Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
  • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/3244—Gas supply means
  • H01J37/32449—Gas control, e.g. control of the gas flow
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
  • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
  • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45519—Inert gas curtains
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45523—Pulsed gas flow or change of composition over time
  • C23C16/45525—Atomic layer deposition [ALD]
  • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
  • C23C16/45536—Use of plasma, radiation or electromagnetic fields
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/3244—Gas supply means
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32623—Mechanical discharge control means
  • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45563—Gas nozzles
  • C23C16/45565—Shower nozzles
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45595—Atmospheric CVD gas inlets with no enclosed reaction chamber
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/54—Apparatus specially adapted for continuous coating
  • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates

Definitions

• the embodiments of the disclosure generally relate to the deposition of thin films on semiconductor substrates.
• PECVD Plasma-enhanced chemical vapor deposition
• plasma is generated within a processing chamber to form the film or films on the substrate.
• the uniformity of one or more parameters of the films corresponds to the uniformity of the density of the plasma. Accordingly, any differences in the plasma density may cause a variation in one or more parameters of the film or films.
• a non-uniform plasma density may generate a film having a non-uniform edge-to-edge thickness, which may cause the processed substrate to be unsuitable for use in semiconductor device fabrication. Accordingly, production yields may be reduced and manufacturing costs may be increased.
• a method for forming a film comprises generating a plasma in a processing volume of a processing chamber to form the film on a substrate, introducing, via an inlet port from a first side of the processing chamber, a barrier gas into the processing volume of the processing chamber to generate a gas curtain along one or more edges of the substrate, and purging, via an exhaust port along a first side of the processing chamber, the plasma and the barrier gas.
• a processing chamber comprises a substrate support configured to support a substrate within a processing volume the processing chamber, a gas inlet port disposed along a first side of the processing chamber, and an exhaust port disposed along the first side of the processing chamber.
• the gas inlet port is configured to be coupled to a gas supply source configured to introduce a barrier gas into the processing volume of the processing chamber to generate a gas curtain along one or more edges of the substrate.
• a processing chamber comprises a gas distributor, a substrate support, a gas inlet, a gas supply source, and an exhaust port.
• the gas distributor is configured to generate a plasma within a processing volume of the processing chamber by ionizing a processing gas.
• the substrate support is configured to support a substrate within a processing volume the processing chamber.
• the gas inlet port is disposed along a first side of the processing chamber.
• the gas supply source is coupled to the gas inlet port and is configured to introduce a barrier gas into the processing volume of the processing chamber to generate a gas curtain along one or more edges of the substrate.
• the exhaust port is disposed along the first side of the processing chamber.
• Figures 1 and 2 are schematic cross-sectional views of a substrate processing system, according to one or more embodiments.
• Figure 3 illustrates a top view of a substrate and a gas curtain, according to one or more embodiments.
• Figure 4 illustrates a flow chart of a method of forming a film, according to one or more embodiments.
• Semiconductor devices can be generated by forming one or more films on a substrate and can include silicon-, nitride-, and oxide-containing films, among others.
• Processing chambers for processing substrates can be configured to perform operations including chemical vapor deposition (CVD) including plasma- enhanced CVD (PECVD), plasma-enhanced atomic layer deposition (PEALD), or physical vapor deposition (PVD).
• CVD chemical vapor deposition
• PECVD plasma- enhanced CVD
• PEALD plasma-enhanced atomic layer deposition
• PVD physical vapor deposition
• the quality of the films on the substrates can be negatively impacted based on the difference, or non-uniformity, in plasma density of a plasma over a substrate within a processing chamber.
• the difference in the plasma density within the processing volume of the processing chamber may negatively affect the edge-to-edge uniformity of the films formed on a substrate. Further, any non-uniformity of the films may result in a drop in production yield, increasing
• the uniformity of the density of the plasma within the processing volume, in particular over the substrate may be improved significantly. Uniformity may be improved for a particular process, for example, by introducing a barrier gas into the processing volume to generate a gas curtain that decreases the dispersion of the plasma within the processing volume.
