JP2022084838A - ケイ素ベースのハードマスク - Google Patents
ケイ素ベースのハードマスク Download PDFInfo
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- JP2022084838A JP2022084838A JP2022048028A JP2022048028A JP2022084838A JP 2022084838 A JP2022084838 A JP 2022084838A JP 2022048028 A JP2022048028 A JP 2022048028A JP 2022048028 A JP2022048028 A JP 2022048028A JP 2022084838 A JP2022084838 A JP 2022084838A
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- Prior art keywords
- moiety
- unsaturated
- silicon
- layer
- siloxane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 73
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 72
- 239000010703 silicon Substances 0.000 title claims abstract description 72
- 239000000178 monomer Substances 0.000 claims abstract description 60
- 229920000642 polymer Polymers 0.000 claims abstract description 57
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910000077 silane Inorganic materials 0.000 claims abstract description 50
- 239000000203 mixture Substances 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 35
- 125000005647 linker group Chemical group 0.000 claims abstract description 32
- 239000011248 coating agent Substances 0.000 claims abstract description 22
- 238000000576 coating method Methods 0.000 claims abstract description 22
- 125000001183 hydrocarbyl group Chemical group 0.000 claims abstract description 21
- 238000006116 polymerization reaction Methods 0.000 claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 98
- 239000000758 substrate Substances 0.000 claims description 45
- -1 trifluoromethylphenyl Chemical group 0.000 claims description 42
- 125000001931 aliphatic group Chemical group 0.000 claims description 41
- 125000003118 aryl group Chemical group 0.000 claims description 37
- 229910052799 carbon Inorganic materials 0.000 claims description 35
- 239000004065 semiconductor Substances 0.000 claims description 32
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 28
- 125000003545 alkoxy group Chemical group 0.000 claims description 28
- 125000000217 alkyl group Chemical group 0.000 claims description 28
- 229920002120 photoresistant polymer Polymers 0.000 claims description 26
- 125000004423 acyloxy group Chemical group 0.000 claims description 23
- 125000000304 alkynyl group Chemical group 0.000 claims description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical group N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- 125000002252 acyl group Chemical group 0.000 claims description 17
- 125000003342 alkenyl group Chemical group 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims description 14
- 239000003960 organic solvent Substances 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 125000005843 halogen group Chemical group 0.000 claims description 12
