JP7261777B2 - 放射線画像撮影装置の製造方法及び搬送治具 - Google Patents

放射線画像撮影装置の製造方法及び搬送治具 Download PDF

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Publication number
JP7261777B2
JP7261777B2 JP2020161416A JP2020161416A JP7261777B2 JP 7261777 B2 JP7261777 B2 JP 7261777B2 JP 2020161416 A JP2020161416 A JP 2020161416A JP 2020161416 A JP2020161416 A JP 2020161416A JP 7261777 B2 JP7261777 B2 JP 7261777B2
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substrate
circuit board
base material
radiographic imaging
manufacturing
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JP2020161416A
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Japanese (ja)
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JP2022054302A5 (https=
JP2022054302A (ja
Inventor
信一 牛倉
久男 藤原
達教 谷本
圭一 赤松
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP2020161416A priority Critical patent/JP7261777B2/ja
Priority to US17/480,158 priority patent/US12027564B2/en
Priority to TW110135307A priority patent/TWI899334B/zh
Publication of JP2022054302A publication Critical patent/JP2022054302A/ja
Publication of JP2022054302A5 publication Critical patent/JP2022054302A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H10F71/1395—Manufacture or treatment of devices covered by this subclass using temporary substrates for thin-film devices

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  • Measurement Of Radiation (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
JP2020161416A 2020-09-25 2020-09-25 放射線画像撮影装置の製造方法及び搬送治具 Active JP7261777B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2020161416A JP7261777B2 (ja) 2020-09-25 2020-09-25 放射線画像撮影装置の製造方法及び搬送治具
US17/480,158 US12027564B2 (en) 2020-09-25 2021-09-21 Method of manufacturing radiographic imaging apparatus, and transport jig
TW110135307A TWI899334B (zh) 2020-09-25 2021-09-23 放射線圖像攝影裝置的製造方法及搬運治具

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020161416A JP7261777B2 (ja) 2020-09-25 2020-09-25 放射線画像撮影装置の製造方法及び搬送治具

Publications (3)

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JP2022054302A JP2022054302A (ja) 2022-04-06
JP2022054302A5 JP2022054302A5 (https=) 2022-08-30
JP7261777B2 true JP7261777B2 (ja) 2023-04-20

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JP2020161416A Active JP7261777B2 (ja) 2020-09-25 2020-09-25 放射線画像撮影装置の製造方法及び搬送治具

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US (1) US12027564B2 (https=)
JP (1) JP7261777B2 (https=)
TW (1) TWI899334B (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006156849A (ja) 2004-11-30 2006-06-15 Shibaura Mechatronics Corp 表示装置の組み立て装置及び表示装置の組み立て方法
WO2020162637A1 (ja) 2019-02-08 2020-08-13 富士フイルム株式会社 放射線検出器の製造方法及び放射線画像撮影装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015068653A (ja) * 2013-09-26 2015-04-13 キヤノン株式会社 放射線撮像装置、その製造方法及び放射線検査装置
JP6534497B2 (ja) 2017-03-22 2019-06-26 富士フイルム株式会社 放射線検出器及び放射線画像撮影装置
JP7031014B2 (ja) * 2018-11-22 2022-03-07 富士フイルム株式会社 放射線検出器、放射線画像撮影装置、及び製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006156849A (ja) 2004-11-30 2006-06-15 Shibaura Mechatronics Corp 表示装置の組み立て装置及び表示装置の組み立て方法
WO2020162637A1 (ja) 2019-02-08 2020-08-13 富士フイルム株式会社 放射線検出器の製造方法及び放射線画像撮影装置

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Publication number Publication date
TW202212863A (zh) 2022-04-01
TWI899334B (zh) 2025-10-01
US12027564B2 (en) 2024-07-02
US20220102399A1 (en) 2022-03-31
JP2022054302A (ja) 2022-04-06

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