• the decreased dispersion of the plasma within the processing volumes increases the uniformity of the plasma over the substrate.
• decreased dispersion of the plasma within the processing volume e.g., increased densification of the plasma within the processing volume
• decreasing the dispersion of the plasma may positively adjust film properties such as the refractive index (n), stress, and extinction coefficient (k), due, in part, to the increased deposition uniformity of formed film.
• FIG. 1 illustrates a schematic cross-sectional view of a processing chamber 100 according to one implementation described herein.
• the processing chamber 100 is a PECVD chamber, but may also be another plasma enhanced processing chamber.
• the processing chamber 100 features a chamber body 102, a substrate support 104 disposed inside the chamber body 102, and a lid assembly 106 coupled to the chamber body 102 and enclosing the substrate support 104 in a processing volume 120.
• the substrate support 104 is configured to support a substrate 154 thereon during processing.
• the substrate 154 is provided to the processing volume 120 through an opening 126. While the embodiment of Figure 1 is directed to a PECVD chamber, the lid assembly 106 and substrate support 104 of Figure 1 may be used with other processing chamber that utilize plasma generated in the processing volume 120.
• the gas supply source 1 1 1 includes one or more gas sources.
• the gas supply source 1 1 1 is configured to deliver the one or more gases from the one or more gas sources to the processing volume 120.
• Each of the one or more gas sources provides a processing gas (such as argon, hydrogen or helium) that may be ionized to for plasma formation.
• a processing gas such as argon, hydrogen or helium
• a carrier gas and an ionizable gas may be provided into the processing volume 120 along with one or more precursors.
• the processing gases are introduced to the processing chamber 100 at a flow rate from about 6500 seem to about 8000 seem, from about 100 seem to about 10,000 seem, or from about 100 seem to about 1000 seem.
• a remote plasma source can be used to deliver plasma to the processing chamber 100 and can be coupled to the gas supply source 1 1 1 .
• the gas distributor 1 12 features openings 1 18 for admitting a processing gas or gases into the processing volume 120 from the gas supply source 1 1 1.
• the processing gases are supplied to the processing chamber 100 via the conduit 1 14, and the process gases enter a gas mixing region 1 16 prior to flowing through the openings 1 18.
• An electrode 108 is disposed adjacent to the chamber body 102 and separates the chamber body 102 from other components of the lid assembly 106.
• the electrode 108 is part of the lid assembly 106, but may be a separate side wall electrode.
• the electrode 108 may be an annular, or ring-like member, and may be a ring electrode.
• the electrode 108 may be a continuous loop around a circumference of the processing chamber 100 surrounding the processing volume 120, or may be discontinuous at selected locations.
• the electrode 108 may also be a perforated electrode, such as a perforated ring or a mesh electrode.
• the electrode 108 may also be a plate electrode, for example, a secondary gas distributor.
• the electrode 108 is coupled to a power source 128.
• the power source 128 is a radio frequency (RF) power source that is electrically coupled to the electrode 108. Further, the power source 128 provides between about 100 Watts and about 3,000 Watts at a frequency of about 50 kHz to about 13.6 MHZ. Optionally, the power source 128 can be pulsed during various operations.
• the electrode 108 and power source 128 facilitate additional control of a plasma formed within the processing volume 120.
• the substrate support 104 contains or is formed from one or more metallic or ceramic materials.
• Exemplary metallic or ceramic materials include one or more metals, metal oxides, metal nitrides, metal oxynitrides, or any combination thereof.
• the substrate support 104 may contain or be formed from aluminum, aluminum oxide, aluminum nitride, aluminum oxynitride, or any combination thereof.
• An electrode 122 is embedded within the substrate support 104, but may alternatively becoupled to a surface of the substrate support 104.
• the electrode 122 is coupled to a power source 136.
• the power source 136 is DC power, pulsed DC power, radio frequency (RF) power, pulsed RF power, or any combination thereof.
