JP2021535542A - 乗数モードを用いる高周波（ｒｆ）パルスインピーダンス同調 - Google Patents

乗数モードを用いる高周波（ｒｆ）パルスインピーダンス同調 Download PDF

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Publication number
JP2021535542A
JP2021535542A JP2021505925A JP2021505925A JP2021535542A JP 2021535542 A JP2021535542 A JP 2021535542A JP 2021505925 A JP2021505925 A JP 2021505925A JP 2021505925 A JP2021505925 A JP 2021505925A JP 2021535542 A JP2021535542 A JP 2021535542A
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generator
power
generators
command set
frequency
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JP2021505925A
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Japanese (ja)
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JPWO2020046990A5 (https=
JP2021535542A5 (https=
Inventor
勝正 川崎
ジャスティン フィ
カーティク ラマスワミ
セルジオ フクダ ショージ
大亮 清水
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2021535542A publication Critical patent/JP2021535542A/ja
Publication of JPWO2020046990A5 publication Critical patent/JPWO2020046990A5/ja
Publication of JP2021535542A5 publication Critical patent/JP2021535542A5/ja
Priority to JP2024084068A priority Critical patent/JP2024112933A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Drying Of Semiconductors (AREA)
JP2021505925A 2018-08-30 2019-08-27 乗数モードを用いる高周波（ｒｆ）パルスインピーダンス同調 Pending JP2021535542A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024084068A JP2024112933A (ja) 2018-08-30 2024-05-23 乗数モードを用いる高周波（ｒｆ）パルスインピーダンス同調

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/117,457 2018-08-30
US16/117,457 US10854427B2 (en) 2018-08-30 2018-08-30 Radio frequency (RF) pulsing impedance tuning with multiplier mode
PCT/US2019/048407 WO2020046990A1 (en) 2018-08-30 2019-08-27 Radio frequency (rf) pulsing impedance tuning with multiplier mode

Related Child Applications (1)

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JP2024084068A Division JP2024112933A (ja) 2018-08-30 2024-05-23 乗数モードを用いる高周波（ｒｆ）パルスインピーダンス同調

Publications (3)

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JP2021535542A true JP2021535542A (ja) 2021-12-16
JPWO2020046990A5 JPWO2020046990A5 (https=) 2022-08-09
JP2021535542A5 JP2021535542A5 (https=) 2022-08-09

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JP2021505925A Pending JP2021535542A (ja) 2018-08-30 2019-08-27 乗数モードを用いる高周波（ｒｆ）パルスインピーダンス同調
JP2024084068A Pending JP2024112933A (ja) 2018-08-30 2024-05-23 乗数モードを用いる高周波（ｒｆ）パルスインピーダンス同調

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Country Status (6)

Country Link
US (1) US10854427B2 (https=)
JP (2) JP2021535542A (https=)
KR (1) KR20210040161A (https=)
CN (1) CN112585716B (https=)
TW (1) TWI856971B (https=)
WO (1) WO2020046990A1 (https=)

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JP2024004893A (ja) * 2022-06-29 2024-01-17 東京エレクトロン株式会社 プラズマ処理システムおよびプラズマ処理方法

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US10424467B2 (en) * 2017-03-13 2019-09-24 Applied Materials, Inc. Smart RF pulsing tuning using variable frequency generators
US12505986B2 (en) 2017-11-17 2025-12-23 Advanced Energy Industries, Inc. Synchronization of plasma processing components
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KR20220123284A (ko) * 2020-05-01 2022-09-06 매슨 테크놀로지 인크 표면 트리트먼트 처리를 위한 펄스 유도 결합 플라즈마의 방법 및 장치
US12609283B2 (en) 2020-06-15 2026-04-21 Lam Research Corporation Control of pulsing frequencies and duty cycles of parameters of RF signals
KR20260048616A (ko) * 2020-07-15 2026-04-10 램 리써치 코포레이션 플라즈마 챔버의 rf 코일들의 역 동기화된 펄싱
JP7536540B2 (ja) * 2020-07-16 2024-08-20 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
TWI906346B (zh) * 2020-08-31 2025-12-01 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理方法
JP7575353B2 (ja) * 2020-08-31 2024-10-29 東京エレクトロン株式会社 プラズマ処理装置
CN114188204B (zh) * 2020-09-14 2023-10-31 中微半导体设备(上海)股份有限公司 一种等离子体处理方法、射频发生器以及装置
CN116779407A (zh) * 2020-10-13 2023-09-19 北京北方华创微电子装备有限公司 获取方法、阻抗匹配器及其方法和半导体工艺设备
KR20230114184A (ko) 2020-12-08 2023-08-01 램 리써치 코포레이션 저 주파수 RF 생성기 및 연관된 정전 척 (electrostatic chuck)
TW202243549A (zh) * 2021-04-22 2022-11-01 大陸商北京屹唐半導體科技股份有限公司 用於感應耦合電漿（ｉｃｐ）負載的雙頻匹配電路
US12451329B2 (en) 2021-06-02 2025-10-21 Tokyo Electron Limited Plasma processing apparatus with tunable electrical characteristic
EP4105963A1 (en) * 2021-06-17 2022-12-21 Impedans Ltd A controller for a matching unit of a plasma processing system
US11476090B1 (en) * 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US11694876B2 (en) * 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
KR20240140975A (ko) * 2022-02-04 2024-09-24 램 리써치 코포레이션 Hf rf 생성기와 연관된 반사 전력을 효율적으로 감소시키기 위한 시스템 및 방법
US12046449B2 (en) * 2022-04-22 2024-07-23 Applied Materials, Inc. Methods and apparatus for processing a substrate
US20230361242A1 (en) * 2022-05-04 2023-11-09 Applied Materials, Inc. Dry treatment for surface loss removal in micro-led structures
CN115015618B (zh) * 2022-08-08 2022-10-14 深圳市恒运昌真空技术有限公司 一种射频电源信号采集方法及装置
CN115015796B (zh) * 2022-08-08 2022-10-14 深圳市恒运昌真空技术有限公司 一种射频电源信号采集方法及装置
CN118588525A (zh) * 2023-03-03 2024-09-03 北京北方华创微电子装备有限公司 阻抗匹配方法、等离子体设备、电子设备及存储介质
CN119170473B (zh) * 2023-06-19 2025-10-10 北京北方华创微电子装备有限公司 半导体工艺设备及其脉冲调节等离子体方法
US20250191884A1 (en) * 2023-12-11 2025-06-12 Applied Materials, Inc. Pulsed voltage waveform biasing of plasma

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Publication number Priority date Publication date Assignee Title
JP2023094585A (ja) * 2021-12-23 2023-07-05 セメス カンパニー，リミテッド 基板処理装置、基板処理方法及びプラズマ発生方法
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Also Published As

Publication number Publication date
TWI856971B (zh) 2024-10-01
CN112585716B (zh) 2024-04-09
JP2024112933A (ja) 2024-08-21
US10854427B2 (en) 2020-12-01
KR20210040161A (ko) 2021-04-12
TW202017436A (zh) 2020-05-01
US20200075290A1 (en) 2020-03-05
CN112585716A (zh) 2021-03-30
WO2020046990A1 (en) 2020-03-05

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