KR102674752B1 - GaN 기반 조정 가능한 전류 드라이버 회로 - Google Patents

GaN 기반 조정 가능한 전류 드라이버 회로 Download PDF

Info

Publication number
KR102674752B1
KR102674752B1 KR1020217010022A KR20217010022A KR102674752B1 KR 102674752 B1 KR102674752 B1 KR 102674752B1 KR 1020217010022 A KR1020217010022 A KR 1020217010022A KR 20217010022 A KR20217010022 A KR 20217010022A KR 102674752 B1 KR102674752 B1 KR 102674752B1
Authority
KR
South Korea
Prior art keywords
current
transistor
power transistor
circuit
driver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020217010022A
Other languages
English (en)
Korean (ko)
Other versions
KR20210053329A (ko
Inventor
에드워드 리
라비 아난스
마이클 채프먼
존 에스. 글레이저
스티븐 엘. 콜리노
Original Assignee
이피션트 파워 컨버젼 코퍼레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이피션트 파워 컨버젼 코퍼레이션 filed Critical 이피션트 파워 컨버젼 코퍼레이션
Publication of KR20210053329A publication Critical patent/KR20210053329A/ko
Application granted granted Critical
Publication of KR102674752B1 publication Critical patent/KR102674752B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4868—Controlling received signal intensity or exposure of sensor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/002—Switching arrangements with several input- or output terminals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/484—Transmitters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0081—Power supply means, e.g. to the switch driver

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Remote Sensing (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
KR1020217010022A 2018-09-05 2019-09-03 GaN 기반 조정 가능한 전류 드라이버 회로 Active KR102674752B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862727115P 2018-09-05 2018-09-05
US62/727,115 2018-09-05
PCT/US2019/049341 WO2020051138A1 (en) 2018-09-05 2019-09-03 Gan based adjustable current driver circuit

Publications (2)

Publication Number Publication Date
KR20210053329A KR20210053329A (ko) 2021-05-11
KR102674752B1 true KR102674752B1 (ko) 2024-06-14

Family

ID=69640256

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217010022A Active KR102674752B1 (ko) 2018-09-05 2019-09-03 GaN 기반 조정 가능한 전류 드라이버 회로

Country Status (7)

Country Link
US (1) US10749514B2 (enExample)
EP (1) EP3847739A4 (enExample)
JP (1) JP7612567B2 (enExample)
KR (1) KR102674752B1 (enExample)
CN (1) CN112956119B (enExample)
TW (1) TWI743555B (enExample)
WO (1) WO2020051138A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11025241B2 (en) * 2018-12-20 2021-06-01 Samsung Electronics Co., Ltd. Comparator circuit and mobile device
WO2021255729A1 (en) * 2020-06-15 2021-12-23 Ariel Scientific Innovations Ltd. Control circuit for ring oscillator-based power controller
JP7647037B2 (ja) * 2020-09-08 2025-03-18 株式会社リコー 投光装置、物体検出装置、移動体、投光方法及びプログラム
CN114185393B (zh) * 2021-12-09 2023-05-26 中国人民解放军国防科技大学 加固电流镜电路及抗单粒子瞬态效应的加固方法
US12155245B2 (en) 2022-01-18 2024-11-26 Innoscience (suzhou) Semiconductor Co., Ltd. Nitride-based bidirectional switching device for battery management and method for manufacturing the same
EP4244893A4 (en) 2022-01-18 2023-11-29 Innoscience (Suzhou) Semiconductor Co., Ltd. NITRIDE BASED BIDIRECTIONAL SWITCHING DEVICE FOR BATTERY MANAGEMENT AND METHOD FOR PRODUCING THE SAME
US12143112B2 (en) 2022-10-12 2024-11-12 Globalfoundries U.S. Inc. Circuit for controlling the slew rate of a transistor
US12294364B2 (en) 2023-08-25 2025-05-06 Globalfoundries U.S. Inc. Transistor with integrated turn-off slew rate control
TWI901096B (zh) * 2024-04-25 2025-10-11 立錡科技股份有限公司 可防止突波的閘極驅動電路

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140084962A1 (en) 2012-09-26 2014-03-27 Broadcom Corporation Output driver using low voltage transistors

