JP2021510394A - 臨時固定用粘着シートおよびこれを使用した半導体装置の製造方法 - Google Patents
臨時固定用粘着シートおよびこれを使用した半導体装置の製造方法 Download PDFInfo
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- JP2021510394A JP2021510394A JP2020538833A JP2020538833A JP2021510394A JP 2021510394 A JP2021510394 A JP 2021510394A JP 2020538833 A JP2020538833 A JP 2020538833A JP 2020538833 A JP2020538833 A JP 2020538833A JP 2021510394 A JP2021510394 A JP 2021510394A
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- Prior art keywords
- adhesive layer
- temporary fixing
- adhesive sheet
- acrylate
- meth
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- C—CHEMISTRY; METALLURGY
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- C—CHEMISTRY; METALLURGY
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
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Abstract
Description
本出願は2018年4月12日付韓国特許出願第10−2018−0042889号および2019年3月26日付韓国特許出願第10−2019−0034620号に基づいた優先権の利益を主張し、当該韓国特許出願の文献に開示された全ての内容は本明細書の一部として含まれる。
本発明の一実施形態によれば、基材フィルムと粘着層を含み、前記接着層を90℃〜150℃の温度で熱処理して測定した初期粘着力(A1)に対する前記熱処理された粘着層に光照射して測定した粘着力(A2)間の比率が30%以下である、臨時固定用粘着シートが提供される。
R(%)=A2’*100/A1’
上記一般式1中、A1’は、100℃で3時間熱処理した以後の前記粘着層の粘着力であり、
A2’は、前記熱処理された粘着層に200nm〜500nm領域の複合波長の紫外線を100mJ/cm2〜1000mJ/cm2光量で照射した以後に測定した粘着層の粘着力である。
本発明の一実施形態による基材フィルムは半導体の製造工程中に発生する高温の条件下で劣化および変形などが発生せず、延伸率が200%以上で延伸特性に優れてピックアップ工程時適用が容易な素材である。
本発明の一実施形態による粘着層は、前記基材フィルムの一面に形成されてもよく、前述の粘着力比率(R)を満足する特定素材から形成される。本発明において、前記粘着層は熱によって優れた粘着力を実現し、紫外線照射によって優れた粘着力低下効果を実現する素材から形成され、特に、光反応性官能基を有するバインダー樹脂と特定光開始剤を組み合わせて使用することによって、基材フィルムから相対的に低い透過率で波長が透過されても、優れた光開始効率および高温工程後にも優れた粘着力低下効果を実現することができるようにする。
本発明の他の一実施形態によれば、前述の臨時固定用粘着シートを使用した半導体装置の製造方法が提供される。
製造例1
窒素ガスが還流され温度調節が容易なように冷却装置を設置した反応器に、2−エチルヘキシルアクリレート(2−EHA)75g、4−ベンゾイルフェニルメタクリレート5gとヒドロキシエチルアクリレート(HEA)20gから構成される単量体の混合物を投入した。次いで、前記単量体混合物100gを基準にして連鎖移動剤(CTA:chain transfer agent)であるn−DDM 400ppmと溶剤としてエチルアセテート(EAc)100gを投入し、前記反応器内に酸素を除去するために窒素を注入しながら30℃で30分以上十分に混合した。以後、温度は62℃に上昇維持し、反応開始剤であるV−60(Azobisisobutylonitrile)300ppmの濃度を投入し反応を開始させた後、6時間重合して1次反応物を製造した。
