JP2021502701A - 加工基板構造物を使用して実現された電力デバイスおよびrfデバイス - Google Patents
加工基板構造物を使用して実現された電力デバイスおよびrfデバイス Download PDFInfo
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- JP2021502701A JP2021502701A JP2020524897A JP2020524897A JP2021502701A JP 2021502701 A JP2021502701 A JP 2021502701A JP 2020524897 A JP2020524897 A JP 2020524897A JP 2020524897 A JP2020524897 A JP 2020524897A JP 2021502701 A JP2021502701 A JP 2021502701A
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Classifications
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6683—High-frequency adaptations for monolithic microwave integrated circuit [MMIC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02047—Treatment of substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
Abstract
Description
[0001]本出願は、2017年11月6日に出願された米国特許仮出願第62/582,090号および2018年11月2日に出願された米国特許出願第16/179,351号の利益を主張し、これらの出願の内容は、その全体が本明細書に援用される。
Claims (15)
- 多結晶セラミックコアと、
前記多結晶セラミックコアに結合した第1の付着層と、
前記第1の付着層に結合した導電層と、
前記導電層に結合した第2の付着層と、
前記第2の付着層に結合したバリア層と
を備える支持構造物と、
前記支持構造物に結合したバッファ層と、
前記バッファ層に結合したコンタクト層と、
前記コンタクト層に結合した電界効果トランジスタ(FET)と
を備える、電子デバイス。 - 前記FETは、フィンFETを含む、請求項1に記載の電子デバイス。
- 前記FETは、金属酸化膜半導体電界効果トランジスタ(MOSFET)を含む、請求項1に記載の電子デバイス。
- 前記支持構造物は、
前記バリア層に結合した結合層と、
前記結合層に結合した実質的に単結晶のシリコン層と
をさらに備え、
前記バッファ層は、前記実質的に単結晶のシリコン層に結合したエピタキシャルIII−V層を含む、請求項1に記載の電子デバイス。 - 前記エピタキシャルIII−V層は、エピタキシャル窒化ガリウム層を含む、請求項4に記載の電子デバイス。
- 前記エピタキシャル窒化ガリウム層は、約5μm以上の厚さを有する、請求項5に記載の電子デバイス。
- 前記多結晶セラミックコアは、窒化アルミニウムを含む、請求項1に記載の電子デバイス。
- 前記第1の付着層は、前記多結晶セラミックコアを包む第1のテトラエチルオルトシリケート(TEOS)層を含み、
前記導電層は、前記第1のTEOS層を包むポリシリコン層を含み、
前記第2の付着層は、前記ポリシリコン層を包む第2のTEOS層を含み、
前記バリア層は、前記第2のTEOS層を包む窒化シリコン層を含む、請求項7に記載の電子デバイス。 - 前記第1のTEOS層は、約1000Åの厚さを有し、
前記ポリシリコン層は、約3000Åの厚さを有し、
前記第2のTEOS層は、約1000Åの厚さを有し、
前記窒化シリコン層は、約4000Åの厚さを有する、請求項8に記載の電子デバイス。 - 多結晶セラミックコアと、
前記多結晶セラミックコアに結合した第1の付着層と、
前記第1の付着層に結合した導電層と、
前記導電層に結合した第2の付着層と、
前記第2の付着層に結合したバリア層と
を備えており、キャビティを定める支持構造物と
前記支持構造物の一部分に機械的に結合し、一部分が前記支持構造物によって定められた前記キャビティの上方に独立しているIII−V層と、
前記III−V層の第1の表面に結合した第1の電極と、
前記III−V層の前記独立している一部分において、前記第1の表面の反対側の前記III−V層の第2の表面に結合した第2の電極と
を備える、音響共振器。 - 前記多結晶セラミックコアは、窒化アルミニウムを含む、請求項10に記載の音響共振器。
- 前記第1の付着層は、前記多結晶セラミックコアを包む第1のテトラエチルオルトシリケート(TEOS)層を含み、
前記導電層は、前記第1のTEOS層を包むポリシリコン層を含み、
前記第2の付着層は、前記ポリシリコン層を包む第2のTEOS層を含み、
前記バリア層は、前記第2のTEOS層を包む窒化シリコン層を含む、請求項10に記載の音響共振器。 - 前記支持構造物は、
前記バリア層に結合した結合層と、
前記結合層に結合した実質的に単結晶のシリコン層と、
前記実質的に単結晶のシリコン層に結合したバッファ層と
をさらに備え、
前記III−V層は、前記バッファ層上にエピタキシャル成長させられている、請求項10に記載の音響共振器。 - 前記III−V層は、エピタキシャル窒化アルミニウムまたは窒化アルミニウムガリウムを含む、請求項13に記載の音響共振器。
- 前記III−V層は、約1μmの厚さを有する、請求項14に記載の音響共振器。
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US201762582090P | 2017-11-06 | 2017-11-06 | |
US62/582,090 | 2017-11-06 | ||
US16/179,351 | 2018-11-02 | ||
US16/179,351 US10734303B2 (en) | 2017-11-06 | 2018-11-02 | Power and RF devices implemented using an engineered substrate structure |
PCT/US2018/059181 WO2019090212A1 (en) | 2017-11-06 | 2018-11-05 | Power and rf devices implemented using an engineered substrate structure |
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