KR20210040161A - 승수 모드에 따른 무선 주파수(rf) 펄싱 임피던스 튜닝 - Google Patents

승수 모드에 따른 무선 주파수(rf) 펄싱 임피던스 튜닝 Download PDF

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KR20210040161A
KR20210040161A KR1020217009047A KR20217009047A KR20210040161A KR 20210040161 A KR20210040161 A KR 20210040161A KR 1020217009047 A KR1020217009047 A KR 1020217009047A KR 20217009047 A KR20217009047 A KR 20217009047A KR 20210040161 A KR20210040161 A KR 20210040161A
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South Korea
Prior art keywords
power
generator
pulsed
generators
frequency
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KR1020217009047A
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Korean (ko)
Inventor
카츠마사 카와사키
저스틴 피
카르틱 라마스와미
세르지오 후쿠다 쇼지
다이스케 시미즈
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어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20210040161A publication Critical patent/KR20210040161A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Drying Of Semiconductors (AREA)
KR1020217009047A 2018-08-30 2019-08-27 승수 모드에 따른 무선 주파수(rf) 펄싱 임피던스 튜닝 Ceased KR20210040161A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/117,457 2018-08-30
US16/117,457 US10854427B2 (en) 2018-08-30 2018-08-30 Radio frequency (RF) pulsing impedance tuning with multiplier mode
PCT/US2019/048407 WO2020046990A1 (en) 2018-08-30 2019-08-27 Radio frequency (rf) pulsing impedance tuning with multiplier mode

Publications (1)

Publication Number Publication Date
KR20210040161A true KR20210040161A (ko) 2021-04-12

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Application Number Title Priority Date Filing Date
KR1020217009047A Ceased KR20210040161A (ko) 2018-08-30 2019-08-27 승수 모드에 따른 무선 주파수(rf) 펄싱 임피던스 튜닝

Country Status (6)

Country Link
US (1) US10854427B2 (https=)
JP (2) JP2021535542A (https=)
KR (1) KR20210040161A (https=)
CN (1) CN112585716B (https=)
TW (1) TWI856971B (https=)
WO (1) WO2020046990A1 (https=)

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US12609283B2 (en) 2020-06-15 2026-04-21 Lam Research Corporation Control of pulsing frequencies and duty cycles of parameters of RF signals
KR20260048616A (ko) * 2020-07-15 2026-04-10 램 리써치 코포레이션 플라즈마 챔버의 rf 코일들의 역 동기화된 펄싱
JP7536540B2 (ja) * 2020-07-16 2024-08-20 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
TWI906346B (zh) * 2020-08-31 2025-12-01 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理方法
JP7575353B2 (ja) * 2020-08-31 2024-10-29 東京エレクトロン株式会社 プラズマ処理装置
CN114188204B (zh) * 2020-09-14 2023-10-31 中微半导体设备(上海)股份有限公司 一种等离子体处理方法、射频发生器以及装置
CN116779407A (zh) * 2020-10-13 2023-09-19 北京北方华创微电子装备有限公司 获取方法、阻抗匹配器及其方法和半导体工艺设备
KR20230114184A (ko) 2020-12-08 2023-08-01 램 리써치 코포레이션 저 주파수 RF 생성기 및 연관된 정전 척 (electrostatic chuck)
TW202243549A (zh) * 2021-04-22 2022-11-01 大陸商北京屹唐半導體科技股份有限公司 用於感應耦合電漿（ｉｃｐ）負載的雙頻匹配電路
US12451329B2 (en) 2021-06-02 2025-10-21 Tokyo Electron Limited Plasma processing apparatus with tunable electrical characteristic
EP4105963A1 (en) * 2021-06-17 2022-12-21 Impedans Ltd A controller for a matching unit of a plasma processing system
US11476090B1 (en) * 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US11694876B2 (en) * 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
KR102766926B1 (ko) * 2021-12-23 2025-02-14 세메스 주식회사 기판 처리 장치, 기판 처리 방법 및 플라즈마 발생 방법
KR20240140975A (ko) * 2022-02-04 2024-09-24 램 리써치 코포레이션 Hf rf 생성기와 연관된 반사 전력을 효율적으로 감소시키기 위한 시스템 및 방법
US12046449B2 (en) * 2022-04-22 2024-07-23 Applied Materials, Inc. Methods and apparatus for processing a substrate
US20230361242A1 (en) * 2022-05-04 2023-11-09 Applied Materials, Inc. Dry treatment for surface loss removal in micro-led structures
JP7577093B2 (ja) * 2022-06-29 2024-11-01 東京エレクトロン株式会社 プラズマ処理システムおよびプラズマ処理方法
CN115015618B (zh) * 2022-08-08 2022-10-14 深圳市恒运昌真空技术有限公司 一种射频电源信号采集方法及装置
CN115015796B (zh) * 2022-08-08 2022-10-14 深圳市恒运昌真空技术有限公司 一种射频电源信号采集方法及装置
CN118588525A (zh) * 2023-03-03 2024-09-03 北京北方华创微电子装备有限公司 阻抗匹配方法、等离子体设备、电子设备及存储介质
CN119170473B (zh) * 2023-06-19 2025-10-10 北京北方华创微电子装备有限公司 半导体工艺设备及其脉冲调节等离子体方法
US20250191884A1 (en) * 2023-12-11 2025-06-12 Applied Materials, Inc. Pulsed voltage waveform biasing of plasma

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US10424467B2 (en) 2017-03-13 2019-09-24 Applied Materials, Inc. Smart RF pulsing tuning using variable frequency generators

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Publication number Publication date
TWI856971B (zh) 2024-10-01
CN112585716B (zh) 2024-04-09
JP2021535542A (ja) 2021-12-16
JP2024112933A (ja) 2024-08-21
US10854427B2 (en) 2020-12-01
TW202017436A (zh) 2020-05-01
US20200075290A1 (en) 2020-03-05
CN112585716A (zh) 2021-03-30
WO2020046990A1 (en) 2020-03-05

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