KR102892468B1 - 온도에 민감한 프로세스들을 위해 열적 커플링이 개선된 정전 척 - Google Patents

온도에 민감한 프로세스들을 위해 열적 커플링이 개선된 정전 척

Info

Publication number
KR102892468B1
KR102892468B1 KR1020217020954A KR20217020954A KR102892468B1 KR 102892468 B1 KR102892468 B1 KR 102892468B1 KR 1020217020954 A KR1020217020954 A KR 1020217020954A KR 20217020954 A KR20217020954 A KR 20217020954A KR 102892468 B1 KR102892468 B1 KR 102892468B1
Authority
KR
South Korea
Prior art keywords
electrostatic chuck
dielectric body
channels
openings
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020217020954A
Other languages
English (en)
Korean (ko)
Other versions
KR20210089787A (ko
Inventor
보니 티. 치아
로스 마샬
토모하루 마츠시타
쳉-시웅 차이
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20210089787A publication Critical patent/KR20210089787A/ko
Application granted granted Critical
Publication of KR102892468B1 publication Critical patent/KR102892468B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H01L21/6833—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H01L21/324—
    • H01L21/67248—
    • H01L21/68735—
    • H01L21/68742—
    • H01L21/68785—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0471—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24F—AIR-CONDITIONING; AIR-HUMIDIFICATION; VENTILATION; USE OF AIR CURRENTS FOR SCREENING
    • F24F3/00—Air-conditioning systems in which conditioned primary air is supplied from one or more central stations to distributing units in the rooms or spaces where it may receive secondary treatment; Apparatus specially designed for such systems
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020217020954A 2018-12-07 2019-12-05 온도에 민감한 프로세스들을 위해 열적 커플링이 개선된 정전 척 Active KR102892468B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/213,816 2018-12-07
US16/213,816 US11031273B2 (en) 2018-12-07 2018-12-07 Physical vapor deposition (PVD) electrostatic chuck with improved thermal coupling for temperature sensitive processes
PCT/US2019/064772 WO2020118104A1 (en) 2018-12-07 2019-12-05 Electrostatic chuck with improved thermal coupling for temperature sensitive processes

Publications (2)

Publication Number Publication Date
KR20210089787A KR20210089787A (ko) 2021-07-16
KR102892468B1 true KR102892468B1 (ko) 2025-11-27

Family

ID=70971118

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217020954A Active KR102892468B1 (ko) 2018-12-07 2019-12-05 온도에 민감한 프로세스들을 위해 열적 커플링이 개선된 정전 척

Country Status (6)

Country Link
US (1) US11031273B2 (https=)
JP (2) JP2022511063A (https=)
KR (1) KR102892468B1 (https=)
CN (1) CN113169111A (https=)
TW (1) TWI871296B (https=)
WO (1) WO2020118104A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11229968B2 (en) * 2011-11-30 2022-01-25 Watlow Electric Manufacturing Company Semiconductor substrate support with multiple electrodes and method for making same
WO2022174919A1 (en) * 2021-02-19 2022-08-25 Applied Materials, Inc. Substrate support, method of processing a substrate, and processing system
US20230011261A1 (en) * 2021-07-09 2023-01-12 Applied Materials, Inc. Multi-zone heater with minimum rf loss
KR102872170B1 (ko) * 2021-07-19 2025-10-15 삼성전자주식회사 반도체 장치의 제조용 장비 및 반도체 장치의 제조 방법
US20230073150A1 (en) * 2021-09-09 2023-03-09 Applied Materials, Inc. Heated lid for a process chamber
CN113903699B (zh) * 2021-09-22 2026-04-21 北京北方华创微电子装备有限公司 静电卡盘及半导体加工设备
CN118843930A (zh) * 2022-03-18 2024-10-25 朗姆研究公司 用于减少晶片背侧损伤的装置和方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005045207A (ja) * 2003-07-23 2005-02-17 Samsung Electronics Co Ltd ウエハー用静電チャック
JP2005136104A (ja) * 2003-10-29 2005-05-26 Ngk Spark Plug Co Ltd 静電チャック
JP2006019534A (ja) * 2004-07-02 2006-01-19 Hitachi High-Technologies Corp プラズマ処理装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5452510A (en) * 1993-12-20 1995-09-26 International Business Machines Corporation Method of making an electrostatic chuck with oxide insulator
US6108189A (en) * 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
DE19781631T1 (de) * 1997-01-02 1999-04-01 Cvc Products Inc Wärmeleitendes Spannfutter für Vakuumbearbeitungsvorrichtung
US6639783B1 (en) 1998-09-08 2003-10-28 Applied Materials, Inc. Multi-layer ceramic electrostatic chuck with integrated channel
JP3805134B2 (ja) 1999-05-25 2006-08-02 東陶機器株式会社 絶縁性基板吸着用静電チャック
CN1207939C (zh) * 1999-09-29 2005-06-22 东京电子株式会社 多区电阻加热器
JP2001118915A (ja) 1999-10-15 2001-04-27 Applied Materials Inc 内蔵チャンネルを有する多層セラミック静電チャック
JP3881908B2 (ja) * 2002-02-26 2007-02-14 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP4421874B2 (ja) 2003-10-31 2010-02-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
WO2006001425A1 (ja) 2004-06-28 2006-01-05 Kyocera Corporation 静電チャック
US8512509B2 (en) * 2007-12-19 2013-08-20 Applied Materials, Inc. Plasma reactor gas distribution plate with radially distributed path splitting manifold
KR20090097229A (ko) * 2008-03-11 2009-09-16 전영재 반도체 및 ｌｃｄ 제조용 정전척
US9036326B2 (en) * 2008-04-30 2015-05-19 Axcelis Technologies, Inc. Gas bearing electrostatic chuck
WO2010019430A2 (en) 2008-08-12 2010-02-18 Applied Materials, Inc. Electrostatic chuck assembly
WO2013049586A1 (en) * 2011-09-30 2013-04-04 Applied Materials, Inc. Electrostatic chuck
JP5633766B2 (ja) * 2013-03-29 2014-12-03 Toto株式会社 静電チャック
JP6796066B2 (ja) * 2014-12-11 2020-12-02 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高温ｒｆ用途のための静電チャック

