JP2021509499A5 - - Google Patents
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- Publication number
- JP2021509499A5 JP2021509499A5 JP2020533853A JP2020533853A JP2021509499A5 JP 2021509499 A5 JP2021509499 A5 JP 2021509499A5 JP 2020533853 A JP2020533853 A JP 2020533853A JP 2020533853 A JP2020533853 A JP 2020533853A JP 2021509499 A5 JP2021509499 A5 JP 2021509499A5
- Authority
- JP
- Japan
- Prior art keywords
- memory device
- memory
- ecc
- channel mode
- data
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 14
- 230000009977 dual effect Effects 0.000 claims 7
- 238000013500 data storage Methods 0.000 claims 2
- 238000001514 detection method Methods 0.000 claims 1
- 238000013507 mapping Methods 0.000 claims 1
- 230000004044 response Effects 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/860,871 US10546628B2 (en) | 2018-01-03 | 2018-01-03 | Using dual channel memory as single channel memory with spares |
| US15/860,871 | 2018-01-03 | ||
| PCT/IB2018/060237 WO2019135134A1 (en) | 2018-01-03 | 2018-12-18 | Using dual channel memory as single channel memory with spares |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021509499A JP2021509499A (ja) | 2021-03-25 |
| JP2021509499A5 true JP2021509499A5 (enExample) | 2021-07-26 |
| JP7146920B2 JP7146920B2 (ja) | 2022-10-04 |
Family
ID=67059811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020533853A Active JP7146920B2 (ja) | 2018-01-03 | 2018-12-18 | メモリ・コントローラを動作させる方法、デュアル・チャネル・モードからシングル・チャネル・モードに切り替える方法、およびメモリ・コントローラ |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US10546628B2 (enExample) |
| EP (1) | EP3729272A4 (enExample) |
| JP (1) | JP7146920B2 (enExample) |
| CN (1) | CN111566621B (enExample) |
| WO (1) | WO2019135134A1 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11422707B2 (en) * | 2017-12-21 | 2022-08-23 | Advanced Micro Devices, Inc. | Scheduling memory requests for a ganged memory device |
| US10546628B2 (en) * | 2018-01-03 | 2020-01-28 | International Business Machines Corporation | Using dual channel memory as single channel memory with spares |
| US10606713B2 (en) | 2018-01-03 | 2020-03-31 | International Business Machines Corporation | Using dual channel memory as single channel memory with command address recovery |
| US10606698B2 (en) * | 2018-02-08 | 2020-03-31 | Micron Technology, Inc. | Mitigating an undetectable error when retrieving critical data during error handling |
| US10838831B2 (en) * | 2018-05-14 | 2020-11-17 | Micron Technology, Inc. | Die-scope proximity disturb and defect remapping scheme for non-volatile memory |
| US11048597B2 (en) * | 2018-05-14 | 2021-06-29 | Micron Technology, Inc. | Memory die remapping |
| US11055167B2 (en) | 2018-05-14 | 2021-07-06 | Micron Technology, Inc. | Channel-scope proximity disturb and defect remapping scheme for non-volatile memory |
| JP7044974B2 (ja) * | 2018-07-20 | 2022-03-31 | 富士通株式会社 | プロセッサ及び情報処理装置 |
| KR102770731B1 (ko) * | 2018-10-24 | 2025-02-24 | 삼성전자주식회사 | 메모리 모듈 및 메모리 시스템의 동작 방법 |
| CN111694772A (zh) * | 2019-03-11 | 2020-09-22 | 澜起科技股份有限公司 | 存储器控制器 |
| US11437114B1 (en) * | 2020-05-04 | 2022-09-06 | Meta Platforms, Inc. | Reduced error correction code for dual channel DDR dynamic random-access memory |
| KR20210147131A (ko) | 2020-05-27 | 2021-12-07 | 삼성전자주식회사 | 반도체 메모리 모듈을 액세스하는 방법 |
| US12373287B2 (en) * | 2021-01-22 | 2025-07-29 | Intel Corporation | Distribution of error checking and correction (ECC) bits to allocate ECC bits for metadata |
| EP4359905A4 (en) * | 2021-06-23 | 2025-10-29 | Rambus Inc | FOUR-CHANNEL MEMORY MODULE RELIABILITY |
| US20220413768A1 (en) * | 2021-06-28 | 2022-12-29 | Rambus Inc. | Memory module with double data rate command and data interfaces supporting two-channel and four-channel modes |
| US12164808B2 (en) | 2021-10-12 | 2024-12-10 | Rambus Inc. | Quad-data-rate (QDR) host interface in a memory system |
| US11893240B2 (en) * | 2021-10-28 | 2024-02-06 | Qualcomm Incorporated | Reducing latency in pseudo channel based memory systems |
| KR20230099477A (ko) | 2021-12-27 | 2023-07-04 | 삼성전자주식회사 | 로우 해머 카운터 칩을 포함하는 메모리 모듈들, 이를 포함하는 메모리 시스템 및 메모리 시스템의 동작 방법 |
| US12032443B2 (en) * | 2022-01-22 | 2024-07-09 | Micron Technology, Inc. | Shadow DRAM with CRC+RAID architecture, system and method for high RAS feature in a CXL drive |
| CN116909804B (zh) * | 2023-09-13 | 2023-12-01 | 上海云豹创芯智能科技有限公司 | 一种存储访问控制系统、方法、芯片及存储介质 |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001167001A (ja) | 1999-10-28 | 2001-06-22 | Hewlett Packard Co <Hp> | 自己回復するメモリ構成 |
| US6493843B1 (en) | 1999-10-28 | 2002-12-10 | Hewlett-Packard Company | Chipkill for a low end server or workstation |