• the power source 136 is configured to drive the electrode 122 with a drive signal to generate a plasma within the processing volume 120.
• the drive signal may be one of a DC signal and a varying voltage signal (e.g., RF signal).
• the electrode 122 may alternatively be coupled to the power source 128 instead of the power source 136, and the power source 136 may be omitted.
• Plasma is generated in the processing volume 120 via the power source 128 and the power source 136.
• An RF field is created by driving at least one of the electrode 108 and driving the electrode 122 with drive signals to facilitate the formation of a capacitive plasma within the processing volume 120.
• the presence of a plasma facilitates processing of the substrate 154, for example, deposition of a film onto a surface of the substrate 154.
• One or more gas inlet ports 152 are coupled to gas supply source 153 and disposed within a bottom chamber wall 101 of the processing chamber 100 beneath the substrate support 104.
• the gas supply source 153 provides one or more gases through the gas inlet port 152 and into the processing volume 120.
• the gas supply source 153 provides a barrier gas into the processing volume 120.
• the barrier gas is any gas that does not significantly interact (e.g., mix) with the plasma and is able to create a gas curtain around the substrate 154, slowing the dispersion of the plasma within the processing volume 120.
• a gas that does not significantly interact with the plasma may be any gas that at least partially slows the dispersion of the plasma within the processing volume 120.
• a barrier gas may be any gas that reduces the formation of parasitic plasma.
• the barrier gas may be an inert gas.
• the barrier gas may be any one of helium, hydrogen, nitrogen, argon, oxygen, or nitrogen oxide (NO x ), among others.
• the gas supply source 153 controls the type of barrier gas and the flow rate of the barrier gas into the processing volume 120, controlling one or more parameters of the gas curtain created by the barrier gas.
• the barrier gas may function as a purge gas to facilitate removal of gases, plasma, or processing by-products from the processing volume 120.
• the shield (or ring) 160 directs the barrier gas to flow along the perimeter of the substrate support 104 and the perimeter of the substrate 154.
• the shield 160 may control the flow of the barrier gas such that the barrier gas flows along the perimeter of the substrate support 104 and the perimeter of the substrate 154 before dispersing within the processing volume 120.
• the shield 160 is coupled to the chamber wall 101.
• the shield 160 may be coupled to another chamber wall of the processing chamber 100. As illustrated, the shield 160 circumscribes the substrate support 104.
• An exhaust port 156 is coupled to a vacuum pump 157 and is disposed along the same wall, e.g. chamber wall 101 , of the processing chamber 100 as is the gas inlet port 152.
• the exhaust port 156 may positioned along another wall of the processing chamber 100 as long as the flow of the barrier gas along the perimeter of the substrate 154 is not negatively affected, preventing the gas curtain 214 of Figure 2 from being formed.
• the vacuum pump 157 removes excess process gases or by-products from the processing volume 120 during and/or after processing via the exhaust port 156.
• Figure 2 illustrates a schematic cross-sectional view of the processing chamber 100, as well as how gases flow within the processing chamber 100 and the creation of a gas curtain within the processing chamber 100, according to one or more embodiments.
• One or more processing gases flow along path 210 from the gas supply source 1 1 1 and through the gas distributor 1 12 to facilitate processing of the substrate 154.
• the processing gases are converted into a plasma within a plasma region 220 over the substrate 154 within the processing volume 120 of Figure 1 .
• a barrier gas is provided via the gas inlet port 152 to function as a purge gas, aiding in the removal of excess processing gases or by-products from the processing volume 120 during and/or after processing via the exhaust port 156 and to also generate a gas curtain 214.
• the barrier gas flows along path 212 (e.g., the paths 212a and 212b).
• the barrier gas reduces the dispersion of the plasma throughout the processing chamber is achieved.
• the barrier gas may not interact (e.g., mix) due to a difference in electronegativity between the barrier gas and the processing gases.
