JP2022137282A - ウエハエッジにおける方位角方向の厚さの均一性を向上させるためのポケット内ウエハのセンタリング - Google Patents
ウエハエッジにおける方位角方向の厚さの均一性を向上させるためのポケット内ウエハのセンタリング Download PDFInfo
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- JP2022137282A JP2022137282A JP2022115978A JP2022115978A JP2022137282A JP 2022137282 A JP2022137282 A JP 2022137282A JP 2022115978 A JP2022115978 A JP 2022115978A JP 2022115978 A JP2022115978 A JP 2022115978A JP 2022137282 A JP2022137282 A JP 2022137282A
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Abstract
Description
本願では、単語「半導体ウエハ」、「ウエハ」、「基板」、「ウエハ基板」、および「半製品の集積回路」は、ほぼ同じ意味で用いられる。当業者は、「半製品の集積回路」との単語が、その集積回路製造の多くの段階のいずれかにおけるシリコンウエハを示しうることを理解するだろう。半導体装置産業において用いられるウエハまたは基板は、通常、200mm、300mm、または450mmの直径を有する。以下の詳細な説明は、本発明がウエハ上で実施されると仮定するが、本発明はそれに限定されない。ワークピースは、様々な形、サイズ、および材料であってよい。半導体ウエハに加えて、本発明を利用してよい他のワークピースは、プリント回路基板、磁気記録媒体、磁気記録センサ、ミラー、光学素子、マイクロメカニカルデバイスなどの様々な物品を含む。
ウエハが台座のウエハ対向面から2ミル(0.0508ミリ)延びるウエハ支持部上に降ろされ、ウエハがウエハ支持部上に降ろされている間のチャンバ圧が0.5Torrである標準的なウエハ設置動作と比較すると、低圧ウエハ設置動作では、ウエハ支持部は、ウエハ対向面から4ミル(0.1016ミリ)延び、チャンバ圧は0.5Torr未満、好ましくは、0.1Torr以下でありうる。次の表は、膜厚の均一性およびウエハの位置ずれの比較を示し、「MCA」は最小接触面積ピンを、NU%は、ウエハのエッジから最大1.8mmの極性パターンで集められた73地点にわたって測定された最大膜厚(Tmax)および最小膜厚(Tmin)を測定することによって、NU%=(Tmax-Tmin)/2を用いて決定された不均一率を示す。
[適用例1]ウエハ上への成膜時における前記ウエハの位置ずれを低減させる方法であって、
前記ウエハが、前記ウエハの外縁部とポケットの壁との間に隙間を伴って、処理チャンバ内でチャックレス台座のウエハ対向面上のウエハ支持部の上方にあるように、前記ウエハをリフトピン上またはキャリアリング上に支持し、
前記ウエハが前記ウエハ支持部の上方にある状態で前記ウエハを前記リフトピンまたはキャリアリング上に支持しながら、前記ウエハが前記台座の前記ウエハ対向面から延びるウエハ支持部上に設置されたときに、前記ウエハの位置ずれを低減させるのに有効な減圧状態まで前記処理チャンバをポンプアウトし、
前記処理チャンバが前記減圧状態にある間に前記ウエハが前記ウエハ支持部上に降ろされるように、前記リフトピンまたは前記キャリアリングを降ろし、前記ウエハ上への成膜時の前記ポケットにおける横ずれを低減させるために、前記ウエハを前記チャックレス台座の前記ウエハ対向面の上方の十分な距離に支持し、
前記ウエハが前記ウエハ支持部上に支持されている間に前記ウエハ上に成膜し、
前記成膜後の前記ウエハの初期位置から中心を外れた位置ずれは、400ミクロン未満である、方法。
[適用例2]適用例1に記載の方法であって、
前記成膜後の前記ウエハの初期位置から中心を外れた位置ずれは、200ミクロン未満である、方法。
[適用例3]適用例1に記載の方法であって、
前記減圧状態は、0.5Torr未満である、方法。
[適用例4]ウエハ上への成膜時における前記ウエハの位置ずれを低減させる方法であって、
前記ウエハを処理チャンバ内でチャックレス台座のウエハ対向面の上方に支持し、
前記ウエハが前記台座の前記ウエハ対向面から延びるウエハ支持部上に設置されたときに、前記ウエハの位置ずれを低減させるのに有効な減圧状態まで前記処理チャンバをポンプアウトし、
前記処理チャンバが前記減圧状態にある間に前記ウエハを前記ウエハ支持部上に降ろし、前記ウエハ上への成膜時における位置ずれを低減させるために、前記ウエハを前記チャックレス台座の前記ウエハ対向面の上方の十分な距離に支持し、
前記ウエハが前記ウエハ支持部上に支持されている間に前記ウエハ上に成膜し、
前記成膜後の前記ウエハの初期位置から中心を外れた位置ずれは、400ミクロン未満であり、
前記処理チャンバは、少なくとも、第1、第2、第3、および第4のステーションを備え、前記第1のステーションは、第1のチャックレス台座と、その外周に第1のウエハを支持する第1のキャリアリングとを有し、前記第2のステーションは、第2のチャックレス台座と、その外周に第2のウエハを支持する第2のキャリアリングとを有し、前記第3のステーションは、第3のチャックレス台座と、その外周に第3のキャリアリングとを有し、前記第4のステーションは、第4のチャックレス台座と、その外周に第4のキャリアリングとを有し、
前記方法は、さらに、
前記第1、前記第2、前記第3、および前記第4のステーションにおいて前記第1、前記第2、前記第3、および前記第4のキャリアリングを同時に持ち上げ、
前記第1および前記第2のキャリアリング上の前記第1および前記第2のウエハが前記第3および前記第4のステーションに移動されるように、前記第1、前記第2、前記第3、および前記第4のキャリアリングをインデックスし、
前記ウエハが前記第3および前記第4のチャックレス台座のウエハ対向面から延びるウエハ支持部上に支持されるときは、前記第1および前記第2のウエハの位置ずれを低減させるのに有効な圧力まで処理チャンバをポンプアウトし、
前記処理チャンバが前記減圧状態にある間に、前記第1および前記第2のウエハを前記第3および前記第4のチャックレス台座のウエハ支持部上に降ろす、方法。
[適用例5]適用例4に記載の方法であって、さらに、
第3および第4のウエハを前記第1および前記第2のステーションで前記処理チャンバに搬入し、
前記第3および前記第4のウエハを前記第1および前記第2のステーションの上昇したリフトピン上に支持し、
前記ウエハが前記第1および前記第2のステーションの前記ウエハ支持部上に設置されたときに、前記処理チャンバを前記第3および前記第4のウエハの位置ずれを低減させるのに有効な圧力までポンプアウトし、
前記処理チャンバが前記減圧状態にある間に、前記第3および前記第4のウエハを前記第1および前記第2のチャックレス台座の前記ウエハ支持部上に支持するために、前記第1および前記第2のステーションの前記リフトピンを下降させる、方法。
[適用例6]適用例1に記載の方法であって、
前記ウエハ支持部は、少なくとも3つの最小接触面積(MCA)支持部材を備える、方法。
[適用例7]適用例1に記載の方法であって、
前記ウエハ支持部は、前記ウエハ対向面の上方に少なくとも2ミル延びる、方法。
[適用例8]適用例1に記載の方法であって、
前記ウエハ支持部は、前記ウエハ対向面の上方に少なくとも4ミル延びる、方法。
[適用例9]適用例1に記載の方法であって、
前記ウエハ支持部は、前記ウエハ対向面の上方に少なくとも6ミル延びる、方法。
[適用例10]適用例1に記載の方法であって、さらに、
前記処理チャンバ内の圧力が前記減圧状態まで低下している間に、前記ウエハの前側にガスを流す、方法。
