JP2022002312A - 基板処理システム及び基板処理方法 - Google Patents
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Abstract
Description
これに対して、本実施形態では、被処理ウェハWの内部に改質層Mを形成することで、当該改質層MとクラックCを基点に周縁部Weを除去することができる。かかる場合、支持ウェハSの接合面Sjが研削等によるダメージを被ることがない。
これに対して、本実施形態では、被処理ウェハWの内部に形成した改質層MとクラックCを基点に周縁部Weを剥離させて除去するので、パーティクルが発生しない。
これに対して、本実施形態では、レーザを用いて被処理ウェハWの内部に改質層Mを形成するので、例えば1μm未満の高い精度を確保できる。このため、改質層Mを基点として除去される周縁部Weの幅(トリム幅)の精度も向上する。
これに対して、本実施形態では、高周波のレーザを用いて被処理ウェハWの内部に改質層Mを形成するので、チャック91の回転速度を速くすることができ、極めて短時間で処理を行うことができる。したがって、ウェハ処理のスループットを向上させることができる。
これに対して、本実施形態では、第1のレーザヘッド94自体が経時的に劣化することはなく、メンテナンス頻度を低減することができる。また、レーザを用いたドライプロセスであるため、研削水や廃水処理が不要となる。このため、ランニングコストを低廉化することができる。
これに対して、本実施形態では、例えば処理ユニット90において、被処理ウェハWとレーザ光を相対的に動作制御することにより、改質層Mをノッチの形状に合わせて形成することができ、ノッチの形状を残したまま、周縁部Weを容易に除去することもできる。
これに対して、本実施形態では、第2の被処理ウェハW2の内部に改質層Mを形成することで、当該改質層MとクラックCを基点に周縁部Weを容易に除去することができる。
これに対して、本実施形態では、レーザを用いて第2の被処理ウェハW2の内部に改質層Mを形成するので、高い精度を確保することができ、第2の被処理ウェハW2を適切に積層することができる。
50 加工装置
60 制御装置
90 処理ユニット
130 粗研削ユニット
S 支持ウェハ
T 重合ウェハ
W 被処理ウェハ
Claims (14)
- 基板を処理する基板処理システムであって、
第1の基板における除去対象の周縁部と前記第1の基板の中央部との境界に沿って当該第1の基板の内部に改質層を形成する改質層形成装置と、
前記周縁部において、前記第1の基板と第2の基板とが接合される界面に所定の処理を行う界面処理装置と、
前記改質層形成装置と前記界面処理装置を制御する制御装置と、を有し、
前記制御装置は、
前記改質層形成装置が前記界面処理装置で処理された前記界面の端部に対応する位置よりも径方向内側に前記改質層を形成する制御、を実行する、基板処理システム。 - 前記界面処理装置で処理が施させる前記界面は、前記第1の基板の内部である、請求項1に記載の基板処理システム。
- 前記第1の基板における前記第2の基板との接合面には複数のデバイスを含むデバイス層が形成され、
前記界面処理装置で処理が施させる前記界面は、前記デバイス層の内部である、請求項1に記載の基板処理システム。 - 前記界面処理装置は、前記界面を改質する、請求項1〜3のいずれか一項に記載の基板処理システム。
- 前記改質層を基点に前記第1の基板の周縁部を除去する周縁除去装置を備える、請求項1〜4のいずれか一項に記載の基板処理システム。
- 前記制御装置は、前記改質層の下端が研削後の前記第1の基板の目標表面より上方に位置するように前記改質層を形成する制御、を実行する、請求項1〜5のいずれか一項に記載の基板処理システム。
- 前記制御装置は、
前記改質層を前記第1の基板の厚み方向に複数段で形成する制御と、
前記複数段の改質層のうち最下段に形成される前記改質層の下端が、研削後の前記第1の基板の目標表面より上方に位置するように前記改質層を形成する制御と、を実行する、請求項1〜5のいずれか一項に記載の基板処理システム。 - 基板を処理する基板処理方法であって、
第1の基板における除去対象の周縁部と前記第1の基板の中央部との境界に沿って当該第1の基板の内部に改質層を形成することと、
前記周縁部において、前記第1の基板と第2の基板とが接合される界面に所定の処理を行うことと、を含み
前記改質層の形成に際しては、前記所定の処理が施された前記界面の端部に対応する位置よりも径方向内側に前記改質層を形成する、基板処理方法。 - 前記所定の処理が施される前記界面は前記第1の基板の内部である、請求項8に記載の基板処理方法。
- 前記第1の基板における前記第2の基板との接合面には複数のデバイスを含むデバイス層が形成され、
前記所定の処理が施される前記界面は前記デバイス層の内部である、請求項8に記載の基板処理方法。 - 前記所定の処理に際しては前記界面を改質する、請求項8〜10のいずれか一項に記載の基板処理方法。
- 前記改質層を基点に前記周縁部を除去することを含む、請求項8〜11のいずれか一項に記載の基板処理方法。
- 前記改質層の形成に際しては、当該改質層の下端が研削後の前記第1の基板の目標表面より上方に位置するように前記改質層を形成する、請求項8〜12のいずれか一項に記載の基板処理方法。
- 前記改質層の形成に際しては、
前記改質層を前記第1の基板の厚み方向に複数段で形成し、
前記複数段の改質層のうち最下段に形成される前記改質層の下端が、研削後の前記第1の基板の目標表面より上方に位置するように前記改質層を形成する、請求項8〜12のいずれか一項に記載の基板処理方法。
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