JP2021534584A - EUVリソグラフィのためのSnO2表面の修飾 - Google Patents
EUVリソグラフィのためのSnO2表面の修飾 Download PDFInfo
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- JP2021534584A JP2021534584A JP2021507642A JP2021507642A JP2021534584A JP 2021534584 A JP2021534584 A JP 2021534584A JP 2021507642 A JP2021507642 A JP 2021507642A JP 2021507642 A JP2021507642 A JP 2021507642A JP 2021534584 A JP2021534584 A JP 2021534584A
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- 238000001900 extreme ultraviolet lithography Methods 0.000 title claims abstract description 38
- 230000004048 modification Effects 0.000 title claims abstract description 37
- 238000012986 modification Methods 0.000 title claims abstract description 37
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 title abstract description 20
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 314
- 230000005661 hydrophobic surface Effects 0.000 claims abstract description 151
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- 229910006404 SnO 2 Inorganic materials 0.000 claims description 391
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- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims description 52
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- -1 aminosilane compound Chemical class 0.000 claims description 16
- 125000003545 alkoxy group Chemical group 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 12
- KAHVZNKZQFSBFW-UHFFFAOYSA-N n-methyl-n-trimethylsilylmethanamine Chemical compound CN(C)[Si](C)(C)C KAHVZNKZQFSBFW-UHFFFAOYSA-N 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
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- 125000003277 amino group Chemical group 0.000 claims description 8
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- 239000002253 acid Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 14
- 238000006862 quantum yield reaction Methods 0.000 description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 12
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- 230000006870 function Effects 0.000 description 12
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- 229910052751 metal Inorganic materials 0.000 description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 10
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 8
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- 229910000077 silane Inorganic materials 0.000 description 4
- LYRCQNDYYRPFMF-UHFFFAOYSA-N trimethyltin Chemical group C[Sn](C)C LYRCQNDYYRPFMF-UHFFFAOYSA-N 0.000 description 4
- HBAQYPYDRFILMT-UHFFFAOYSA-N 8-[3-(1-cyclopropylpyrazol-4-yl)-1H-pyrazolo[4,3-d]pyrimidin-5-yl]-3-methyl-3,8-diazabicyclo[3.2.1]octan-2-one Chemical class C1(CC1)N1N=CC(=C1)C1=NNC2=C1N=C(N=C2)N1C2C(N(CC1CC2)C)=O HBAQYPYDRFILMT-UHFFFAOYSA-N 0.000 description 2
- DCERHCFNWRGHLK-UHFFFAOYSA-N C[Si](C)C Chemical compound C[Si](C)C DCERHCFNWRGHLK-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 150000002433 hydrophilic molecules Chemical class 0.000 description 2
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- 230000001960 triggered effect Effects 0.000 description 2
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
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- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Luminescent Compositions (AREA)
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- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
本発明は、たとえば、以下のような態様で実現することもできる。
適用例1:
方法であって、
疎水性表面処理化合物を処理チャンバに導入することであって、前記処理チャンバは、SnO 2 層を備えた処理用基板を含み、前記疎水性表面処理化合物は、SnO 2 層の表面に、前記表面の疎水性を高める修飾を形成することと、
スピンコーティングによって前記SnO 2 層の前記表面上にフォトレジスト層を堆積することであって、前記SnO 2 層の前記表面の前記修飾は、スピンコーティング中の前記フォトレジストと前記SnO 2 層との接触の接着性を強化することと
を含む、方法。
適用例2:
適用例1の方法であって、
前記修飾は、前記フォトレジストと前記SnO 2 層との前記接触を前記スピンコーティング後に直接かつ連続的なものとすることを可能にする、方法。
適用例3:
適用例1の方法であって、
前記修飾は、フォトレジストが前記修飾なしで前記SnO 2 層に塗布されるときよりも、前記スピンコーティング後の前記フォトレジストの厚さをより均一にすることを可能にする、方法。
適用例4:
適用例1の方法であって、
前記修飾は、前記SnO 2 層の前記表面上に前記疎水性表面処理化合物のコーティングを形成し、前記フォトレジストと前記コーティングの間の介在層なしに前記フォトレジストを前記SnO 2 層上に直接堆積することを可能にする、方法。
適用例5:
適用例1の方法であって、
前記フォトレジストと前記SnO 2 層との前記接触の前記強化された接着性は、フォトレジストが前記修飾なしで前記SnO 2 層の前記表面に塗布されるときに生じる親水性−疎水性分子間力よりも熱力学的に有利な疎水性−疎水性分子間力によって媒介される、方法。
適用例6:
適用例1の方法であって、
前記フォトレジストがリソグラフィ中に極端紫外線(EUV)光に曝露されるとき、前記フォトレジストと前記SnO 2 層との接触の前記強化された接着性は、前記フォトレジストと前記SnO 2 層との間に介在層がある場合よりも、前記SnO 2 層からの二次電子収集を高速にすることを可能にする、方法。
適用例7:
適用例1の方法であって、
前記フォトレジストがリソグラフィ中に前記フォトレジストへのパターン転写のためにEUV光に曝露されるとき、前記フォトレジストと前記SnO 2 層との接触の前記強化された接着性は、フォトレジストが前記修飾なしで前記SnO 2 層に塗布される場合よりも、前記パターン転写の解像度を高くすることを可能にする、方法。
適用例8:
適用例1の方法であって、
前記疎水性表面処理化合物は、前記SnO 2 層のSn原子と反応し、前記疎水性表面処理化合物の単層を形成する、方法。
適用例9:
適用例1の方法であって、
前記疎水性表面処理化合物は、アルコキシル基およびアミノ基を含み、前記アルコキシル基は、前記修飾のために前記SnO 2 層の前記表面のSn原子と反応し、前記アミノ基は、前記表面の前記疎水性を高めるために前記フォトレジストとの疎水性−疎水性相互作用に関与する、方法。
適用例10:
適用例1の方法であって、
前記疎水性表面処理化合物は、アミノシラン化合物またはアミノスズ化合物である、方法。
適用例11:
適用例1の方法であって、
前記疎水性表面処理化合物は、(CH 3 ) 2 Si[N(CH 3 ) 2 ] 2 、(CH 3 ) 3 SiN(CH 3 ) 2 、(CH 3 ) 2 Sn[N(CH 3 ) 2 ] 2 、(CH 3 ) 3 SiN(CH 3 ) 2 、HN[Si(CH 3 ) 3 ] 2 、またはHN[Sn(CH 3 ) 3 ] 2 の1つである、方法。
適用例12:
適用例1の方法であって、
前記疎水性表面処理化合物を前記処理チャンバに導入することは、前記修飾に十分な疎水性表面処理化合物を提供する5標準立方センチメートル/分(SCCM)〜100SCCMの流量によって特徴付けられる、方法。
適用例13:
適用例1の方法であって、
前記SnO 2 層の前記表面が、前記処理チャンバ内の前記疎水性表面処理化合物に10秒〜180秒間曝露され、前記疎水性表面処理化合物を前記表面と反応させる、方法。
適用例14:
適用例1の方法であって、
前記SnO 2 層の前記表面の前記修飾は、前記表面の水接触角(WCA)を少なくとも10°増加させる、方法。
適用例15:
方法であって、
基板上にSnO x 層を堆積することであって、前記SnO x 層の表面は、親水性であることと、
前記SnO x 層の前記表面を疎水性表面処理化合物と反応させ、前記表面の親水性を低下させることと、
前記SnO x 層上にフォトレジストをスピンコーティングすることであって、前記疎水性表面処理化合物と反応して親水性が低下した前記SnO x 層の前記表面は、前記フォトレジストと前記SnO x 層が直接接触するように、前記フォトレジストへの前記SnO x 層の接着性を向上させることと
を含む、方法。
適用例16:
適用例15の方法であって、
EUVリソグラフィを使用して前記SnO x 層上にパターンを転写することをさらに含み、前記フォトレジストと前記SnO x 層との前記直接接触によって、前記パターン内のフィーチャのラインエッジラフネスを低減する、方法。
適用例17:
適用例15の方法であって、
前記SnO x の前記表面を前記疎水性表面処理化合物と前記反応させることによって、前記SnO x 層から前記フォトレジストを分離する前記疎水性表面処理化合物の単層のみが存在するように自己組織化単層(SAM)が形成される、方法。
適用例18:
適用例15の方法であって、
前記疎水性表面処理化合物は、反応性基および疎水性基を含み、前記反応性基は、前記SnO x 層と結合し、前記疎水性基は、前記フォトレジストと相互作用し、前記フォトレジストへの前記SnO x 層の前記接着性の向上を引き起こす、方法。
適用例19:
適用例15の方法であって、
xは、1〜8である、方法。
適用例20:
適用例15の方法であって、
前記疎水性表面処理化合物は、(CH 3 ) 2 Si[N(CH 3 ) 2 ] 2 、(CH 3 ) 3 SiN(CH 3 ) 2 、(CH 3 ) 2 Sn[N(CH 3 ) 2 ] 2 、(CH 3 ) 3 SnN(CH 3 ) 2 、HN[Si(CH 3 ) 3 ] 2 、またはHN[Sn(CH 3 ) 3 ] 2 の1つである、方法。
適用例21:
基板であって、
化学的に修飾された表面を有するSnO x 層であって、前記化学的に修飾された表面は、疎水性表面処理化合物の単層を含むSnO x 層と、
前記SnO x 層の前記化学的に修飾された表面に接触するフォトレジスト層と
を備える、基板。
適用例22:
適用例21の基板であって、
前記疎水性表面処理化合物は、アミノシランまたはアミノスズ化合物であり、前記化学的に修飾された表面は、前記SnO 2 層を前記アミノシランまたは前記アミノスズ化合物に曝露して前記SnO 2 層と反応させることによって得られる、基板。
適用例23:
適用例21の基板であって、
前記疎水性表面処理化合物は、(CH 3 ) 2 Si[N(CH 3 ) 2 ] 2 、(CH 3 ) 3 SiN(CH 3 ) 2 、(CH 3 ) 2 Sn[N(CH 3 ) 2 ] 2 、(CH 3 ) 3 SnN(CH 3 ) 2 、HN[Si(CH 3 ) 3 ] 2 、またはHN[Sn(CH 3 ) 3 ] 2 の1つである、基板。
Claims (23)
- 方法であって、
疎水性表面処理化合物を処理チャンバに導入することであって、前記処理チャンバは、SnO2層を備えた処理用基板を含み、前記疎水性表面処理化合物は、SnO2層の表面に、前記表面の疎水性を高める修飾を形成することと、
スピンコーティングによって前記SnO2層の前記表面上にフォトレジスト層を堆積することであって、前記SnO2層の前記表面の前記修飾は、スピンコーティング中の前記フォトレジストと前記SnO2層との接触の接着性を強化することと
を含む、方法。 - 請求項1に記載の方法であって、
前記修飾は、前記フォトレジストと前記SnO2層との前記接触を前記スピンコーティング後に直接かつ連続的なものとすることを可能にする、方法。 - 請求項1に記載の方法であって、
前記修飾は、フォトレジストが前記修飾なしで前記SnO2層に塗布されるときよりも、前記スピンコーティング後の前記フォトレジストの厚さをより均一にすることを可能にする、方法。 - 請求項1に記載の方法であって、
前記修飾は、前記SnO2層の前記表面上に前記疎水性表面処理化合物のコーティングを形成し、前記フォトレジストと前記コーティングの間の介在層なしに前記フォトレジストを前記SnO2層上に直接堆積することを可能にする、方法。 - 請求項1に記載の方法であって、
前記フォトレジストと前記SnO2層との前記接触の前記強化された接着性は、フォトレジストが前記修飾なしで前記SnO2層の前記表面に塗布されるときに生じる親水性−疎水性分子間力よりも熱力学的に有利な疎水性−疎水性分子間力によって媒介される、方法。 - 請求項1に記載の方法であって、
前記フォトレジストがリソグラフィ中に極端紫外線(EUV)光に曝露されるとき、前記フォトレジストと前記SnO2層との接触の前記強化された接着性は、前記フォトレジストと前記SnO2層との間に介在層がある場合よりも、前記SnO2層からの二次電子収集を高速にすることを可能にする、方法。 - 請求項1に記載の方法であって、
