JP2022019032A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2022019032A JP2022019032A JP2020122569A JP2020122569A JP2022019032A JP 2022019032 A JP2022019032 A JP 2022019032A JP 2020122569 A JP2020122569 A JP 2020122569A JP 2020122569 A JP2020122569 A JP 2020122569A JP 2022019032 A JP2022019032 A JP 2022019032A
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- Prior art keywords
- electrode
- main
- common
- semiconductor device
- main electrode
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 266
- 238000007789 sealing Methods 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 238000005728 strengthening Methods 0.000 claims description 12
- 238000005304 joining Methods 0.000 claims description 11
- 230000000149 penetrating effect Effects 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 230000010354 integration Effects 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 18
- 229920005989 resin Polymers 0.000 description 16
- 239000011347 resin Substances 0.000 description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 13
- 230000004048 modification Effects 0.000 description 12
- 238000012986 modification Methods 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
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- H—ELECTRICITY
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- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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Abstract
Description
本発明の実施形態に係る半導体装置(半導体モジュール)の外観は、図1及び図2に示すように略直方体形状を有する。本発明の実施形態に係る半導体装置の全体は封止部材10で覆われている。図2に示すように、本発明の実施形態に係る半導体装置の略直方体形状の一面において、封止部材10から第1共通主電極1が露出している。
次に、図5及び図6を参照して、本発明の実施形態に係る半導体装置の組立方法の一例を説明する。
次に、本発明の実施形態に係る半導体装置100の適用例を図12に示す。本発明の実施形態に係る半導体装置100の第1共通主電極1が、接合材24を介して絶縁回路基板20に接合されている。本発明の実施形態に係る半導体装置100の第2共通主電極52bは、接合材25を介してリードフレーム26に接続されている。絶縁回路基板20には、本発明の実施形態に係る半導体装置100と同様の構成の半導体装置を複数搭載してもよい。
次に、第1及び第2比較例に係る半導体装置を説明する。第1比較例に係る半導体装置では、図13に示すように、絶縁回路基板102の一方の主面に接合材108を介して1又は複数の半導体チップ103が搭載されている。絶縁回路基板102の他方の主面は、熱拡散機能を有する金属ベース101に搭載されている。絶縁回路基板102及び半導体チップ103の周囲は樹脂ケース104で覆われている。樹脂ケース104の内側にはシリコンゲル107が充填され、絶縁性を向上させている。半導体チップ103及び絶縁回路基板102は、ボンディングワイヤ110,111やボンディングリボンを介して、樹脂ケース104から突出する外部接続端子105,106に電気的に接続されている。
これに対して、本発明の実施形態に係る半導体装置によれば、複数の半導体チップ3a~3dと同等サイズのままで、複数の半導体チップ3a~3dを集積することが可能となる。このため、SiC、Gan、Ga2O3等のワイドバンドギャップ半導体を用いた半導体チップのような小型チップを複数並列に集積して定格を拡大できるため、同定格の大型チップを作る場合に比べ、歩留まりの面で圧倒的に低コストを実現することができる。
本発明の実施形態の第1変形例に係る半導体装置は、図15に示すように、第1共通主電極1が横方向(Y軸方向)に拡張され、第1共通主電極1の側面の一部が封止部材10から露出する点が、図7に示した本発明の実施形態に係る半導体装置の構成と異なる。
