JP2021534558A - バッテリ用セパレータへの極薄セラミックコーティング - Google Patents
バッテリ用セパレータへの極薄セラミックコーティング Download PDFInfo
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- JP2021534558A JP2021534558A JP2021509775A JP2021509775A JP2021534558A JP 2021534558 A JP2021534558 A JP 2021534558A JP 2021509775 A JP2021509775 A JP 2021509775A JP 2021509775 A JP2021509775 A JP 2021509775A JP 2021534558 A JP2021534558 A JP 2021534558A
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- 238000005524 ceramic coating Methods 0.000 title description 20
- 239000000919 ceramic Substances 0.000 claims abstract description 162
- 238000000034 method Methods 0.000 claims abstract description 99
- 229920000307 polymer substrate Polymers 0.000 claims abstract description 58
- 150000002500 ions Chemical class 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims description 86
- 239000007789 gas Substances 0.000 claims description 42
- 238000001704 evaporation Methods 0.000 claims description 30
- 230000008020 evaporation Effects 0.000 claims description 29
- 229920001940 conductive polymer Polymers 0.000 claims description 26
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 239000002322 conducting polymer Substances 0.000 claims description 18
- 238000001816 cooling Methods 0.000 claims description 18
- 239000001301 oxygen Substances 0.000 claims description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 16
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 13
- 229910052744 lithium Inorganic materials 0.000 claims description 12
- -1 polyethylene Polymers 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 239000011135 tin Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000011777 magnesium Substances 0.000 claims description 9
- 239000012528 membrane Substances 0.000 claims description 9
- 229920000098 polyolefin Polymers 0.000 claims description 9
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 8
- 239000003792 electrolyte Substances 0.000 claims description 8
- 239000010439 graphite Substances 0.000 claims description 8
- 229910002804 graphite Inorganic materials 0.000 claims description 8
- 239000000395 magnesium oxide Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 7
- 229910010093 LiAlO Inorganic materials 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000002223 garnet Substances 0.000 claims description 6
- 239000005373 porous glass Substances 0.000 claims description 6
- 239000004698 Polyethylene Substances 0.000 claims description 5
- 239000011230 binding agent Substances 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 239000011572 manganese Substances 0.000 claims description 5
- 229920000573 polyethylene Polymers 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 229910000733 Li alloy Inorganic materials 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- 239000004743 Polypropylene Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 239000001989 lithium alloy Substances 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 229920001155 polypropylene Polymers 0.000 claims description 4
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 2
