JP2022505160A - マグネシア及びその製造方法、及び高熱伝導性マグネシア組成物、これを用いたマグネシアセラミックス - Google Patents
マグネシア及びその製造方法、及び高熱伝導性マグネシア組成物、これを用いたマグネシアセラミックス Download PDFInfo
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- JP2022505160A JP2022505160A JP2021521100A JP2021521100A JP2022505160A JP 2022505160 A JP2022505160 A JP 2022505160A JP 2021521100 A JP2021521100 A JP 2021521100A JP 2021521100 A JP2021521100 A JP 2021521100A JP 2022505160 A JP2022505160 A JP 2022505160A
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- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 title claims abstract description 823
- 239000000395 magnesium oxide Substances 0.000 title claims abstract description 328
- 239000000203 mixture Substances 0.000 title claims abstract description 124
- 239000000919 ceramic Substances 0.000 title claims abstract description 79
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 63
- 239000008187 granular material Substances 0.000 claims abstract description 151
- 239000000843 powder Substances 0.000 claims abstract description 73
- 238000010438 heat treatment Methods 0.000 claims abstract description 32
- 239000003960 organic solvent Substances 0.000 claims abstract description 20
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 53
- 239000000463 material Substances 0.000 claims description 35
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 31
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 27
- 239000000945 filler Substances 0.000 claims description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 23
- 238000001035 drying Methods 0.000 claims description 16
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 13
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 13
- 239000012153 distilled water Substances 0.000 claims description 13
- 239000011363 dried mixture Substances 0.000 claims description 7
- 238000000227 grinding Methods 0.000 claims description 3
- 238000005245 sintering Methods 0.000 abstract description 23
- 238000010521 absorption reaction Methods 0.000 abstract description 15
- 238000009792 diffusion process Methods 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 68
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 22
- 230000008859 change Effects 0.000 description 22
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 20
- 238000000034 method Methods 0.000 description 20
- 239000002184 metal Substances 0.000 description 18
- 239000002994 raw material Substances 0.000 description 18
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 14
- 230000000694 effects Effects 0.000 description 14
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 14
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 14
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 12
- 229910001928 zirconium oxide Inorganic materials 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 10