- 229910052757 nitrogen Chemical group 0.000 claims description 11
- 125000006374 C2-C10 alkenyl group Chemical group 0.000 claims description 9
- 125000004104 aryloxy group Chemical group 0.000 claims description 9
- 125000005842 heteroatom Chemical group 0.000 claims description 8
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 6
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 claims description 5
- 125000001624 naphthyl group Chemical group 0.000 claims description 5
- 125000005561 phenanthryl group Chemical group 0.000 claims description 5
- 125000001725 pyrenyl group Chemical group 0.000 claims description 5
- 125000004076 pyridyl group Chemical group 0.000 claims description 4
- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 claims description 3
- 125000000641 acridinyl group Chemical group C1(=CC=CC2=NC3=CC=CC=C3C=C12)* 0.000 claims description 3
- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 claims description 3
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 claims description 3
- 125000003336 coronenyl group Chemical group C1(=CC2=CC=C3C=CC4=CC=C5C=CC6=CC=C1C1=C6C5=C4C3=C21)* 0.000 claims description 3
- 125000005509 dibenzothiophenyl group Chemical group 0.000 claims description 3
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 claims description 3
- 125000001207 fluorophenyl group Chemical group 0.000 claims description 3
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 claims description 3
- 125000003011 styrenyl group Chemical group [H]\C(*)=C(/[H])C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 claims description 3
- 125000001544 thienyl group Chemical group 0.000 claims description 3
- 125000003944 tolyl group Chemical group 0.000 claims description 3
- 125000003960 triphenylenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C3=CC=CC=C3C12)* 0.000 claims description 3
- 125000005023 xylyl group Chemical group 0.000 claims description 3
- 125000001041 indolyl group Chemical group 0.000 claims description 2
- 230000031700 light absorption Effects 0.000 claims description 2
- 125000005375 organosiloxane group Chemical group 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 93
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 22
- 238000012546 transfer Methods 0.000 description 16
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 15
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 15
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 12
- 239000010408 film Substances 0.000 description 12
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 11
- 238000009472 formulation Methods 0.000 description 10