- VKJLWXGJGDEGSO-UHFFFAOYSA-N barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[Ti+4].[Ba+2] VKJLWXGJGDEGSO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 238000005566 electron beam evaporation Methods 0.000 claims description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 claims description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 2
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 239000007769 metal material Substances 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000003990 capacitor Substances 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 description 27
- 229920000642 polymer Polymers 0.000 description 24
- 210000004027 cell Anatomy 0.000 description 12
- 229910010293 ceramic material Inorganic materials 0.000 description 12
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000011148 porous material Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 8
- 238000004146 energy storage Methods 0.000 description 7
- 229910001416 lithium ion Inorganic materials 0.000 description 7
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- 229910017107 AlOx Inorganic materials 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 4
- 239000011575 calcium Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052755 nonmetal Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910017105 AlOxNy Inorganic materials 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- 241001673391 Entandrophragma candollei Species 0.000 description 2
- 229910012851 LiCoO 2 Inorganic materials 0.000 description 2
- 229910015643 LiMn 2 O 4 Inorganic materials 0.000 description 2
- 229910020346 SiS 2 Inorganic materials 0.000 description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910001593 boehmite Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
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- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
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- 238000005137 deposition process Methods 0.000 description 2
- 229910001648 diaspore Inorganic materials 0.000 description 2
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 2
- 230000002687 intercalation Effects 0.000 description 2
- 238000009830 intercalation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
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- 229910003002 lithium salt Inorganic materials 0.000 description 2
- 159000000002 lithium salts Chemical class 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
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- 239000004408 titanium dioxide Substances 0.000 description 2
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229920008712 Copo Polymers 0.000 description 1
- 229910004424 Li(Ni0.8Co0.15Al0.05)O2 Inorganic materials 0.000 description 1
- 229910010678 Li5Cr(PO4)2F2 Inorganic materials 0.000 description 1
- 229910015015 LiAsF 6 Inorganic materials 0.000 description 1
- 229910013075 LiBF Inorganic materials 0.000 description 1
- 229910013380 LiBS Inorganic materials 0.000 description 1
- 229910013684 LiClO 4 Inorganic materials 0.000 description 1
- 229910011281 LiCoPO 4 Inorganic materials 0.000 description 1
- 229910010707 LiFePO 4 Inorganic materials 0.000 description 1
