JP2024518334A5 - - Google Patents

Info

Publication number
JP2024518334A5
JP2024518334A5 JP2023566410A JP2023566410A JP2024518334A5 JP 2024518334 A5 JP2024518334 A5 JP 2024518334A5 JP 2023566410 A JP2023566410 A JP 2023566410A JP 2023566410 A JP2023566410 A JP 2023566410A JP 2024518334 A5 JP2024518334 A5 JP 2024518334A5
Authority
JP
Japan
Prior art keywords
plasma
opening
transport direction
wall
processing area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023566410A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024518334A (ja
Filing date
Publication date
Priority claimed from EP21171389.6A external-priority patent/EP4084040A1/en
Application filed filed Critical
Publication of JP2024518334A publication Critical patent/JP2024518334A/ja
Publication of JP2024518334A5 publication Critical patent/JP2024518334A5/ja
Pending legal-status Critical Current

Links

JP2023566410A 2021-04-29 2022-04-20 プラズマ処理のための方法及び装置 Pending JP2024518334A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP21171389.6 2021-04-29
EP21171389.6A EP4084040A1 (en) 2021-04-29 2021-04-29 Method and devices for plasma treatment
PCT/EP2022/060433 WO2022228969A1 (en) 2021-04-29 2022-04-20 Method and devices for plasma treatment

Publications (2)

Publication Number Publication Date
JP2024518334A JP2024518334A (ja) 2024-05-01
JP2024518334A5 true JP2024518334A5 (enExample) 2025-05-15

Family

ID=75746365

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023566410A Pending JP2024518334A (ja) 2021-04-29 2022-04-20 プラズマ処理のための方法及び装置

Country Status (6)

Country Link
US (1) US20240222088A1 (enExample)
EP (2) EP4084040A1 (enExample)
JP (1) JP2024518334A (enExample)
KR (1) KR20240019088A (enExample)
CN (1) CN117355921A (enExample)
WO (1) WO2022228969A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4438765A1 (en) * 2023-03-27 2024-10-02 voestalpine Stahl GmbH Method and device for plasma heating of the internal walls of a vacuum furnace

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2547692B1 (fr) * 1983-06-15 1988-07-15 Centre Nat Rech Scient Procede et dispositif de production d'un plasma de grand volume homogene, de grande densite et de faible temperature electronique
US4996077A (en) * 1988-10-07 1991-02-26 Texas Instruments Incorporated Distributed ECR remote plasma processing and apparatus
US5122251A (en) * 1989-06-13 1992-06-16 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
JPH076998A (ja) * 1990-11-30 1995-01-10 Ulvac Japan Ltd マイクロ波プラズマ処理装置
BE1009839A3 (fr) 1995-12-20 1997-10-07 Cockerill Rech & Dev Procede et dispositif pour le nettoyage d'un substrat metallique.
EP1178134A1 (fr) 2000-08-04 2002-02-06 Cold Plasma Applications C.P.A. Procédé et dispositif pour traiter des substrats métalliques au défilé par plasma
EP2053631A1 (fr) 2007-10-22 2009-04-29 Industrial Plasma Services & Technologies - IPST GmbH Procédé et dispositif pour le traitement par plasma de substrats au défilé
BE1017852A3 (fr) * 2007-11-19 2009-09-01 Ind Plasma Services & Technologies Ipst Gmbh Procede et installation de galvanisation par evaporation plasma.
US9458533B2 (en) * 2007-12-21 2016-10-04 Advanced Galvanisation Ag Method and devices for controlling a vapour flow in vacuum evaporation
US9249502B2 (en) * 2008-06-20 2016-02-02 Sakti3, Inc. Method for high volume manufacture of electrochemical cells using physical vapor deposition
US8436318B2 (en) 2010-04-05 2013-05-07 Varian Semiconductor Equipment Associates, Inc. Apparatus for controlling the temperature of an RF ion source window
US10475626B2 (en) * 2015-03-17 2019-11-12 Applied Materials, Inc. Ion-ion plasma atomic layer etch process and reactor
JP6948788B2 (ja) * 2016-12-15 2021-10-13 東京エレクトロン株式会社 プラズマ処理装置

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