JP7612567B2 - ＧａＮを基にした調節可能な電流ドライバ回路 - Google Patents

ＧａＮを基にした調節可能な電流ドライバ回路 Download PDF

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Publication number
JP7612567B2
JP7612567B2 JP2021512507A JP2021512507A JP7612567B2 JP 7612567 B2 JP7612567 B2 JP 7612567B2 JP 2021512507 A JP2021512507 A JP 2021512507A JP 2021512507 A JP2021512507 A JP 2021512507A JP 7612567 B2 JP7612567 B2 JP 7612567B2
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current
transistor
power transistor
storage capacitor
gate
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Japanese (ja)
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JP2021536702A (ja
JP2021536702A5 (enExample
Inventor
エドワード・リー
ラヴィ・アナンス
マイケル・チャップマン
ジョン・エス・グレイザー
スティーヴン・エル・コリーノ
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エフィシェント・パワー・コンバージョン・コーポレイション
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4868—Controlling received signal intensity or exposure of sensor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/002—Switching arrangements with several input- or output terminals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/484—Transmitters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0081—Power supply means, e.g. to the switch driver

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Remote Sensing (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
JP2021512507A 2018-09-05 2019-09-03 ＧａＮを基にした調節可能な電流ドライバ回路 Active JP7612567B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862727115P 2018-09-05 2018-09-05
US62/727,115 2018-09-05
PCT/US2019/049341 WO2020051138A1 (en) 2018-09-05 2019-09-03 Gan based adjustable current driver circuit

Publications (3)

Publication Number Publication Date
JP2021536702A JP2021536702A (ja) 2021-12-27
JP2021536702A5 JP2021536702A5 (enExample) 2022-09-12
JP7612567B2 true JP7612567B2 (ja) 2025-01-14

Family

ID=69640256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021512507A Active JP7612567B2 (ja) 2018-09-05 2019-09-03 ＧａＮを基にした調節可能な電流ドライバ回路

Country Status (7)

Country Link
US (1) US10749514B2 (enExample)
EP (1) EP3847739A4 (enExample)
JP (1) JP7612567B2 (enExample)
KR (1) KR102674752B1 (enExample)
CN (1) CN112956119B (enExample)
TW (1) TWI743555B (enExample)
WO (1) WO2020051138A1 (enExample)

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* Cited by examiner, † Cited by third party
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US11025241B2 (en) * 2018-12-20 2021-06-01 Samsung Electronics Co., Ltd. Comparator circuit and mobile device
WO2021255729A1 (en) * 2020-06-15 2021-12-23 Ariel Scientific Innovations Ltd. Control circuit for ring oscillator-based power controller
JP7647037B2 (ja) * 2020-09-08 2025-03-18 株式会社リコー 投光装置、物体検出装置、移動体、投光方法及びプログラム
CN114185393B (zh) * 2021-12-09 2023-05-26 中国人民解放军国防科技大学 加固电流镜电路及抗单粒子瞬态效应的加固方法
US12155245B2 (en) 2022-01-18 2024-11-26 Innoscience (suzhou) Semiconductor Co., Ltd. Nitride-based bidirectional switching device for battery management and method for manufacturing the same
EP4244893A4 (en) 2022-01-18 2023-11-29 Innoscience (Suzhou) Semiconductor Co., Ltd. NITRIDE BASED BIDIRECTIONAL SWITCHING DEVICE FOR BATTERY MANAGEMENT AND METHOD FOR PRODUCING THE SAME
US12143112B2 (en) 2022-10-12 2024-11-12 Globalfoundries U.S. Inc. Circuit for controlling the slew rate of a transistor
US12294364B2 (en) 2023-08-25 2025-05-06 Globalfoundries U.S. Inc. Transistor with integrated turn-off slew rate control
TWI901096B (zh) * 2024-04-25 2025-10-11 立錡科技股份有限公司 可防止突波的閘極驅動電路

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100052774A1 (en) 2006-11-21 2010-03-04 Nxp, B.V. Circuit arrangement for controlling a high side cmos transistor in a high voltage deep sub micron process
US20110193613A1 (en) 2010-02-10 2011-08-11 Nxp B.V. Switchable current source circuit and method
JP2015520537A (ja) 2012-04-04 2015-07-16 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． 高電圧ドライバ

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DE3835119A1 (de) * 1988-10-14 1990-04-19 Siemens Ag Leistungsverstaerkerschaltung fuer integrierte digitalschaltungen
US5796276A (en) * 1994-12-30 1998-08-18 Sgs-Thomson Microelectronics, Inc. High-side-driver gate drive circuit
US6980034B2 (en) * 2002-08-30 2005-12-27 Cadence Design Systems, Inc. Adaptive, self-calibrating, low noise output driver
KR20050057535A (ko) * 2002-09-23 2005-06-16 코닌클리케 필립스 일렉트로닉스 엔.브이. 광감응성 요소를 구비한 매트릭스 디스플레이 디바이스
US7088127B2 (en) * 2003-09-12 2006-08-08 Rambus, Inc. Adaptive impedance output driver circuit
DE602005005060T2 (de) * 2005-09-30 2009-06-04 Infineon Technologies Ag Leistungsschaltkreis für eine Airbagzündpille
US20120007660A1 (en) * 2010-07-08 2012-01-12 Derek Hummerston Bias Current Generator
JP2013013044A (ja) * 2011-05-31 2013-01-17 Sanken Electric Co Ltd ゲートドライブ回路
US8742803B2 (en) * 2012-09-26 2014-06-03 Broadcom Corporation Output driver using low voltage transistors
US9564794B2 (en) * 2013-12-04 2017-02-07 Broadcom Corporation System, apparatus, and method for a ping-pong charge pump
US9960620B2 (en) * 2014-09-16 2018-05-01 Navitas Semiconductor, Inc. Bootstrap capacitor charging circuit for GaN devices
US9985626B2 (en) * 2015-01-30 2018-05-29 Navitas Semiconductor, Inc. Bidirectional GaN switch with built-in bias supply and integrated gate drivers
JP6296082B2 (ja) * 2016-03-09 2018-03-20 トヨタ自動車株式会社 駆動装置
WO2017190652A1 (en) 2016-05-04 2017-11-09 The Hong Kong University Of Science And Technology Power device with integrated gate driver
CN108462485B (zh) * 2017-02-22 2022-02-08 中芯国际集成电路制造(上海)有限公司 一种延时电路及电子装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100052774A1 (en) 2006-11-21 2010-03-04 Nxp, B.V. Circuit arrangement for controlling a high side cmos transistor in a high voltage deep sub micron process
US20110193613A1 (en) 2010-02-10 2011-08-11 Nxp B.V. Switchable current source circuit and method
JP2015520537A (ja) 2012-04-04 2015-07-16 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． 高電圧ドライバ

Also Published As

Publication number Publication date
CN112956119B (zh) 2024-11-05
JP2021536702A (ja) 2021-12-27
US20200076413A1 (en) 2020-03-05
KR102674752B1 (ko) 2024-06-14
WO2020051138A1 (en) 2020-03-12
US10749514B2 (en) 2020-08-18
EP3847739A1 (en) 2021-07-14
TW202025606A (zh) 2020-07-01
CN112956119A (zh) 2021-06-11
TWI743555B (zh) 2021-10-21
KR20210053329A (ko) 2021-05-11
EP3847739A4 (en) 2022-07-06

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