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3835119A1 (de) * 1988-10-14 1990-04-19 Siemens Ag Leistungsverstaerkerschaltung fuer integrierte digitalschaltungen
US5796276A (en) * 1994-12-30 1998-08-18 Sgs-Thomson Microelectronics, Inc. High-side-driver gate drive circuit
US6980034B2 (en) * 2002-08-30 2005-12-27 Cadence Design Systems, Inc. Adaptive, self-calibrating, low noise output driver
KR20050057535A (ko) * 2002-09-23 2005-06-16 코닌클리케 필립스 일렉트로닉스 엔.브이. 광감응성 요소를 구비한 매트릭스 디스플레이 디바이스
US7088127B2 (en) * 2003-09-12 2006-08-08 Rambus, Inc. Adaptive impedance output driver circuit
DE602005005060T2 (de) * 2005-09-30 2009-06-04 Infineon Technologies Ag Leistungsschaltkreis für eine Airbagzündpille
US8004318B2 (en) * 2006-11-21 2011-08-23 Nxp B.V. Circuit arrangement for controlling a high side CMOS transistor in a high voltage deep sub micron process
EP2354882B1 (en) * 2010-02-10 2017-04-26 Nxp B.V. Switchable current source circuit and method
US20120007660A1 (en) * 2010-07-08 2012-01-12 Derek Hummerston Bias Current Generator
JP2013013044A (ja) * 2011-05-31 2013-01-17 Sanken Electric Co Ltd ゲートドライブ回路
US9344077B2 (en) 2012-04-04 2016-05-17 Cree, Inc. High voltage driver
US9564794B2 (en) * 2013-12-04 2017-02-07 Broadcom Corporation System, apparatus, and method for a ping-pong charge pump
US9960620B2 (en) * 2014-09-16 2018-05-01 Navitas Semiconductor, Inc. Bootstrap capacitor charging circuit for GaN devices
US9985626B2 (en) * 2015-01-30 2018-05-29 Navitas Semiconductor, Inc. Bidirectional GaN switch with built-in bias supply and integrated gate drivers
JP6296082B2 (ja) * 2016-03-09 2018-03-20 トヨタ自動車株式会社 駆動装置
WO2017190652A1 (en) 2016-05-04 2017-11-09 The Hong Kong University Of Science And Technology Power device with integrated gate driver
CN108462485B (zh) * 2017-02-22 2022-02-08 中芯国际集成电路制造(上海)有限公司 一种延时电路及电子装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140084962A1 (en) 2012-09-26 2014-03-27 Broadcom Corporation Output driver using low voltage transistors

Also Published As

Publication number Publication date
CN112956119B (zh) 2024-11-05
JP2021536702A (ja) 2021-12-27
US20200076413A1 (en) 2020-03-05
WO2020051138A1 (en) 2020-03-12
US10749514B2 (en) 2020-08-18
EP3847739A1 (en) 2021-07-14
TW202025606A (zh) 2020-07-01
CN112956119A (zh) 2021-06-11
TWI743555B (zh) 2021-10-21
KR20210053329A (ko) 2021-05-11
JP7612567B2 (ja) 2025-01-14
EP3847739A4 (en) 2022-07-06

Similar Documents

Publication Publication Date Title
KR102674752B1 (ko) GaN 기반 조정 가능한 전류 드라이버 회로
US10680589B2 (en) GaN based fail-safe shutdown of high-current drivers
US11557970B2 (en) Resonant rectified discontinuous switching regulator with inductor preflux
US10848145B2 (en) Driver circuit, switching control circuit, and switching device
TWI662392B (zh) 降低低電流穩壓器輸出端的負脈衝訊號的電路及其方法
US10855263B2 (en) Miller Clamp driver with feedback bias control
US7180330B2 (en) Output circuit
US10763642B2 (en) Driver circuit and processing device
JP2014096405A (ja) 光送信回路
US20210304941A1 (en) Systems and methods to safely discharge inductors without energy limitations
KR102306073B1 (ko) 집적된 버스 부스트 회로를 갖는 전류 펄스 발생기
US20230417881A1 (en) Light Emitting Device
US12470141B2 (en) Inductor flux control circuits
US4476402A (en) VMOS-FET IMPATT diode pulse bias circuit
KR20150018014A (ko) 전력 스위치의 음전압 발진 방지 회로 및 방법

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20210405

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20220715

Comment text: Request for Examination of Application

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20240322

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20240610

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20240611

End annual number: 3

Start annual number: 1

PG1601 Publication of registration