- 239000007787 solid Substances 0.000 description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- 125000003358 C2-C20 alkenyl group Chemical group 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 9
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 9
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 239000003381 stabilizer Substances 0.000 description 8
- 125000006649 (C2-C20) alkynyl group Chemical group 0.000 description 7
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 7
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 7
- 239000011247 coating layer Substances 0.000 description 7
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 239000004793 Polystyrene Substances 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 229940116333 ethyl lactate Drugs 0.000 description 6
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 6
- 229920002223 polystyrene Polymers 0.000 description 6
- LTPSRQRIPCVMKQ-UHFFFAOYSA-N 2-amino-5-methylbenzenesulfonic acid Chemical compound CC1=CC=C(N)C(S(O)(=O)=O)=C1 LTPSRQRIPCVMKQ-UHFFFAOYSA-N 0.000 description 5
- 102100027370 Parathymosin Human genes 0.000 description 5
- CPLASELWOOUNGW-UHFFFAOYSA-N benzyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)CC1=CC=CC=C1 CPLASELWOOUNGW-UHFFFAOYSA-N 0.000 description 5
- 229910052736 halogen Inorganic materials 0.000 description 5
- 150000002367 halogens Chemical class 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 5
- 239000011541 reaction mixture Substances 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 125000001424 substituent group Chemical group 0.000 description 5
- 239000003039 volatile agent Substances 0.000 description 5
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 235000019000 fluorine Nutrition 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 239000004615 ingredient Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229920005573 silicon-containing polymer Polymers 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- NHGXDBSUJJNIRV-UHFFFAOYSA-M tetrabutylammonium chloride Chemical compound [Cl-].CCCC[N+](CCCC)(CCCC)CCCC NHGXDBSUJJNIRV-UHFFFAOYSA-M 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- NOZAQBYNLKNDRT-UHFFFAOYSA-N [diacetyloxy(ethenyl)silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)=O)C=C NOZAQBYNLKNDRT-UHFFFAOYSA-N 0.000 description 3
- VLFKGWCMFMCFRM-UHFFFAOYSA-N [diacetyloxy(phenyl)silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)=O)C1=CC=CC=C1 VLFKGWCMFMCFRM-UHFFFAOYSA-N 0.000 description 3
- 239000003377 acid catalyst Substances 0.000 description 3
- 150000001298 alcohols Chemical class 0.000 description 3
- 125000002723 alicyclic group Chemical group 0.000 description 3
- 150000001335 aliphatic alkanes Chemical class 0.000 description 3
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 3
