JP2022511063A - 温度の影響を受けやすいプロセスのための改善された熱的結合を有する静電チャック - Google Patents

温度の影響を受けやすいプロセスのための改善された熱的結合を有する静電チャック Download PDF

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Publication number
JP2022511063A
JP2022511063A JP2021532010A JP2021532010A JP2022511063A JP 2022511063 A JP2022511063 A JP 2022511063A JP 2021532010 A JP2021532010 A JP 2021532010A JP 2021532010 A JP2021532010 A JP 2021532010A JP 2022511063 A JP2022511063 A JP 2022511063A
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Japan
Prior art keywords
electrostatic chuck
openings
dielectric
peripheral region
opening
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JP2021532010A
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English (en)
Japanese (ja)
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JP2022511063A5 (https=
Inventor
ボニー ティー チア
ロス マーシャル
智治 松下
チェン－ション ツァイ
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Applied Materials Inc
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Applied Materials Inc
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Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2022511063A publication Critical patent/JP2022511063A/ja
Publication of JP2022511063A5 publication Critical patent/JP2022511063A5/ja
Priority to JP2025184352A priority Critical patent/JP2026020182A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0471—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24F—AIR-CONDITIONING; AIR-HUMIDIFICATION; VENTILATION; USE OF AIR CURRENTS FOR SCREENING
    • F24F3/00—Air-conditioning systems in which conditioned primary air is supplied from one or more central stations to distributing units in the rooms or spaces where it may receive secondary treatment; Apparatus specially designed for such systems
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2021532010A 2018-12-07 2019-12-05 温度の影響を受けやすいプロセスのための改善された熱的結合を有する静電チャック Pending JP2022511063A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025184352A JP2026020182A (ja) 2018-12-07 2025-10-31 温度の影響を受けやすいプロセスのための改善された熱的結合を有する静電チャック

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/213,816 2018-12-07
US16/213,816 US11031273B2 (en) 2018-12-07 2018-12-07 Physical vapor deposition (PVD) electrostatic chuck with improved thermal coupling for temperature sensitive processes
PCT/US2019/064772 WO2020118104A1 (en) 2018-12-07 2019-12-05 Electrostatic chuck with improved thermal coupling for temperature sensitive processes

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025184352A Division JP2026020182A (ja) 2018-12-07 2025-10-31 温度の影響を受けやすいプロセスのための改善された熱的結合を有する静電チャック

Publications (2)

Publication Number Publication Date
JP2022511063A true JP2022511063A (ja) 2022-01-28
JP2022511063A5 JP2022511063A5 (https=) 2022-12-14

Family

ID=70971118

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021532010A Pending JP2022511063A (ja) 2018-12-07 2019-12-05 温度の影響を受けやすいプロセスのための改善された熱的結合を有する静電チャック
JP2025184352A Pending JP2026020182A (ja) 2018-12-07 2025-10-31 温度の影響を受けやすいプロセスのための改善された熱的結合を有する静電チャック

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025184352A Pending JP2026020182A (ja) 2018-12-07 2025-10-31 温度の影響を受けやすいプロセスのための改善された熱的結合を有する静電チャック

Country Status (6)