| US7096407B2 (en) * | 2003-02-18 | 2006-08-22 | Hewlett-Packard Development Company, L.P. | Technique for implementing chipkill in a memory system |
| US7165153B2 (en) | 2003-06-04 | 2007-01-16 | Intel Corporation | Memory channel with unidirectional links |
| US8892942B2 (en) | 2007-07-27 | 2014-11-18 | Hewlett-Packard Development Company, L.P. | Rank sparing system and method |
| KR101425957B1 (ko) | 2007-08-21 | 2014-08-06 | 삼성전자주식회사 | 이씨씨 제어 회로 및 그것을 포함하는 멀티채널 메모리시스템 |
| US8006032B2 (en) | 2007-08-22 | 2011-08-23 | Globalfoundries Inc. | Optimal solution to control data channels |
| JP4862847B2 (ja) | 2008-03-07 | 2012-01-25 | 日本電気株式会社 | ディスクアレイのデータ復旧方法、ディスクアレイシステム及び制御プログラム |
| US9104557B2 (en) * | 2008-08-01 | 2015-08-11 | Lenovo Enterprise Solutions (Singapore) Pte. Ltd. | Encoded chip select for supporting more memory ranks |
| US8086783B2 (en) | 2009-02-23 | 2011-12-27 | International Business Machines Corporation | High availability memory system |
| US8176295B2 (en) | 2009-04-20 | 2012-05-08 | Imation Corp. | Logical-to-physical address translation for a removable data storage device |
| US8098539B2 (en) | 2009-08-26 | 2012-01-17 | Qualcomm Incorporated | Hybrid single and dual channel DDR interface scheme by interleaving address/control signals during dual channel operation |
| WO2013028859A1 (en) | 2011-08-24 | 2013-02-28 | Rambus Inc. | Methods and systems for mapping a peripheral function onto a legacy memory interface |
| US8902638B2 (en) | 2011-09-16 | 2014-12-02 | Inphi Corporation | Replacement of a faulty memory cell with a spare cell for a memory circuit |
| US8719493B2 (en) | 2012-03-21 | 2014-05-06 | Dell Products L.P. | Memory controller-independent memory sparing |
| WO2013147794A1 (en) | 2012-03-29 | 2013-10-03 | Intel Corporation | Enhanced storage of metadata utilizing improved error detection and correction in computer memory |
| US8914704B2 (en) | 2012-06-29 | 2014-12-16 | Intel Corporation | Mechanism for achieving high memory reliablity, availability and serviceability |
| US9087615B2 (en) * | 2013-05-03 | 2015-07-21 | International Business Machines Corporation | Memory margin management |
| EP2979272A1 (en) | 2013-07-31 | 2016-02-03 | Hewlett-Packard Development Company, L.P. | Off-memory-module ecc-supplemental memory system |
| US9128834B2 (en) | 2013-09-24 | 2015-09-08 | International Business Machines Corporation | Implementing memory module communications with a host processor in multiported memory configurations |
| US9542268B2 (en) | 2014-01-29 | 2017-01-10 | Macronix International Co., Ltd. | Dynamic data density ECC |
| US9852779B2 (en) | 2014-03-12 | 2017-12-26 | Futurewei Technologies, Inc. | Dual-port DDR4-DIMMs of SDRAM and NVRAM for SSD-blades and multi-CPU servers |
| US20150310898A1 (en) | 2014-04-23 | 2015-10-29 | Diablo Technologies Inc. | System and method for providing a configurable timing control for a memory system |
| US9600189B2 (en) * | 2014-06-11 | 2017-03-21 | International Business Machines Corporation | Bank-level fault management in a memory system |
| KR20160046391A (ko) | 2014-10-20 | 2016-04-29 | 삼성전자주식회사 | 하이브리드 딤 스트럭쳐 및 하이브리드 딤 스트럭쳐의 구동 방법 |
| US9754684B2 (en) | 2014-11-06 | 2017-09-05 | Samsung Electronics Co., Ltd. | Completely utilizing hamming distance for SECDED based ECC DIMMs |
| US9697094B2 (en) | 2015-02-06 | 2017-07-04 | Intel Corporation | Dynamically changing lockstep configuration |
| KR20160146402A (ko) | 2015-06-12 | 2016-12-21 | 에스케이하이닉스 주식회사 | 메모리 시스템 |
| US10146711B2 (en) | 2016-01-11 | 2018-12-04 | Intel Corporation | Techniques to access or operate a dual in-line memory module via multiple data channels |
| US10032497B2 (en) | 2016-04-05 | 2018-07-24 | Integrated Device Technology, Inc. | Flexible point-to-point memory topology |
| US10606713B2 (en) | 2018-01-03 | 2020-03-31 | International Business Machines Corporation | Using dual channel memory as single channel memory with command address recovery |
| US10546628B2 (en) | 2018-01-03 | 2020-01-28 | International Business Machines Corporation | Using dual channel memory as single channel memory with spares |
-
2018
- 2018-01-03 US US15/860,871 patent/US10546628B2/en active Active
- 2018-12-18 CN CN201880085092.4A patent/CN111566621B/zh active Active
- 2018-12-18 WO PCT/IB2018/060237 patent/WO2019135134A1/en not_active Ceased
- 2018-12-18 EP EP18898023.9A patent/EP3729272A4/en not_active Withdrawn
- 2018-12-18 JP JP2020533853A patent/JP7146920B2/ja active Active
-
2019
- 2019-11-05 US US16/674,235 patent/US11037619B2/en active Active
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