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005045207A (ja) * 2003-07-23 2005-02-17 Samsung Electronics Co Ltd ウエハー用静電チャック
JP2005136104A (ja) * 2003-10-29 2005-05-26 Ngk Spark Plug Co Ltd 静電チャック
JP2006019534A (ja) * 2004-07-02 2006-01-19 Hitachi High-Technologies Corp プラズマ処理装置

Also Published As

Publication number Publication date
WO2020118104A1 (en) 2020-06-11
JP2022511063A (ja) 2022-01-28
KR20210089787A (ko) 2021-07-16
US20200185247A1 (en) 2020-06-11
JP2026020182A (ja) 2026-02-06
TWI871296B (zh) 2025-02-01
CN113169111A (zh) 2021-07-23
US11031273B2 (en) 2021-06-08
TW202038374A (zh) 2020-10-16

Similar Documents

Publication Publication Date Title
KR102892468B1 (ko) 온도에 민감한 프로세스들을 위해 열적 커플링이 개선된 정전 척
KR102243410B1 (ko) 회전가능한 가열형 정전 척
KR102516133B1 (ko) 후면 가스 공급부를 갖는 회전가능 정전 척
US12002703B2 (en) Lift pin assembly
JP6594960B2 (ja) ペデスタルの流体による熱制御
KR102383357B1 (ko) 배치대 및 기판 처리 장치
US8633423B2 (en) Methods and apparatus for controlling substrate temperature in a process chamber
US12014906B2 (en) High temperature detachable very high frequency (VHF) electrostatic chuck (ESC) for PVD chamber
EP2088616A2 (en) Substrate mounting table, substrate processing apparatus and substrate temperature control method
KR20060129279A (ko) 플라즈마 프로세싱 장치용 샤워헤드 전극 어셈블리
TWI905102B (zh) 具有多區加熱的托座
WO2021158612A1 (en) Electrostatic edge ring mounting system for substrate processing
KR20230070041A (ko) 순환 가스 채널들을 갖는 샤워헤드 조립체
US20260015712A1 (en) Detachable Mid Temp Electrostatic Chuck (ESC) for Process Chamber

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

D22 Grant of ip right intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D22-EXM-PE0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

F11 Ip right granted following substantive examination

Free format text: ST27 STATUS EVENT CODE: A-2-4-F10-F11-EXM-PR0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

U12 Designation fee paid

Free format text: ST27 STATUS EVENT CODE: A-2-2-U10-U12-OTH-PR1002 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

Q13 Ip right document published

Free format text: ST27 STATUS EVENT CODE: A-4-4-Q10-Q13-NAP-PG1601 (AS PROVIDED BY THE NATIONAL OFFICE)

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000