CN112585716B - 具有乘数模式的射频(rf)脉冲阻抗调谐 - Google Patents

具有乘数模式的射频(rf)脉冲阻抗调谐 Download PDF

Info

Publication number
CN112585716B
CN112585716B CN201980054968.3A CN201980054968A CN112585716B CN 112585716 B CN112585716 B CN 112585716B CN 201980054968 A CN201980054968 A CN 201980054968A CN 112585716 B CN112585716 B CN 112585716B
Authority
CN
China
Prior art keywords
generator
power
generators
frequency
pulsed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201980054968.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN112585716A (zh
Inventor
川崎胜正
J·斐
K·拉马斯瓦米
S·F·秀吉
清水大亮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN112585716A publication Critical patent/CN112585716A/zh
Application granted granted Critical
Publication of CN112585716B publication Critical patent/CN112585716B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Drying Of Semiconductors (AREA)
CN201980054968.3A 2018-08-30 2019-08-27 具有乘数模式的射频(rf)脉冲阻抗调谐 Active CN112585716B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/117,457 2018-08-30
US16/117,457 US10854427B2 (en) 2018-08-30 2018-08-30 Radio frequency (RF) pulsing impedance tuning with multiplier mode
PCT/US2019/048407 WO2020046990A1 (en) 2018-08-30 2019-08-27 Radio frequency (rf) pulsing impedance tuning with multiplier mode

Publications (2)

Publication Number Publication Date
CN112585716A CN112585716A (zh) 2021-03-30
CN112585716B true CN112585716B (zh) 2024-04-09

Family

ID=69639075

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980054968.3A Active CN112585716B (zh) 2018-08-30 2019-08-27 具有乘数模式的射频(rf)脉冲阻抗调谐

Country Status (6)

Country Link
US (1) US10854427B2 (https=)
JP (2) JP2021535542A (https=)
KR (1) KR20210040161A (https=)
CN (1) CN112585716B (https=)
TW (1) TWI856971B (https=)
WO (1) WO2020046990A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220404785A1 (en) * 2021-06-17 2022-12-22 Impedans Ltd A controller for a matching unit of a plasma processing system

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12505980B2 (en) 2009-05-01 2025-12-23 Advanced Energy Industries, Inc. Apparatus to produce a waveform
US10424467B2 (en) * 2017-03-13 2019-09-24 Applied Materials, Inc. Smart RF pulsing tuning using variable frequency generators
US12505986B2 (en) 2017-11-17 2025-12-23 Advanced Energy Industries, Inc. Synchronization of plasma processing components
WO2020068107A1 (en) * 2018-09-28 2020-04-02 Lam Research Corporation Systems and methods for optimizing power delivery to an electrode of a plasma chamber
KR20220123284A (ko) * 2020-05-01 2022-09-06 매슨 테크놀로지 인크 표면 트리트먼트 처리를 위한 펄스 유도 결합 플라즈마의 방법 및 장치
US12609283B2 (en) 2020-06-15 2026-04-21 Lam Research Corporation Control of pulsing frequencies and duty cycles of parameters of RF signals
KR20260048616A (ko) * 2020-07-15 2026-04-10 램 리써치 코포레이션 플라즈마 챔버의 rf 코일들의 역 동기화된 펄싱
JP7536540B2 (ja) * 2020-07-16 2024-08-20 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
TWI906346B (zh) * 2020-08-31 2025-12-01 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理方法
JP7575353B2 (ja) * 2020-08-31 2024-10-29 東京エレクトロン株式会社 プラズマ処理装置
CN114188204B (zh) * 2020-09-14 2023-10-31 中微半导体设备(上海)股份有限公司 一种等离子体处理方法、射频发生器以及装置
CN116779407A (zh) * 2020-10-13 2023-09-19 北京北方华创微电子装备有限公司 获取方法、阻抗匹配器及其方法和半导体工艺设备
KR20230114184A (ko) 2020-12-08 2023-08-01 램 리써치 코포레이션 저 주파수 RF 생성기 및 연관된 정전 척 (electrostatic chuck)
TW202243549A (zh) * 2021-04-22 2022-11-01 大陸商北京屹唐半導體科技股份有限公司 用於感應耦合電漿（ｉｃｐ）負載的雙頻匹配電路
US12451329B2 (en) 2021-06-02 2025-10-21 Tokyo Electron Limited Plasma processing apparatus with tunable electrical characteristic
US11476090B1 (en) * 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US11694876B2 (en) * 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
KR102766926B1 (ko) * 2021-12-23 2025-02-14 세메스 주식회사 기판 처리 장치, 기판 처리 방법 및 플라즈마 발생 방법
KR20240140975A (ko) * 2022-02-04 2024-09-24 램 리써치 코포레이션 Hf rf 생성기와 연관된 반사 전력을 효율적으로 감소시키기 위한 시스템 및 방법
US12046449B2 (en) * 2022-04-22 2024-07-23 Applied Materials, Inc. Methods and apparatus for processing a substrate
US20230361242A1 (en) * 2022-05-04 2023-11-09 Applied Materials, Inc. Dry treatment for surface loss removal in micro-led structures
JP7577093B2 (ja) * 2022-06-29 2024-11-01 東京エレクトロン株式会社 プラズマ処理システムおよびプラズマ処理方法
CN115015618B (zh) * 2022-08-08 2022-10-14 深圳市恒运昌真空技术有限公司 一种射频电源信号采集方法及装置
CN115015796B (zh) * 2022-08-08 2022-10-14 深圳市恒运昌真空技术有限公司 一种射频电源信号采集方法及装置
CN118588525A (zh) * 2023-03-03 2024-09-03 北京北方华创微电子装备有限公司 阻抗匹配方法、等离子体设备、电子设备及存储介质
CN119170473B (zh) * 2023-06-19 2025-10-10 北京北方华创微电子装备有限公司 半导体工艺设备及其脉冲调节等离子体方法
US20250191884A1 (en) * 2023-12-11 2025-06-12 Applied Materials, Inc. Pulsed voltage waveform biasing of plasma