- 229910044991 metal oxide Inorganic materials 0.000 description 10
- 150000004706 metal oxides Chemical class 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 8
- 238000009766 low-temperature sintering Methods 0.000 description 8
- 229910010293 ceramic material Inorganic materials 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 6
- 230000006872 improvement Effects 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 239000007858 starting material Substances 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 239000011812 mixed powder Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000007088 Archimedes method Methods 0.000 description 2
- 206010011968 Decreased immune responsiveness Diseases 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- 238000000441 X-ray spectroscopy Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000000498 ball milling Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000000844 transformation Methods 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
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Abstract
また、本発明は、MgOにドナーを添加して焼結温度を低くし、熱拡散係数を向上させる高熱伝導性マグネシア組成物、及びこれを用いたマグネシアセラミックスについて開示する。
本発明によるマグネシアの製造方法は、(a)MgO粉末にドナーと有機溶媒を添加して混合物を形成する段階;(b)前記混合物からドナーの添加されたMgOグラニュールを形成する段階;及び(c)前記ドナーの添加されたMgOグラニュールを熱処理する段階;とを含むことを特徴とする。
【選択図】図1
Description
Sink)からなっている。高熱伝導性絶縁基板と金属ヒートシンクとの間には、放熱接着剤である熱界面素材(TIM:Thermal Interface Material)が使用される。
数式2 MgO+ywt.%Nb2O5
数式3 MgO+zwt.%ZrO2
数式4 MgO+wwt.%Al2O3
(上記数式1~4におけるx、y、z、wは、0<x、y、z、w≦10.0である。)
shrinkage)が20~40%と示される。この収縮率は、MgOを用いた場合に収縮率が10~30%であるのに対して、高い収縮率差がある。
Dispersive X-Ray Spectroscopy(EDS)の分析結果及び微細構造の写真である。
数式2 MgO+ywt.%Nb2O5
数式3 MgO+zwt.%ZrO2
数式4 MgO+wwt.%Al2O3
(上記数式1~4におけるx、y、z、wは、0<x、y、z、w≦10.0である。)
キシレンを用いてアルキメデス法により測定した。
Laser flash methodを用いて測定した。(LFA 457,MicroFlash,Netzsch
Instruments Inc.,Germany)
また、上記で本発明の実施例を説明しながら本発明の構成による作用効果を明示的に記載して説明しなかったとしても、該構成によって予測可能な効果も認めるべきであることは当然である。
Heat Sink)からなっている。高熱伝導性絶縁基板と金属ヒートシンクとの間には、放熱接着剤である熱界面素材(TIM:Thermal Interface Material)が使用される。
数式2 MgO+ywt.%Nb2O5
数式3 MgO+zwt.%ZrO2
数式4 MgO+wwt.%Al2O3
(上記数式1~4におけるx、y、z、wは、0<x、y、z、w≦10.0である。)
shrinkage)が20~40%と示される。この収縮率は、MgOを用いた場合に収縮率が10~30%であるのに対して、高い収縮率差がある。
Dispersive X-Ray Spectroscopy(EDS)の分析結果及び微細構造の写真である。
数式2 MgO+ywt.%Nb2O5 ≦100wt.%
数式3 MgO+zwt.%ZrO2 ≦100wt.%
数式4 MgO+wwt.%Al2O3 ≦100wt.%
キシレンを用いてアルキメデス法により測定した。
Laser flash methodを用いて測定した。(LFA
457,MicroFlash,Netzsch Instruments Inc.,Germany)
また、上記で本発明の実施例を説明しながら本発明の構成による作用効果を明示的に記載して説明しなかったとしても、該構成によって予測可能な効果も認めるべきであることは当然である。
Claims (16)
- (a)MgO粉末にドナーと有機溶媒を添加して混合物を形成する段階;
(b)前記混合物を乾燥させる段階;
(c)前記乾燥した混合物からドナーの添加されたMgOグラニュールを形成する段階;及び、
(d)前記ドナーの添加されたMgOグラニュールを熱処理する段階;とを含み、
前記ドナーの添加されたMgOグラニュールを熱処理して、前記MgOグラニュールの表面にMgOグラニュールの内部と組成が異なる表面酸化物層を形成する、マグネシア(MgO)の製造方法。 - (a)Mg(OH)2粉末にドナーと蒸留水を添加して混合物を形成する段階;
(b)前記混合物を乾燥させる段階;
(c)前記乾燥した混合物からドナーの添加されたMg(OH)2グラニュールを形成する段階;及び、
(d)前記ドナーの添加されたMg(OH)2グラニュールを熱処理する段階;とを含み、
