JP2022160588A - Iii族金属窒化物結晶およびその形成方法 - Google Patents
Iii族金属窒化物結晶およびその形成方法 Download PDFInfo
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- JP2022160588A JP2022160588A JP2022125589A JP2022125589A JP2022160588A JP 2022160588 A JP2022160588 A JP 2022160588A JP 2022125589 A JP2022125589 A JP 2022125589A JP 2022125589 A JP2022125589 A JP 2022125589A JP 2022160588 A JP2022160588 A JP 2022160588A
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- metal nitride
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- 238000000034 method Methods 0.000 title abstract description 114
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- 239000012535 impurity Substances 0.000 claims description 12
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- 229910052794 bromium Inorganic materials 0.000 claims description 5
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
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- OUCSEDFVYPBLLF-KAYWLYCHSA-N 5-(4-fluorophenyl)-1-[2-[(2r,4r)-4-hydroxy-6-oxooxan-2-yl]ethyl]-n,4-diphenyl-2-propan-2-ylpyrrole-3-carboxamide Chemical compound C=1C=CC=CC=1C1=C(C=2C=CC(F)=CC=2)N(CC[C@H]2OC(=O)C[C@H](O)C2)C(C(C)C)=C1C(=O)NC1=CC=CC=C1 OUCSEDFVYPBLLF-KAYWLYCHSA-N 0.000 claims 1
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
- C30B7/105—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes using ammonia as solvent, i.e. ammonothermal processes
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
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Abstract
Description
上記から、結晶成長を向上させるための技術が強く望まれていることが分かる。
本明細書および添付図面を参照すれば、本開示の本質および利点についてのさらなる理解を得ることができる。
et al., Microelectronics Reliability, 2003, 43(12), 1987~1991)。高出力用途では、GaNデバイスにおいて効率が低下することがあり、電流密度が上昇する(ドループとして知られている)。転位密度とLEDにおけるドループの大きさとの間には、相関があることが示されている(Schubert
et al., Applied Physics Letters, 2007, 91(23), 231114)。GaNレーザダイオードの場合、転位密度と平均故障時間(MTTF)との間に負の相関があることが文献によって多く確認されている(Tomiya
et al., IEEE Journal of Selected Topics in Quantum Electronics, 2004, 10(6),
1277~1286)。このような負の相関は、転位に沿った不純物拡散に起因すると考えられる(Orita
et al., IEEE International Reliability Physics Symposium Proceedings, 2009, 736~740)。電子デバイスの場合、転位が漏れ電流を大幅に上昇させることが分かっており(Kaun
et al., Applied Physics Express, 2011, 4(2), 024101)、また、HEMT構造ではデバイス寿命が低下する(Tapajna
et al., Applied Physics Letters, 2011, 99(22), 223501~223503)。エピタキシャル薄膜成長用基板材料としてバルクGaNを用いることによる主な利点の1つとして、膜中の貫通転位密度が大幅に低下する点がある。そのため、バルクGaN基板中の転位密度は、デバイス効率および信頼性に大きな影響を与える。
et al., Journal of Crystal Growth, 2008, 310(5), 959~965)。このような格子不整合は、0.001Aのオーダであり、2.5×10-4のオーダの歪みに相当する。HVPEGaNとアモノサーマルGaNとの間の格子不整合はより大きく(例えば、ほぼ0.003A)、8×10-4のオーダの歪みに相当する。これらの歪みレベルは小さくみえるかもしれないものの、より小さな値であっても、Matthews-Blakeslee臨界厚さに換算すると、わずか約0.8マイクロメートルになる。この厚さを超えた場合、そうなるためのエネルギー的に許容できない機構が存在すれば、バルクオンHVPEGaN層構造は転位形成に起因してエネルギーが低減することがある。転位生成によるエネルギー緩和が不可能である場合、より肉厚の層においては、亀裂形成に起因して緩和が発生することがある。Matthews-Klokholm公式を用いると、亀裂の発生することがある臨界厚さは、550°CでHVPEGaN上に成長させたアモノサーマル膜の場合、実際の歪みに応じて3~10マイクロメートルである。例えば、約0.1ミリメートルより肉厚の層、約0.2ミリメートルの肉厚の層、約0.5ミリメートルより肉厚の層、約1ミリメートルより肉厚の層、約2ミリメートルより肉厚の層、または約5ミリメートルより肉厚の層の場合、HVPEGaN種晶上のアモノサーマルGaN層に亀裂が発生することがある。
この狭いXRCFWHM値は、気相成長法によって成長したLEO構造の場合に深刻になるウイングチルトは数度までの傾斜であるのに対し、このアモノサーマル横方向エピタキシャル過成長プロセスを用いた場合はウイングチルトが極めて小さいことを示している。
102 大面積表面
103 フォトレジスト層
111 パターンマスク層
219 接合面
413 自立のアモノサーマルIII族金属窒化物ブール
431 自立のアモノサーマルIII族金属窒化物ウェーハ
Claims (1)
- ウルツ鉱結晶構造を有し、第1の表面と該第1の表面に対向する第2の表面を含む、第III族金属と窒素を含む第III族金属窒化物結晶と、
前記第1の表面の少なくとも一部を覆う、少なくとも1つのn型エピタキシャル層、少なくとも1つのAlInGaNエピタキシャル層、および、少なくとも1つのp型エピタキシャル層と、
前記p型エピタキシャル層の少なくとも一部上に配置された、p型電極と、
n型電極と、
を含むデバイスであって、
前記第2の表面は、103cm-1未満の積層欠陥の平均密度と、1017cm-3より高い不純物Hの濃度と、1015cm-3より高いLi、Na、K、F、Cl、BrおよびIのうちの少なくとも1つの不純物の濃度とを有し、
前記第2の表面は、複数の第1の領域を有し、該複数の第1の領域の各々が、5cm-1~105cm-1の間の密度を有する貫通転位の局所的に略線状のアレイを含み、
前記第2の表面は、更に複数の第2の領域を含み、該複数の第2の領域の各々は、前記複数の第1の領域の隣接するペアの間に配置され、105cm-2未満の密度の貫通転位と、103cm-1未満の密度の積層欠陥を有し、
前記第2の表面は、更に複数の第3の領域を含み、該複数の第3の領域の各々は、前記第2の領域の内の1つの中、または、前記第2の領域の隣接するペアの領域の間に配置され、10マイクロメートルと500マイクロメートルとの間の範囲の最小寸法を有し、かつ、前記第2の領域の貫通転位密度よりも1桁以上高い貫通転位の密度を有することを特徴とするデバイス。
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