JP2022054302A5 - - Google Patents

Download PDF

Info

Publication number
JP2022054302A5
JP2022054302A5 JP2020161416A JP2020161416A JP2022054302A5 JP 2022054302 A5 JP2022054302 A5 JP 2022054302A5 JP 2020161416 A JP2020161416 A JP 2020161416A JP 2020161416 A JP2020161416 A JP 2020161416A JP 2022054302 A5 JP2022054302 A5 JP 2022054302A5
Authority
JP
Japan
Prior art keywords
base material
withstand
ppm
preferable
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2020161416A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022054302A (ja
JP7261777B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2020161416A priority Critical patent/JP7261777B2/ja
Priority claimed from JP2020161416A external-priority patent/JP7261777B2/ja
Priority to US17/480,158 priority patent/US12027564B2/en
Priority to TW110135307A priority patent/TWI899334B/zh
Publication of JP2022054302A publication Critical patent/JP2022054302A/ja
Publication of JP2022054302A5 publication Critical patent/JP2022054302A5/ja
Application granted granted Critical
Publication of JP7261777B2 publication Critical patent/JP7261777B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2020161416A 2020-09-25 2020-09-25 放射線画像撮影装置の製造方法及び搬送治具 Active JP7261777B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2020161416A JP7261777B2 (ja) 2020-09-25 2020-09-25 放射線画像撮影装置の製造方法及び搬送治具
US17/480,158 US12027564B2 (en) 2020-09-25 2021-09-21 Method of manufacturing radiographic imaging apparatus, and transport jig
TW110135307A TWI899334B (zh) 2020-09-25 2021-09-23 放射線圖像攝影裝置的製造方法及搬運治具

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020161416A JP7261777B2 (ja) 2020-09-25 2020-09-25 放射線画像撮影装置の製造方法及び搬送治具

Publications (3)

Publication Number Publication Date
JP2022054302A JP2022054302A (ja) 2022-04-06
JP2022054302A5 true JP2022054302A5 (https=) 2022-08-30
JP7261777B2 JP7261777B2 (ja) 2023-04-20

Family

ID=80821480

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020161416A Active JP7261777B2 (ja) 2020-09-25 2020-09-25 放射線画像撮影装置の製造方法及び搬送治具

Country Status (3)

Country Link
US (1) US12027564B2 (https=)
JP (1) JP7261777B2 (https=)
TW (1) TWI899334B (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4295713B2 (ja) 2004-11-30 2009-07-15 芝浦メカトロニクス株式会社 表示装置の組み立て装置及び表示装置の組み立て方法
JP2015068653A (ja) * 2013-09-26 2015-04-13 キヤノン株式会社 放射線撮像装置、その製造方法及び放射線検査装置
JP6534497B2 (ja) * 2017-03-22 2019-06-26 富士フイルム株式会社 放射線検出器及び放射線画像撮影装置
WO2020105706A1 (ja) * 2018-11-22 2020-05-28 富士フイルム株式会社 放射線検出器、放射線画像撮影装置、及び製造方法
TWI833894B (zh) 2019-02-08 2024-03-01 日商富士軟片股份有限公司 放射線檢測器的製造方法及放射線圖像攝影裝置

Similar Documents

Publication Publication Date Title
DE60139463D1 (de) Prozess zur herstellung von dünnfilmtransistoren
RU2010122313A (ru) Изготовление самостоятельных твердотельных слоев термической обработкой подложек с полимером
TWI559374B (zh) 通道材料的製造方法及半導體裝置的製造方法
TWI474397B (zh) Method for forming silicon oxide film of SOI wafer
US10529820B2 (en) Method for gallium nitride on diamond semiconductor wafer production
JPWO2020203200A5 (https=)
TW200635014A (en) Composite structure with high heat dissipation
TW200707637A (en) Method of manufacturing a semiconductor device and semiconductor device obtained by means of said method
CN105981132A (zh) 半导体用复合基板的操作基板及半导体用复合基板
JP2022054302A5 (https=)
JP2013105966A5 (https=)
JPWO2021065738A5 (https=)
WO2015100827A1 (zh) 定义多晶硅生长方向的方法
CN103824880B (zh) 双轴张应变GeSn n沟道隧穿场效应晶体管
CN102290333A (zh) 一种适用于石墨烯基器件的栅氧介质的形成方法
GB737950A (en) Improvements in and relating to plastic working of semiconductors
MY209983A (en) Thermally conductive composition and semiconductor device
TW200503056A (en) Silicon on insulator (SOI) wafer and its manufacturing method
CN104882433A (zh) 半导体装置及其制造方法
CN106910672A (zh) 一种半导体生长工艺
JP2005001961A (ja) Iii族窒化物系化合物半導体基板
Kino et al. Negative-Thermal-Expansion Gate Electrode to Introduce Tensile Strain into the Channel of MOSFETs for Mobility Enhancement
JPH01138174A (ja) 窒化アルミニウム焼結体の製造方法
TWI242816B (en) Method for monitoring low-temperature rapid thermal annealing process
JPH0353514A (ja) 半導体装置の製造方法