JP2021127262A - 半導体装置とその製造方法 - Google Patents
半導体装置とその製造方法 Download PDFInfo
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- JP2021127262A JP2021127262A JP2020021850A JP2020021850A JP2021127262A JP 2021127262 A JP2021127262 A JP 2021127262A JP 2020021850 A JP2020021850 A JP 2020021850A JP 2020021850 A JP2020021850 A JP 2020021850A JP 2021127262 A JP2021127262 A JP 2021127262A
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- Prior art keywords
- mist
- layer
- oxide film
- gallium oxide
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000003595 mist Substances 0.000 claims abstract description 87
- 239000013078 crystal Substances 0.000 claims abstract description 21
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 6
- 239000000203 mixture Substances 0.000 claims abstract description 5
- 229910001195 gallium oxide Inorganic materials 0.000 description 67
- 239000000758 substrate Substances 0.000 description 58
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 57
- 239000000243 solution Substances 0.000 description 40
- 239000007789 gas Substances 0.000 description 29
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 16
- 238000003860 storage Methods 0.000 description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- 239000007864 aqueous solution Substances 0.000 description 12
- 239000012895 dilution Substances 0.000 description 12
- 238000010790 dilution Methods 0.000 description 12
- 229910052738 indium Inorganic materials 0.000 description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 11
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 229910001873 dinitrogen Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 125000005842 heteroatom Chemical group 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- 230000005533 two-dimensional electron gas Effects 0.000 description 4
- ZVYYAYJIGYODSD-LNTINUHCSA-K (z)-4-bis[[(z)-4-oxopent-2-en-2-yl]oxy]gallanyloxypent-3-en-2-one Chemical compound [Ga+3].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O ZVYYAYJIGYODSD-LNTINUHCSA-K 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- JSUIEZRQVIVAMP-UHFFFAOYSA-N gallium iron Chemical compound [Fe].[Ga] JSUIEZRQVIVAMP-UHFFFAOYSA-N 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- XBIUWALDKXACEA-UHFFFAOYSA-N 3-[bis(2,4-dioxopentan-3-yl)alumanyl]pentane-2,4-dione Chemical compound CC(=O)C(C(C)=O)[Al](C(C(C)=O)C(C)=O)C(C(C)=O)C(C)=O XBIUWALDKXACEA-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum acetylacetone Chemical compound 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
72 :酸化ガリウム膜
74 :アルミニウムガリウム酸化物膜
75 :ヘテロ界面
Claims (2)
- 半導体装置の製造方法であって、
ミストCVD法によって、Ga2−xFexO3(0<x<2)により構成された第1層上に、前記第1層とは異なる組成を有する半導体材料により構成されているとともに直方晶系の結晶構造を有する第2層を成長させる工程を有する、
製造方法。 - 半導体装置であって、
Ga2−xFexO3(0<x<2)により構成された第1層と、
前記第1上に配置されており、前記第1層とは異なる組成を有する半導体材料により構成されており、直方晶系の結晶構造を有する第2層、
を有する半導体装置。
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JP2021127262A true JP2021127262A (ja) | 2021-09-02 |
JP7315927B2 JP7315927B2 (ja) | 2023-07-27 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013028480A (ja) * | 2011-07-27 | 2013-02-07 | Kochi Univ Of Technology | ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法 |
JP2014063973A (ja) * | 2012-08-26 | 2014-04-10 | Kumamoto Univ | 酸化亜鉛結晶層の製造方法及び酸化亜鉛結晶層並びにミスト化学気相成長装置 |
JP2017088454A (ja) * | 2015-11-11 | 2017-05-25 | 国立大学法人京都工芸繊維大学 | 基体、発光素子および基体の製造方法 |
WO2018084304A1 (ja) * | 2016-11-07 | 2018-05-11 | 株式会社Flosfia | 結晶性酸化物半導体膜および半導体装置 |
JP2019009405A (ja) * | 2017-06-28 | 2019-01-17 | 株式会社Flosfia | 積層構造体および半導体装置 |
JP2020011859A (ja) * | 2018-07-17 | 2020-01-23 | トヨタ自動車株式会社 | 成膜方法、及び、半導体装置の製造方法 |
-
2020
- 2020-02-12 JP JP2020021850A patent/JP7315927B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013028480A (ja) * | 2011-07-27 | 2013-02-07 | Kochi Univ Of Technology | ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法 |
JP2014063973A (ja) * | 2012-08-26 | 2014-04-10 | Kumamoto Univ | 酸化亜鉛結晶層の製造方法及び酸化亜鉛結晶層並びにミスト化学気相成長装置 |
JP2017088454A (ja) * | 2015-11-11 | 2017-05-25 | 国立大学法人京都工芸繊維大学 | 基体、発光素子および基体の製造方法 |
WO2018084304A1 (ja) * | 2016-11-07 | 2018-05-11 | 株式会社Flosfia | 結晶性酸化物半導体膜および半導体装置 |
JP2019009405A (ja) * | 2017-06-28 | 2019-01-17 | 株式会社Flosfia | 積層構造体および半導体装置 |
JP2020011859A (ja) * | 2018-07-17 | 2020-01-23 | トヨタ自動車株式会社 | 成膜方法、及び、半導体装置の製造方法 |
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