- NBHLGURMXJHIOD-UHFFFAOYSA-N dibenzyl(dimethoxy)silane Chemical compound C=1C=CC=CC=1C[Si](OC)(OC)CC1=CC=CC=C1 NBHLGURMXJHIOD-UHFFFAOYSA-N 0.000 description 3
- ZZNQQQWFKKTOSD-UHFFFAOYSA-N diethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OCC)(OCC)C1=CC=CC=C1 ZZNQQQWFKKTOSD-UHFFFAOYSA-N 0.000 description 3
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 description 3
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 150000003254 radicals Chemical class 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- YFNYCSJNUJQGNF-UHFFFAOYSA-N triethoxy(1-triethoxysilylethenyl)silane Chemical group CCO[Si](OCC)(OCC)C(=C)[Si](OCC)(OCC)OCC YFNYCSJNUJQGNF-UHFFFAOYSA-N 0.000 description 3
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 3
- UMFJXASDGBJDEB-UHFFFAOYSA-N triethoxy(prop-2-enyl)silane Chemical compound CCO[Si](CC=C)(OCC)OCC UMFJXASDGBJDEB-UHFFFAOYSA-N 0.000 description 3
- FCVNATXRSJMIDT-UHFFFAOYSA-N trihydroxy(phenyl)silane Chemical compound O[Si](O)(O)C1=CC=CC=C1 FCVNATXRSJMIDT-UHFFFAOYSA-N 0.000 description 3
- LEEANUDEDHYDTG-UHFFFAOYSA-N 1,2-dimethoxypropane Chemical compound COCC(C)OC LEEANUDEDHYDTG-UHFFFAOYSA-N 0.000 description 2
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- LIPRQQHINVWJCH-UHFFFAOYSA-N 1-ethoxypropan-2-yl acetate Chemical compound CCOCC(C)OC(C)=O LIPRQQHINVWJCH-UHFFFAOYSA-N 0.000 description 2
- FYXZIHJSCONGAU-UHFFFAOYSA-N 1-trimethoxysilylprop-2-en-1-one Chemical compound CO[Si](OC)(OC)C(=O)C=C FYXZIHJSCONGAU-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- LBLYYCQCTBFVLH-UHFFFAOYSA-N 2-Methylbenzenesulfonic acid Chemical compound CC1=CC=CC=C1S(O)(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-N 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 2
- BXTAWJKLIJBLGS-UHFFFAOYSA-N C(C)(=O)O[Si](C=CC1=CC=C(C=C1)C=C[Si](OC(C)=O)(OC(C)=O)OC(C)=O)(OC(C)=O)OC(C)=O Chemical compound C(C)(=O)O[Si](C=CC1=CC=C(C=C1)C=C[Si](OC(C)=O)(OC(C)=O)OC(C)=O)(OC(C)=O)OC(C)=O BXTAWJKLIJBLGS-UHFFFAOYSA-N 0.000 description 2
- BZLCESSQGAHAPK-UHFFFAOYSA-N C(C)O[Si](C=CC=C[Si](OCC)(OCC)OCC)(OCC)OCC Chemical compound C(C)O[Si](C=CC=C[Si](OCC)(OCC)OCC)(OCC)OCC BZLCESSQGAHAPK-UHFFFAOYSA-N 0.000 description 2
- GMYIBEFHCIBMEJ-UHFFFAOYSA-N C(C)[Si](C=CC(C=C[Si](CC)(CC)CC)C1=CC=CC=C1)(CC)CC Chemical compound C(C)[Si](C=CC(C=C[Si](CC)(CC)CC)C1=CC=CC=C1)(CC)CC GMYIBEFHCIBMEJ-UHFFFAOYSA-N 0.000 description 2
- NTGFYFVLIFKKSO-UHFFFAOYSA-N C(C)[Si](C=CCC=C[Si](CC)(CC)CC)(CC)CC Chemical compound C(C)[Si](C=CCC=C[Si](CC)(CC)CC)(CC)CC NTGFYFVLIFKKSO-UHFFFAOYSA-N 0.000 description 2
- XWMKRXZVTFDICN-UHFFFAOYSA-N CO[Si](C=CC=C[Si](OC)(OC)OC)(OC)OC Chemical compound CO[Si](C=CC=C[Si](OC)(OC)OC)(OC)OC XWMKRXZVTFDICN-UHFFFAOYSA-N 0.000 description 2
- QXECQSQPIRGSTE-UHFFFAOYSA-N CO[Si](OC)(OC)CCC[Si](C1=CC=CC=C1)(C)CCC[Si](OC)(OC)OC Chemical compound CO[Si](OC)(OC)CCC[Si](C1=CC=CC=C1)(C)CCC[Si](OC)(OC)OC QXECQSQPIRGSTE-UHFFFAOYSA-N 0.000 description 2
- FIASOGFMWMYKBB-UHFFFAOYSA-N CO[Si](OC)(OC)CCC[Si](C=C)(C)CCC[Si](OC)(OC)OC Chemical compound CO[Si](OC)(OC)CCC[Si](C=C)(C)CCC[Si](OC)(OC)OC FIASOGFMWMYKBB-UHFFFAOYSA-N 0.000 description 2
- UEJLVXXRHCNIBR-UHFFFAOYSA-N C[Si](C(C)C=CC(C)[Si](C)(C)C)(C)C Chemical compound C[Si](C(C)C=CC(C)[Si](C)(C)C)(C)C UEJLVXXRHCNIBR-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical group C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 125000002947 alkylene group Chemical group 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- CSXPRVTYIFRYPR-UHFFFAOYSA-N bis(ethenyl)-diethoxysilane Chemical compound CCO[Si](C=C)(C=C)OCC CSXPRVTYIFRYPR-UHFFFAOYSA-N 0.000 description 2
- ZPECUSGQPIKHLT-UHFFFAOYSA-N bis(ethenyl)-dimethoxysilane Chemical compound CO[Si](OC)(C=C)C=C ZPECUSGQPIKHLT-UHFFFAOYSA-N 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 2
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
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- FOQJQXVUMYLJSU-UHFFFAOYSA-N triethoxy(1-triethoxysilylethyl)silane Chemical compound CCO[Si](OCC)(OCC)C(C)[Si](OCC)(OCC)OCC FOQJQXVUMYLJSU-UHFFFAOYSA-N 0.000 description 1
- CDZULFMEYKOAEF-UHFFFAOYSA-N triethoxy(ethynyl)silane Chemical compound CCO[Si](OCC)(OCC)C#C CDZULFMEYKOAEF-UHFFFAOYSA-N 0.000 description 1
- WHIKJCKGKKIPDO-UHFFFAOYSA-N triethoxy(prop-2-ynyl)silane Chemical compound CCO[Si](CC#C)(OCC)OCC WHIKJCKGKKIPDO-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
- UBMUZYGBAGFCDF-UHFFFAOYSA-N trimethoxy(2-phenylethyl)silane Chemical compound CO[Si](OC)(OC)CCC1=CC=CC=C1 UBMUZYGBAGFCDF-UHFFFAOYSA-N 0.000 description 1
- HIFICCZJGOXSLW-UHFFFAOYSA-N trimethoxy(prop-2-ynyl)silane Chemical compound CO[Si](OC)(OC)CC#C HIFICCZJGOXSLW-UHFFFAOYSA-N 0.000 description 1
- GKMJIVDFRBQRTH-UHFFFAOYSA-N trimethoxy-[[4-(trimethoxysilylmethyl)phenyl]methyl]silane Chemical compound CO[Si](OC)(OC)CC1=CC=C(C[Si](OC)(OC)OC)C=C1 GKMJIVDFRBQRTH-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- MDHOSBTXSFZKBD-UHFFFAOYSA-N trimethyl(5-trimethylsilylpenta-1,4-dienyl)silane Chemical compound C[Si](C)(C)C=CCC=C[Si](C)(C)C MDHOSBTXSFZKBD-UHFFFAOYSA-N 0.000 description 1
- BOZCPJYCSHAPRN-UHFFFAOYSA-N trimethyl-(10-trimethylsilylanthracen-9-yl)silane Chemical compound C1=CC=C2C([Si](C)(C)C)=C(C=CC=C3)C3=C([Si](C)(C)C)C2=C1 BOZCPJYCSHAPRN-UHFFFAOYSA-N 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
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Abstract
Description
{(R10SiO1.5)m(SiO1.5-LG-SiO1.5)n(ChSiO1.5)o}(OR11)p (4)