• reducing the dispersion of the plasma throughout the processing chamber increases the uniformity of the density of the plasma within the plasma region 220 over the substrate.
• the density of the plasma along the edge of the substrate 154 may be similar to the density of the plasma near the center of the substrate 154.
• a film formed from the plasma having a more uniform density may have a more uniform edge-to edge thickness or k value.
• the thickness of the film and/or the k value of the film along the edge of the substrate 154 may be similar to the thickness of the film and/or k value of the film near the center of the substrate 154.
• the deposition rate of a film formed from a plasma having a more uniform density may be about 20 percent higher than a deposition rate of a film formed form a plasma not having a uniform density, while maintaining a similar film quality.
• the gas curtain 214 functions as a choke to reduce dispersion of the plasma within the processing volume 120, densifying the plasma within plasma region 220 and increasing the uniformity of the density of the plasma within the plasma region 220. Further, the gas curtain may be created around the entire perimeter of the substrate 154. Decreasing the dispersion of the plasma within the processing volume entraps the plasma and increases the uniformity of the plasma within plasma region 220. Accordingly, the deposition uniformity of a corresponding film is increased. Further, decreasing the dispersion of the plasma increases the quality of the plasma by increasing the rate of deposition and/or the k value of the film formed on the substrate.
• the cross-sectional shape of the edge-to- edge thickness profile of a film formed on a substrate within a processing chamber employing a barrier gas is flatter than the cross-sectional shape of the edge-to-edge thickness profile of a film formed on a substrate within a processing chamber not employing a barrier gas.
• the k value profile of a film formed on a substrate within a processing chamber employing a barrier gas is greater than the k value profile of a film formed on a substrate within a processing chamber not employing a barrier gas.
• the flow rate and type of the barrier gas may correspond to the amount at which the plasma is prevented from being dispersed within the processing volume 120, and to the uniformity of the plasma density. For example, higher flow rates may provide a larger decrease in the amount that the plasma is dispersed and larger increases to the uniformity of the plasma density as compared to lower flow rates.
• the flow rate of the barrier gas may be in a range of about 100 seem to about 5000 seem. In one example embodiment, the flow rate of the barrier gas may be in a rage of about 100 seem to about 1000 seem when the flow rate of a processing gas is about 3 liters, depending on the type of processing gas utilized. Further, the flow rate of the barrier gas may be less than of the flow rate of the processing gas.
• the flow rate of the barrier gas may be a percentage of the flow rate of the processing gas.
• An example flow rate of the barrier gas may be in a range of about 10% to about 80% of the processing gas. Alternatively, percentages of less than 10% and greater than 80% may be utilized.
• barrier gas may prevent different amounts of plasma from being dispersed and provide larger increases to the uniformity of the plasma density within the processing volume 120.
• the flow rate of the barrier gas may be based on at least one of the type of barrier gas utilized, the type of gas used to generate the plasma, the flow rate of the processing gas, and the amount of plasma dispersion to be prevented.
• the flow rate of a first barrier gas utilized for a first processing gas may differ from the flow rate of the first barrier gas utilized for a second processing gas.
• the flow rate of a first barrier gas utilized for a first processing gas may differ from the flow rate of a second barrier gas utilized for the first processing gas.
• the type of barrier gas may be selected based on an electronegativity of the processing gas or gases.
• the barrier gas may be selected based on a difference in electronegativity between the processing gas and the barrier gas.
• the barrier gas may be selected to maximize a difference in electronegativity between the processing gas and the barrier gas.
• the barrier gas may be selected according to the drive signal utilized to convert the processing gas into a plasma.
• the barrier gas may be selected such that the barrier gas does not ionize (e.g., ignite) into a plasma in the presence of the drive signal utilized to convert the processing gas into a plasma.
• Figure 3 illustrates a top view of the gas curtain 214, according to one or more embodiments.
• the substrate 154 is surrounded by the gas curtain 214.
• the gas curtain 214 may partially surround the substrate 154.