Country Link
US (1) US11031273B2 (https=)
JP (2) JP2022511063A (https=)
KR (1) KR102892468B1 (https=)
CN (1) CN113169111A (https=)
TW (1) TWI871296B (https=)
WO (1) WO2020118104A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11229968B2 (en) * 2011-11-30 2022-01-25 Watlow Electric Manufacturing Company Semiconductor substrate support with multiple electrodes and method for making same
WO2022174919A1 (en) * 2021-02-19 2022-08-25 Applied Materials, Inc. Substrate support, method of processing a substrate, and processing system
US20230011261A1 (en) * 2021-07-09 2023-01-12 Applied Materials, Inc. Multi-zone heater with minimum rf loss
KR102872170B1 (ko) * 2021-07-19 2025-10-15 삼성전자주식회사 반도체 장치의 제조용 장비 및 반도체 장치의 제조 방법
US20230073150A1 (en) * 2021-09-09 2023-03-09 Applied Materials, Inc. Heated lid for a process chamber
CN113903699B (zh) * 2021-09-22 2026-04-21 北京北方华创微电子装备有限公司 静电卡盘及半导体加工设备
CN118843930A (zh) * 2022-03-18 2024-10-25 朗姆研究公司 用于减少晶片背侧损伤的装置和方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07201961A (ja) * 1993-12-20 1995-08-04 Internatl Business Mach Corp <Ibm> 静電チャック装置の製造方法
JP2001118915A (ja) * 1999-10-15 2001-04-27 Applied Materials Inc 内蔵チャンネルを有する多層セラミック静電チャック
JP2003524885A (ja) * 1999-09-29 2003-08-19 東京エレクトロン株式会社 多重領域抵抗ヒータ
JP2003249541A (ja) * 2002-02-26 2003-09-05 Hitachi High-Technologies Corp ウエハステージ
JP2005045207A (ja) * 2003-07-23 2005-02-17 Samsung Electronics Co Ltd ウエハー用静電チャック
JP2005136104A (ja) * 2003-10-29 2005-05-26 Ngk Spark Plug Co Ltd 静電チャック
US20130315795A1 (en) * 2007-12-19 2013-11-28 Applied Materials, Inc. Plasma reactor gas distribution plate with radially distributed path splitting manifold

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6108189A (en) * 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
DE19781631T1 (de) * 1997-01-02 1999-04-01 Cvc Products Inc Wärmeleitendes Spannfutter für Vakuumbearbeitungsvorrichtung
US6639783B1 (en) 1998-09-08 2003-10-28 Applied Materials, Inc. Multi-layer ceramic electrostatic chuck with integrated channel
JP3805134B2 (ja) 1999-05-25 2006-08-02 東陶機器株式会社 絶縁性基板吸着用静電チャック
JP4421874B2 (ja) 2003-10-31 2010-02-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
WO2006001425A1 (ja) 2004-06-28 2006-01-05 Kyocera Corporation 静電チャック
JP2006019534A (ja) * 2004-07-02 2006-01-19 Hitachi High-Technologies Corp プラズマ処理装置
KR20090097229A (ko) * 2008-03-11 2009-09-16 전영재 반도체 및 ｌｃｄ 제조용 정전척
US9036326B2 (en) * 2008-04-30 2015-05-19 Axcelis Technologies, Inc. Gas bearing electrostatic chuck
WO2010019430A2 (en) 2008-08-12 2010-02-18 Applied Materials, Inc. Electrostatic chuck assembly
WO2013049586A1 (en) * 2011-09-30 2013-04-04 Applied Materials, Inc. Electrostatic chuck
JP5633766B2 (ja) * 2013-03-29 2014-12-03 Toto株式会社 静電チャック
JP6796066B2 (ja) * 2014-12-11 2020-12-02 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高温ｒｆ用途のための静電チャック

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07201961A (ja) * 1993-12-20 1995-08-04 Internatl Business Mach Corp <Ibm> 静電チャック装置の製造方法
JP2003524885A (ja) * 1999-09-29 2003-08-19 東京エレクトロン株式会社 多重領域抵抗ヒータ
JP2001118915A (ja) * 1999-10-15 2001-04-27 Applied Materials Inc 内蔵チャンネルを有する多層セラミック静電チャック
JP2003249541A (ja) * 2002-02-26 2003-09-05 Hitachi High-Technologies Corp ウエハステージ
JP2005045207A (ja) * 2003-07-23 2005-02-17 Samsung Electronics Co Ltd ウエハー用静電チャック
JP2005136104A (ja) * 2003-10-29 2005-05-26 Ngk Spark Plug Co Ltd 静電チャック
US20130315795A1 (en) * 2007-12-19 2013-11-28 Applied Materials, Inc. Plasma reactor gas distribution plate with radially distributed path splitting manifold

Also Published As

Publication number Publication date
WO2020118104A1 (en) 2020-06-11
KR20210089787A (ko) 2021-07-16
US20200185247A1 (en) 2020-06-11
KR102892468B1 (ko) 2025-11-27
JP2026020182A (ja) 2026-02-06
TWI871296B (zh) 2025-02-01
CN113169111A (zh) 2021-07-23
US11031273B2 (en) 2021-06-08
TW202038374A (zh) 2020-10-16

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