JP2021511549A - 光学装置改善のための湿潤層 - Google Patents
光学装置改善のための湿潤層 Download PDFInfo
- Publication number
- JP2021511549A JP2021511549A JP2020541389A JP2020541389A JP2021511549A JP 2021511549 A JP2021511549 A JP 2021511549A JP 2020541389 A JP2020541389 A JP 2020541389A JP 2020541389 A JP2020541389 A JP 2020541389A JP 2021511549 A JP2021511549 A JP 2021511549A
- Authority
- JP
- Japan
- Prior art keywords
- wet layer
- metal
- film
- substrate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 56
- 239000002184 metal Substances 0.000 claims abstract description 56
- 239000000463 material Substances 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 230000003287 optical effect Effects 0.000 claims abstract description 22
- 238000000151 deposition Methods 0.000 claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 239000007769 metal material Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000005240 physical vapour deposition Methods 0.000 claims description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000003989 dielectric material Substances 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 238000000992 sputter etching Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 82
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000005019 vapor deposition process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- WYEMLYFITZORAB-UHFFFAOYSA-N boscalid Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC=C1NC(=O)C1=CC=CN=C1Cl WYEMLYFITZORAB-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000004581 coalescence Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- JMOHEPRYPIIZQU-UHFFFAOYSA-N oxygen(2-);tantalum(2+) Chemical compound [O-2].[Ta+2] JMOHEPRYPIIZQU-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
- G02B5/085—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal
- G02B5/0858—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal the reflecting layers comprising a single metallic layer with one or more dielectric layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D11/00—Producing optical elements, e.g. lenses or prisms
- B29D11/0074—Production of other optical elements not provided for in B29D11/00009- B29D11/0073
- B29D11/00788—Producing optical films
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/004—Optical devices or arrangements for the control of light using movable or deformable optical elements based on a displacement or a deformation of a fluid
- G02B26/005—Optical devices or arrangements for the control of light using movable or deformable optical elements based on a displacement or a deformation of a fluid based on electrowetting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D11/00—Producing optical elements, e.g. lenses or prisms
- B29D11/00009—Production of simple or compound lenses
- B29D11/00038—Production of contact lenses
- B29D11/00125—Auxiliary operations, e.g. removing oxygen from the mould, conveying moulds from a storage to the production line in an inert atmosphere
- B29D11/00192—Demoulding, e.g. separating lenses from mould halves
- B29D11/00211—Demoulding, e.g. separating lenses from mould halves using heating means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D11/00—Producing optical elements, e.g. lenses or prisms
- B29D11/00865—Applying coatings; tinting; colouring
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
- G02B5/085—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal
- G02B5/0875—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal the reflecting layers comprising two or more metallic layers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/284—Interference filters of etalon type comprising a resonant cavity other than a thin solid film, e.g. gas, air, solid plates
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Ophthalmology & Optometry (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Optical Filters (AREA)
- Laminated Bodies (AREA)
Abstract
Description
Claims (15)
- 光学装置を製造する方法であって、
基板を加熱することと、
前記基板上に酸化物含有材料で形成された誘電体膜を堆積させることと、
前記誘電体膜上に接して湿潤層を堆積させることと、
前記湿潤層上に接して金属含有膜を堆積させることであって、前記金属含有膜はアルミニウム、銀、及び金のうちの1又は複数を含む反射性金属材料から形成される、金属含有膜を堆積させることと
を含む方法。 - 前記酸化物含有材料は二酸化チタンである、請求項1に記載の方法。
- 前記誘電体膜はマルチレイヤスタックである、請求項1に記載の方法。
- 前記湿潤層は半導体材料を含む、請求項1に記載の方法。
- 前記湿潤層は金属材料を含む、請求項1に記載の方法。
- 前記基板上に前記誘電体膜を堆積させる前に、前記基板の表面をエッチングすること
を更に含む、請求項1に記載の方法。 - 前記誘電体膜、前記湿潤層、又は前記金属含有膜のうちの1又は複数が、物理的気相堆積プロセスによって堆積される、請求項1に記載の方法。
- 光学装置を製造する方法であって、
基板をプロセスチャンバ内に移送することと、
スパッタエッチングによって前記基板の表面を洗浄することと、
前記基板の前記表面上に、酸化物含有材料を含む誘電体層を形成することと、
前記誘電体層の上に第1の湿潤層を形成することと、
前記第1の湿潤層の上に金属層を形成することであって、前記金属層はアルミニウム、銀、及び金のうちの1又は複数を含む、金属層を形成することと、
前記金属層の上に第2の湿潤層を形成することであって、前記第2の湿潤層は前記第1の湿潤層とは異なる材料で構成される、第2の湿潤層を形成することと
を含む方法。 - 前記酸化物含有材料は二酸化チタンである、請求項8に記載の方法。
- 前記第1の湿潤層は誘電体材料を含む、請求項8に記載の方法。
- 前記第1の湿潤層は金属材料を含む、請求項8に記載の方法。
- 第2の誘電体層が前記第2の湿潤層の上に形成される、請求項8に記載の方法。
- 光学装置であって、
基板と、
前記基板上に接して配置された誘電体膜であって、酸化物含有材料を含む誘電体膜と、
前記誘電体膜上に接して配置された第1の湿潤層と、
前記湿潤層上に接して配置された金属含有膜であって、アルミニウム、銀、及び金のうちの1又は複数を含む、金属含有膜と
を備える装置。 - 前記誘電体膜は二酸化チタンを含む、請求項13に記載の装置。
- 前記金属含有膜上に接して配置された第2の湿潤層を更に備え、前記第2の湿潤層は前記第1の湿潤層とは異なる材料を含む、請求項13に記載の装置。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862623382P | 2018-01-29 | 2018-01-29 | |
US62/623,382 | 2018-01-29 | ||
US201862630591P | 2018-02-14 | 2018-02-14 | |
US62/630,591 | 2018-02-14 | ||
US201862637733P | 2018-03-02 | 2018-03-02 | |
US62/637,733 | 2018-03-02 | ||
PCT/US2019/014250 WO2019147495A1 (en) | 2018-01-29 | 2019-01-18 | Wetting layers for optical device enhancement |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021511549A true JP2021511549A (ja) | 2021-05-06 |
JP7394771B2 JP7394771B2 (ja) | 2023-12-08 |
Family
ID=67393093
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020541389A Active JP7394771B2 (ja) | 2018-01-29 | 2019-01-18 | 光学装置改善のための湿潤層 |
Country Status (7)
Country | Link |
---|---|
US (1) | US11565489B2 (ja) |
EP (1) | EP3746832A4 (ja) |
JP (1) | JP7394771B2 (ja) |
KR (1) | KR102629160B1 (ja) |
CN (1) | CN111699430B (ja) |
TW (1) | TWI688113B (ja) |
WO (1) | WO2019147495A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114855122A (zh) * | 2022-04-06 | 2022-08-05 | 湖南大学 | 一种超薄金属膜及其制备方法和应用 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06199544A (ja) * | 1992-11-24 | 1994-07-19 | Leybold Ag | 透明層系を備えた透明基板及び該系の製法 |
JPH08234004A (ja) * | 1995-02-27 | 1996-09-13 | Canon Inc | 金属ミラーおよびその製造方法 |
JP2000129464A (ja) * | 1998-10-22 | 2000-05-09 | Saint Gobain Vitrage | 薄膜積層体を備えた透明基板 |
JP2014508711A (ja) * | 2011-03-24 | 2014-04-10 | サン−ゴバン グラス フランス | 多層薄膜を有する透明基材 |
JP2016146321A (ja) * | 2015-01-30 | 2016-08-12 | 三菱マテリアル株式会社 | 積層透明導電膜、積層配線膜及び積層配線膜の製造方法 |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1064902A (ja) | 1996-07-12 | 1998-03-06 | Applied Materials Inc | アルミニウム材料の成膜方法及び成膜装置 |
JP2000171622A (ja) * | 1998-12-01 | 2000-06-23 | Canon Inc | 内面反射型の光学素子及びその製造方法 |
WO2001041544A2 (en) | 1999-12-11 | 2001-06-14 | Asm America, Inc. | Deposition of gate stacks including silicon germanium layers |
US20020060321A1 (en) | 2000-07-14 | 2002-05-23 | Kazlas Peter T. | Minimally- patterned, thin-film semiconductor devices for display applications |
US20020019783A1 (en) | 2000-08-12 | 2002-02-14 | Lg Electronics Inc. | Goods delivery system and operating method thereof |
US20030043464A1 (en) * | 2001-08-30 | 2003-03-06 | Dannenberg Rand David | Optical coatings and associated methods |
US6515335B1 (en) | 2002-01-04 | 2003-02-04 | International Business Machines Corporation | Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same |
ATE365382T1 (de) * | 2002-11-29 | 2007-07-15 | Max Planck Gesellschaft | Halbleiterstruktur für infrarotbereich und herstellungsverfahren |
JP4217093B2 (ja) * | 2003-03-27 | 2009-01-28 | スタンレー電気株式会社 | 半導体発光素子及びその製造方法 |
JP3786106B2 (ja) * | 2003-08-11 | 2006-06-14 | セイコーエプソン株式会社 | 波長可変光フィルタ及びその製造方法 |
JP4243158B2 (ja) * | 2003-09-16 | 2009-03-25 | 富士フイルム株式会社 | 光学制御素子、光学制御素子アレイ及び光学制御素子の製造方法 |
US6934085B2 (en) * | 2003-10-21 | 2005-08-23 | Guardian Industries Corp. | First surface mirror with chromium inclusive nucleation layer |
JP4340199B2 (ja) * | 2004-07-09 | 2009-10-07 | セイコーエプソン株式会社 | 有機エレクトロルミネッセンス装置の製造方法 |
WO2007001429A2 (en) * | 2004-10-25 | 2007-01-04 | The Reagents Of The University Of California | Stacked layer electrode for organic electronic devices |
DE102005029246B4 (de) | 2005-03-31 | 2023-06-22 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterchip mit einer Lötschichtenfolge und Verfahren zum Löten eines Halbleiterchips |
US8142035B2 (en) * | 2005-08-18 | 2012-03-27 | Guardian Industries Corp. | Mirror with selectively oxidized areas for memory effect and method of making same |
KR100771549B1 (ko) * | 2006-06-30 | 2007-10-31 | 주식회사 하이닉스반도체 | 반도체 소자의 금속컨택 형성방법 |
US20090220801A1 (en) * | 2008-02-29 | 2009-09-03 | Brian Wagner | Method and apparatus for growth of high purity 6h-sic single crystal |
FR2928913B1 (fr) * | 2008-03-18 | 2011-05-20 | Saint Gobain | Substrat muni d'un empilement a proprietes thermiques |
KR20100042908A (ko) * | 2008-10-17 | 2010-04-27 | 삼성전기주식회사 | 광변조 소자의 제조방법 |
KR102220018B1 (ko) | 2010-03-08 | 2021-02-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치를 제작하는 방법 |
US20140090974A1 (en) | 2011-06-30 | 2014-04-03 | Agc Glass Europe | Temperable and non-temperable transparent nanocomposite layers |
US8525232B2 (en) | 2011-08-10 | 2013-09-03 | International Business Machines Corporation | Semiconductor structure having a wetting layer |
US8520045B2 (en) | 2011-08-24 | 2013-08-27 | Palo Alto Research Center Incorporated | Single-pass imaging system with spatial light modulator and catadioptric anamorphic optical system |
FR2981346B1 (fr) * | 2011-10-18 | 2014-01-24 | Saint Gobain | Procede de traitement thermique de couches d'argent |
US9330939B2 (en) * | 2012-03-28 | 2016-05-03 | Applied Materials, Inc. | Method of enabling seamless cobalt gap-fill |
KR102132427B1 (ko) * | 2012-09-07 | 2020-07-09 | 어플라이드 머티어리얼스, 인코포레이티드 | 멀티-챔버 진공 시스템 확인 내에서의 다공성 유전체, 폴리머-코팅된 기판들 및 에폭시의 통합 프로세싱 |
FR2998564B1 (fr) * | 2012-11-23 | 2016-12-23 | Saint Gobain | Substrat muni d'un empilement a couche metallique partielle, vitrage, utilisation et procede. |
JP6242594B2 (ja) * | 2013-05-31 | 2017-12-06 | 株式会社神戸製鋼所 | 脱ガス処理装置 |
US9147767B2 (en) * | 2014-02-07 | 2015-09-29 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
US20150291812A1 (en) * | 2014-04-10 | 2015-10-15 | Intermolecular, Inc. | Low Emissivity Glass Incorporating Phosphorescent Rare Earth Compounds |
EP3136141A1 (en) * | 2015-08-26 | 2017-03-01 | Saint-Gobain Performance Plastics Corporation | Infrared reflecting film |
-
2019
- 2019-01-18 CN CN201980012469.8A patent/CN111699430B/zh active Active
- 2019-01-18 JP JP2020541389A patent/JP7394771B2/ja active Active
- 2019-01-18 WO PCT/US2019/014250 patent/WO2019147495A1/en unknown
- 2019-01-18 KR KR1020207024606A patent/KR102629160B1/ko active IP Right Grant
- 2019-01-18 EP EP19743523.3A patent/EP3746832A4/en active Pending
- 2019-01-22 TW TW108102366A patent/TWI688113B/zh active
- 2019-01-22 US US16/253,661 patent/US11565489B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06199544A (ja) * | 1992-11-24 | 1994-07-19 | Leybold Ag | 透明層系を備えた透明基板及び該系の製法 |
JPH08234004A (ja) * | 1995-02-27 | 1996-09-13 | Canon Inc | 金属ミラーおよびその製造方法 |
JP2000129464A (ja) * | 1998-10-22 | 2000-05-09 | Saint Gobain Vitrage | 薄膜積層体を備えた透明基板 |
JP2014508711A (ja) * | 2011-03-24 | 2014-04-10 | サン−ゴバン グラス フランス | 多層薄膜を有する透明基材 |
JP2016146321A (ja) * | 2015-01-30 | 2016-08-12 | 三菱マテリアル株式会社 | 積層透明導電膜、積層配線膜及び積層配線膜の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP7394771B2 (ja) | 2023-12-08 |
KR20200104927A (ko) | 2020-09-04 |
TW201937750A (zh) | 2019-09-16 |
CN111699430B (zh) | 2022-07-22 |
EP3746832A1 (en) | 2020-12-09 |
US11565489B2 (en) | 2023-01-31 |
TWI688113B (zh) | 2020-03-11 |
CN111699430A (zh) | 2020-09-22 |
KR102629160B1 (ko) | 2024-01-29 |
EP3746832A4 (en) | 2021-10-13 |
WO2019147495A1 (en) | 2019-08-01 |
US20190232586A1 (en) | 2019-08-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6814853B2 (ja) | 光学フィルタおよびその形成方法 | |
CN107012422B (zh) | 沉积方法、含添加物的氮化铝膜及包括该膜的压电器件 | |
EP3467553B1 (en) | Optical filter and sensor system | |
TWI743378B (zh) | 光學濾波器 | |
WO2004079796A3 (en) | Atomic layer deposited dielectric layers | |
WO2015012151A1 (ja) | 多層反射膜付き基板、euvリソグラフィー用反射型マスクブランク、euvリソグラフィー用反射型マスク及びその製造方法、並びに半導体装置の製造方法 | |
TWI599842B (zh) | Method of manufacturing phase shift mask | |
JP2011017782A (ja) | 反射防止膜 | |
US11865829B2 (en) | Functional element and method of manufacturing functional element, and electronic apparatus | |
JP7394771B2 (ja) | 光学装置改善のための湿潤層 | |
JP2023534997A (ja) | 深さが変化する屈折率膜の堆積のための方法 | |
CN1809770A (zh) | 制造多层光学元件的方法 | |
WO2017107181A1 (zh) | 增透膜及其制备方法 | |
JP2019066600A (ja) | プラスチックレンズ及びその製造方法 | |
US20210115550A1 (en) | Non-metal member with colored surface and method of coloring non-metal surface | |
JP7065995B2 (ja) | 反射防止膜の製造方法、および微細凹凸構造の形成方法 | |
JPH07248415A (ja) | 光学薄膜の製造方法 | |
US10955589B2 (en) | Optical coating having nano-laminate for improved durability | |
CN113249689B (zh) | 工件涂层及其制备方法与应用 | |
CN1888125A (zh) | VN/SiO2纳米多层涂层及其制备方法 | |
CN113985504B (zh) | 光学镜片 | |
CN213182092U (zh) | 减反射膜、减反射光学制品、显示屏、摄像机镜片及视窗玻璃 | |
TWI384263B (zh) | 銅銀薄膜濾色器及製法 | |
JPH06180401A (ja) | エッジフィルター | |
JP2023501154A (ja) | チタン・シード層を用いることによる窒化ケイ素界面を含まないシリコン基板上に窒化チタンを成長させる方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200918 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210831 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210907 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20211207 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20220419 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220818 |
|
C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20220818 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20220826 |
|
C21 | Notice of transfer of a case for reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C21 Effective date: 20220830 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20221014 |
|
C211 | Notice of termination of reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C211 Effective date: 20221025 |
|
C22 | Notice of designation (change) of administrative judge |
Free format text: JAPANESE INTERMEDIATE CODE: C22 Effective date: 20230418 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230816 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20231128 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7394771 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |