JP2022502844A - 磁気トンネル接合部への上部接点を形成する方法 - Google Patents
磁気トンネル接合部への上部接点を形成する方法 Download PDFInfo
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- JP2022502844A JP2022502844A JP2021516416A JP2021516416A JP2022502844A JP 2022502844 A JP2022502844 A JP 2022502844A JP 2021516416 A JP2021516416 A JP 2021516416A JP 2021516416 A JP2021516416 A JP 2021516416A JP 2022502844 A JP2022502844 A JP 2022502844A
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- H—ELECTRICITY
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Abstract
Description
Claims (15)
- 第1の接触層上に磁気トンネル接合構造体を形成することと、
前記磁気トンネル接合構造体の上部及び側部へ封入層を堆積させることと、
化学機械平坦化プロセスによって、前記磁気トンネル接合の前記上部に配置された前記封入層を除去して、前記磁気トンネル接合構造体の前記上部を露出させることと、
前記磁気トンネル接合構造体上に第2の接触層を堆積させること
を含む方法。 - 前記磁気トンネル接合構造体が、第1の磁性層、第2の磁性層、及び前記第1の磁性層と前記第2の磁性層との間に配置された非磁性層を含む、請求項1に記載の方法。
- 前記磁気トンネル接合が、前記第2の磁性層上に配置されたキャップ層をさらに含む、請求項2に記載の方法。
- 前記封入層が、窒化ケイ素、窒化炭化ケイ素、二酸化ケイ素、オキシ窒化ケイ素、炭化ケイ素、アモルファスカーボン、オキシ炭化ケイ素、酸化アルミニウム、又は窒化アルミニウム(AlN)を含む、請求項1に記載の方法。
- 前記第2の接触層が、銅、コバルト、タングステン、タンタル、窒化タンタル、チタン、窒化チタン、又は窒化タングステンを含む、請求項1に記載の方法。
- 第1の接触層上に磁気トンネル接合構造体を形成することと、
前記磁気トンネル接合構造体の上部及び側部へ封入層を堆積させることと、
前記封入層上に誘電体材料を堆積させることと、
化学機械平坦化プロセスによって、前記磁気トンネル接合の前記上部に配置された前記誘電体材料及び前記封入層を除去して、前記磁気トンネル接合構造体の前記上部を露出させることと、
前記磁気トンネル接合構造体上に第2の接触層を堆積させること
を含む方法。 - 前記磁気トンネル接合構造体が、第1の磁性層、第2の磁性層、及び前記第1の磁性層と前記第2の磁性層との間に配置された非磁性層を含む、請求項6に記載の方法。
- 前記非磁性層が、MgO、HfO2、TiO2、Ta2O5、又はAl2O3を含む、請求項7に記載の方法。
- 前記非磁性層が、銅、銀、モリブデン、タンタル、又はタングステンを含む、請求項7に記載の方法。
- 前記磁気トンネル接合が、前記第2の磁性層上に配置されたキャップ層をさらに含む、請求項7に記載の方法。
- 前記キャップ層が、ルテニウム、イリジウム、タンタル、タングステン、チタン、窒化タンタル、窒化タングステン、窒化チタン、又は酸化マグネシウムを含む、請求項10に記載の方法。
- 前記封入層が、窒化ケイ素、窒化炭化ケイ素、二酸化ケイ素、オキシ窒化ケイ素、炭化ケイ素、アモルファスカーボン、オキシ炭化ケイ素、酸化アルミニウム、又は窒化アルミニウム(AlN)を含む、請求項6に記載の方法。
- 前記誘電体材料が、酸化物を含む、請求項6に記載の方法。
- 第1の接触層上に磁気トンネル接合構造体を形成することと、
前記磁気トンネル接合構造体の上部及び側部へ封入層を堆積させることであって、当該封入層が、窒化炭化ケイ素を含む、封入層を堆積させることと、
前記封入層上に誘電体材料を堆積させることと、
前記誘電体材料の一部及び前記封入層の一部を除去して、ビア及び前記ビア上のトレンチを形成することであって、前記磁気トンネル接合構造体の前記上部が露出させられる、ビア及び前記ビア上のトレンチを形成すること
前記トレンチ及び前記ビアにおいて第2の接触層を堆積させること
を含む方法。 - 前記磁気トンネル接合構造体が、第1の磁性層、第2の磁性層、及び前記第1の磁性層と前記第2の磁性層との間に配置された非磁性層を含む、請求項14に記載の方法。
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US16/141,470 US11374170B2 (en) | 2018-09-25 | 2018-09-25 | Methods to form top contact to a magnetic tunnel junction |
US16/141,470 | 2018-09-25 | ||
PCT/US2019/048134 WO2020068327A1 (en) | 2018-09-25 | 2019-08-26 | Methods to form top contact to a magnetic tunnel junction |
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US (1) | US11374170B2 (ja) |
JP (1) | JP7196289B2 (ja) |
KR (1) | KR102512245B1 (ja) |
CN (1) | CN112740431A (ja) |
TW (1) | TWI835859B (ja) |
WO (1) | WO2020068327A1 (ja) |
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US10923652B2 (en) | 2019-06-21 | 2021-02-16 | Applied Materials, Inc. | Top buffer layer for magnetic tunnel junction application |
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US20200098981A1 (en) | 2020-03-26 |
KR20210052558A (ko) | 2021-05-10 |
CN112740431A (zh) | 2021-04-30 |
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TW202025526A (zh) | 2020-07-01 |
JP7196289B2 (ja) | 2022-12-26 |
WO2020068327A1 (en) | 2020-04-02 |
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US11374170B2 (en) | 2022-06-28 |
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