TWI743555B - 基於GaN之可調電流驅動器電路 - Google Patents

基於GaN之可調電流驅動器電路 Download PDF

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Publication number
TWI743555B
TWI743555B TW108131917A TW108131917A TWI743555B TW I743555 B TWI743555 B TW I743555B TW 108131917 A TW108131917 A TW 108131917A TW 108131917 A TW108131917 A TW 108131917A TW I743555 B TWI743555 B TW I743555B
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TW
Taiwan
Prior art keywords
current
transistor
capacitor
power transistor
supply voltage
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Application number
TW108131917A
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English (en)
Chinese (zh)
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TW202025606A (zh
Inventor
愛德華 李
拉維 阿南斯
麥可 強普曼
約翰 Ｓ 葛雷瑟
史蒂芬 Ｌ 柯里諾
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美商高效電源轉換公司
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Application filed by 美商高效電源轉換公司 filed Critical 美商高效電源轉換公司
Publication of TW202025606A publication Critical patent/TW202025606A/zh
Application granted granted Critical
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4868—Controlling received signal intensity or exposure of sensor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/002—Switching arrangements with several input- or output terminals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/484—Transmitters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0081—Power supply means, e.g. to the switch driver

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Remote Sensing (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
TW108131917A 2018-09-05 2019-09-04 基於GaN之可調電流驅動器電路 TWI743555B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862727115P 2018-09-05 2018-09-05
US62/727,115 2018-09-05

Publications (2)

Publication Number Publication Date
TW202025606A TW202025606A (zh) 2020-07-01
TWI743555B true TWI743555B (zh) 2021-10-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW108131917A TWI743555B (zh) 2018-09-05 2019-09-04 基於GaN之可調電流驅動器電路

Country Status (7)

Country Link
US (1) US10749514B2 (enExample)
EP (1) EP3847739A4 (enExample)
JP (1) JP7612567B2 (enExample)
KR (1) KR102674752B1 (enExample)
CN (1) CN112956119B (enExample)
TW (1) TWI743555B (enExample)
WO (1) WO2020051138A1 (enExample)

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US11025241B2 (en) * 2018-12-20 2021-06-01 Samsung Electronics Co., Ltd. Comparator circuit and mobile device
WO2021255729A1 (en) * 2020-06-15 2021-12-23 Ariel Scientific Innovations Ltd. Control circuit for ring oscillator-based power controller
JP7647037B2 (ja) * 2020-09-08 2025-03-18 株式会社リコー 投光装置、物体検出装置、移動体、投光方法及びプログラム
CN114185393B (zh) * 2021-12-09 2023-05-26 中国人民解放军国防科技大学 加固电流镜电路及抗单粒子瞬态效应的加固方法
US12155245B2 (en) 2022-01-18 2024-11-26 Innoscience (suzhou) Semiconductor Co., Ltd. Nitride-based bidirectional switching device for battery management and method for manufacturing the same
EP4244893A4 (en) 2022-01-18 2023-11-29 Innoscience (Suzhou) Semiconductor Co., Ltd. NITRIDE BASED BIDIRECTIONAL SWITCHING DEVICE FOR BATTERY MANAGEMENT AND METHOD FOR PRODUCING THE SAME
US12143112B2 (en) 2022-10-12 2024-11-12 Globalfoundries U.S. Inc. Circuit for controlling the slew rate of a transistor
US12294364B2 (en) 2023-08-25 2025-05-06 Globalfoundries U.S. Inc. Transistor with integrated turn-off slew rate control
TWI901096B (zh) * 2024-04-25 2025-10-11 立錡科技股份有限公司 可防止突波的閘極驅動電路

Citations (2)

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US8004318B2 (en) * 2006-11-21 2011-08-23 Nxp B.V. Circuit arrangement for controlling a high side CMOS transistor in a high voltage deep sub micron process
TW201624924A (zh) * 2014-09-16 2016-07-01 納維達斯半導體公司 使用氮化鎵裝置半橋功率轉換電路

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US5796276A (en) * 1994-12-30 1998-08-18 Sgs-Thomson Microelectronics, Inc. High-side-driver gate drive circuit
US6980034B2 (en) * 2002-08-30 2005-12-27 Cadence Design Systems, Inc. Adaptive, self-calibrating, low noise output driver
KR20050057535A (ko) * 2002-09-23 2005-06-16 코닌클리케 필립스 일렉트로닉스 엔.브이. 광감응성 요소를 구비한 매트릭스 디스플레이 디바이스
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TW201624924A (zh) * 2014-09-16 2016-07-01 納維達斯半導體公司 使用氮化鎵裝置半橋功率轉換電路
TW201629665A (zh) * 2014-09-16 2016-08-16 納維達斯半導體公司 用於氮化鎵電路負載之氮化鎵電路驅動器

Also Published As

Publication number Publication date
CN112956119B (zh) 2024-11-05
JP2021536702A (ja) 2021-12-27
US20200076413A1 (en) 2020-03-05
KR102674752B1 (ko) 2024-06-14
WO2020051138A1 (en) 2020-03-12
US10749514B2 (en) 2020-08-18
EP3847739A1 (en) 2021-07-14
TW202025606A (zh) 2020-07-01
CN112956119A (zh) 2021-06-11
KR20210053329A (ko) 2021-05-11
JP7612567B2 (ja) 2025-01-14
EP3847739A4 (en) 2022-07-06

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