式中、R10がC2-20不飽和ヒドロカルビル部分であり、各R11基は、独立して、H、C1-6アルキル、またはC1-6アシルであり、LGはC2-30不飽和連結基部分であり、Chは、1つ以上の芳香族環を有するC5-30発色団部分であり、0.01≦m≦0.75であり、0.2≦n≦0.95であり、0.01≦o≦0.75であり、0.01≦p≦0.99であり、m+n+o=1である、有機シロキサンポリマーが、本発明により提供される。
(R1)a(R2)bSi(R3)4-(a+b) (1)
式中、各R1は、独立してC2-20不飽和ヒドロカルビル部分であり、各R2は、独立して、C1-12アルキルであり、各R3は独立して、ハロゲン、ヒドロキシル、C1-6アルコキシ、及びC1-6アシルオキシから選択され、a=1~3及びb=0~2である。各R1が、非置換C2-20不飽和脂肪族部分と、ハロ、シアノ、C1-C10アルコキシ、C1-C10アシル、及びC1-10アシルオキシ、ならびに-L-C2-20非置換脂肪族(式中、Lが-C(=O)-、-C(=O)O-、及び-O-C(=O)-から選択される2価の連結基である)のうちの1つ以上で置換されたC2-20不飽和脂肪族部分と、から選択されることが好ましい。より好ましくは、各R1は、非置換C2-12不飽和脂肪族部分、置換C2-12不飽和脂肪族部分、ならびに-L-C2-12非置換脂肪族部分(式中、Lが-C(=O)-、-C(=O)O-、及び-O-C(=O)-から選択される2価の連結基である)から選択され、さらにより好ましくは、非置換C2-12不飽和脂肪族部分である。または、R1は、置換または非置換C2-12アルケニル、C2-12アルキニル、及び-L-C2-12非置換脂肪族(式中、Lが-C(=O)-、-C(=O)O-、及び-O-C(=O)-から選択される2価の連結基である)から選択され、さらに好ましくは、非置換C2-12アルケニル及びC2-12アルキニルである。各R2は好ましくはC1-10アルキルから選択され、より好ましくは、C1-8アルキルである。各R3は好ましくは、ヒドロキシル、C1-6アルコキシ及びC1-6アシルオキシ、より好ましくはヒドロキシル及びC1-6アルコキシ、及びさらに好ましくは、C1-4アルコキシから選択される。好ましくは、a=1である。b=0が好ましい。a=1及びb=0がさらに好ましい。R1のC2-12不飽和ヒドロカルビル部分は、縮合性ケイ素含有部分による置換がされていない。
(R4)d(R5)eSi-R6-Si(R4)d’(R5)e’ (2)
式中、各R4はC1-12アルキル、C2-12アルケニル、C2-12アルキニル、及びC5-30アリールから独立して選択され、各R5はハロゲン、ヒドロキシル、C1-6アルコキシ、及びC1-6アシルオキシから独立して選択され、R6はC2-30不飽和連結基部分であり、d=0~2であり、d’=0~3であり、e=1~3であり、e’=0~3であり、d+e=3であり、d’+e’=3である。各R4は好ましくは、C1-10アルキルまたはC6-20アリールから選択される。各R5は、好ましくはヒドロキシル、C1-6アルコキシ、及びC1-6アシルオキシから選択され、より好ましくはヒドロキシルとC1-6アルコキシから選択され、さらにより好ましくは、C1-6アルコシキから選択される。R6は、任意に、1つ以上の非縮合性ケイ素含有部分を含んでもよい非置換C2-30不飽和脂肪族部分、任意に1つ以上の非縮合性ケイ素含有部分を含み得、ハロ、シアノ、C1-10アルキル、C2-10アルケニル、C2-10アルキニル、C1-10アルコキシ、C1-10アシル、C1-10アシルオキシ、C5-20アリール、及びC5-20アリールオキシのうちの1つ以上で置換されたC2-30不飽和脂肪族部分、1つ以上のC5-30アリール部分、ならびにそれらの組み合わせから選択されることが好ましい。より好ましくは、R6は、非置換C2-20不飽和脂肪族部分、または、ハロ、シアノ、C1-10アルキル、C2-10アルケニル、C2-10アルキニル、C1-10アルコキシ、C1-10アシル、C1-10アシルオキシ、及びC5-20アリールのうちの1つ以上で置換されたC2-20不飽和脂肪族部分から選択され、さらにより好ましくは、非置換C2-20不飽和脂肪族部分である。あるいは、R6は、置換もしくは非置換C2-20アルケニルまたは、置換もしくは非置換C2-20アルキニルから選択されることが好ましく、より好ましくは、非置換C2-20アルケニルまたは非置換C2-20アルキニルから選択され、さらにより好ましくは、非置換C2-20アルケニルから選択される。R6を述べるため本明細書で使用される場合、「置換C2-20アルケニル」及び「置換C2-20アルキニル」は、いずれかのC2-20アルケニル及びC2-20アルキニルであって、それぞれ、その水素原子の1つ以上が、C1-10アルコキシ、C1-10アシル、C1-10アシルオキシ、C5-20アリール、及びC5-20アリールオキシから選択される1つ以上の置換基で置換されているものを指す。好ましくは、d=0または1であり、より好ましくはd=0である。d’=0~2が好ましく、より好ましくは、d’=0である。好ましくは、e=2~3であり、より好ましくは、e=3である。e’=1~3が好ましく、及びより好ましくはe’=2または3である。d=0及びd’=0が好ましい。e=3及びe’=3がさらに好ましい。
(Ch)f(R7)gSi(R8)4-(f+g) (3)
式中、各ChはC5-30発色団部分である。各R7は独立してH,C1-12アルキル、C1-12アルケニル、及びC2-12アルキニルから選択される。各R8はハロゲン、ヒドロキシル、C1-6アルコキシ、及びC1-6アシルオキシから独立して選択される。f=1~3であり、g=0~2である。f=1または2が好ましく、より好ましくは1である。g=0または1が好ましく、より好ましくは0である。各R7は独立してC1-12アルキル、C2-12アルケニル、及びC2-12アルキニルから選択されることが好ましい。そして、より好ましくは、C1-12アルキルから選択される。好ましくは、各R8はヒドロキシル、C1-6アルコキシ、及びC1-6アシルオキシから、及びより好ましくは、ヒドロキシル、及びC1-6アルコキシから、独立して選択される。
{(R10SiO1.5)m(SiO1.5-LG-SiO1.5)n(ChSiO1.5)o}(OR11)p (4)
式中、R10はC2-20不飽和ヒドロカルビル部分であり、各R11は独立してH,C1-6アルキル、またはC1-6アシルであり、LGはC2-30不飽和連結基部分であり、Chは、1つ以上の芳香族環を有するC5-30発色団部分であり、0.01≦m≦0.95であり、0.1≦n≦0.95であり、0.01≦0≦0.75であり、0.01≦p≦0.99であり、m+n+o=1である。好ましくは、0.1≦m≦0.75であり、より好ましくは0.1≦m≦0.5である。0.1≦o≦0.5が好ましく、より好ましくは、0.1≦o≦0.3である。好ましくは、0.2≦n≦0.9であり、より好ましくは、0.3≦n≦0.8である。各LGは独立して、任意に1つ以上の非縮合性ケイ素含有部分を含んでもよい非置換C2-30不飽和脂肪族部分、任意に1つ以上の非縮合性ケイ素含有部分を含んでもよく、ハロ、シアノ、C1-10アルキル、C2-10アルケニル、C2-10アルキニル、C1-10アルコキシ、C1-10アシル、C1-10アシルオキシ、C5-20アリール及びC5-20アリールオキシのうちの1つ以上で置換されたC2-30不飽和脂肪族部分、1つ以上のC5-30アリール部、ならびにそれらの組み合わせから独立して選択されることが好ましい。より好ましくは、各LGは独立して、非置換C2-12不飽和脂肪族部分、またはハロ、シアノ、C1-10アルキル、C2-10アルケニル、C2-10アルキニル、C1-10アルコキシ、C1-10アシル、C1-10アシルオキシ、C5-20アリール、及びC5-20アリールオキシのうちの1つ以上で置換されたC2-12不飽和脂肪族部分であり、及びより好ましくは非置換C2-12不飽和脂肪族部分である。さらにより好ましくは、各LGは独立して、置換もしくは非置換C2-12アルケニルまたはC2-12アルキニル、さらにより好ましくは、非置換C2-12アルケニルまたはC2-12アルキニル、及びなおより好ましくは、C2-12アルケニルである。好ましくは、各R10は独立して、非置換C2-12不飽和脂肪族部分、置換C2-12不飽和脂肪族部分、-L-C2-12非置換脂肪族部分(式中、Lは-C(=O)-、-C(=O)O-及び-O-C(=O)-から選択される2価の連結基であるもの)から選択され、及びさらにより好ましくは、非置換C2-12不飽和脂肪族部分である。適したCh基は第3のシランモノマーに関し先に述べたものである。好ましくは、各Chは、フリル、ピリル、チエニル、ピリジル、フェニル、フルオロフェニル、トリフルオロメチルフェニル、ナフチル、アセナフチル、フルオレニル、カルバゾリル、アントラセニル、フェナントリル、ピレニル、コロネニル、テトラセニル、ペンタセニル、テトラフェニル、ベンゾテトラセニル、トリフェニレニル、ペリレニル、ベンジル、フェネチル、トリル、キシリル、スチレニル、ビニルナフチル、ビニルアントラセニル、ジベンゾチオフェニル、チオキサントニル、インドリル、ベンゾフェノニル、及びアクリジニルから独立して選択され、より好ましくはフェニル、ナフチル、アントラセニル、フェナントリル、及びベンジルから選択される。各R11が独立してHまたはC1-6アルキルであることが好ましい。
Si(R12)w(R13)4-w (5)
式中、各R12は、H及びC1-12アルキルから独立して選択され、各R13はハロゲン、ヒドロキシ、C1-6アルコキシ、及びC1-6アシルオキシから独立して選択され、及びw=0~3である。好ましくは、各R12はHとC1-6アルキル、より好ましくはC1-6アルキルから、選択される。各R13は、ヒドロキシ、C1-6アルコキシ、及びC1-6アシルオキシ、より好ましくはヒドロキシ及びC1-6アルコキシ、さらにより好ましくはC1-6から選択される。好ましくはw=0~2であり、より好ましくは0または1である。本縮合性有機シロキサンポリマーは、重合単位として式(5)の追加の縮合性シランモノマーを含まないことが好ましく、そしてより好ましくは、重合単位として追加の縮合性シランモノマーを含まない。
フェニルトリメトキシシラン(PTMS,6.35g)、ビニルトリメトキシシラン(VTMS、9.50g)、ビス(トリエトキシシリル)エタン(BTESE、84.1g)及びイソプロパノール(160g)へ、水(29.5g)中のHCl 0.1N(0.265g)が10分かけて加えられ、さらに50分攪拌された。反応混合物は69℃で18時間加熱され、室温まで冷却され、PGEE(300g)で希釈され、揮発物が減圧下除去された。PGEEを加えることにより混合物の濃度が10重量%固体分まで調節され、ポリスチレン標準に対して800の分子量を有する透明な溶液を与えた。
フェニルトリメトキシシラン(PTMS,6.35g)、エチルトリメトキシシラン(ETMS、2.40g)、ビス(トリエトキシシリル)エチレン(BSE、41.8g)及びイソプロパノール(80g)へ、水(14.7g)中のHCl 0.1N(1.32g)が10分かけて加えられ、さらに50分攪拌された。反応混合物は69℃で18時間加熱され、室温まで冷却され、PGEE(150g)で希釈され、揮発物が減圧下除去された。PGEEを加えることにより混合物の濃度が10重量%固体分まで調節され、ポリスチレン標準に対して46,300の分子量を有する透明な溶液を与えた。
Claims (16)
- 重合単位としてC2-20不飽和ヒドロカルビル部分及び縮合性ケイ素含有部分を有する、1つ以上の第1のシランモノマーと、C2-30不飽和連結基部分により結合された2つ以上のケイ素含有部分を有する、1つ以上の第2のシランモノマーであって、前記C2-30不飽和連結基部分は、炭素-炭素不飽和を有し、当該炭素-炭素不飽和は、非芳香族性不飽和であるかまたは芳香族性不飽和及び非芳香族性不飽和の両方であり、前記ケイ素含有部分のうちの少なくとも1つが縮合性ケイ素含有部分である、第2のシランモノマーと、発色団部分及び縮合性ケイ素含有部分を有する、1つ以上の第3のシランモノマーと、を含む、有機シロキサンポリマー。
- 前記発色団部分が非置換または置換C5-30芳香族部分である、請求項1に記載の有機シロキサンポリマー。