- 229910013249 LiMP Inorganic materials 0.000 description 1
- 229910014689 LiMnO Inorganic materials 0.000 description 1
- 229910013716 LiNi Inorganic materials 0.000 description 1
- 229910013210 LiNiMnCoO Inorganic materials 0.000 description 1
- 229910013290 LiNiO 2 Inorganic materials 0.000 description 1
- 229910013086 LiNiPO Inorganic materials 0.000 description 1
- 229910013161 LiNixCo Inorganic materials 0.000 description 1
- 229910013870 LiPF 6 Inorganic materials 0.000 description 1
- 229910020531 Na5V2(PO4)2F3 Inorganic materials 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
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- 229910052799 carbon Inorganic materials 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 239000011245 gel electrolyte Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910000625 lithium cobalt oxide Inorganic materials 0.000 description 1
- 150000002642 lithium compounds Chemical class 0.000 description 1
- BFZPBUKRYWOWDV-UHFFFAOYSA-N lithium;oxido(oxo)cobalt Chemical compound [Li+].[O-][Co]=O BFZPBUKRYWOWDV-UHFFFAOYSA-N 0.000 description 1
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- 239000000203 mixture Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
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- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000010450 olivine Substances 0.000 description 1
- 229910052609 olivine Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/52—Separators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
- H01M50/40—Separators; Membranes; Diaphragms; Spacing elements inside cells
- H01M50/403—Manufacturing processes of separators, membranes or diaphragms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
- H01M50/40—Separators; Membranes; Diaphragms; Spacing elements inside cells
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- H01M50/409—Separators, membranes or diaphragms characterised by the material
- H01M50/449—Separators, membranes or diaphragms characterised by the material having a layered structure
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Abstract
Description
本開示の実装態様は概して、セパレータ、前記セパレータを含むバッテリ及びコンデンサといった高性能電気化学デバイス、システム、並びにそれらの製造方法を含む。
コンデンサ及びリチウムイオン(Liイオン)バッテリなどの急速充電、高容量エネルギー貯蔵デバイスは、携帯用電子機器、医療、輸送、グリッド接続された大エネルギー貯蔵、再生可能エネルギー貯蔵、及び無停電電源(UPS)を含む、増々多くの用途に使用されている。
Claims (32)
- 第1の表面と、第1の表面の反対側の第2の表面とを有する、イオンを伝導することのできるポリマー基板;
第1の表面上に形成された、イオンを伝導することのできる第1のセラミック含有層であって、約1,000ナノメートルから約5,000ナノメートルの範囲の厚さを有する第1のセラミック含有層;及び
第2の表面上に形成された、イオンを伝導することのできる第2のセラミック含有層であって、結合剤を含まないセラミック含有層であり、且つ約1ナノメートルから約1,000ナノメートルの範囲の厚さを有する第2のセラミック含有層
を備えるセパレータ。 - ポリマー基板が微多孔性イオン伝導性ポリマー層である、請求項1に記載のセパレータ。
- 第1のセラミック含有層及び第2のセラミック含有層は各々が、独立して:多孔性酸化アルミニウム、多孔性ZrO2、多孔性HfO2、多孔性SiO2、多孔性MgO、多孔性TiO2、多孔性Ta2O5、多孔性Nb2O5、多孔性LiAlO2、多孔性BaTiO3、イオン伝導性ガーネット、抗イオン伝導性ペロブスカイト、多孔性ガラス誘電体、又はこれらの組み合わせの群から選択される材料を含む、請求項1に記載のセパレータ。
- 第1のセラミック含有層が結合剤を含む、請求項1に記載のセパレータ。
- 第2のセラミック含有層が、約50ナノメートルから約500ナノメートルの範囲の厚さを有する、請求項1に記載のセパレータ。
- 第1のセラミック含有層が、約1,000ナノメートルから2,000ナノメートルの範囲の厚さを有する、請求項5に記載のセパレータ。
- ポリマー基板が、約3ミクロンから約25ミクロンの範囲の厚さを有する、請求項6に記載のセパレータ。
- ポリマー基板が、約3ミクロンから約12ミクロンの範囲の厚さを有する、請求項7に記載のセパレータ。
- ポリマー基板がポリオレフィン膜である、請求項1に記載のセパレータ。
- ポリオレフィン膜が、ポリエチレン膜又はポリプロピレン膜である、請求項9に記載のセパレータ。
- 第2のセラミック含有層が多孔性酸化アルミニウムを含む、請求項1に記載のセパレータ。
- 第2のセラミック含有層が、酸化ジルコニウム、酸化ケイ素、又はそれらの組み合わせを更に含む、請求項11に記載のセパレータ。
- リチウム金属、リチウム合金、グラファイト、ケイ素含有グラファイト、ニッケル、銅、スズ、インジウム、ケイ素、又はこれらの組み合わせのうちの少なくとも1つを含有するアノード;
カソード;及び
アノードとカソードとの間に配置された請求項1から12のいずれか一項に記載のセパレータ
を備えるバッテリ。 - セパレータを介してアノード及びカソードとイオン連通する電解質
を更に含む、請求項13に記載のバッテリ。 - カソードに接触する正の電流コレクタ;及び
アノードに接触する負の電流コレクタ
を更に備え、正の電流コレクタ及び負の電流コレクタは各々が、独立して、アルミニウム(Al)、銅(Cu)、亜鉛(Zn)、ニッケル(Ni)、コバルト(Co)、スズ(Sn)、ケイ素(Si)、マンガン(Mn)、マグネシウム(Mg)、これらの合金、及びこれらの組み合わせから選択される材料を含む、請求項13に記載のバッテリ。 - バッテリ用のセパレータを形成する方法であって:
処理領域に配置された微多孔性イオン伝導性ポリマー層上に堆積される材料を蒸発プロセスに曝すことであって、微多孔性イオン伝導性ポリマー層が:
第1の表面;
第1の表面の反対側の第2の表面;及び
第1の表面上に形成された、イオンを伝導することのできる第1のセラミック含有層であって、約1,000ナノメートルから約5,000ナノメートルの範囲の厚さを有する第1のセラミック含有層
を含む、曝すことと;
蒸発された材料を反応性ガス及び/又はプラズマと反応させて、イオンを伝導することのできる第2のセラミック含有層を、微多孔性イオン伝導ポリマー層の第2の表面上に堆積させることであって、第2のセラミック含有層は、結合剤を含まないセラミック含有層であり、且つ約1ナノメートルから約1,000ナノメートルの範囲の厚さを有する、反応させることと
を含む方法。 - 第1のセラミック含有層及び第2のセラミック含有層は各々が、独立して:多孔性酸化アルミニウム、多孔性ZrO2、多孔性HfO2、多孔性SiO2、多孔性MgO、多孔性TiO2、多孔性Ta2O5、多孔性Nb2O5、多孔性LiAlO2、多孔性BaTiO3、イオン伝導性ガーネット、抗イオン伝導性ペロブスカイト、多孔性ガラス誘電体、又はこれらの組み合わせの群から選択される材料を含む、請求項16に記載の方法。
- 第1のセラミック含有層が結合剤を含む、請求項16に記載の方法。
- 堆積される材料が:アルミニウム(Al)、銀(Ag)、クロム(Cr)、銅(Cu)、インジウム(In)、鉄(Fe)、マグネシウム(Mg)、ニッケル(Ni)、ケイ素(Si)、スズ(Sn)、イッテルビウム(Yb)、ジルコニウム(Zr)、又はこれらの組み合わせの群から選択される金属材料である、請求項16に記載の方法。
- 堆積される材料が:酸化ジルコニウム、酸化ハフニウム、酸化ケイ素、酸化マグネシウム、酸化チタン、酸化タンタル、酸化ニオブ、酸化リチウムアルミニウム、酸化バリウムチタン、又はこれらの組み合わせの群から選択される金属酸化物である、請求項16に記載の方法。
- 反応性ガスが:酸素(O2)、オゾン(O3)、酸素ラジカル(O*)、又はこれらの組み合わせの群から選択される酸素含有ガスである、請求項16に記載の方法。
- プラズマが酸素含有プラズマである、請求項16に記載の方法。
- 第2のセラミック含有層が酸化アルミニウムである、請求項16に記載の方法。
- 蒸発プロセスが、熱蒸発プロセス又は電子ビーム蒸発プロセスである、請求項16に記載の方法。
- 堆積される蒸発材料を蒸発プロセスに曝すことに先立ち、微多孔性イオン伝導性ポリマー層を冷却プロセスに曝すこと
を更に含む、請求項16に記載の方法。 - 冷却プロセスが、微多孔性イオン伝導性ポリマー層を−20℃から22℃の間の温度に冷却する、請求項25に記載の方法。
- 冷却プロセスが、微多孔性イオン伝導性ポリマー層を−10℃から0℃の間の温度に冷却する、請求項26に記載の方法。
- 蒸発プロセスが、堆積される材料を1,300℃から1,600℃の間の温度に曝すことを含む、請求項16に記載の方法。
- 微多孔性イオン伝導性ポリマーが、ポリエチレン又はポリプロピレンを含む、請求項16に記載の方法。
- バッテリ用のセパレータを形成する方法であって:
処理領域に配置された微多孔性イオン伝導性ポリマー層上に堆積される第1の材料を蒸発プロセスに曝すことであって、微多孔性イオン伝導性ポリマー層が:
第1の表面;
第1の表面の反対側の第2の表面;及び
第1の表面上に形成された、イオンを伝導することのできる第1のセラミック含有層であって、約1,000ナノメートルから約5,000ナノメートルの範囲の厚さを有する第1のセラミック含有層
を有する、第1の材料を蒸発プロセスに曝すことと;
蒸発された第1の材料を反応性ガス及び/又はプラズマと反応させて、イオンを伝導することのできる第2のセラミック含有層を、微多孔性イオン伝導性ポリマー層の第2の表面上に堆積させることであって、第2のセラミック含有層が、結合剤を含まないセラミック含有層であり、且つ約1ナノメートルから約100ナノメートルの範囲の厚さを有する、第1の材料を反応させることと;
微多孔性イオン伝導性ポリマー層を第1の冷却プロセスに曝すことと;
蒸発された第2の材料を反応性ガス及び/又はプラズマと反応させて、イオンを伝導することのできる第3のセラミック含有層を第2のセラミック含有層上に堆積させることであって、第3のセラミック含有層が、結合剤を含まないセラミック含有層であり、且つ約1ナノメートルから約100ナノメートルの範囲の厚さを有する、第2の材料を反応させることと
を含む方法。 - 第3のセラミック含有層を堆積させた後で、微多孔性イオン伝導性ポリマー層を第2の冷却プロセスに曝すこと
を更に含む、請求項30に記載の方法。 - 蒸発された第3の材料を反応性ガス及び/又はプラズマと反応させて、イオンを伝導することのできる第4のセラミック含有層を、第3のセラミック含有層上に堆積させることであって、第4のセラミック含有層が、結合剤を含まないセラミック含有層であり、且つ約1ナノメートルから約100ナノメートルの範囲の厚さを有する、請求項31に記載の方法。
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US11588209B2 (en) | 2023-02-21 |
US20210328308A1 (en) | 2021-10-21 |
EP3841631A1 (en) | 2021-06-30 |
WO2020037494A1 (en) | 2020-02-27 |
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US20230170581A1 (en) | 2023-06-01 |
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