本発明の実施形態の第2変形例に係る半導体装置は、図16に示すように、第2貫通孔7b,7f内に導電部材8a,8bが設けられている点が、図11に示した本発明の実施形態に係る半導体装置の構成と異なる。
本発明の実施形態の第3変形例に係る半導体装置は、図17及び図18に示すように、プリント基板5に接合強化用貫通孔(ノンスルーホール)9a,9bが設けられている点が、図10に示した本発明の実施形態に係る半導体装置の構成と異なる。
上記のように、本発明は実施形態によって記載したが、この開示の一部をなす論述及び図面は本発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施の形態、実施例及び運用技術が明らかとなろう。
1a,1b…溝部
2a,2b,2c,2d…接合材
3a,3b,3c,3d…半導体チップ
5…プリント基板
6a,6b…第1貫通孔
7a,7b,7c,7d,7e,7f,7g,7h…第2貫通孔
8a,8b…導電部材
9a,9b…接合強化用貫通孔
10…封止部材
10a,10b,10c,10d…面取り部
11a…第1金属層
11b…第2金属層
20…絶縁回路基板
21…絶縁基板
22,23…配線層
24…接合材
26…リードフレーム
31a,31b,31c,31d…制御電極(ゲート電極)
32a,32b,32c,32d…第2主電極(ソース電極)
33a,33b,33c,33d…第1主電極(ドレイン電極)
41a,41b,41c,41d,42a,42b,42c,42d,43a,43b,43c,43d…突起電極
51…絶縁層
52a…共通制御電極
52b…第2共通主電極
52x…切り欠き部(凹部)
53a…制御配線部
53b…主配線部
100…半導体装置
101…金属ベース
102…絶縁回路基板
103…半導体チップ
104…樹脂ケース
105,106…外部接続端子
107…シリコンゲル
108…接合材
110,111…ボンディングワイヤ
112…接合材
113…リードフレーム
Claims (11)
- 第1主電極を一方の主面にそれぞれ有し、且つ第2主電極及び制御電極を他方の主面にそれぞれ有する複数の半導体チップと、
前記複数の半導体チップのそれぞれの前記第1主電極を一方の主面に接合した第1共通主電極と、
前記複数の半導体チップのそれぞれの前記他方の主面に一方の主面が離間して対向する絶縁層と、前記絶縁層の前記一方の主面に設けられ、複数の前記制御電極に電気的に接続された制御配線部と、前記絶縁層の前記一方の主面に設けられ、前記制御配線部と近接して配置され、複数の前記第2主電極と電気的に接続された主配線部と、前記絶縁層の他方の主面に設けられ、少なくとも一部が平面視で前記絶縁層を介して前記制御配線部に重なる位置に配置された共通制御電極と、前記絶縁層の前記他方の主面に設けられ、少なくとも一部が平面視で前記絶縁層を介して前記制御配線部および前記主配線部に重なる位置に配置された第2共通主電極と、前記制御配線部、前記絶縁層および前記共通制御電極を貫通する第1貫通孔の内壁に設けられ、前記第1貫通孔を介して前記制御配線部と前記共通制御電極を電気的に接続する第1金属層と、前記主配線部、前記絶縁層および前記第2共通主電極を貫通する第2貫通孔の内壁に設けられ、前記第2貫通孔を介して前記主配線部と前記第2共通主電極を電気的に接続する第2金属層とを有するプリント基板と、
を備えることを特徴とする半導体装置。 - 前記複数の半導体チップのそれぞれの前記制御電極と前記制御配線部とをそれぞれ接合する複数の第1突起電極と、
前記複数の半導体チップのそれぞれの前記第2主電極と前記主配線部とをそれぞれ接合する複数の第2突起電極と、
前記複数の半導体チップを封止し、且つ前記第1共通主電極の他方の主面、前記共通制御電極及び前記第2共通主電極を露出する封止部材と、
を更に備えることを特徴とする請求項1に記載の半導体装置。 - 前記複数の第1突起電極及び前記複数の第2突起電極のそれぞれが、スタッドバンプであることを特徴とする請求項1又は2に記載の半導体装置。
- 前記第1貫通孔及び前記第2貫通孔内に前記封止部材が充填されていることを特徴とする請求項1~3のいずれか1項に記載の半導体装置。
- 前記第1貫通孔及び前記第2貫通孔内に設けられた導電部材を更に備えることを特徴とする請求項1~3のいずれか1項に記載の半導体装置。
- 前記複数の半導体チップのそれぞれの前記第1主電極と前記第1共通主電極の接合部の融点が300℃以上であることを特徴とする請求項1~5のいずれか1項に記載の半導体装置。
- 前記複数の半導体チップのそれぞれの前記制御電極同士が近接するように前記複数の半導体チップが配置されていることを特徴とする請求項1~6のいずれか1項に記載の半導体装置。
- 前記封止部材の硬化温度から常温までの平均線膨張係数が、前記複数の半導体チップの半導体材料の平均線膨張係数と、前記第1共通主電極の平均線膨張係数との間にあることを特徴とする請求項1~7のいずれか1項に記載の半導体装置。
- 前記プリント基板に、前記封止部材が充填された接合強化用貫通孔が設けられていることを特徴とする請求項1~8のいずれか1項に記載の半導体装置。
- 前記第2共通主電極が切り欠き部を有し、
前記共通制御電極が前記切り欠き部に設けられている
ことを特徴とする請求項1~9のいずれか1項に記載の半導体装置。 - 前記封止部材と、前記封止部材から露出する前記共通制御電極と、前記封止部材から露出する前記第2共通主電極が面一に配置されることを特徴とする請求項1~10のいずれか1項に記載の半導体装置。
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