of the RTP process, uniformity of the temperature distribution in the wafer surface can be ensured.

According to the semiconductor manufacturing apparatus of the twenty-first aspect, in the semiconductor manufacturing apparatus of the tenth aspect, the predetermined atmospheric gas is an oxidizing gas.
When performing the RTO process of the RTP process, uniformity of the temperature distribution in the wafer surface can be ensured.

According to the semiconductor manufacturing apparatus of the present invention, the means for adjusting the temperature or the flow rate of the predetermined atmospheric gas is provided in the semiconductor manufacturing apparatus of the tenth aspect, so that the predetermined temperature can be reduced when the temperature of the wafer is lowered. The temperature or flow rate of the atmosphere gas is adjusted, for example, even if the wafer is rapidly cooled by flowing a low-temperature atmosphere gas or a large amount of atmosphere gas, the relative position of the wafer to such a gas flow is also changed, and the temperature of the wafer is lowered. It is possible to prevent the temperature distribution at the time from becoming non-uniform according to the gas flow pattern, so when cooling down the temperature of the wafer in a short time, the temperature distribution in the wafer surface is controlled while controlling the cooling rate. Uniformity can be ensured.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing an RTP processing apparatus according to a first embodiment of the present invention.

FIG. 2 is a plan view showing a wafer and the like loaded in the RTP processing apparatus of FIG. 1;

FIG. 3 is a diagram showing a time chart of an RTA process using the RTP processing device of FIG. 1;

FIG. 4 is a schematic sectional view showing an RTP processing apparatus according to a second embodiment of the present invention.

FIG. 5 is a plan view showing a wafer and the like loaded in the RTP processing apparatus of FIG. 4;

FIG. 6 is a schematic sectional view showing a conventional RTP processing apparatus.

FIG. 7 is a graph showing the in-plane distribution of the sheet resistance of a p ⁺ diffusion layer and the sheet resistance of a gate electrode having a polycide structure when a conventional RTP process is performed.

FIG. 8 is a bird's-eye view showing an in-plane distribution shape of sheet resistance of ap ⁺ diffusion layer when a conventional RTP process is performed.

[Explanation of symbols]

10 ... RTP processing chamber, 12 ... Gas inlet, 14 ...
Gas discharge unit, 16 wafer holder, 18 wafer, 20 guard ring, 22 rotation transmission unit, 2
4 ... Rotation drive unit, 26 ... Halogen lamp, 28 ...
Reflector, 30 RTP processing chamber, 32 Gas introduction pipe,
34 shower part, 36 gas inlet, 38 gas discharge part, 40 rotary support, 42 rotary drive,
44: rotation transmitting section, 46: disk, 48: wafer holder, 50: wafer, 52: gear, 54:
Halogen lamp, 56, reflector, 60, RTP processing chamber, 62, gas inlet, 64, gas outlet, 66
... Wafer holder 68 68 Wafer 70 Guard ring 72 Halogen lamp 74 Reflector

Claims (22)

[Claims] 1. A method of manufacturing a semiconductor device for performing a rapid thermal process, wherein the semiconductor wafer is heat-treated in a predetermined atmospheric gas while changing a relative position between a heating source and the semiconductor wafer. Manufacturing method of a semiconductor device. 2. The method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor wafer is rotated to change a relative position between the heating source and the semiconductor wafer. 3. The method for manufacturing a semiconductor device according to claim 1, wherein the relative position between the heating source and the semiconductor wafer is changed by revolving the semiconductor wafer. 4. The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor wafer is revolved while rotating, thereby changing a relative position between the heating source and the semiconductor wafer. Production method. 5. The method for manufacturing a semiconductor device according to claim 2, wherein the rotation of the semiconductor wafer is an eccentric rotation of the semiconductor wafer. 6. The method of manufacturing a semiconductor device according to claim 3, wherein the revolution of the semiconductor wafer is an eccentric revolution of the semiconductor wafer. 7. The method for manufacturing a semiconductor device according to claim 1, wherein the predetermined atmospheric gas is an inert gas. 8. The method for manufacturing a semiconductor device according to claim 1, wherein the predetermined atmospheric gas is an oxidizing gas. 9. The method of manufacturing a semiconductor device according to claim 1, wherein the heat treatment of the semiconductor wafer includes a process of lowering the temperature of the semiconductor wafer, and adjusting a temperature or a flow rate of the predetermined atmospheric gas. A method for manufacturing a semiconductor device, comprising controlling a temperature decreasing rate of a semiconductor device. 10. A semiconductor manufacturing apparatus for performing a rapid thermal process, comprising: means for changing a relative position between a heating source and a semiconductor wafer in a predetermined atmospheric gas. 11. The semiconductor manufacturing apparatus according to claim 10, wherein the means for changing a relative position between the heating source and the semiconductor wafer is a means for rotating the semiconductor wafer. 12. The semiconductor manufacturing apparatus according to claim 10, wherein the means for changing the relative position between the heating source and the semiconductor wafer is means for revolving the semiconductor wafer. 13. The semiconductor manufacturing apparatus according to claim 10, wherein the means for changing the relative position between the heating source and the semiconductor wafer is means for revolving the semiconductor wafer while rotating the semiconductor wafer. apparatus. 14. The semiconductor manufacturing apparatus according to claim 11, further comprising means for adjusting a rotation period of the semiconductor wafer. 15. The semiconductor manufacturing apparatus according to claim 11, wherein the means for rotating the semiconductor wafer is a means for eccentrically rotating the semiconductor wafer. 16. The semiconductor manufacturing apparatus according to claim 15, further comprising means for adjusting an eccentricity of eccentric rotation of said semiconductor wafer. 17. The semiconductor manufacturing apparatus according to claim 12, further comprising means for adjusting a revolution period of the semiconductor wafer. 18. The semiconductor manufacturing apparatus according to claim 12, wherein the means for revolving the semiconductor wafer is a means for eccentrically revolving the semiconductor wafer. 19. The semiconductor manufacturing apparatus according to claim 18, further comprising means for adjusting an eccentricity of the eccentric revolution of the semiconductor wafer. 20. The semiconductor manufacturing apparatus according to claim 10, wherein said predetermined atmospheric gas is an inert gas. 21. The semiconductor manufacturing apparatus according to claim 10, wherein said predetermined atmospheric gas is an oxidizing gas. 22. The semiconductor manufacturing apparatus according to claim 10, further comprising means for adjusting a temperature or a flow rate of said predetermined atmospheric gas.