前記フォトレジストがリソグラフィ中に前記フォトレジストへのパターン転写のためにEUV光に曝露されるとき、前記フォトレジストと前記SnO2層との接触の前記強化された接着性は、フォトレジストが前記修飾なしで前記SnO2層に塗布される場合よりも、前記パターン転写の解像度を高くすることを可能にする、方法。 - 請求項1に記載の方法であって、
前記疎水性表面処理化合物は、前記SnO2層のSn原子と反応し、前記疎水性表面処理化合物の単層を形成する、方法。 - 請求項1に記載の方法であって、
前記疎水性表面処理化合物は、アルコキシル基およびアミノ基を含み、前記アルコキシル基は、前記修飾のために前記SnO2層の前記表面のSn原子と反応し、前記アミノ基は、前記表面の前記疎水性を高めるために前記フォトレジストとの疎水性−疎水性相互作用に関与する、方法。 - 請求項1に記載の方法であって、
前記疎水性表面処理化合物は、アミノシラン化合物またはアミノスズ化合物である、方法。 - 請求項1に記載の方法であって、
前記疎水性表面処理化合物は、(CH3)2Si[N(CH3)2]2、(CH3)3SiN(CH3)2、(CH3)2Sn[N(CH3)2]2、(CH3)3SiN(CH3)2、HN[Si(CH3)3]2、またはHN[Sn(CH3)3]2の1つである、方法。 - 請求項1に記載の方法であって、
前記疎水性表面処理化合物を前記処理チャンバに導入することは、前記修飾に十分な疎水性表面処理化合物を提供する5標準立方センチメートル/分(SCCM)〜100SCCMの流量によって特徴付けられる、方法。 - 請求項1に記載の方法であって、
前記SnO2層の前記表面が、前記処理チャンバ内の前記疎水性表面処理化合物に10秒〜180秒間曝露され、前記疎水性表面処理化合物を前記表面と反応させる、方法。 - 請求項1に記載の方法であって、
前記SnO2層の前記表面の前記修飾は、前記表面の水接触角(WCA)を少なくとも10°増加させる、方法。 - 方法であって、
基板上にSnOx層を堆積することであって、前記SnOx層の表面は、親水性であることと、
前記SnOx層の前記表面を疎水性表面処理化合物と反応させ、前記表面の親水性を低下させることと、
前記SnOx層上にフォトレジストをスピンコーティングすることであって、前記疎水性表面処理化合物と反応して親水性が低下した前記SnOx層の前記表面は、前記フォトレジストと前記SnOx層が直接接触するように、前記フォトレジストへの前記SnOx層の接着性を向上させることと
を含む、方法。 - 請求項15に記載の方法であって、
EUVリソグラフィを使用して前記SnOx層上にパターンを転写することをさらに含み、前記フォトレジストと前記SnOx層との前記直接接触によって、前記パターン内のフィーチャのラインエッジラフネスを低減する、方法。 - 請求項15に記載の方法であって、
前記SnOxの前記表面を前記疎水性表面処理化合物と前記反応させることによって、前記SnOx層から前記フォトレジストを分離する前記疎水性表面処理化合物の単層のみが存在するように自己組織化単層(SAM)が形成される、方法。 - 請求項15に記載の方法であって、
前記疎水性表面処理化合物は、反応性基および疎水性基を含み、前記反応性基は、前記SnOx層と結合し、前記疎水性基は、前記フォトレジストと相互作用し、前記フォトレジストへの前記SnOx層の前記接着性の向上を引き起こす、方法。 - 請求項15に記載の方法であって、
xは、1〜8である、方法。 - 請求項15に記載の方法であって、
前記疎水性表面処理化合物は、(CH3)2Si[N(CH3)2]2、(CH3)3SiN(CH3)2、(CH3)2Sn[N(CH3)2]2、(CH3)3SnN(CH3)2、HN[Si(CH3)3]2、またはHN[Sn(CH3)3]2の1つである、方法。 - 基板であって、
化学的に修飾された表面を有するSnOx層であって、前記化学的に修飾された表面は、疎水性表面処理化合物の単層を含むSnOx層と、
前記SnOx層の前記化学的に修飾された表面に接触するフォトレジスト層と
を備える、基板。 - 請求項21に記載の基板であって、
前記疎水性表面処理化合物は、アミノシランまたはアミノスズ化合物であり、前記化学的に修飾された表面は、前記SnO2層を前記アミノシランまたは前記アミノスズ化合物に曝露して前記SnO2層と反応させることによって得られる、基板。 - 請求項21に記載の基板であって、
前記疎水性表面処理化合物は、(CH3)2Si[N(CH3)2]2、(CH3)3SiN(CH3)2、(CH3)2Sn[N(CH3)2]2、(CH3)3SnN(CH3)2、HN[Si(CH3)3]2、またはHN[Sn(CH3)3]2の1つである、基板。
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CN112640044A (zh) | 2021-04-09 |
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US20200058492A1 (en) | 2020-02-20 |
TWI814881B (zh) | 2023-09-11 |
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US11031244B2 (en) | 2021-06-08 |
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