• the thickness of the gas curtain 214 may be substantially uniform, or non-uniform. Additionally, or alternatively, the distance between the substrate 154 and the gas curtain 214 may be substantially uniform or non-uniform.
• film deposition operations can include the formation of one or more films on the substrate 154 positioned on the substrate support 104.
• Figure 4 is a flow chart of a method 400 for processing a substrate, according to one or more embodiments.
• the method 400 may be employed to form one or more films on the substrate 154.
• the substrate 154 may be positioned within the processing chamber 100 to form the one or more films on the substrate 154.
• a plasma in generated in the processing volume 120 of the processing chamber 100 may be introduced by the gas supply source 1 1 1 to the processing chamber 100.
• the process gases may include at least one precursor gas, ionizable gas and carrier gas, and one or more of the processing gases may be ionized to form a plasma.
• the electrode 122 may be driven with an RF signal by the power source 136 to ionize the processing gas or gases into a plasma.
• the precursor gas may be utilized to form a film on a substrate in the presence of the plasma.
• the power sources 128 and 136 may be driven while the process gas is introduced into the processing chamber 100 to generate the plasma.
• a barrier gas is introduced into the processing volume 120 of the processing chamber 100.
• the barrier gas may be introduced into processing volume 120 of the processing chamber 100 by the gas supply source 153 via the gas inlet port 152.
• the barrier gas may generate a gas curtain, e.g., gas curtain 214, which reduces the dispersion of the plasma within the processing volume 120, increasing the uniformity of the density of the plasma over the substrate 154.
• the gas curtain 214 may function as a choke, reducing the amount of parasitic plasma that is formed near the edge of the substrate 154 and increasing uniformity of the density of the plasma within the plasma region 220.
• the edge-to-edge uniformity of one or more parameters of a film formed on the substrate 154 is also increased.
• the edge-to-edge uniformity of a thickness of the film may be increased.
• the edge-to- edge uniformity of a k value of the film may be increased.
• the increase in the uniformity of the density may generate localized plasma densification which may enhance the plasma quality and increase the deposition rate of a corresponding film, improving one or more parameters of the film.
• the flow rate of the of the barrier gas may be selected depending on the type of processing gas, the type of barrier gas, and/or the flow rate of the processing gas.
• the flow rate of the barrier gas may be less than the flow rate of the processing gas. Further, the flow rate of the barrier gas may be a percentage of the flow rate of the processing gas. Additionally, or alternatively, the flow rate of the barrier gas may correspond to the amount at which the plasma is densified over the substrate 154.
• the flow rate of the barrier gas may be adjusted to maintain a substantially uniform plasma density over the substrate 154.
• the flow rate of the barrier gas may be adjusted to maintain a plasma density that is within about 5% of optimum uniformity.
• the flow rate of the barrier gas may be increased when the uniformity of plasma density is less than a first threshold value and increased when the plasma density is greater than a second threshold value. While two thresholds are discussed, alternatively, more than two thresholds or less than two thresholds may be utilized.
• the plasma and barrier gas is purged from the processing chamber 100.
• the exhaust port 156 may be coupled to the vacuum pump 157, and the vacuum pump 157 removes excess process gases or by products from the processing volume 120 during and/or after processing via the exhaust.
• the uniformity of the density of a plasma may be increased within a processing volume of a processing chamber, increasing the uniformity of a corresponding film or films generated on a substrate. Further, the disposition rate of films is increased. As such, the production yield of corresponding semiconductor devices may be increased and the manufacturing costs may be decreased.
• the barrier gas may generate a gas curtain, or choke, to decrease the dispersion of the plasma within the processing volume, increasing the uniformity of the density of the plasma over the substrate.

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• 2020
  • 2020-03-25 CN CN202080037327.XA patent/CN113853450A/zh active Pending
  • 2020-03-25 JP JP2021559895A patent/JP7564123B2/ja active Active
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  • 2020-03-25 US US16/829,573 patent/US20200328066A1/en not_active Abandoned
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