JP2022025048A - パッケージ構造及びその形成方法 - Google Patents
パッケージ構造及びその形成方法 Download PDFInfo
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- JP2022025048A JP2022025048A JP2021122516A JP2021122516A JP2022025048A JP 2022025048 A JP2022025048 A JP 2022025048A JP 2021122516 A JP2021122516 A JP 2021122516A JP 2021122516 A JP2021122516 A JP 2021122516A JP 2022025048 A JP2022025048 A JP 2022025048A
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Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Geometry (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Die Bonding (AREA)
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US16/941,509 US11239136B1 (en) | 2020-07-28 | 2020-07-28 | Adhesive and thermal interface material on a plurality of dies covered by a lid |
US16/941,509 | 2020-07-28 |
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US11682602B2 (en) * | 2021-02-04 | 2023-06-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method of manufacture |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7168484B2 (en) * | 2003-06-30 | 2007-01-30 | Intel Corporation | Thermal interface apparatus, systems, and methods |
US7183641B2 (en) * | 2005-03-30 | 2007-02-27 | Intel Corporation | Integrated heat spreader with intermetallic layer and method for making |
US7651938B2 (en) * | 2006-06-07 | 2010-01-26 | Advanced Micro Devices, Inc. | Void reduction in indium thermal interface material |
US7678615B2 (en) * | 2007-08-29 | 2010-03-16 | Advanced Micro Devices, Inc. | Semiconductor device with gel-type thermal interface material |
US20090057884A1 (en) * | 2007-08-29 | 2009-03-05 | Seah Sun Too | Multi-Chip Package |
US8304291B2 (en) * | 2009-06-29 | 2012-11-06 | Advanced Micro Devices, Inc. | Semiconductor chip thermal interface structures |
US8039304B2 (en) * | 2009-08-12 | 2011-10-18 | Stats Chippac, Ltd. | Semiconductor device and method of dual-molding die formed on opposite sides of build-up interconnect structures |
US8797057B2 (en) | 2011-02-11 | 2014-08-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Testing of semiconductor chips with microbumps |
US9443783B2 (en) | 2012-06-27 | 2016-09-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3DIC stacking device and method of manufacture |
US9299649B2 (en) | 2013-02-08 | 2016-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3D packages and methods for forming the same |
US8993380B2 (en) | 2013-03-08 | 2015-03-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for 3D IC package |
US9281254B2 (en) | 2014-02-13 | 2016-03-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming integrated circuit package |
US9425126B2 (en) | 2014-05-29 | 2016-08-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dummy structure for chip-on-wafer-on-substrate |
US9496189B2 (en) | 2014-06-13 | 2016-11-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stacked semiconductor devices and methods of forming same |
US9461018B1 (en) | 2015-04-17 | 2016-10-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fan-out PoP structure with inconsecutive polymer layer |
US9666502B2 (en) | 2015-04-17 | 2017-05-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Discrete polymer in fan-out packages |
US9735131B2 (en) | 2015-11-10 | 2017-08-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-stack package-on-package structures |
US9831148B2 (en) | 2016-03-11 | 2017-11-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated fan-out package including voltage regulators and methods forming same |
US10770405B2 (en) * | 2017-05-31 | 2020-09-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thermal interface material having different thicknesses in packages |
US10461014B2 (en) | 2017-08-31 | 2019-10-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Heat spreading device and method |
CN108717939B (zh) * | 2018-06-01 | 2020-06-12 | 京东方科技集团股份有限公司 | 静电释放保护电路、阵列基板和显示装置 |
US10756058B2 (en) * | 2018-08-29 | 2020-08-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor package and manufacturing method thereof |
US11062971B2 (en) | 2019-01-08 | 2021-07-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package structure and method and equipment for forming the same |
US11935799B2 (en) * | 2019-06-25 | 2024-03-19 | Intel Corporation | Integrated circuit package lids with polymer features |
US11705417B2 (en) * | 2019-10-08 | 2023-07-18 | Intel Corporation | Backside metallization (BSM) on stacked die packages and external silicon at wafer level, singulated die level, or stacked dies level |
CN113035788A (zh) * | 2019-12-25 | 2021-06-25 | 台湾积体电路制造股份有限公司 | 封装结构及其制作方法 |
US11239134B2 (en) * | 2020-01-17 | 2022-02-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package structure and method of fabricating the same |
US11239136B1 (en) * | 2020-07-28 | 2022-02-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Adhesive and thermal interface material on a plurality of dies covered by a lid |
US11469197B2 (en) * | 2020-08-26 | 2022-10-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuit package and method |
-
2020
- 2020-07-28 US US16/941,509 patent/US11239136B1/en active Active
- 2020-09-25 TW TW109133245A patent/TWI753587B/zh active
- 2020-09-29 CN CN202011048755.0A patent/CN113451285A/zh active Pending
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2021
- 2021-07-27 JP JP2021122516A patent/JP2022025048A/ja active Pending
- 2021-07-27 EP EP21188007.5A patent/EP3958304A3/en not_active Withdrawn
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2022
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2023
- 2023-03-10 US US18/181,552 patent/US11894287B2/en active Active
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US20220139802A1 (en) | 2022-05-05 |
EP3958304A3 (en) | 2022-09-14 |
US11894287B2 (en) | 2024-02-06 |
CN113451285A (zh) | 2021-09-28 |
TW202205571A (zh) | 2022-02-01 |
US20230230898A1 (en) | 2023-07-20 |
US11239136B1 (en) | 2022-02-01 |
EP3958304A2 (en) | 2022-02-23 |
TWI753587B (zh) | 2022-01-21 |
US20220037229A1 (en) | 2022-02-03 |
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