JP2021527340A5 - - Google Patents
Info
- Publication number
- JP2021527340A5 JP2021527340A5 JP2020570738A JP2020570738A JP2021527340A5 JP 2021527340 A5 JP2021527340 A5 JP 2021527340A5 JP 2020570738 A JP2020570738 A JP 2020570738A JP 2020570738 A JP2020570738 A JP 2020570738A JP 2021527340 A5 JP2021527340 A5 JP 2021527340A5
- Authority
- JP
- Japan
- Prior art keywords
- hard mask
- carbon hard
- approximately
- diamond
- electrostatic chuck
- Prior art date
Links
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862688721P | 2018-06-22 | 2018-06-22 | |
| US62/688,721 | 2018-06-22 | ||
| US16/430,136 US11158507B2 (en) | 2018-06-22 | 2019-06-03 | In-situ high power implant to relieve stress of a thin film |
| US16/430,136 | 2019-06-03 | ||
| PCT/US2019/035497 WO2019245735A1 (en) | 2018-06-22 | 2019-06-05 | In-situ high power implant to relieve stress of a thin film |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| JP2021527340A JP2021527340A (ja) | 2021-10-11 |
| JPWO2019245735A5 JPWO2019245735A5 (https=) | 2022-06-13 |
| JP2021527340A5 true JP2021527340A5 (https=) | 2022-06-13 |
| JP7366072B2 JP7366072B2 (ja) | 2023-10-20 |
Family
ID=68982131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020570738A Active JP7366072B2 (ja) | 2018-06-22 | 2019-06-05 | 薄膜の応力を軽減するためのインシトゥ高電力注入 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US11158507B2 (https=) |
| JP (1) | JP7366072B2 (https=) |
| KR (1) | KR102589210B1 (https=) |
| CN (1) | CN112219259B (https=) |
| SG (1) | SG11202009993YA (https=) |
| TW (1) | TWI818033B (https=) |
| WO (1) | WO2019245735A1 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI869392B (zh) * | 2019-04-15 | 2025-01-11 | 美商應用材料股份有限公司 | 處理基板的方法 |
| WO2021225790A1 (en) * | 2020-05-05 | 2021-11-11 | Lam Research Corporation | Inert gas implantation for hard mask selectivity improvement |
| US11527412B2 (en) * | 2020-08-09 | 2022-12-13 | Applied Materials, Inc. | Method for increasing photoresist etch selectivity to enable high energy hot implant in SiC devices |
| JP2022097936A (ja) * | 2020-12-21 | 2022-07-01 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
| JP7638727B2 (ja) * | 2021-02-22 | 2025-03-04 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
| JP2022187397A (ja) * | 2021-06-07 | 2022-12-19 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
| JP7788884B2 (ja) * | 2022-02-18 | 2025-12-19 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
| JP2024004377A (ja) * | 2022-06-28 | 2024-01-16 | 東京エレクトロン株式会社 | 炭素含有膜の形成方法 |
| WO2025212416A1 (en) * | 2024-04-05 | 2025-10-09 | Applied Materials, Inc. | Densification of carbon gapfill using low frequency radio frequency (lfrf) treatment |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08102532A (ja) | 1994-09-30 | 1996-04-16 | Nippondenso Co Ltd | イオン注入基板の製造方法 |
| MY132894A (en) | 1997-08-25 | 2007-10-31 | Ibm | Layered resist system using tunable amorphous carbon film as a bottom layer and methods of fabrication thereof |
| US20020144657A1 (en) * | 2001-04-05 | 2002-10-10 | Chiang Tony P. | ALD reactor employing electrostatic chuck |
| JP4515064B2 (ja) | 2003-09-11 | 2010-07-28 | 学校法人鶴学園 | 炭素系薄膜用成膜装置，成膜装置，及び成膜方法 |
| US7422775B2 (en) * | 2005-05-17 | 2008-09-09 | Applied Materials, Inc. | Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing |
| US8088295B2 (en) * | 2008-01-22 | 2012-01-03 | Hitachi Global Storage Technologies Netherlands B.V. | Diamond-like carbon (DLC) hardmask and methods of fabrication using same |
| US8133819B2 (en) | 2008-02-21 | 2012-03-13 | Applied Materials, Inc. | Plasma etching carbonaceous layers with sulfur-based etchants |
| US8361906B2 (en) | 2010-05-20 | 2013-01-29 | Applied Materials, Inc. | Ultra high selectivity ashable hard mask film |
| US8513129B2 (en) * | 2010-05-28 | 2013-08-20 | Applied Materials, Inc. | Planarizing etch hardmask to increase pattern density and aspect ratio |
| TW201216331A (en) * | 2010-10-05 | 2012-04-16 | Applied Materials Inc | Ultra high selectivity doped amorphous carbon strippable hardmask development and integration |
| KR20120121340A (ko) | 2011-04-26 | 2012-11-05 | 삼성전자주식회사 | 유도결합 플라즈마를 이용한 탄소계 하드 마스크막 제조 방법 및 이를 이용한 패턴 형성 방법 |
| US8679987B2 (en) | 2012-05-10 | 2014-03-25 | Applied Materials, Inc. | Deposition of an amorphous carbon layer with high film density and high etch selectivity |
| US9362133B2 (en) | 2012-12-14 | 2016-06-07 | Lam Research Corporation | Method for forming a mask by etching conformal film on patterned ashable hardmask |
| US20150371851A1 (en) | 2013-03-15 | 2015-12-24 | Applied Materials, Inc. | Amorphous carbon deposition process using dual rf bias frequency applications |
| US20140273461A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Carbon film hardmask stress reduction by hydrogen ion implantation |
| KR102311036B1 (ko) * | 2014-01-08 | 2021-10-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 비정질 탄소 막들 내로의 이온 주입에 의한 고 에칭 선택성 하드마스크 재료의 개발 |
| US20150200094A1 (en) * | 2014-01-10 | 2015-07-16 | Applied Materials, Inc. | Carbon film stress relaxation |
| US9695503B2 (en) | 2014-08-22 | 2017-07-04 | Applied Materials, Inc. | High power impulse magnetron sputtering process to achieve a high density high SP3 containing layer |
| US10418243B2 (en) | 2015-10-09 | 2019-09-17 | Applied Materials, Inc. | Ultra-high modulus and etch selectivity boron-carbon hardmask films |
| US10249495B2 (en) | 2016-06-28 | 2019-04-02 | Applied Materials, Inc. | Diamond like carbon layer formed by an electron beam plasma process |
| US11037798B2 (en) * | 2016-11-09 | 2021-06-15 | Tokyo Electron Limited | Self-limiting cyclic etch method for carbon-based films |
| KR102712059B1 (ko) * | 2016-12-23 | 2024-10-02 | 인텔 코포레이션 | 진보된 리소그래피 및 자기-조립 디바이스들 |
| US20180274100A1 (en) | 2017-03-24 | 2018-09-27 | Applied Materials, Inc. | Alternating between deposition and treatment of diamond-like carbon |
| US11127594B2 (en) * | 2017-12-19 | 2021-09-21 | Tokyo Electron Limited | Manufacturing methods for mandrel pull from spacers for multi-color patterning |
-
2019
- 2019-06-03 US US16/430,136 patent/US11158507B2/en active Active
- 2019-06-05 KR KR1020207035054A patent/KR102589210B1/ko active Active
- 2019-06-05 CN CN201980035288.7A patent/CN112219259B/zh active Active
- 2019-06-05 JP JP2020570738A patent/JP7366072B2/ja active Active
- 2019-06-05 SG SG11202009993YA patent/SG11202009993YA/en unknown
- 2019-06-05 WO PCT/US2019/035497 patent/WO2019245735A1/en not_active Ceased
- 2019-06-13 TW TW108120405A patent/TWI818033B/zh active
-
2021
- 2021-10-14 US US17/501,970 patent/US11557478B2/en active Active
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