JP2022512852A - He孔着火/アーク放電を防止する特徴を有する高出力静電チャック - Google Patents
He孔着火/アーク放電を防止する特徴を有する高出力静電チャック Download PDFInfo
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- 238000010891 electric arc Methods 0.000 title description 19
- 230000001629 suppression Effects 0.000 claims abstract description 24
- 239000001307 helium Substances 0.000 claims abstract description 19
- 229910052734 helium Inorganic materials 0.000 claims abstract description 19
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000000919 ceramic Substances 0.000 claims description 50
- 239000007787 solid Substances 0.000 claims description 22
- 238000010586 diagram Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 210000002381 plasma Anatomy 0.000 description 9
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 8
- 230000006378 damage Effects 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000005304 joining Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 208000033999 Device damage Diseases 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Plasma Technology (AREA)
- Ceramic Products (AREA)
Abstract
Description
本出願は、参照により本明細書に事実上組み込まれる、2018年11月1日に提出された米国特許出願公開第62/754,308号明細書の優先権の利益を主張する。
Claims (17)
- プラズマ処理チャンバ内における静電チャック内のヘリウムライン用火花抑制装置であって、前記ヘリウムライン内に誘電体多管腔プラグを備え、前記誘電体多管腔プラグは、複数の管腔を有し、前記複数の管腔は、合わせて30~100,000の間の管腔であり、1ミクロン~200ミクロンの間の幅を有する、火花抑制装置。
- 請求項1に記載の火花抑制装置であって、さらに、前記誘電体多管腔プラグの第1の側に第1のプレナムを備え、前記誘電体多管腔プラグの第2の側に第2のプレナムを備え、前記第2の側は前記第1の側の反対側であり、前記複数の管腔は前記第1のプレナムから前記第2のプレナムまで延伸する火花抑制装置。
- 請求項2に記載の火花抑制装置であって、前記ヘリウムラインは前記誘電体多管腔プラグの前記第1の側に第1の部分を有し、前記誘電体多管腔プラグの前記第2の側に第2の部分を有し、前記複数の管腔は前記ヘリウムラインの前記第1の部分と前記ヘリウムラインの前記第2の部分の間の直線に沿って配置されていない、火花抑制装置。
- 請求項3に記載の火花抑制装置であって、前記誘電体多管腔プラグは前記ヘリウムラインの前記第1の部分と前記ヘリウムラインの前記第2の部分の間に固体状コアをさらに備え、前記複数の管腔は前記固体状コアを取り囲む、火花抑制装置。
- 請求項2に記載の火花抑制装置であって、さらに、前記誘電体多管腔プラグから前記第2のプレナムの前記第2のプレナムの反対側に間隔を置いて配置されている、前記第2のプレナムに近接する誘電体プラグを備える、火花抑制装置。
- 請求項5に記載の火花抑制装置であって、前記誘電体プラグは、多孔性誘電体プラグである、または前記誘電体プラグを通って延伸する複数の管腔を備える、火花抑制装置。
- 請求項2に記載の火花抑制装置であって、前記誘電体多管腔プラグは、前記第1のプレナムおよび前記第2のプレナムのうち少なくとも一方の中に延伸する、火花抑制装置。
- 請求項1に記載の火花抑制装置であって、前記誘電体多管腔プラグは誘電体セラミックプラグである、火花抑制装置。
- 請求項1に記載の火花抑制装置であって、前記誘電体多管腔プラグは、前記静電チャックに接合されている、火花抑制装置。
- 請求項1に記載の火花抑制装置であって、前記誘電体多管腔プラグはT字形であり、T字形キャビティ内に搭載され、前記T字形キャビティの最下部まで延伸しない、火花抑制装置。
- 請求項10に記載の火花抑制装置であって、前記誘電体多管腔プラグは、さらに、前記誘電体多管腔プラグ内部に第1のプレナムを備え、前記複数の管腔は、前記第1のプレナムから前記誘電体多管腔プラグの表面まで延伸する、火花抑制装置。
- 請求項11に記載の火花抑制装置であって、さらに、前記複数の管腔が延伸する前記誘電体多管腔プラグの前記表面に近接する第2のプレナムを備える、火花抑制装置。
- 請求項10に記載の火花抑制装置であって、前記誘電体多管腔プラグの最上部は、前記T字形キャビティの最上部に接合され、さらに、前記T字形キャビティの前記最上部の下方に、前記T字形キャビティと前記誘電体多管腔プラグの間にギャップを備える、火花抑制装置。
- 請求項1に記載の火花抑制装置であって、前記静電チャックは、ベースプレート、セラミックプレート、および前記ベースプレートと前記セラミックプレートの間の接合層を備え、前記火花抑制装置は、前記ベースプレートと前記セラミックプレートの間に第1のプレナムをさらに備え、前記第1のプレナムは、前記誘電体多管腔プラグに近接し、前記複数の管腔は、前記第1のプレナムまで延伸する、火花抑制装置。
- 請求項14に記載の火花抑制装置であって、前記誘電体多管腔プラグは前記ベースプレートまたは前記セラミックプレートに接合されている、火花抑制装置。
