JP2021536702A5 - - Google Patents

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Publication number
JP2021536702A5
JP2021536702A5 JP2021512507A JP2021512507A JP2021536702A5 JP 2021536702 A5 JP2021536702 A5 JP 2021536702A5 JP 2021512507 A JP2021512507 A JP 2021512507A JP 2021512507 A JP2021512507 A JP 2021512507A JP 2021536702 A5 JP2021536702 A5 JP 2021536702A5
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JP
Japan
Prior art keywords
power transistor
driver circuit
storage capacitor
current
current driver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021512507A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021536702A (ja
JP7612567B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2019/049341 external-priority patent/WO2020051138A1/en
Publication of JP2021536702A publication Critical patent/JP2021536702A/ja
Publication of JP2021536702A5 publication Critical patent/JP2021536702A5/ja
Application granted granted Critical
Publication of JP7612567B2 publication Critical patent/JP7612567B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2021512507A 2018-09-05 2019-09-03 GaNを基にした調節可能な電流ドライバ回路 Active JP7612567B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862727115P 2018-09-05 2018-09-05
US62/727,115 2018-09-05
PCT/US2019/049341 WO2020051138A1 (en) 2018-09-05 2019-09-03 Gan based adjustable current driver circuit

Publications (3)

Publication Number Publication Date
JP2021536702A JP2021536702A (ja) 2021-12-27
JP2021536702A5 true JP2021536702A5 (enExample) 2022-09-12
JP7612567B2 JP7612567B2 (ja) 2025-01-14

Family

ID=69640256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021512507A Active JP7612567B2 (ja) 2018-09-05 2019-09-03 GaNを基にした調節可能な電流ドライバ回路

Country Status (7)

Country Link
US (1) US10749514B2 (enExample)
EP (1) EP3847739A4 (enExample)
JP (1) JP7612567B2 (enExample)
KR (1) KR102674752B1 (enExample)
CN (1) CN112956119B (enExample)
TW (1) TWI743555B (enExample)
WO (1) WO2020051138A1 (enExample)

Families Citing this family (9)

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Publication number Priority date Publication date Assignee Title
US11025241B2 (en) * 2018-12-20 2021-06-01 Samsung Electronics Co., Ltd. Comparator circuit and mobile device
WO2021255729A1 (en) * 2020-06-15 2021-12-23 Ariel Scientific Innovations Ltd. Control circuit for ring oscillator-based power controller
JP7647037B2 (ja) * 2020-09-08 2025-03-18 株式会社リコー 投光装置、物体検出装置、移動体、投光方法及びプログラム
CN114185393B (zh) * 2021-12-09 2023-05-26 中国人民解放军国防科技大学 加固电流镜电路及抗单粒子瞬态效应的加固方法
US12155245B2 (en) 2022-01-18 2024-11-26 Innoscience (suzhou) Semiconductor Co., Ltd. Nitride-based bidirectional switching device for battery management and method for manufacturing the same
EP4244893A4 (en) 2022-01-18 2023-11-29 Innoscience (Suzhou) Semiconductor Co., Ltd. NITRIDE BASED BIDIRECTIONAL SWITCHING DEVICE FOR BATTERY MANAGEMENT AND METHOD FOR PRODUCING THE SAME
US12143112B2 (en) 2022-10-12 2024-11-12 Globalfoundries U.S. Inc. Circuit for controlling the slew rate of a transistor
US12294364B2 (en) 2023-08-25 2025-05-06 Globalfoundries U.S. Inc. Transistor with integrated turn-off slew rate control
TWI901096B (zh) * 2024-04-25 2025-10-11 立錡科技股份有限公司 可防止突波的閘極驅動電路

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US5796276A (en) * 1994-12-30 1998-08-18 Sgs-Thomson Microelectronics, Inc. High-side-driver gate drive circuit
US6980034B2 (en) * 2002-08-30 2005-12-27 Cadence Design Systems, Inc. Adaptive, self-calibrating, low noise output driver
KR20050057535A (ko) * 2002-09-23 2005-06-16 코닌클리케 필립스 일렉트로닉스 엔.브이. 광감응성 요소를 구비한 매트릭스 디스플레이 디바이스
US7088127B2 (en) * 2003-09-12 2006-08-08 Rambus, Inc. Adaptive impedance output driver circuit
DE602005005060T2 (de) * 2005-09-30 2009-06-04 Infineon Technologies Ag Leistungsschaltkreis für eine Airbagzündpille
US8004318B2 (en) * 2006-11-21 2011-08-23 Nxp B.V. Circuit arrangement for controlling a high side CMOS transistor in a high voltage deep sub micron process
EP2354882B1 (en) * 2010-02-10 2017-04-26 Nxp B.V. Switchable current source circuit and method
US20120007660A1 (en) * 2010-07-08 2012-01-12 Derek Hummerston Bias Current Generator
JP2013013044A (ja) * 2011-05-31 2013-01-17 Sanken Electric Co Ltd ゲートドライブ回路
US9344077B2 (en) 2012-04-04 2016-05-17 Cree, Inc. High voltage driver
US8742803B2 (en) * 2012-09-26 2014-06-03 Broadcom Corporation Output driver using low voltage transistors
US9564794B2 (en) * 2013-12-04 2017-02-07 Broadcom Corporation System, apparatus, and method for a ping-pong charge pump
US9960620B2 (en) * 2014-09-16 2018-05-01 Navitas Semiconductor, Inc. Bootstrap capacitor charging circuit for GaN devices
US9985626B2 (en) * 2015-01-30 2018-05-29 Navitas Semiconductor, Inc. Bidirectional GaN switch with built-in bias supply and integrated gate drivers
JP6296082B2 (ja) * 2016-03-09 2018-03-20 トヨタ自動車株式会社 駆動装置
WO2017190652A1 (en) 2016-05-04 2017-11-09 The Hong Kong University Of Science And Technology Power device with integrated gate driver
CN108462485B (zh) * 2017-02-22 2022-02-08 中芯国际集成电路制造(上海)有限公司 一种延时电路及电子装置

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