[適用例11]適用例1に記載の方法であって、
前記ウエハを、前記処理チャンバ内の前記圧力が前記減圧状態まで低下している間は、リフトピン上に支持する、方法。
[適用例12]適用例11に記載の方法であって、
前記ウエハを、前記処理チャンバを前記減圧状態に維持しながら前記リフトピンを下降させることによって、前記ウエハ支持部上に降ろす、方法。
[適用例13]適用例1に記載の方法であって、
前記ウエハを、前記処理チャンバ内の前記圧力が前記減圧状態に低下している間は、キャリアリング上に支持する、方法。
[適用例14]適用例1に記載の方法であって、
前記減圧状態は、0.2Torr以下である、方法。
[適用例15]適用例1に記載の方法であって、
前記減圧状態は、0.05Torr以下である、方法。
[適用例16]適用例1に記載の方法であって、
前記成膜は、前記ウエハの前側への原子層堆積(ALD)を含む、方法。
[適用例17]適用例16に記載の方法であって、
前記ウエハの外縁部から1.5mmの距離における膜厚変動は、5オングストローム未満である、方法。
[適用例18]適用例16に記載の方法であって、
前記成膜は、前記処理チャンバの1つの処理ステーションで実行される、方法。
[適用例19]適用例16に記載の方法であって、
前記成膜は、前記処理チャンバの4つのステーションで連続的に実行される、方法。
Claims (19)
- ウエハ上への成膜時における前記ウエハの位置ずれを低減させる方法であって、
前記ウエハが、前記ウエハの外縁部とポケットの壁との間に隙間を伴って、処理チャンバ内でチャックレス台座のウエハ対向面上のウエハ支持部の上方にあるように、前記ウエハをリフトピン上またはキャリアリング上に支持し、
前記ウエハが前記ウエハ支持部の上方にある状態で前記ウエハを前記リフトピンまたはキャリアリング上に支持しながら、前記ウエハが前記台座の前記ウエハ対向面から延びるウエハ支持部上に設置されたときに、前記ウエハの位置ずれを低減させるのに有効な減圧状態まで前記処理チャンバをポンプアウトし、
前記処理チャンバが前記減圧状態にある間に前記ウエハが前記ウエハ支持部上に降ろされるように、前記リフトピンまたは前記キャリアリングを降ろし、前記ウエハ上への成膜時の前記ポケットにおける横ずれを低減させるために、前記ウエハを前記チャックレス台座の前記ウエハ対向面の上方の十分な距離に支持し、
前記ウエハが前記ウエハ支持部上に支持されている間に前記ウエハ上に成膜し、
前記成膜後の前記ウエハの初期位置から中心を外れた位置ずれは、400ミクロン未満である、方法。 - 請求項1に記載の方法であって、
前記成膜後の前記ウエハの初期位置から中心を外れた位置ずれは、200ミクロン未満である、方法。 - 請求項1に記載の方法であって、
前記減圧状態は、0.5Torr未満である、方法。 - ウエハ上への成膜時における前記ウエハの位置ずれを低減させる方法であって、
前記ウエハを処理チャンバ内でチャックレス台座のウエハ対向面の上方に支持し、
前記ウエハが前記台座の前記ウエハ対向面から延びるウエハ支持部上に設置されたときに、前記ウエハの位置ずれを低減させるのに有効な減圧状態まで前記処理チャンバをポンプアウトし、
前記処理チャンバが前記減圧状態にある間に前記ウエハを前記ウエハ支持部上に降ろし、前記ウエハ上への成膜時における位置ずれを低減させるために、前記ウエハを前記チャックレス台座の前記ウエハ対向面の上方の十分な距離に支持し、
前記ウエハが前記ウエハ支持部上に支持されている間に前記ウエハ上に成膜し、
前記成膜後の前記ウエハの初期位置から中心を外れた位置ずれは、400ミクロン未満であり、