- 請求項14に記載の火花抑制装置であって、前記誘電体多管腔プラグは、前記セラミックプレートに接合され、前記火花抑制装置は、さらに、前記第1のプレナムと反対側にある前記誘電体多管腔プラグの側に第2のプレナムを備え、前記複数の管腔は、前記第1のプレナムから前記第2のプレナムまで延伸する、火花抑制装置。
- 請求項16に記載の火花抑制装置であって、さらに、
前記誘電体多管腔プラグと反対側にある前記第1のプレナムの側にある誘電体プラグと、
前記第1のプレナムの反対側にある前記誘電体プラグの側にある第3のプレナムと、を備え前記誘電体プラグは前記第1のプレナムから前記第3のプレナムまで延伸している複数の管腔を備える、
火花抑制装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862754308P | 2018-11-01 | 2018-11-01 | |
US62/754,308 | 2018-11-01 | ||
PCT/US2019/058626 WO2020092412A1 (en) | 2018-11-01 | 2019-10-29 | High power electrostatic chuck with features preventing he hole light-up/arcing |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022512852A true JP2022512852A (ja) | 2022-02-07 |
JP7534292B2 JP7534292B2 (ja) | 2024-08-14 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2021523336A Active JP7534292B2 (ja) | 2018-11-01 | 2019-10-29 | He孔着火/アーク放電を防止する特徴を有する高出力静電チャック |
Country Status (6)
Country | Link |
---|---|
US (1) | US20220223387A1 (ja) |
JP (1) | JP7534292B2 (ja) |
KR (1) | KR20210072114A (ja) |
CN (1) | CN112970091A (ja) |
TW (1) | TW202033060A (ja) |
WO (1) | WO2020092412A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020150257A (ja) * | 2019-03-05 | 2020-09-17 | Toto株式会社 | 静電チャック、および処理装置 |
WO2023190449A1 (ja) * | 2022-03-30 | 2023-10-05 | 京セラ株式会社 | 通気性プラグおよび載置台 |
WO2024090276A1 (ja) * | 2022-10-24 | 2024-05-02 | 東京エレクトロン株式会社 | 基板支持器及びプラズマ処理装置 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7441403B2 (ja) * | 2019-03-05 | 2024-03-01 | Toto株式会社 | 静電チャック、および処理装置 |
US11551960B2 (en) * | 2020-01-30 | 2023-01-10 | Applied Materials, Inc. | Helical plug for reduction or prevention of arcing in a substrate support |
JP7515583B2 (ja) | 2020-05-28 | 2024-07-12 | 京セラ株式会社 | 通気性プラグ、基板支持アセンブリおよびシャワープレート |
US20230170241A1 (en) * | 2021-11-29 | 2023-06-01 | Applied Materials, Inc. | Porous plug for electrostatic chuck gas delivery |
WO2023121945A1 (en) * | 2021-12-22 | 2023-06-29 | Lam Research Corporation | Electrostatic chucks with self-sealing gas conduits and/or reduced clogging due to residue |
JP7514817B2 (ja) * | 2021-12-27 | 2024-07-11 | 日本碍子株式会社 | 半導体製造装置用部材 |
WO2024129283A1 (en) * | 2022-12-16 | 2024-06-20 | Lam Research Corporation | Electrostatic chuck with halogen modulated silicone dike |
US20240249965A1 (en) * | 2023-01-19 | 2024-07-25 | Applied Materials, Inc. | Substrate support carrier having multiple ceramic discs |
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JP3050716B2 (ja) * | 1993-02-20 | 2000-06-12 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US6108189A (en) * | 1996-04-26 | 2000-08-22 | Applied Materials, Inc. | Electrostatic chuck having improved gas conduits |
US6490145B1 (en) * | 2001-07-18 | 2002-12-03 | Applied Materials, Inc. | Substrate support pedestal |
TW561515B (en) * | 2001-11-30 | 2003-11-11 | Tokyo Electron Ltd | Processing device, and gas discharge suppressing member |
