JP2021034487A5 - - Google Patents
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- Publication number
- JP2021034487A5 JP2021034487A5 JP2019151441A JP2019151441A JP2021034487A5 JP 2021034487 A5 JP2021034487 A5 JP 2021034487A5 JP 2019151441 A JP2019151441 A JP 2019151441A JP 2019151441 A JP2019151441 A JP 2019151441A JP 2021034487 A5 JP2021034487 A5 JP 2021034487A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- film
- upper electrode
- gas
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 22
- 239000007789 gas Substances 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 150000002500 ions Chemical class 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- 239000000126 substance Substances 0.000 claims 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 239000012528 membrane Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019151441A JP2021034487A (ja) | 2019-08-21 | 2019-08-21 | 基板を処理する方法、デバイス製造方法、及びプラズマ処理装置 |
| US16/989,810 US11081351B2 (en) | 2019-08-21 | 2020-08-10 | Method of processing substrate, device manufacturing method, and plasma processing apparatus |
| KR1020200100009A KR20210023699A (ko) | 2019-08-21 | 2020-08-10 | 기판을 처리하는 방법, 디바이스 제조 방법, 및 플라즈마 처리 장치 |
| TW109127026A TW202113968A (zh) | 2019-08-21 | 2020-08-10 | 處理基板之方法、元件製造方法及電漿處理裝置 |
| CN202010794270.XA CN112420507B (zh) | 2019-08-21 | 2020-08-10 | 处理基板的方法、器件制造方法及等离子体处理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019151441A JP2021034487A (ja) | 2019-08-21 | 2019-08-21 | 基板を処理する方法、デバイス製造方法、及びプラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2021034487A JP2021034487A (ja) | 2021-03-01 |
| JP2021034487A5 true JP2021034487A5 (https=) | 2022-06-02 |
Family
ID=74645600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019151441A Pending JP2021034487A (ja) | 2019-08-21 | 2019-08-21 | 基板を処理する方法、デバイス製造方法、及びプラズマ処理装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11081351B2 (https=) |
| JP (1) | JP2021034487A (https=) |
| KR (1) | KR20210023699A (https=) |
| CN (1) | CN112420507B (https=) |
| TW (1) | TW202113968A (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7569752B2 (ja) * | 2021-06-07 | 2024-10-18 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7368392B2 (en) * | 2003-07-10 | 2008-05-06 | Applied Materials, Inc. | Method of fabricating a gate structure of a field effect transistor having a metal-containing gate electrode |
| JP4672456B2 (ja) * | 2004-06-21 | 2011-04-20 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP5977509B2 (ja) * | 2011-12-09 | 2016-08-24 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| JP2014082228A (ja) * | 2012-10-12 | 2014-05-08 | Tokyo Electron Ltd | プラズマエッチング方法 |
| JP6035117B2 (ja) | 2012-11-09 | 2016-11-30 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
| US8940602B2 (en) * | 2013-04-11 | 2015-01-27 | International Business Machines Corporation | Self-aligned structure for bulk FinFET |
| CN105190840B (zh) * | 2013-05-03 | 2018-10-12 | 应用材料公司 | 用于多图案化应用的光调谐硬掩模 |
| JP6643875B2 (ja) * | 2015-11-26 | 2020-02-12 | 東京エレクトロン株式会社 | エッチング方法 |
| JP6541618B2 (ja) * | 2016-05-25 | 2019-07-10 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
| JP7045152B2 (ja) * | 2017-08-18 | 2022-03-31 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
-
2019
- 2019-08-21 JP JP2019151441A patent/JP2021034487A/ja active Pending
-
2020
- 2020-08-10 US US16/989,810 patent/US11081351B2/en active Active
- 2020-08-10 KR KR1020200100009A patent/KR20210023699A/ko not_active Ceased
- 2020-08-10 TW TW109127026A patent/TW202113968A/zh unknown
- 2020-08-10 CN CN202010794270.XA patent/CN112420507B/zh active Active
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