前記ドナーの添加されたMg(OH)2グラニュールを熱処理して、MgOグラニュールの表面にMgOグラニュールの内部と組成が異なる表面酸化物層を形成する、マグネシア(MgO)の製造方法。 - 前記(a)段階において、MgO粉末とドナーの全体100wt.%に対して、TiO2、Nb2O5、ZrO2、Ga2O3、Mn2O3、B2O3、Fe2O3、SnO2、MnO2、SiO2、V2O5、Ta2O5、Sb2O5、Y2O3、Eu2O3、Er2O3及びAl2O3のうち1種以上を含むドナーを0.01~10.0wt.%含む、
請求項1に記載のマグネシア(MgO)の製造方法。 - 前記(a)段階において、Mg(OH)2粉末とドナーの全体100wt.%に対して、TiO2、Nb2O5、ZrO2、Ga2O3、Mn2O3、B2O3、Fe2O3、SnO2、MnO2、SiO2、V2O5、Ta2O5、Sb2O5、Y2O3、Eu2O3、Er2O3及びAl2O3のうち1種以上を含むドナーを0.01~10.0wt.%含む、
請求項2に記載のマグネシア(MgO)の製造方法。 - 前記(a)段階において、0.5~72時間粉碎して混合物を形成する、
請求項1又は請求項2に記載のマグネシア(MgO)の製造方法。 - 前記(d)段階において、800~1800℃で熱処理する、
請求項1又は請求項2に記載のマグネシア(MgO)の製造方法。 - 前記表面酸化物層の内部のドナーの含量は、MgOグラニュールの内部のドナーの含量よりも高い表面酸化物層が形成される、
請求項1又は請求項2に記載のマグネシア(MgO)の製造方法。 - MgOグラニュール;及び、
前記MgOグラニュールの表面に形成された表面酸化物層;とを含み、
前記表面酸化物層の組成と、前記MgOグラニュールの内部の組成とが互いに異なるマグネシア(MgO)。 - 前記表面酸化物層の内部のドナーは、TiO2、Nb2O5、ZrO2、Ga2O3、Mn2O3、B2O3、Fe2O3、SnO2、MnO2、SiO2、V2O5、Ta2O5、Sb2O5及びAl2O3のうち1種以上を含む、
請求項8に記載のマグネシア(MgO)。 - 前記表面酸化物層の内部のドナーの含量は、MgOグラニュールの内部のドナーの含量よりも高い、
請求項8に記載のマグネシア(MgO)。 - 前記マグネシアは、TiO2とNb2O5を含み、
下記数式6を満たす、
請求項8に記載のマグネシア(MgO)。
数式6 MgO+xwt.%TiO2+ywt.%Nb2O5
(上記数式(6)におけるx、yは、0<x、y≦2.0である。) - 前記マグネシア(MgO)は、熱界面素材用セラミックフィラーである、
請求項8に記載のマグネシア(MgO)。 - MgO基地内にTiO2、Nb2O5、ZrO2又はAl2O3を含み、
下記数式1、数式2、数式3又は数式4を満たすマグネシア(MgO)組成物。
数式1 MgO+xwt.%TiO2
数式2 MgO+ywt.%Nb2O5
数式3 MgO+zwt.%ZrO2
数式4 MgO+wwt.%Al2O3
(上記数式1~4におけるx、y、z、wは、0<x、y、z、w≦10.0である。) - 上記数式1におけるxは、0<x≦10.0であり
上記数式2におけるyは、0<y≦5.0であり、
上記数式3におけるzは、0<z≦4.0であり、
上記数式4におけるwは、0<w≦0.8を満たす、
請求項13に記載のマグネシア(MgO)組成物。 - 上記数式2におけるyは、0<y≦1.0を満たす、
請求項13に記載のマグネシア(MgO)組成物。 - 下記数式5を満たす、
請求項13に記載のマグネシア(MgO)組成物。
数式5 MgO+0.3wt.%TiO2+0.3wt.%Nb2O5+zwt.%ZrO2
(上記数式5におけるzは、0<z≦0.05である。)
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JPS63307107A (ja) * | 1987-06-09 | 1988-12-14 | Asahi Glass Co Ltd | 高熱伝導性マグネシア質粉末 |
JPS6419606A (en) * | 1987-07-14 | 1989-01-23 | Asahi Glass Co Ltd | Insulation base plate |
JP2007284314A (ja) * | 2006-04-19 | 2007-11-01 | Nitsukatoo:Kk | 耐食性マグネシア質焼結体、それよりなる熱処理用部材および前記焼結体の製造方法 |
JP2017122029A (ja) * | 2016-01-07 | 2017-07-13 | 協和化学工業株式会社 | 成長速度が遅くアスペクト比が低い水酸化マグネシウム粒子およびその製造方法 |
JP2018501178A (ja) * | 2014-11-10 | 2018-01-18 | サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド | 焼結セラミック構成要素及びその形成方法 |
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JPS63307107A (ja) * | 1987-06-09 | 1988-12-14 | Asahi Glass Co Ltd | 高熱伝導性マグネシア質粉末 |
JPS6419606A (en) * | 1987-07-14 | 1989-01-23 | Asahi Glass Co Ltd | Insulation base plate |
JP2007284314A (ja) * | 2006-04-19 | 2007-11-01 | Nitsukatoo:Kk | 耐食性マグネシア質焼結体、それよりなる熱処理用部材および前記焼結体の製造方法 |
JP2018501178A (ja) * | 2014-11-10 | 2018-01-18 | サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド | 焼結セラミック構成要素及びその形成方法 |
JP2017122029A (ja) * | 2016-01-07 | 2017-07-13 | 協和化学工業株式会社 | 成長速度が遅くアスペクト比が低い水酸化マグネシウム粒子およびその製造方法 |
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US20210317043A1 (en) | 2021-10-14 |
WO2020122684A1 (ko) | 2020-06-18 |
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