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015090759A (ja) * 2013-11-05 2015-05-11 東京エレクトロン株式会社 プラズマ処理装置
JP2016066593A (ja) * 2014-09-17 2016-04-28 東京エレクトロン株式会社 プラズマ処理装置
US9614524B1 (en) * 2015-11-28 2017-04-04 Applied Materials, Inc. Automatic impedance tuning with RF dual level pulsing
CN107221493A (zh) * 2016-03-22 2017-09-29 东京毅力科创株式会社 等离子体处理方法
CN108028165A (zh) * 2015-10-05 2018-05-11 应用材料公司 用于处理基板的射频功率传输调节
CN108028167A (zh) * 2015-10-03 2018-05-11 应用材料公司 具有近似锯齿波脉冲的rf功率传输
CN108028166A (zh) * 2015-10-13 2018-05-11 应用材料公司 用于处理基板的射频脉冲反射减量

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080236490A1 (en) * 2007-03-29 2008-10-02 Alexander Paterson Plasma reactor with an overhead inductive antenna and an overhead gas distribution showerhead
CN101287327B (zh) * 2007-04-13 2011-07-20 中微半导体设备(上海)有限公司 射频功率源系统及使用该射频功率源系统的等离子体反应腔室
US8404598B2 (en) 2009-08-07 2013-03-26 Applied Materials, Inc. Synchronized radio frequency pulsing for plasma etching
US10128090B2 (en) * 2012-02-22 2018-11-13 Lam Research Corporation RF impedance model based fault detection
TWI599272B (zh) * 2012-09-14 2017-09-11 蘭姆研究公司 根據三個或更多狀態之功率及頻率調整
WO2014164300A1 (en) * 2013-03-13 2014-10-09 Applied Materials, Inc Pulsed pc plasma etching process and apparatus
EP3162564B1 (en) * 2014-06-24 2020-10-28 Kyocera Document Solutions Inc. Adjustment mechanism, image-forming apparatus provided with adjustment mechanism, and adjustment method using said adjustment mechanism
US9544987B2 (en) * 2014-06-30 2017-01-10 Advanced Energy Industries, Inc. Frequency tuning for pulsed radio frequency plasma processing
KR101677748B1 (ko) * 2014-10-29 2016-11-29 삼성전자 주식회사 펄스 플라즈마 장치 및 펄스 플라즈마 장치 구동 방법
US9536749B2 (en) * 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
US9872373B1 (en) 2016-10-25 2018-01-16 Applied Materials, Inc. Smart multi-level RF pulsing methods
JP6770868B2 (ja) * 2016-10-26 2020-10-21 東京エレクトロン株式会社 プラズマ処理装置のインピーダンス整合のための方法
US10424467B2 (en) 2017-03-13 2019-09-24 Applied Materials, Inc. Smart RF pulsing tuning using variable frequency generators

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015090759A (ja) * 2013-11-05 2015-05-11 東京エレクトロン株式会社 プラズマ処理装置
JP2016066593A (ja) * 2014-09-17 2016-04-28 東京エレクトロン株式会社 プラズマ処理装置
CN108028167A (zh) * 2015-10-03 2018-05-11 应用材料公司 具有近似锯齿波脉冲的rf功率传输
CN108028165A (zh) * 2015-10-05 2018-05-11 应用材料公司 用于处理基板的射频功率传输调节
CN108028166A (zh) * 2015-10-13 2018-05-11 应用材料公司 用于处理基板的射频脉冲反射减量
US9614524B1 (en) * 2015-11-28 2017-04-04 Applied Materials, Inc. Automatic impedance tuning with RF dual level pulsing
CN107221493A (zh) * 2016-03-22 2017-09-29 东京毅力科创株式会社 等离子体处理方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220404785A1 (en) * 2021-06-17 2022-12-22 Impedans Ltd A controller for a matching unit of a plasma processing system
US12399474B2 (en) * 2021-06-17 2025-08-26 Impedans Ltd Controller for a matching unit of a plasma processing system

Also Published As

Publication number Publication date
TWI856971B (zh) 2024-10-01
JP2021535542A (ja) 2021-12-16
JP2024112933A (ja) 2024-08-21
US10854427B2 (en) 2020-12-01
KR20210040161A (ko) 2021-04-12
TW202017436A (zh) 2020-05-01
US20200075290A1 (en) 2020-03-05
CN112585716A (zh) 2021-03-30
WO2020046990A1 (en) 2020-03-05

Similar Documents

Publication Publication Date Title
CN112585716B (zh) 具有乘数模式的射频(rf)脉冲阻抗调谐
CN110313049B (zh) 利用变频产生器的智能rf脉冲调谐
JP6837053B2 (ja) 基板処理のためのｒｆパルス反射の低減
TWI716436B (zh) 用於處理基板之射頻功率傳輸調節
JP2018535504A (ja) 近似鋸歯状波パルス生成によるｒｆ電力供給
US9614524B1 (en) Automatic impedance tuning with RF dual level pulsing

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant