JP2022525438A5 - - Google Patents

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Publication number
JP2022525438A5
JP2022525438A5 JP2021559895A JP2021559895A JP2022525438A5 JP 2022525438 A5 JP2022525438 A5 JP 2022525438A5 JP 2021559895 A JP2021559895 A JP 2021559895A JP 2021559895 A JP2021559895 A JP 2021559895A JP 2022525438 A5 JP2022525438 A5 JP 2022525438A5
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JP
Japan
Prior art keywords
gas
processing chamber
processing
substrate
plasma
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Application number
JP2021559895A
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English (en)
Japanese (ja)
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JP7564123B2 (ja
JP2022525438A (ja
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Priority claimed from PCT/US2020/024633 external-priority patent/WO2020210031A1/en
Publication of JP2022525438A publication Critical patent/JP2022525438A/ja
Publication of JP2022525438A5 publication Critical patent/JP2022525438A5/ja
Application granted granted Critical
Publication of JP7564123B2 publication Critical patent/JP7564123B2/ja
Active legal-status Critical Current
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JP2021559895A 2019-04-11 2020-03-25 処理チャンバ内でのプラズマの高密度化 Active JP7564123B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962832571P 2019-04-11 2019-04-11
US62/832,571 2019-04-11
PCT/US2020/024633 WO2020210031A1 (en) 2019-04-11 2020-03-25 Plasma densification within a processing chamber

Publications (3)

Publication Number Publication Date
JP2022525438A JP2022525438A (ja) 2022-05-13
JP2022525438A5 true JP2022525438A5 (enExample) 2023-04-06
JP7564123B2 JP7564123B2 (ja) 2024-10-08

Family

ID=72748921

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021559895A Active JP7564123B2 (ja) 2019-04-11 2020-03-25 処理チャンバ内でのプラズマの高密度化

Country Status (7)

Country Link
US (1) US20200328066A1 (enExample)
JP (1) JP7564123B2 (enExample)
KR (2) KR20210138792A (enExample)
CN (1) CN113853450A (enExample)
SG (1) SG11202111201WA (enExample)
TW (1) TW202104650A (enExample)
WO (1) WO2020210031A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12211673B2 (en) * 2020-10-22 2025-01-28 Applied Materials, Inc. Processing chamber deposition confinement
CN112593208B (zh) 2020-11-25 2022-01-11 北京北方华创微电子装备有限公司 半导体工艺设备
US12488981B2 (en) 2020-11-25 2025-12-02 Applied Materials, Inc. Systems and methods for deposition residue control
CN119663249A (zh) * 2024-12-24 2025-03-21 拓荆科技(上海)有限公司 薄膜沉积设备和薄膜沉积方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0936053A (ja) * 1995-07-25 1997-02-07 Sony Corp 半導体の製造方法
KR101149332B1 (ko) * 2005-07-29 2012-05-23 주성엔지니어링(주) 플라즈마 식각 장치
KR101017163B1 (ko) * 2008-08-06 2011-02-25 주식회사 동부하이텍 고밀도 플라즈마 화학기상증착장치
KR101829665B1 (ko) * 2011-12-21 2018-02-19 주식회사 원익아이피에스 기판 처리 장치
TWI480417B (zh) * 2012-11-02 2015-04-11 Ind Tech Res Inst 具氣幕之氣體噴灑裝置及其薄膜沉積裝置
US9508547B1 (en) * 2015-08-17 2016-11-29 Lam Research Corporation Composition-matched curtain gas mixtures for edge uniformity modulation in large-volume ALD reactors
US9738977B1 (en) 2016-06-17 2017-08-22 Lam Research Corporation Showerhead curtain gas method and system for film profile modulation

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