- 前記発色団部分がフリル、ピリル、ピリジル、フェニル、フルオロフェニル、トリフルオロメチルフェニル、ナフチル、アセナフチル、フルオレニル、カルバゾリル、アントラセニル、フェナントリル、ピレニル、コロネニル、テトラセニル、ペンタセニル、テトラフェニル、ベンゾテトラセニル、トリフェニレニル、ペリレニル、ベンジル、フェネチル、トリル、キシリル、スチレニル、ビニルナフチル、ビニルアントラセニル、ジベンゾチオフェニル、チオキサントニル、インドリル、チエニル、ベンゾフェノニル、及びアクリジニルから選択される、請求項2に記載の有機シロキサンポリマー。
- 前記不飽和連結基部分が、非置換C2-12不飽和脂肪族部分、ならびにハロ、シアノ、C1-10アルキル、C2-10アルケニル、C2-10アルキニル、C1-10アルコキシ、C1-10アシル、C1-10アシルオキシ、C5-20アリール、及びC5-20アリールオキシのうちの1つ以上で置換されたC2-12不飽和脂肪族部分から選択される、請求項1に記載の有機シロキサンポリマー。
- 前記C2-20不飽和ヒドロカルビル部分が、酸素及び窒素から選択される0~3個のヘテロ原子を有する非置換C2-15不飽和脂肪族部分、または酸素及び窒素から選択される0~3個のヘテロ原子を有し、かつハロ、シアノ、C1-10アルコキシ、C1-10アシル、及びC1-10アリールオキシ、ならびに-L-C2-20非置換脂肪族(式中、Lが-C(=O)-、-C(=O)O-、及び-O-C(=O)-から選択される2価の連結基である)から選択される1つ以上の置換基で置換されたC2-15不飽和脂肪族部分から選択される、請求項1に記載の有機シロキサンポリマー。
- 請求項1~5のいずれか一項に記載の有機シロキサンポリマーと、1つ以上の有機溶媒とを含む、組成物。
- 式(5)の有機シロキサンポリマーであって、
{(R10SiO1.5)m(SiO1.5-LG-SiO1.5)n(ChSiO1.5)o}(OR11)p (5)
式中、R10がC2-20不飽和ヒドロカルビル部分であり、各R11基は独立して、H、C1-6アルキル、またはC1-6アシルであり、LGはC2-30不飽和連結基部分であり、Chは、1つ以上の芳香族環を有するC5-30発色団部分であり、0.01≦m≦0.75であり、0.2≦n≦0.95であり、0.01≦o≦0.75であり、0.01≦p≦0.99であり、m+n+o=1である、有機シロキサンポリマー。 - 各LGは独立して、任意に1つ以上の非縮合性ケイ素含有部分を含み得る非置換C2-30不飽和脂肪族部分、任意に1つ以上の非縮合性ケイ素含有部分を含み得、ハロ、シアノ、C1-10アルキル、C2-10アルケニル、C2-10アルキニル、C1-10アルコキシ、C1-10アシル、C1-10アシルオキシ、C5-20アリール、及びC5-20アリールオキシのうちの1つ以上で置換されたC2-30不飽和脂肪族部分、1つ以上のC5-30アリール部分、ならびにそれらの組み合わせから選択される、請求項7に記載の有機シロキサンポリマー。
- Chが非置換または置換C5-30芳香族部分である、請求項7に記載の有機シロキサンポリマー。
- 各R10が独立して、置換または非置換のC2-12アルケニルまたはC2-12アルキニルである、請求項7に記載の有機シロキサンポリマー。
- 請求項8~10のいずれか一項に記載の有機シロキサンポリマー及び1つ以上の有機溶媒を含む、組成物。
- 半導体デバイスを製造する方法であって、
カーボンベースのハードマスク層を有する半導体デバイス基板を提供することと、
前記カーボンベースのハードマスク層の上に請求項6または11に記載の組成物の層を被覆し、シロキサン反射防止層を形成することと、
前記シロキサン反射防止層の上にフォトレジストの層を被覆することと、
前記フォトレジスト層にパターン形成し、パターンを形成することと、
前記パターンを前記シロキサン反射防止層に転写し、パターン形成されたシロキサン反射防止層を形成することと、
前記パターンを、前記パターン形成されたシロキサン反射防止層から前記カーボンベースのハードマスク層へ転写し、パターン形成されたカーボンベースのハードマスク層を形成することと、
前記パターンを、前記パターン形成されたカーボンベースのハードマスク層から前記半導体デバイス基板へ転写することと、を含み、
前記パターン形成されたシロキサン反射防止層が、前記パターンを前記半導体デバイス基板へ転写する工程の間に、実質的に取り除かれる、方法。 - 前記シロキサン反射防止層が、193nmの波長で1.7~2の範囲の屈折率(n値)及び0.2~0.5の光吸収(k値)を有する、請求項12に記載の方法。
- 前記シロキサン反射防止層が5~25nmの範囲の厚さを有する、請求項12に記載の方法。
- 前記シロキサン反射防止層が<75°の水の接触角を有する、請求項12に記載の方法。
- 半導体デバイスを製造する方法であって、
カーボンベースのハードマスク層を有する半導体デバイス基板を提供することと、
有機シロキサンポリマーと1つ以上の有機溶媒とを含む組成物であって、前記有機シロキサンポリマーが、重合単位としてC2-20不飽和ヒドロカルビル部分及び縮合性ケイ素含有部分を有する、1つ以上の第1のシランモノマーと、C2-30不飽和連結基部分により結合された2つ以上のケイ素含有部分を有する、1つ以上の第2のシランモノマーであって、前記ケイ素含有部分のうちの少なくとも1つが縮合性ケイ素含有部分である、第2のシランモノマーと、発色団部分及び縮合性ケイ素含有部分を有する、1つ以上の第3のシランモノマーと、を含む前記組成物の層を前記カーボンベースのハードマスク層の上に被覆し、シロキサン反射防止層を形成することと、
前記シロキサン反射防止層の上にフォトレジストの層を被覆することと、
前記フォトレジスト層にパターン形成し、パターンを形成することと、
前記パターンを前記シロキサン反射防止層に転写し、パターン形成されたシロキサン反射防止層を形成することと、
前記パターンを、前記パターン形成されたシロキサン反射防止層から前記カーボンベースのハードマスク層へ転写し、パターン形成されたカーボンベースのハードマスク層を形成することと、
前記パターンを、前記パターン形成されたカーボンベースのハードマスク層から前記半導体デバイス基板へ転写することと、を含み、
前記パターン形成されたシロキサン反射防止層が、前記パターンを前記半導体デバイス基板へ転写する工程の間に、実質的に取り除かれる、方法。
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