JP2022053224A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2022053224A JP2022053224A JP2020159922A JP2020159922A JP2022053224A JP 2022053224 A JP2022053224 A JP 2022053224A JP 2020159922 A JP2020159922 A JP 2020159922A JP 2020159922 A JP2020159922 A JP 2020159922A JP 2022053224 A JP2022053224 A JP 2022053224A
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- electrode
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- semiconductor chip
- semiconductor device
- metal plate
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 143
- 229910052751 metal Inorganic materials 0.000 claims abstract description 109
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- 238000005304 joining Methods 0.000 claims description 10
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- 239000002923 metal particle Substances 0.000 claims description 7
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- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
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- 230000009193 crawling Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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- 230000000694 effects Effects 0.000 description 1
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- 230000005484 gravity Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
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Abstract
Description
第1実施形態は、半導体装置に関する。第1実施形態は、より具体的には、パワー半導体モジュールに関する。図1に実施形態の半導体装置100の断面図を示す。図1の半導体装置100の断面図は、半導体装置100の要部を表している。
第2実施形態は半導体装置に関する。図11に第2実施形態の半導体装置101の断面図を示す。図11に示す半導体装置101は、第1金属板41に替わり、第2金属板42を用いていることが第1実施形態の半導体装置100と異なる。第1実施形態と第2実施形態において、共通する内容についてはその説明を省略する。
第3実施形態は半導体装置に関する。図12に第3実施形態の半導体装置102の断面図を示す。図12に示す半導体装置102は、配線として、金属柱53を用いて、基板10の金属面12と第2金属板42を接続していることと、第2金属板42に凸部を設け凸部が第1導電性シート31を介して半導体チップ20と接続していることが第2実施形態の半導体装置101と異なる。第1実施形態から第2実施形態と第3実施形態において、共通する内容についてはその説明を省略する。
第4実施形態は半導体装置に関する。図13に第4実施形態の半導体装置103の断面図を示す。図13に示す半導体装置102は、配線を用いずに第2金属板42を曲げて、基板10の金属面12と第2金属板42を接続していることと、第2金属板42に凹部を設け、凹部において第1導電性シート31を介して半導体チップ20と接続していることが第2実施形態の半導体装置101と異なる。第1実施形態から第3実施形態と第4実施形態において、共通する内容についてはその説明を省略する。
Claims (7)
- 第1面に第1電極を有する半導体チップと、
金属板と、
前記半導体チップの第1面と前記金属板の間に位置し、前記第1電極と前記金属板を接合する第1導電性接合シートと、
を有する半導体装置。 - 前記第1導電性接合シートは、一次粒子径が10nm以上5μm以下のAg粒子、一次粒子径が10nm以上5μm以下のCu粒子及び一次粒子径が10nm以上5μm以下のNi粒子からなる群から選ばれる1種以上の金属粒子を含む請求項1に記載の半導体装置。
- 前記半導体チップから前記金属板方向に前記第1電極の外周辺と前記第1導電性接合シートの外周辺を重ねた際の距離の最大値は0.1mm以下である請求項1又は2に記載の半導体装置。
- 前記半導体チップから前記金属板方向に前記第1電極の外周辺と前記第1導電性接合シートの外周辺を重ねた際の距離の平均値は0.1mm以下である請求項1ないし3のいずれか1項に記載の半導体装置。
- 前記半導体チップから前記金属板方向に前記の第1電極の外周辺と前記第1導電性接合シートの外周辺を重ねた場合において、前記第1電極の外周辺に対して、前記第1導電性接合シートの外周辺が外側に出ている部分の面積と、前記第1電極の外周辺に対して、前記第1導電性接合シートの外周辺が内側に入り込んでいる部分の面積の和は、前記第1電極の面積の5%以下である請求項1ないし4のいずれか1項に記載の半導体装置。
- 金属膜を有する基板と、
第2導電性接合シートをさらに有し、
前記半導体チップの第1面とは反対側の第2面に第2電極を有し、
前記第2電極と前記金属膜は第2導電性接合シートで接合されている請求項1ないし5のいずれか1項に記載の半導体装置。 - 前記半導体装置には前記半導体チップが複数含まれ、
前記複数の半導体チップが前記金属板と前記第1導電性接合シートを介して接合している請求項1ないし6のいずれか1項に記載の半導体装置。
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JP2020159922A JP7404208B2 (ja) | 2020-09-24 | 2020-09-24 | 半導体装置 |
CN202110835836.3A CN114256168A (zh) | 2020-09-24 | 2021-07-23 | 半导体装置 |
US17/465,703 US11923270B2 (en) | 2020-09-24 | 2021-09-02 | Semiconductor device |
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Citations (5)
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