JP2021197483A5 - - Google Patents
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- Publication number
- JP2021197483A5 JP2021197483A5 JP2020103997A JP2020103997A JP2021197483A5 JP 2021197483 A5 JP2021197483 A5 JP 2021197483A5 JP 2020103997 A JP2020103997 A JP 2020103997A JP 2020103997 A JP2020103997 A JP 2020103997A JP 2021197483 A5 JP2021197483 A5 JP 2021197483A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductive type
- main surface
- base region
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 7
- 239000002344 surface layer Substances 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020103997A JP7354937B2 (ja) | 2020-06-16 | 2020-06-16 | 半導体装置およびその製造方法 |
| PCT/JP2021/019669 WO2021256182A1 (ja) | 2020-06-16 | 2021-05-24 | 半導体装置およびその製造方法 |
| CN202180042364.4A CN115699269A (zh) | 2020-06-16 | 2021-05-24 | 半导体装置及其制造方法 |
| US18/062,360 US20230098207A1 (en) | 2020-06-16 | 2022-12-06 | Semiconductor device and manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020103997A JP7354937B2 (ja) | 2020-06-16 | 2020-06-16 | 半導体装置およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021197483A JP2021197483A (ja) | 2021-12-27 |
| JP2021197483A5 true JP2021197483A5 (enExample) | 2022-06-10 |
| JP7354937B2 JP7354937B2 (ja) | 2023-10-03 |
Family
ID=79196068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020103997A Active JP7354937B2 (ja) | 2020-06-16 | 2020-06-16 | 半導体装置およびその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20230098207A1 (enExample) |
| JP (1) | JP7354937B2 (enExample) |
| CN (1) | CN115699269A (enExample) |
| WO (1) | WO2021256182A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20240145462A1 (en) * | 2022-10-27 | 2024-05-02 | Globalfoundries Singapore Pte. Ltd. | Electrostatic discharge control devices |
| US12471385B2 (en) * | 2022-12-08 | 2025-11-11 | Globalfoundries Singapore Pte. Ltd. | Electrostatic discharge protection devices with multiple-depth trench isolation |
| US12396236B1 (en) | 2024-04-23 | 2025-08-19 | Globalfoundries Singapore Pte. Ltd. | High-voltage electrostatic discharge device |
| US12453156B1 (en) * | 2024-04-23 | 2025-10-21 | Globalfoundries Singapore Pte. Ltd. | High-voltage electrostatic discharge device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61114574A (ja) * | 1984-11-09 | 1986-06-02 | Hitachi Ltd | 半導体装置 |
| EP0253724A1 (en) * | 1986-07-16 | 1988-01-20 | Fairchild Semiconductor Corporation | A method of simultaneously fabricating bipolar and complementary field effect transistors using a minimal number of masks |
| JP2000183073A (ja) | 1998-12-17 | 2000-06-30 | Rohm Co Ltd | バイポーラトランジスタを含む半導体装置 |
| JP2003318188A (ja) | 2002-04-24 | 2003-11-07 | Denso Corp | ラテラルｐｎｐトランジスタおよびその製造方法 |
| JP2004140235A (ja) | 2002-10-18 | 2004-05-13 | Toshiba Corp | 半導体装置 |
-
2020
- 2020-06-16 JP JP2020103997A patent/JP7354937B2/ja active Active
-
2021
- 2021-05-24 CN CN202180042364.4A patent/CN115699269A/zh active Pending
- 2021-05-24 WO PCT/JP2021/019669 patent/WO2021256182A1/ja not_active Ceased
-
2022
- 2022-12-06 US US18/062,360 patent/US20230098207A1/en active Pending
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