JP2022161979A5 - - Google Patents

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Publication number
JP2022161979A5
JP2022161979A5 JP2022128939A JP2022128939A JP2022161979A5 JP 2022161979 A5 JP2022161979 A5 JP 2022161979A5 JP 2022128939 A JP2022128939 A JP 2022128939A JP 2022128939 A JP2022128939 A JP 2022128939A JP 2022161979 A5 JP2022161979 A5 JP 2022161979A5
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JP
Japan
Prior art keywords
plasma
silicon
containing film
film
source
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JP2022128939A
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English (en)
Japanese (ja)
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JP2022161979A (ja
JP7485732B2 (ja
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Priority claimed from US16/433,585 external-priority patent/US12221692B2/en
Priority claimed from JP2020568739A external-priority patent/JP7125515B2/ja
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Publication of JP2022161979A publication Critical patent/JP2022161979A/ja
Publication of JP2022161979A5 publication Critical patent/JP2022161979A5/ja
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Publication of JP7485732B2 publication Critical patent/JP7485732B2/ja
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JP2022128939A 2018-06-11 2022-08-12 組成物、及びケイ素含有膜の堆積のための組成物を使用する方法 Active JP7485732B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862683142P 2018-06-11 2018-06-11
US62/683,142 2018-06-11
US16/433,585 2019-06-06
US16/433,585 US12221692B2 (en) 2016-02-26 2019-06-06 Compositions and methods using same for deposition of silicon-containing film
JP2020568739A JP7125515B2 (ja) 2018-06-11 2019-06-11 組成物、及びケイ素含有膜の堆積のための組成物を使用する方法

Related Parent Applications (1)

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JP2020568739A Division JP7125515B2 (ja) 2018-06-11 2019-06-11 組成物、及びケイ素含有膜の堆積のための組成物を使用する方法

Publications (3)

Publication Number Publication Date
JP2022161979A JP2022161979A (ja) 2022-10-21
JP2022161979A5 true JP2022161979A5 (https=) 2023-01-20
JP7485732B2 JP7485732B2 (ja) 2024-05-16

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ID=68764690

Family Applications (2)

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JP2020568739A Active JP7125515B2 (ja) 2018-06-11 2019-06-11 組成物、及びケイ素含有膜の堆積のための組成物を使用する方法
JP2022128939A Active JP7485732B2 (ja) 2018-06-11 2022-08-12 組成物、及びケイ素含有膜の堆積のための組成物を使用する方法

Family Applications Before (1)

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JP2020568739A Active JP7125515B2 (ja) 2018-06-11 2019-06-11 組成物、及びケイ素含有膜の堆積のための組成物を使用する方法

Country Status (8)

Country Link
EP (1) EP3802913A4 (https=)
JP (2) JP7125515B2 (https=)
KR (1) KR102549427B1 (https=)
CN (1) CN112292479A (https=)
IL (1) IL279250B2 (https=)
SG (1) SG11202011890XA (https=)
TW (2) TWI720506B (https=)
WO (1) WO2019241183A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11776846B2 (en) * 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
JP7754923B2 (ja) 2020-09-30 2025-10-15 ジェレスト, インコーポレイテッド 炭化ケイ素薄膜及びその蒸着方法
CN115747761A (zh) * 2022-12-07 2023-03-07 拓荆科技(上海)有限公司 一种薄膜固化方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6436824B1 (en) * 1999-07-02 2002-08-20 Chartered Semiconductor Manufacturing Ltd. Low dielectric constant materials for copper damascene
JP2007184611A (ja) 2001-01-22 2007-07-19 Tokyo Electron Ltd プラズマ処理装置およびプラズマ処理方法
US7491658B2 (en) * 2004-10-13 2009-02-17 International Business Machines Corporation Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality
US9245739B2 (en) * 2006-11-01 2016-01-26 Lam Research Corporation Low-K oxide deposition by hydrolysis and condensation
US7867923B2 (en) * 2007-10-22 2011-01-11 Applied Materials, Inc. High quality silicon oxide films by remote plasma CVD from disilane precursors
US20130217240A1 (en) * 2011-09-09 2013-08-22 Applied Materials, Inc. Flowable silicon-carbon-nitrogen layers for semiconductor processing
WO2015105633A1 (en) * 2014-01-13 2015-07-16 Applied Materials, Inc. Carbon dioxide and carbon monoxide mediated curing of low k films to increase hardness and modulus
SG11201703196WA (en) * 2014-10-24 2017-05-30 Versum Materials Us Llc Compositions and methods using same for deposition of silicon-containing films
JP6845252B2 (ja) * 2015-12-21 2021-03-17 バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー ケイ素含有膜の堆積のための組成物及びそれを用いた方法
WO2017147150A1 (en) * 2016-02-26 2017-08-31 Versum Materials Us, Llc Compositions and methods using same for deposition of silicon-containing film
KR102259262B1 (ko) 2016-07-19 2021-05-31 어플라이드 머티어리얼스, 인코포레이티드 유동성 실리콘-함유 막들의 증착
US11735413B2 (en) * 2016-11-01 2023-08-22 Versum Materials Us, Llc Precursors and flowable CVD methods for making low-k films to fill surface features
US20180148833A1 (en) * 2016-11-25 2018-05-31 Applied Materials, Inc. Methods for depositing flowable silicon containing films using hot wire chemical vapor deposition

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