TWI871296B - 具有改良的熱耦合以用於熱敏感處理的靜電吸盤 - Google Patents

具有改良的熱耦合以用於熱敏感處理的靜電吸盤 Download PDF

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Publication number
TWI871296B
TWI871296B TW108144689A TW108144689A TWI871296B TW I871296 B TWI871296 B TW I871296B TW 108144689 A TW108144689 A TW 108144689A TW 108144689 A TW108144689 A TW 108144689A TW I871296 B TWI871296 B TW I871296B
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TW
Taiwan
Prior art keywords
openings
channels
electrostatic chuck
channel
dielectric
Prior art date
Application number
TW108144689A
Other languages
English (en)
Chinese (zh)
Other versions
TW202038374A (zh
Inventor
波妮Ｔ 賈
羅斯 馬歇爾
松下智治
振雄 蔡
Original Assignee
美商應用材料股份有限公司
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Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW202038374A publication Critical patent/TW202038374A/zh
Application granted granted Critical
Publication of TWI871296B publication Critical patent/TWI871296B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0471—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24F—AIR-CONDITIONING; AIR-HUMIDIFICATION; VENTILATION; USE OF AIR CURRENTS FOR SCREENING
    • F24F3/00—Air-conditioning systems in which conditioned primary air is supplied from one or more central stations to distributing units in the rooms or spaces where it may receive secondary treatment; Apparatus specially designed for such systems
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW108144689A 2018-12-07 2019-12-06 具有改良的熱耦合以用於熱敏感處理的靜電吸盤 TWI871296B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/213,816 2018-12-07
US16/213,816 US11031273B2 (en) 2018-12-07 2018-12-07 Physical vapor deposition (PVD) electrostatic chuck with improved thermal coupling for temperature sensitive processes

Publications (2)

Publication Number Publication Date
TW202038374A TW202038374A (zh) 2020-10-16
TWI871296B true TWI871296B (zh) 2025-02-01

Family

ID=70971118

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108144689A TWI871296B (zh) 2018-12-07 2019-12-06 具有改良的熱耦合以用於熱敏感處理的靜電吸盤

Country Status (6)

Country Link
US (1) US11031273B2 (https=)
JP (2) JP2022511063A (https=)
KR (1) KR102892468B1 (https=)
CN (1) CN113169111A (https=)
TW (1) TWI871296B (https=)
WO (1) WO2020118104A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11229968B2 (en) * 2011-11-30 2022-01-25 Watlow Electric Manufacturing Company Semiconductor substrate support with multiple electrodes and method for making same
WO2022174919A1 (en) * 2021-02-19 2022-08-25 Applied Materials, Inc. Substrate support, method of processing a substrate, and processing system
US20230011261A1 (en) * 2021-07-09 2023-01-12 Applied Materials, Inc. Multi-zone heater with minimum rf loss
KR102872170B1 (ko) * 2021-07-19 2025-10-15 삼성전자주식회사 반도체 장치의 제조용 장비 및 반도체 장치의 제조 방법
US20230073150A1 (en) * 2021-09-09 2023-03-09 Applied Materials, Inc. Heated lid for a process chamber
CN113903699B (zh) * 2021-09-22 2026-04-21 北京北方华创微电子装备有限公司 静电卡盘及半导体加工设备
CN118843930A (zh) * 2022-03-18 2024-10-25 朗姆研究公司 用于减少晶片背侧损伤的装置和方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07201961A (ja) * 1993-12-20 1995-08-04 Internatl Business Mach Corp <Ibm> 静電チャック装置の製造方法
JP2003524885A (ja) * 1999-09-29 2003-08-19 東京エレクトロン株式会社 多重領域抵抗ヒータ
JP2003249541A (ja) * 2002-02-26 2003-09-05 Hitachi High-Technologies Corp ウエハステージ
JP2005136104A (ja) * 2003-10-29 2005-05-26 Ngk Spark Plug Co Ltd 静電チャック

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
US6108189A (en) * 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
DE19781631T1 (de) * 1997-01-02 1999-04-01 Cvc Products Inc Wärmeleitendes Spannfutter für Vakuumbearbeitungsvorrichtung
US6639783B1 (en) 1998-09-08 2003-10-28 Applied Materials, Inc. Multi-layer ceramic electrostatic chuck with integrated channel
JP3805134B2 (ja) 1999-05-25 2006-08-02 東陶機器株式会社 絶縁性基板吸着用静電チャック
JP2001118915A (ja) 1999-10-15 2001-04-27 Applied Materials Inc 内蔵チャンネルを有する多層セラミック静電チャック
KR100541447B1 (ko) * 2003-07-23 2006-01-11 삼성전자주식회사 웨이퍼용 정전척
JP4421874B2 (ja) 2003-10-31 2010-02-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
WO2006001425A1 (ja) 2004-06-28 2006-01-05 Kyocera Corporation 静電チャック
JP2006019534A (ja) * 2004-07-02 2006-01-19 Hitachi High-Technologies Corp プラズマ処理装置
US8512509B2 (en) * 2007-12-19 2013-08-20 Applied Materials, Inc. Plasma reactor gas distribution plate with radially distributed path splitting manifold
KR20090097229A (ko) * 2008-03-11 2009-09-16 전영재 반도체 및 ｌｃｄ 제조용 정전척
US9036326B2 (en) * 2008-04-30 2015-05-19 Axcelis Technologies, Inc. Gas bearing electrostatic chuck
WO2010019430A2 (en) 2008-08-12 2010-02-18 Applied Materials, Inc. Electrostatic chuck assembly
WO2013049586A1 (en) * 2011-09-30 2013-04-04 Applied Materials, Inc. Electrostatic chuck
JP5633766B2 (ja) * 2013-03-29 2014-12-03 Toto株式会社 静電チャック
JP6796066B2 (ja) * 2014-12-11 2020-12-02 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高温ｒｆ用途のための静電チャック

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07201961A (ja) * 1993-12-20 1995-08-04 Internatl Business Mach Corp <Ibm> 静電チャック装置の製造方法
JP2003524885A (ja) * 1999-09-29 2003-08-19 東京エレクトロン株式会社 多重領域抵抗ヒータ
JP2003249541A (ja) * 2002-02-26 2003-09-05 Hitachi High-Technologies Corp ウエハステージ
JP2005136104A (ja) * 2003-10-29 2005-05-26 Ngk Spark Plug Co Ltd 静電チャック

Also Published As

Publication number Publication date
WO2020118104A1 (en) 2020-06-11
JP2022511063A (ja) 2022-01-28
KR20210089787A (ko) 2021-07-16
US20200185247A1 (en) 2020-06-11
KR102892468B1 (ko) 2025-11-27
JP2026020182A (ja) 2026-02-06
CN113169111A (zh) 2021-07-23
US11031273B2 (en) 2021-06-08
TW202038374A (zh) 2020-10-16

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