JP2022179747A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2022179747A JP2022179747A JP2022165010A JP2022165010A JP2022179747A JP 2022179747 A JP2022179747 A JP 2022179747A JP 2022165010 A JP2022165010 A JP 2022165010A JP 2022165010 A JP2022165010 A JP 2022165010A JP 2022179747 A JP2022179747 A JP 2022179747A
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Abstract
Description
6 基板(半導体基板)
7 主面絶縁層
8 封止絶縁層
9 基板の第1基板主面
10 基板の第2基板主面
12 封止絶縁層の第1封止主面
14 封止絶縁層の封止側面
15 ゲート外部端子
16 ソース外部端子
17 ソースセンス外部端子
18 ドレイン外部端子
20 配線層
21 MISFETチップ
24 MISFETチップのチップ本体
25 MISFETチップの第1チップ主面
26 MISFETチップの第2チップ主面
28 MISFETチップのゲート端子電極層
29 MISFETチップのソース端子電極層
30 MISFETチップのソースセンス端子電極層
31 MISFETチップのドレイン端子電極層
33 ゲートパッド開口
34 ソースパッド開口
35 ソースセンスパッド開口
36 ドレインパッド開口
40 ゲート外部端子のゲート柱状電極層
41 ゲート外部端子のゲート接続部
42 ソース外部端子のソース柱状電極層
43 ソース外部端子のソース接続部
44 ソースセンス外部端子のソースセンス柱状電極層
45 ソースセンス外部端子のソースセンス接続部
46 ドレイン外部端子のドレイン柱状電極層
47 ドレイン外部端子のドレイン接続部
61 電子部品
62 ゲート外部端子のゲート導電接合層
63 ソース外部端子のソース導電接合層
64 ソースセンス外部端子のソースセンス導電接合層
65 ドレイン外部端子のドレイン導電接合層
71 電子部品
72 ゲート外部端子のゲート電極膜
73 ゲート外部端子のゲート導電接合層
74 ゲート外部端子の被覆部
75 ソース外部端子のソース電極膜
76 ソース外部端子のソース導電接合層
77 ソース外部端子の被覆部
78 ソースセンス外部端子のソースセンス電極膜
79 ソースセンス外部端子のソースセンス導電接合層
80 ソースセンス外部端子の被覆部
81 ドレイン外部端子のドレイン電極膜
82 ドレイン外部端子のレイン導電接合層
83 ドレイン外部端子の被覆部
91 電子部品
92 放熱構造
93 フィン構造
101 電子部品
102 放熱構造
103 放熱部材
111 電子部品
112 ダイオードチップ
113 ダイオードチップのチップ本体
114 ダイオードチップの第1チップ主面
115 ダイオードチップの第2チップ主面
117 ダイオードチップのカソード端子電極層
118 ダイオードチップのアノード端子電極層
120 カソードパッド開口
121 アノードパッド開口
122 カソード外部端子
123 アノード外部端子
124 カソード外部端子のカソード柱状電極層
125 カソード外部端子のカソード接続部
126 アノード外部端子のアノード柱状電極層
127 アノード外部端子のアノード接続部
131 電子部品
132 ICチップ
133 第1配線層
134 第2配線層
135 第3配線層
136 入力外部端子
141 ICチップのチップ本体
142 ICチップの第1チップ主面
143 ICチップの第2チップ主面
145 ICチップの出力端子電極層
146 ICチップの入力端子電極層
148 中間絶縁層
161 第1接続配線層
162 第2接続配線層
163 第3接続配線層
181 電子部品
Claims (29)
- 一方側の第1主面および他方側の第2主面を有する半導体基板と、
前記第1主面を被覆する主面絶縁層と、
前記主面絶縁層の上に配置された第1チップであって、前記主面絶縁層側の第1裏面および前記第1裏面とは反対側の第1表面を有し、前記第1表面側に配置された少なくとも1つの第1電極を含む前記第1チップと、
前記第1チップから間隔を空けて前記主面絶縁層の上に配置された第2チップであって、前記主面絶縁層側の第2裏面および前記第2裏面とは反対側の第2表面を有し、前記第2裏面側に配置された第2電極を含む前記第2チップと、
前記半導体基板の上で前記第1チップの前記第1表面側の前記第1電極および前記第2チップの前記第2裏面側の前記第2電極を電気的に接続する接続配線と、
前記半導体基板の上で前記第1チップ、前記第2チップおよび前記接続配線を封止する封止絶縁層と、を含む、半導体装置。 - 前記封止絶縁層は、前記半導体基板の前記第2主面を露出させている、請求項1に記載の半導体装置。
- 前記半導体基板は、前記第1主面および前記第2主面を接続する側面を有し、
前記封止絶縁層は、前記半導体基板の前記側面を露出させている、請求項1または2に記載の半導体装置。 - 前記封止絶縁層は、前記半導体基板の前記側面に対して面一に形成された封止側面を有している、請求項3に記載の半導体装置。
- 前記封止絶縁層は、前記半導体基板の厚さよりも小さい厚さを有している、請求項1~4のいずれか一項に記載の半導体装置。
- 前記主面絶縁層は、前記第1チップの厚さおよび前記第2チップの厚さの双方よりも小さい厚さを有している、請求項1~5のいずれか一項に記載の半導体装置。
- 前記主面絶縁層は、0.1μm以上100μm以下の厚さを有している、請求項1~6のいずれか一項に記載の半導体装置。
- 前記半導体基板は、シリコン基板、炭化シリコン基板、サファイア基板または窒化物半導体基板を含む、請求項1~7のいずれか一項に記載の半導体装置。
- 前記主面絶縁層は、酸化シリコン層、窒化シリコン層、酸窒化シリコン層、酸化アルミニウム層、窒化アルミニウム層および酸窒化アルミニウム層のうちの少なくとも1つを含む、請求項1~8のいずれか一項に記載の半導体装置。
- 前記第1チップは、シリコン、炭化シリコンおよび窒化物半導体のうちの少なくとも1つを含む第1チップ本体を含む、請求項1~9のいずれか一項に記載の半導体装置。
- 前記第2チップは、シリコン、炭化シリコンおよび窒化物半導体のうちの少なくとも1つを含む第2チップ本体を含む、請求項1~10のいずれか一項に記載の半導体装置。
- 前記主面絶縁層の上に配置された第1配線と、
前記第1配線から間隔を空けて前記主面絶縁層の上に配置された第2配線と、をさらに含み、
前記第1チップは、前記第1配線の上に配置され、
前記第2チップは、前記第2配線の上に配置されている、請求項1~11のいずれか一項に記載の半導体装置。 - 前記第2チップの前記第2電極は、前記第2配線に電気的に接続され、
前記接続配線は、前記第2配線に電気的に接続され、前記第2配線を介して前記第2チップに電気的に接続されている、請求項12に記載の半導体装置。 - 前記第1チップおよび前記第2チップを選択的に被覆する中間絶縁層をさらに含み、
前記接続配線は、前記中間絶縁層の上に配置され、
前記封止絶縁層は、前記接続配線を挟んで前記中間絶縁層を被覆している、請求項1~13のいずれか一項に記載の半導体装置。 - 前記第1主面に沿って延びる封止主面を有する前記封止絶縁層と、
前記封止絶縁層を貫通して前記封止主面から露出するように前記第1主面の法線方向に沿って柱状に延びる少なくとも1つの外部端子と、をさらに含む、請求項1~14のいずれか一項に記載の半導体装置。 - 前記第1チップは、前記第1表面側に形成された回路素子、および、前記回路素子に電気的に接続された少なくとも1つの前記第1電極を有し、
前記外部端子は、少なくとも1つの前記第1電極を介して前記回路素子に電気的に接続された少なくとも1つのチップ側外部端子を含む、請求項15に記載の半導体装置。 - 前記第1チップは、複数の前記第1電極を含み、
複数の前記チップ側外部端子が、複数の前記第1電極に電気的に接続されている、請求項16に記載の半導体装置。 - 前記外部端子は、前記接続配線に電気的に接続された接続配線側外部端子を含む、請求項15~17のいずれか一項に記載の半導体装置。
- 前記外部端子は、前記封止絶縁層を貫通して前記封止主面から露出するように前記法線方向に柱状に延びる柱状電極、および、前記柱状電極の上に配置された導電接合層を含む、請求項15~18のいずれか一項に記載の半導体装置。
- 前記導電接合層の全体が、前記封止主面から露出している、請求項19に記載の半導体装置。
- 前記柱状電極は、前記封止主面に対して面一に形成された電極面を有している、請求項19または20に記載の半導体装置。
- 前記封止絶縁層は、前記封止主面に形成された複数の開口を有し、
前記外部端子は、前記開口の壁面を膜状に被覆する電極膜、および、前記電極膜の上に配置された導電接合層を含む、請求項15~18のいずれか一項に記載の半導体装置。 - 前記電極膜は、前記開口から前記封止主面の上に引き出された被覆部を含み、
前記導電接合層は、前記電極膜を挟んで前記開口に埋設され、前記開口外において前記被覆部を挟んで前記封止主面を被覆する部分を有している、請求項22に記載の半導体装置。 - 前記半導体基板の前記第2主面側に設けられ、前記半導体基板の熱を外部に放散させる放熱構造をさらに含む、請求項1~23のいずれか一項に記載の半導体装置。
- 前記放熱構造は、前記第2主面に形成されたフィン構造を含む、請求項24に記載の半導体装置。
- 前記放熱構造は、前記第2主面を被覆する放熱部材を含む、請求項24または25に記載の半導体装置。
- 前記第1チップは、MISFETまたはIGBTを含む、請求項1~26のいずれか一項に記載の半導体装置。
- 前記第2チップは、前記第1チップ用のダイオードまたは前記第1チップ用の制御回路を含む、請求項1~27のいずれか一項に記載の半導体装置。
- 前記第1チップは、600V以上の耐圧を有している、請求項1~28のいずれか一項に記載の半導体装置。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06252300A (ja) * | 1992-12-28 | 1994-09-09 | Hitachi Ltd | 冷却装置を備えた集積回路チップ及びその製造方法 |
JP2001223321A (ja) * | 1999-11-29 | 2001-08-17 | Matsushita Electric Ind Co Ltd | 半導体パッケージ及び半導体パッケージの製造方法 |
JP2005079431A (ja) * | 2003-09-02 | 2005-03-24 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP2007103716A (ja) * | 2005-10-05 | 2007-04-19 | Sony Corp | 半導体装置及びその製造方法 |
JP2016195178A (ja) * | 2015-03-31 | 2016-11-17 | アイシン・エィ・ダブリュ株式会社 | 半導体モジュール |
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06252300A (ja) * | 1992-12-28 | 1994-09-09 | Hitachi Ltd | 冷却装置を備えた集積回路チップ及びその製造方法 |
JP2001223321A (ja) * | 1999-11-29 | 2001-08-17 | Matsushita Electric Ind Co Ltd | 半導体パッケージ及び半導体パッケージの製造方法 |
JP2005079431A (ja) * | 2003-09-02 | 2005-03-24 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JP2007103716A (ja) * | 2005-10-05 | 2007-04-19 | Sony Corp | 半導体装置及びその製造方法 |
JP2016195178A (ja) * | 2015-03-31 | 2016-11-17 | アイシン・エィ・ダブリュ株式会社 | 半導体モジュール |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024127935A1 (ja) * | 2022-12-14 | 2024-06-20 | ローム株式会社 | 半導体装置、半導体モジュール、および半導体装置の製造方法 |
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