CN112956119B - 基于GaN的可调电流驱动器电路 - Google Patents

基于GaN的可调电流驱动器电路 Download PDF

Info

Publication number
CN112956119B
CN112956119B CN201980071354.6A CN201980071354A CN112956119B CN 112956119 B CN112956119 B CN 112956119B CN 201980071354 A CN201980071354 A CN 201980071354A CN 112956119 B CN112956119 B CN 112956119B
Authority
CN
China
Prior art keywords
current
fet
circuit
gate
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201980071354.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN112956119A (zh
Inventor
李剑锋
R·阿南思
M·查普曼
J·格拉泽
斯蒂芬·L·克林诺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Efficient Power Conversion Corp
Original Assignee
Efficient Power Conversion Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Efficient Power Conversion Corp filed Critical Efficient Power Conversion Corp
Publication of CN112956119A publication Critical patent/CN112956119A/zh
Application granted granted Critical
Publication of CN112956119B publication Critical patent/CN112956119B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is DC
    • G05F3/10Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26Current mirrors
    • G05F3/262Current mirrors using field-effect transistors only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H03K5/2472Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88Lidar systems specially adapted for specific applications
    • G01S17/89Lidar systems specially adapted for specific applications for mapping or imaging
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483Details of pulse systems
    • G01S7/486Receivers
    • G01S7/4868Controlling received signal intensity or exposure of sensor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/002Switching arrangements with several input- or output terminals
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04Modifications for accelerating switching
    • H03K17/041Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483Details of pulse systems
    • G01S7/484Transmitters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0081Power supply means, e.g. to the switch driver

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Remote Sensing (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
CN201980071354.6A 2018-09-05 2019-09-03 基于GaN的可调电流驱动器电路 Active CN112956119B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862727115P 2018-09-05 2018-09-05
US62/727,115 2018-09-05
PCT/US2019/049341 WO2020051138A1 (en) 2018-09-05 2019-09-03 Gan based adjustable current driver circuit

Publications (2)

Publication Number Publication Date
CN112956119A CN112956119A (zh) 2021-06-11
CN112956119B true CN112956119B (zh) 2024-11-05

Family

ID=69640256

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980071354.6A Active CN112956119B (zh) 2018-09-05 2019-09-03 基于GaN的可调电流驱动器电路

Country Status (7)

Country Link
US (1) US10749514B2 (enExample)
EP (1) EP3847739A4 (enExample)
JP (1) JP7612567B2 (enExample)
KR (1) KR102674752B1 (enExample)
CN (1) CN112956119B (enExample)
TW (1) TWI743555B (enExample)
WO (1) WO2020051138A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11025241B2 (en) * 2018-12-20 2021-06-01 Samsung Electronics Co., Ltd. Comparator circuit and mobile device
WO2021255729A1 (en) * 2020-06-15 2021-12-23 Ariel Scientific Innovations Ltd. Control circuit for ring oscillator-based power controller
JP7647037B2 (ja) * 2020-09-08 2025-03-18 株式会社リコー 投光装置、物体検出装置、移動体、投光方法及びプログラム
CN114185393B (zh) * 2021-12-09 2023-05-26 中国人民解放军国防科技大学 加固电流镜电路及抗单粒子瞬态效应的加固方法
US12155245B2 (en) 2022-01-18 2024-11-26 Innoscience (suzhou) Semiconductor Co., Ltd. Nitride-based bidirectional switching device for battery management and method for manufacturing the same
EP4244893A4 (en) 2022-01-18 2023-11-29 Innoscience (Suzhou) Semiconductor Co., Ltd. NITRIDE BASED BIDIRECTIONAL SWITCHING DEVICE FOR BATTERY MANAGEMENT AND METHOD FOR PRODUCING THE SAME
US12143112B2 (en) 2022-10-12 2024-11-12 Globalfoundries U.S. Inc. Circuit for controlling the slew rate of a transistor
US12294364B2 (en) 2023-08-25 2025-05-06 Globalfoundries U.S. Inc. Transistor with integrated turn-off slew rate control
TWI901096B (zh) * 2024-04-25 2025-10-11 立錡科技股份有限公司 可防止突波的閘極驅動電路