前記処理チャンバは、少なくとも、第1、第2、第3、および第4のステーションを備え、前記第1のステーションは、第1のチャックレス台座と、その外周に第1のウエハを支持する第1のキャリアリングとを有し、前記第2のステーションは、第2のチャックレス台座と、その外周に第2のウエハを支持する第2のキャリアリングとを有し、前記第3のステーションは、第3のチャックレス台座と、その外周に第3のキャリアリングとを有し、前記第4のステーションは、第4のチャックレス台座と、その外周に第4のキャリアリングとを有し、
前記方法は、さらに、
前記第1、前記第2、前記第3、および前記第4のステーションにおいて前記第1、前記第2、前記第3、および前記第4のキャリアリングを同時に持ち上げ、
前記第1および前記第2のキャリアリング上の前記第1および前記第2のウエハが前記第3および前記第4のステーションに移動されるように、前記第1、前記第2、前記第3、および前記第4のキャリアリングをインデックスし、
前記ウエハが前記第3および前記第4のチャックレス台座のウエハ対向面から延びるウエハ支持部上に支持されるときは、前記第1および前記第2のウエハの位置ずれを低減させるのに有効な圧力まで処理チャンバをポンプアウトし、
前記処理チャンバが前記減圧状態にある間に、前記第1および前記第2のウエハを前記第3および前記第4のチャックレス台座のウエハ支持部上に降ろす、方法。 - 請求項4に記載の方法であって、さらに、
第3および第4のウエハを前記第1および前記第2のステーションで前記処理チャンバに搬入し、
前記第3および前記第4のウエハを前記第1および前記第2のステーションの上昇したリフトピン上に支持し、
前記ウエハが前記第1および前記第2のステーションの前記ウエハ支持部上に設置されたときに、前記処理チャンバを前記第3および前記第4のウエハの位置ずれを低減させるのに有効な圧力までポンプアウトし、
前記処理チャンバが前記減圧状態にある間に、前記第3および前記第4のウエハを前記第1および前記第2のチャックレス台座の前記ウエハ支持部上に支持するために、前記第1および前記第2のステーションの前記リフトピンを下降させる、方法。 - 請求項1に記載の方法であって、
前記ウエハ支持部は、少なくとも3つの最小接触面積(MCA)支持部材を備える、方法。 - 請求項1に記載の方法であって、
前記ウエハ支持部は、前記ウエハ対向面の上方に少なくとも2ミル延びる、方法。 - 請求項1に記載の方法であって、
前記ウエハ支持部は、前記ウエハ対向面の上方に少なくとも4ミル延びる、方法。 - 請求項1に記載の方法であって、
前記ウエハ支持部は、前記ウエハ対向面の上方に少なくとも6ミル延びる、方法。 - 請求項1に記載の方法であって、さらに、
前記処理チャンバ内の圧力が前記減圧状態まで低下している間に、前記ウエハの前側にガスを流す、方法。 - 請求項1に記載の方法であって、
前記ウエハを、前記処理チャンバ内の前記圧力が前記減圧状態まで低下している間は、リフトピン上に支持する、方法。 - 請求項11に記載の方法であって、
前記ウエハを、前記処理チャンバを前記減圧状態に維持しながら前記リフトピンを下降させることによって、前記ウエハ支持部上に降ろす、方法。 - 請求項1に記載の方法であって、
前記ウエハを、前記処理チャンバ内の前記圧力が前記減圧状態に低下している間は、キャリアリング上に支持する、方法。 - 請求項1に記載の方法であって、
前記減圧状態は、0.2Torr以下である、方法。 - 請求項1に記載の方法であって、
前記減圧状態は、0.05Torr以下である、方法。 - 請求項1に記載の方法であって、
前記成膜は、前記ウエハの前側への原子層堆積(ALD)を含む、方法。 - 請求項16に記載の方法であって、
前記ウエハの外縁部から1.5mmの距離における膜厚変動は、5オングストローム未満である、方法。 - 請求項16に記載の方法であって、
前記成膜は、前記処理チャンバの1つの処理ステーションで実行される、方法。 - 請求項16に記載の方法であって、
前記成膜は、前記処理チャンバの4つのステーションで連続的に実行される、方法。
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