US6914007B2 (en) * | 2003-02-13 | 2005-07-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | In-situ discharge to avoid arcing during plasma etch processes |
JP4557814B2 (ja) | 2005-06-09 | 2010-10-06 | パナソニック株式会社 | プラズマ処理装置 |
JP5188696B2 (ja) | 2006-11-01 | 2013-04-24 | 株式会社日立ハイテクノロジーズ | ウエハ載置用電極 |
US20090086401A1 (en) | 2007-09-28 | 2009-04-02 | Intevac, Inc. | Electrostatic chuck apparatus |
US8336891B2 (en) * | 2008-03-11 | 2012-12-25 | Ngk Insulators, Ltd. | Electrostatic chuck |
US20090274590A1 (en) * | 2008-05-05 | 2009-11-05 | Applied Materials, Inc. | Plasma reactor electrostatic chuck having a coaxial rf feed and multizone ac heater power transmission through the coaxial feed |
US9218997B2 (en) * | 2008-11-06 | 2015-12-22 | Applied Materials, Inc. | Electrostatic chuck having reduced arcing |
JP5449750B2 (ja) * | 2008-11-19 | 2014-03-19 | 株式会社日本セラテック | 静電チャックおよびその製造方法 |
JP2010182763A (ja) * | 2009-02-04 | 2010-08-19 | Hitachi High-Technologies Corp | プラズマ処理装置 |
WO2013118781A1 (ja) * | 2012-02-08 | 2013-08-15 | 東京エレクトロン株式会社 | 静電チャック装置 |
JP6005579B2 (ja) * | 2012-04-27 | 2016-10-12 | 日本碍子株式会社 | 半導体製造装置用部材 |
JP5633766B2 (ja) * | 2013-03-29 | 2014-12-03 | Toto株式会社 | 静電チャック |
KR101517720B1 (ko) * | 2014-01-21 | 2015-05-04 | (주)아이씨디 | 정전척 및 이를 포함하는 플라즈마 발생장치 |
JP6509139B2 (ja) | 2016-01-29 | 2019-05-08 | 日本特殊陶業株式会社 | 基板支持装置及びその製造方法 |
US10770270B2 (en) * | 2016-06-07 | 2020-09-08 | Applied Materials, Inc. | High power electrostatic chuck with aperture-reducing plug in a gas hole |
US10535505B2 (en) * | 2016-11-11 | 2020-01-14 | Lam Research Corporation | Plasma light up suppression |
JP6489277B1 (ja) | 2018-03-14 | 2019-03-27 | Toto株式会社 | 静電チャック |
CN111128837B (zh) * | 2018-10-30 | 2024-06-25 | Toto株式会社 | 静电吸盘 |
-
2019
- 2019-10-29 WO PCT/US2019/058626 patent/WO2020092412A1/en active Application Filing
- 2019-10-29 JP JP2021523336A patent/JP7534292B2/ja active Active
- 2019-10-29 KR KR1020217016661A patent/KR20210072114A/ko active Search and Examination
- 2019-10-29 US US17/281,183 patent/US20220223387A1/en active Pending
- 2019-10-29 CN CN201980072982.6A patent/CN112970091A/zh active Pending
- 2019-10-31 TW TW108139452A patent/TW202033060A/zh unknown
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020150257A (ja) * | 2019-03-05 | 2020-09-17 | Toto株式会社 | 静電チャック、および処理装置 |
JP7441404B2 (ja) | 2019-03-05 | 2024-03-01 | Toto株式会社 | 静電チャック、および処理装置 |
WO2023190449A1 (ja) * | 2022-03-30 | 2023-10-05 | 京セラ株式会社 | 通気性プラグおよび載置台 |
WO2024090276A1 (ja) * | 2022-10-24 | 2024-05-02 | 東京エレクトロン株式会社 | 基板支持器及びプラズマ処理装置 |
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TW202033060A (zh) | 2020-09-01 |
JP7534292B2 (ja) | 2024-08-14 |
US20220223387A1 (en) | 2022-07-14 |
CN112970091A (zh) | 2021-06-15 |
WO2020092412A1 (en) | 2020-05-07 |
KR20210072114A (ko) | 2021-06-16 |
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