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3835119A1 (de) * 1988-10-14 1990-04-19 Siemens Ag Leistungsverstaerkerschaltung fuer integrierte digitalschaltungen
US5796276A (en) * 1994-12-30 1998-08-18 Sgs-Thomson Microelectronics, Inc. High-side-driver gate drive circuit
US6980034B2 (en) * 2002-08-30 2005-12-27 Cadence Design Systems, Inc. Adaptive, self-calibrating, low noise output driver
KR20050057535A (ko) * 2002-09-23 2005-06-16 코닌클리케 필립스 일렉트로닉스 엔.브이. 광감응성 요소를 구비한 매트릭스 디스플레이 디바이스
US7088127B2 (en) * 2003-09-12 2006-08-08 Rambus, Inc. Adaptive impedance output driver circuit
DE602005005060T2 (de) * 2005-09-30 2009-06-04 Infineon Technologies Ag Leistungsschaltkreis für eine Airbagzündpille
US8004318B2 (en) * 2006-11-21 2011-08-23 Nxp B.V. Circuit arrangement for controlling a high side CMOS transistor in a high voltage deep sub micron process
EP2354882B1 (en) * 2010-02-10 2017-04-26 Nxp B.V. Switchable current source circuit and method
US20120007660A1 (en) * 2010-07-08 2012-01-12 Derek Hummerston Bias Current Generator
JP2013013044A (ja) * 2011-05-31 2013-01-17 Sanken Electric Co Ltd ゲートドライブ回路
US9344077B2 (en) 2012-04-04 2016-05-17 Cree, Inc. High voltage driver
US8742803B2 (en) * 2012-09-26 2014-06-03 Broadcom Corporation Output driver using low voltage transistors
US9564794B2 (en) * 2013-12-04 2017-02-07 Broadcom Corporation System, apparatus, and method for a ping-pong charge pump
US9960620B2 (en) * 2014-09-16 2018-05-01 Navitas Semiconductor, Inc. Bootstrap capacitor charging circuit for GaN devices
US9985626B2 (en) * 2015-01-30 2018-05-29 Navitas Semiconductor, Inc. Bidirectional GaN switch with built-in bias supply and integrated gate drivers
JP6296082B2 (ja) * 2016-03-09 2018-03-20 トヨタ自動車株式会社 駆動装置
WO2017190652A1 (en) 2016-05-04 2017-11-09 The Hong Kong University Of Science And Technology Power device with integrated gate driver
CN108462485B (zh) * 2017-02-22 2022-02-08 中芯国际集成电路制造(上海)有限公司 一种延时电路及电子装置

Also Published As

Publication number Publication date
JP2021536702A (ja) 2021-12-27
US20200076413A1 (en) 2020-03-05
KR102674752B1 (ko) 2024-06-14
WO2020051138A1 (en) 2020-03-12
US10749514B2 (en) 2020-08-18
EP3847739A1 (en) 2021-07-14
TW202025606A (zh) 2020-07-01
CN112956119A (zh) 2021-06-11
TWI743555B (zh) 2021-10-21
KR20210053329A (ko) 2021-05-11
JP7612567B2 (ja) 2025-01-14
EP3847739A4 (en) 2022-07-06

Similar Documents

Publication Publication Date Title
CN112956119B (zh) 基于GaN的可调电流驱动器电路
US10680589B2 (en) GaN based fail-safe shutdown of high-current drivers
US11075502B2 (en) Laser diode driver circuit techniques
US10454246B2 (en) Optical pulse emitter
US5598119A (en) Method and apparatus for a load adaptive pad driver
CN105469742B (zh) 一种有机发光显示器及显示装置
JPH0670540A (ja) 電流制限出力を有するシステム及び電源回路
US7180330B2 (en) Output circuit
US20210021098A1 (en) High current nanosecond laser driver circuit with wide pulse-width adjustment range
US20220069545A1 (en) Controlling optical pulse shape of a laser diode
JP2015179436A (ja) 発光素子の駆動回路、光源装置および発光素子の駆動方法
JP2014096405A (ja) 光送信回路
JP2017005565A (ja) ハイサイドドライバ回路及び半導体装置
EP1311040A1 (en) Light-emitting device drive circuit
US10236987B2 (en) Circuit arrangement, light-emitting diode assembly, and method of actuating an optoelectronic component
CN112425053A (zh) 具有集成的总线升压电路的电流脉冲发生器
JP2016171487A (ja) 駆動回路
US20230417881A1 (en) Light Emitting Device
US4476402A (en) VMOS-FET IMPATT diode pulse bias circuit
CN113037260A (zh) 一种信号开关管的驱动电路以及信号传输电路
JP7231025B2 (ja) 半導体レーザ装置
TWI575829B (zh) 加快雷射二極體發光的控制方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant