TWI856971B - 具有乘數模式的射頻(rf)脈衝阻抗調諧 - Google Patents

具有乘數模式的射頻(rf)脈衝阻抗調諧 Download PDF

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Publication number
TWI856971B
TWI856971B TW108131260A TW108131260A TWI856971B TW I856971 B TWI856971 B TW I856971B TW 108131260 A TW108131260 A TW 108131260A TW 108131260 A TW108131260 A TW 108131260A TW I856971 B TWI856971 B TW I856971B
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TW
Taiwan
Prior art keywords
generators
power
generator
frequency
command set
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TW108131260A
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English (en)
Chinese (zh)
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TW202017436A (zh
Inventor
川崎勝正
賈斯汀 費
卡提克 拉馬斯瓦米
瑟吉歐富庫達 修吉
清水大亮
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美商應用材料股份有限公司
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Publication of TW202017436A publication Critical patent/TW202017436A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Drying Of Semiconductors (AREA)
TW108131260A 2018-08-30 2019-08-30 具有乘數模式的射頻(rf)脈衝阻抗調諧 TWI856971B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/117,457 2018-08-30
US16/117,457 US10854427B2 (en) 2018-08-30 2018-08-30 Radio frequency (RF) pulsing impedance tuning with multiplier mode

Publications (2)

Publication Number Publication Date
TW202017436A TW202017436A (zh) 2020-05-01
TWI856971B true TWI856971B (zh) 2024-10-01

Family

ID=69639075

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108131260A TWI856971B (zh) 2018-08-30 2019-08-30 具有乘數模式的射頻(rf)脈衝阻抗調諧

Country Status (6)

Country Link
US (1) US10854427B2 (https=)
JP (2) JP2021535542A (https=)
KR (1) KR20210040161A (https=)
CN (1) CN112585716B (https=)
TW (1) TWI856971B (https=)
WO (1) WO2020046990A1 (https=)

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JP7575353B2 (ja) * 2020-08-31 2024-10-29 東京エレクトロン株式会社 プラズマ処理装置
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KR20230114184A (ko) 2020-12-08 2023-08-01 램 리써치 코포레이션 저 주파수 RF 생성기 및 연관된 정전 척 (electrostatic chuck)
TW202243549A (zh) * 2021-04-22 2022-11-01 大陸商北京屹唐半導體科技股份有限公司 用於感應耦合電漿（ｉｃｐ）負載的雙頻匹配電路
US12451329B2 (en) 2021-06-02 2025-10-21 Tokyo Electron Limited Plasma processing apparatus with tunable electrical characteristic
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US11476090B1 (en) * 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US11694876B2 (en) * 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
KR102766926B1 (ko) * 2021-12-23 2025-02-14 세메스 주식회사 기판 처리 장치, 기판 처리 방법 및 플라즈마 발생 방법
KR20240140975A (ko) * 2022-02-04 2024-09-24 램 리써치 코포레이션 Hf rf 생성기와 연관된 반사 전력을 효율적으로 감소시키기 위한 시스템 및 방법
US12046449B2 (en) * 2022-04-22 2024-07-23 Applied Materials, Inc. Methods and apparatus for processing a substrate
US20230361242A1 (en) * 2022-05-04 2023-11-09 Applied Materials, Inc. Dry treatment for surface loss removal in micro-led structures
JP7577093B2 (ja) * 2022-06-29 2024-11-01 東京エレクトロン株式会社 プラズマ処理システムおよびプラズマ処理方法
CN115015618B (zh) * 2022-08-08 2022-10-14 深圳市恒运昌真空技术有限公司 一种射频电源信号采集方法及装置
CN115015796B (zh) * 2022-08-08 2022-10-14 深圳市恒运昌真空技术有限公司 一种射频电源信号采集方法及装置
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Also Published As

Publication number Publication date
CN112585716B (zh) 2024-04-09
JP2021535542A (ja) 2021-12-16
JP2024112933A (ja) 2024-08-21
US10854427B2 (en) 2020-12-01
KR20210040161A (ko) 2021-04-12
TW202017436A (zh) 2020-05-01
US20200075290A1 (en) 2020-03-05
CN112585716A (zh) 2021-03-30
WO2020046990A1 (en) 2020-03-05

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