窒素ガスが還流され温度調節が容易なように冷却装置を設置した反応器に、エチルアクリレート20g、2−エチルヘキシルアクリレート(2−EHA)63g、4−ベンゾイルフェニルアクリレート2gとヒドロキシエチルアクリレート(HEA)15gから構成される単量体の混合物を投入した。次いで、前記単量体混合物100gを基準にして連鎖移動剤(CTA:chain transfer agent)であるn−DDM(n−dodecyl mercaptan)400ppmと溶剤としてエチルアセテート(EAc)100gを投入し、前記反応器内に酸素を除去するために窒素を注入しながら30℃で30分以上十分に混合した。以後、温度は62℃に上昇維持し、反応開始剤であるV−60(Azobisisobutylonitrile)300ppmの濃度を投入して反応を開始させた後、6時間重合して1次反応物を製造した。
前記製造例1の(メタ)アクリレート系バインダー樹脂(a−1)100gにTDI系イソシアネート硬化剤4g、光開始剤として2,2−ジメトキシ−1,2−ジフェニルエタン−1−オン3gを混合して粘着層形成用組成物(A−3)を製造した。
窒素ガスが還流され温度調節が容易なように冷却装置を設置した反応器に、2−エチルヘキシルアクリレート(2−EHA)80g、ヒドロキシエチルアクリレート(HEA)20gから構成される単量体の混合物を投入した。次いで、前記単量体混合物100gを基準にして連鎖移動剤(CTA:chaintransferagent)であるn−DDM 400ppmと溶剤としてエチルアセテート(EAc)100gを投入し、前記反応器内に酸素を除去するために窒素を注入しながら30℃で30分以上十分に混合した。以後、温度は62℃に上昇維持し、反応開始剤であるV−60(Azobisisobutylonitrile)300ppmの濃度を投入して反応を開始させた後、6時間重合して1次反応物を製造した。
前記製造例1の(メタ)アクリレート系バインダー樹脂(a−1)100gにTDI系イソシアネート硬化剤4gを混合して粘着層形成用組成物(B−2)を製造した。
実施例1
前記製造例1の粘着層形成用組成物(A−1)を離型処理されたポリエチレンテレフタレートフィルム(厚さ38μm)上に塗布した後、110℃で3分間乾燥して約30μm厚さの粘着層を形成した。形成された粘着層100μm厚さの基材フィルムポリプロピレンフィルムに貼り合わせた後、エージングを経て臨時固定用粘着シートを得た。
下記表1の成分および使用量を適用した点を除いて実施例1と同様な方法で臨時固定用粘着シートを製造した。基材フィルムの延伸率(%)は、幅5mm、長さ40mmの試片を23℃で300mm/minの速度で引張時MD(Machine Direction)の延伸率である。
実施例および比較例によって製造された臨時固定用粘着シートに対して、下記の方法で粘着力および光硬化による剥離力を評価し、その結果を表2に記載した。
前記粘着シートに対して、Stable Micro Systems.社のTexture Analyzerを使用して300mm/minの速度、180度角度で粘着力(gf/25mm)を測定した。
前記で準備した熱処理をしていないサンプルと熱処理を行ったサンプルに対してそれぞれ光量300mJ/cm2条件の紫外線(200nm〜500nm領域の複合波長を有する水銀ランプ使用)を基材フィルム側から照射したサンプルと照射していないサンプルに対して評価した結果値を評価した。
[一般式1]
R(%)=A2’*100/A1’
上記一般式1中、A1’は100℃で3時間熱処理した以後に測定した粘着層の粘着力であり、A2’は熱処理した以後紫外線を照射した後に測定した粘着層の粘着力である。
実施例および比較例によって製造された臨時固定用粘着シートに対して、離型フィルムを剥ぎ取った後、粘着層面をミラーウエハー(8インチ、厚さ80μm)に温度25℃でマウンティングした。その次に、シリコンウエハーに付着された臨時固定用粘着シートの基材フィルム面が接触されるように100℃のホットプレートで3時間放置した熱処理したサンプルを準備した。
機器:DFD−650(DISCO)
ブレードタイプ:27HEBB(DISCO)
カッティングブレード高さ(cut depth):80um
ダイシングスピード:50mm/s
ブレード回転数:40,000rpm
機器:SPA−400(SHINKAWA)
エキスパンディング高さ:3mm
ニードル個数:10個
ニードル上げ高さ(needle piunge up height):0.2mm
ニードル上げ速度(needle piunge up speed):10mm/s
100:基材フィルム
200:粘着層
300:離型フィルム
100:基材フィルム
200、210、220:粘着層
300、310、320:離型フィルム
Claims (11)
- 23℃で300mm/minの速度で引張時、MD(Machine Direction)方向の延伸率が200%以上である基材フィルム;および
光反応性官能基を有するバインダー樹脂および300nm以上の波長で活性を有する光開始剤を含む粘着層を含み、
前記粘着層を90℃〜150℃の温度で熱処理して測定した初期粘着力(A1)に対する前記熱処理された粘着層に光照射して測定した粘着力(A2)間の比率が30%以下である、臨時固定用粘着シート。 - 前記粘着層を90℃〜150℃の温度で熱処理して測定した初期粘着力(A1)に対する前記熱処理された粘着層に光照射して測定した粘着力(A2)間の比率(R)は、下記一般式1で定義される、請求項1に記載の臨時工程用粘着シート:
[一般式1]
R(%)=A2’*100/A1’
上記一般式1中、A1’は、100℃で3時間熱処理した以後に前記粘着層の粘着力であり、
A2’は、前記熱処理された粘着層に200nm〜500nm領域の複合波長の紫外線を100mJ/cm2〜1000mJ/cm2光量で照射した以後に測定した粘着層の粘着力である。 - 前記基材フィルムは、300nm以上の波長の透過率が50%以上である、請求項1に記載の臨時固定用粘着シート。
- 前記基材フィルムは、ポリオレフィン、ポリエステル、ポリカーボネート、ポリ塩化ビニル、ポリテトラフルオロエチレン、ポリブテン、ポリブタジエン、エチレン−酢酸ビニル共重合体、エチレン−プロピレン共重合体、エチレン−アルキルアクリレート共重合体、およびポリブチレンテレフタレートからなる群より選択される1種以上の高分子化合物を含む、請求項1に記載の臨時固定用粘着シート。
- 前記バインダー樹脂は、ベンゾイルフェニル基を含む第1(メタ)アクリレート系繰り返し単位とヒドロキシ基、カルボキシ基および窒素含有官能基からなる群より選択された1種以上の官能基を含む第2(メタ)アクリレート系繰り返し単位を含み、
前記第2(メタ)アクリレート系繰り返し単位の20〜95モル%は、光重合性(メタ)アクリレート系側鎖を含む、請求項1に記載の臨時固定用粘着シート。 - 前記光開始剤は、ビス(2,4,6−トリメチルベンゾイル)−フェニル−ホスフィンオキシド、1−ヒドロキシ−シクロヘキシル−フェニル−ケトン、2,2−ジメトキシ−1,2−ジフェニルエタン−1−オン、2−メチル−1[4−(メチルチオ)フェニル]−2−モルホリノプロパン−1−オン、オキシ−フェニル−アセティックアシッド2−[2−オキソ−2−フェニル−アセトキシ−エトキシ]−エチルエステル、オキシ−フェニル−アセティックアシッド2−[2−ヒドロキシ−エトキシ]−エチルエステル、2−ベンジル−2−ジメチルアミノ−1−(4−モルホリノフェニル)−ブタン−1−オン、2,4,6−トリメチルベンゾイル−ジフェニル−ホスフィンオキシド、およびチオキサントンからなる群より選択された1種以上である、請求項1に記載の臨時固定用粘着シート。
- 半導体工程の保護フィルム、キャリアフィルムまたはピックアップ工程用フィルムとして使用される、請求項1に記載の臨時固定用粘着シート。
- 前記基材フィルムが形成されていない粘着層の一面に離型フィルムをさらに含む、請求項1に記載の臨時固定用粘着シート。
- 前記基材フィルムの一面に粘着層が形成され、
前記粘着層の基材フィルムが形成されていない面に離型フィルムをさらに含む、請求項1に記載の臨時固定用粘着シート。 - 前記粘着層は2個の層から形成され、
前記基材フィルムの両面に粘着層がそれぞれ形成され、
前記粘着層の基材フィルムが形成されていない面に離型フィルムをそれぞれさらに含む、請求項1に記載の臨時固定用粘着シート。 - 請求項1に記載の臨時固定用粘着シートの粘着層を半導体装置の所定部分に付着する段階;
前記粘着シートが付着された半導体装置に対して、所定の工程を経る段階;
前記所定の工程を経た以後、前記臨時固定用粘着シートの基材フィルムに対して紫外線を照射する段階;および
前記臨時固定用粘着シートを半導体装置から脱着する段階;を含む、半導体装置の製造方法。
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