JP2021093473A - Semiconductor device and semiconductor device manufacturing method - Google Patents

Semiconductor device and semiconductor device manufacturing method Download PDF

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JP2021093473A
JP2021093473A JP2019224174A JP2019224174A JP2021093473A JP 2021093473 A JP2021093473 A JP 2021093473A JP 2019224174 A JP2019224174 A JP 2019224174A JP 2019224174 A JP2019224174 A JP 2019224174A JP 2021093473 A JP2021093473 A JP 2021093473A
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metal
semiconductor device
metal connecting
connecting material
semiconductor element
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JP7412998B2 (en
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沢水 神田
Souzu Kanda
沢水 神田
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Rohm Co Ltd
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    • H—ELECTRICITY
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
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Abstract

To provide a semiconductor device and a semiconductor device manufacturing method, capable of more securely protecting a semiconductor element while reducing resistance of a conduction path.SOLUTION: A semiconductor device comprises: a semiconductor element 1; and a first metal connection material 41 that is electrically connected with the semiconductor element 1 and is made from first metal. The semiconductor device further comprises a mediation member 3 that lies between the semiconductor element 1 and the first metal connection material 41 and is made from second metal softer than the first metal. Solid phase junction interfaces 81, 82 exist between the semiconductor element 1 and the mediation member 3 and between the first metal connection material 41 and the mediation member 3, respectively.SELECTED DRAWING: Figure 2

Description

本開示は、半導体装置および当該半導体装置の製造方法に関する。 The present disclosure relates to a semiconductor device and a method for manufacturing the semiconductor device.

従来、半導体素子を備える半導体装置において、前記半導体装置の電極に通じる導通経路を構成する部材として、金属製のワイヤ等の金属接続材が用いられている。特許文献１に記載の発明においては、金属接続材としてＡｌからなるワイヤが用いられている。この金属接続材は、前記導通経路の低抵抗化に寄与する。 Conventionally, in a semiconductor device including a semiconductor element, a metal connecting material such as a metal wire has been used as a member constituting a conduction path leading to an electrode of the semiconductor device. In the invention described in Patent Document 1, a wire made of Al is used as a metal connecting material. This metal connecting material contributes to lowering the resistance of the conduction path.

特開２０１０−１７１２７１号公報Japanese Unexamined Patent Publication No. 2010-171271

しかしながら、低抵抗化に寄与しうる前記金属接続材を前記半導体素子に接合する際には、前記半導体素子に付加される力がより大きくなる傾向がある。これにより、前記半導体素子の破損等が懸念される。 However, when the metal connecting material, which can contribute to lowering the resistance, is bonded to the semiconductor element, the force applied to the semiconductor element tends to be larger. As a result, there is a concern that the semiconductor element may be damaged.

本開示は、上記した事情のもとで考え出されたものであって、導通経路の低抵抗化を図りつつ半導体素子をより確実に保護することが可能な半導体装置および半導体装置の製造方法を提供することをその課題とする。 The present disclosure has been devised under the above circumstances, and describes a semiconductor device and a method for manufacturing a semiconductor device capable of more reliably protecting a semiconductor element while reducing the resistance of the conduction path. The challenge is to provide it.

本開示の第１の側面によって提供される半導体装置は、半導体素子と、前記半導体素子に導通し且つ第１金属からなる第１金属接続材と、を備えており、前記半導体素子と前記第１金属接続材との間に介在し、前記第１金属よりも軟質である第２金属からなる介在部材をさらに備え、前記半導体素子と前記介在部材との間、および前記第１金属接続材と前記介在部材との間、の双方に固相接合界面が存在する。 The semiconductor device provided by the first aspect of the present disclosure includes a semiconductor element and a first metal connecting material conductive to the semiconductor element and made of a first metal, the semiconductor element and the first metal. An intervening member made of a second metal that is interposed between the metal connecting material and is softer than the first metal is further provided, and is intervening between the semiconductor element and the intervening member, and the first metal connecting material and the said. There are solid-phase bonding interfaces on both sides of the intervening member.

本開示の第２の側面によって提供される半導体装置の製造方法は、半導体素子と前記半導体素子に導通し且つ第１金属からなる第１金属接続材を備える半導体装置の製造方法であって、前記第１金属よりも軟質である第２金属からなる介在部材を前記半導体素子に接合する第１工程と、前記介在部材に前記第１金属接続材を接合する第２工程と、を備え、前記第１工程においては、前記第２金属からなる第２金属接続材の一部を前記半導体素子に押し付けた状態で超音波を付与することにより固相接合する処理と、前記第２金属接続材を切断することにより、前記半導体素子に接合された前記介在部材を形成する処理と、を含み、前記第２工程においては、前記第１金属接続材の一部を前記介在部材に押し付けた状態で超音波を付与することにより固相接合する処理を含む。 The method for manufacturing a semiconductor device provided by the second aspect of the present disclosure is a method for manufacturing a semiconductor device including a semiconductor device and a first metal connecting material conductive to the semiconductor device and made of a first metal. The first step of joining an intervening member made of a second metal, which is softer than the first metal, to the semiconductor element, and a second step of joining the first metal connecting material to the intervening member are provided. In one step, a process of solid-phase bonding by applying ultrasonic waves in a state where a part of the second metal connecting material made of the second metal is pressed against the semiconductor element and cutting of the second metal connecting material. This includes a process of forming the intervening member bonded to the semiconductor element, and in the second step, ultrasonic waves are provided in a state where a part of the first metal connecting material is pressed against the intervening member. Includes a process of solid-phase bonding by imparting.

本開示によれば、導通経路の低抵抗化を図りつつ半導体素子をより確実に保護することができる。 According to the present disclosure, it is possible to more reliably protect a semiconductor element while reducing the resistance of the conduction path.

本開示のその他の特徴および利点は、添付図面を参照して以下に行う詳細な説明によって、より明らかとなろう。 Other features and advantages of the present disclosure will become more apparent with the detailed description given below with reference to the accompanying drawings.

本開示の第１実施形態に係る半導体装置を示す斜視図である。It is a perspective view which shows the semiconductor device which concerns on 1st Embodiment of this disclosure. 本開示の第１実施形態に係る半導体装置を示す要部斜視図である。It is a main part perspective view which shows the semiconductor device which concerns on 1st Embodiment of this disclosure. 本開示の第１実施形態に係る半導体装置を示す平面図である。It is a top view which shows the semiconductor device which concerns on 1st Embodiment of this disclosure. 図３のＩＶ−ＩＶ線に沿う要部拡大断面図である。It is an enlarged sectional view of the main part along the IV-IV line of FIG. 本開示の第１実施形態に係る半導体装置を示す要部拡大平面図である。It is an enlarged plan view of the main part which shows the semiconductor device which concerns on 1st Embodiment of this disclosure. 図５のＶＩ−ＶＩ線に沿う要部拡大断面図である。FIG. 5 is an enlarged cross-sectional view of a main part along the VI-VI line of FIG. 本開示の第１実施形態に係る半導体装置の製造方法に用いられるウエッジの一例を示す正面図である。It is a front view which shows an example of the wedge used in the manufacturing method of the semiconductor device which concerns on 1st Embodiment of this disclosure. 本開示の第１実施形態に係る半導体装置の製造方法を示す要部拡大断面である。It is a main part enlarged cross section which shows the manufacturing method of the semiconductor device which concerns on 1st Embodiment of this disclosure. 本開示の第１実施形態に係る半導体装置の製造方法を示す要部拡大断面である。It is a main part enlarged cross section which shows the manufacturing method of the semiconductor device which concerns on 1st Embodiment of this disclosure. 本開示の第１実施形態に係る半導体装置の製造方法を示す要部拡大断面である。It is a main part enlarged cross section which shows the manufacturing method of the semiconductor device which concerns on 1st Embodiment of this disclosure. 本開示の第１実施形態に係る半導体装置の製造方法に用いられるウエッジの一例を示す正面図である。It is a front view which shows an example of the wedge used in the manufacturing method of the semiconductor device which concerns on 1st Embodiment of this disclosure. 本開示の第１実施形態に係る半導体装置の製造方法を示す要部拡大断面である。It is a main part enlarged cross section which shows the manufacturing method of the semiconductor device which concerns on 1st Embodiment of this disclosure. 本開示の第１実施形態に係る半導体装置の製造方法を示す要部拡大断面である。It is a main part enlarged cross section which shows the manufacturing method of the semiconductor device which concerns on 1st Embodiment of this disclosure. 本開示の第２実施形態に係る半導体装置を示す要部拡大平面図である。It is an enlarged plan view of the main part which shows the semiconductor device which concerns on 2nd Embodiment of this disclosure. 図１４のＸＶ−ＸＶ線に沿う要部拡大断面図である。It is an enlarged sectional view of the main part along the XV-XV line of FIG. 本開示の第３実施形態に係る半導体装置を示す要部拡大平面図である。It is an enlarged plan view of the main part which shows the semiconductor device which concerns on 3rd Embodiment of this disclosure. 図１６のＸＶＩＩ−ＸＶＩＩ線に沿う要部拡大断面図である。16 is an enlarged cross-sectional view of a main part along the line XVII-XVII of FIG. 本開示の第４実施形態に係る半導体装置を示す要部拡大平面図である。It is an enlarged plan view of the main part which shows the semiconductor device which concerns on 4th Embodiment of this disclosure. 図１８のＸＩＸ−ＸＩＸ線に沿う要部拡大断面図である。FIG. 8 is an enlarged cross-sectional view of a main part along the XIX-XIX line of FIG.

以下、本開示の好ましい実施の形態につき、図面を参照して具体的に説明する。 Hereinafter, preferred embodiments of the present disclosure will be specifically described with reference to the drawings.

本開示における「第１」、「第２」、「第３」等の用語は、単にラベルとして用いたものであり、必ずしもそれらの対象物に順列を付することを意図していない。 Terms such as "first," "second," and "third" in the present disclosure are used merely as labels and are not necessarily intended to permutate those objects.

＜第１実施形態＞
図１〜図１３は、本開示の第１実施形態に係る半導体装置および半導体装置の製造方法を示している。本実施形態の半導体装置Ａ１は、半導体素子１、複数のリード２、複数の介在部材３、第１金属接続材４１、第３金属接続材４２および樹脂パッケージ５を備えている。 <First Embodiment>
1 to 13 show a semiconductor device and a method for manufacturing the semiconductor device according to the first embodiment of the present disclosure. The semiconductor device A1 of the present embodiment includes a semiconductor element 1, a plurality of leads 2, a plurality of intervening members 3, a first metal connecting material 41, a third metal connecting material 42, and a resin package 5.

図１は、半導体装置Ａ１を示す斜視図である。図２は、半導体装置Ａ１を示す要部斜視図である。図３は、半導体装置Ａ１を示す平面図である。図４は、図３のＩＶ−ＩＶ線に沿う要部拡大断面図である。図５は、半導体装置Ａ１を示す要部拡大平面図である。図６は、図５のＶＩ−ＶＩ線に沿う要部拡大断面図である。図７は、半導体装置Ａ１の製造方法に用いられるウエッジの一例を示す正面図である。図８は、半導体装置Ａ１の製造方法を示す要部拡大断面である。図９は、半導体装置Ａ１の製造方法を示す要部拡大断面である。図１０は、半導体装置Ａ１の製造方法を示す要部拡大断面である。図１１は、半導体装置Ａ１の製造方法に用いられるウエッジの一例を示す正面図である。図１２は、半導体装置Ａ１の製造方法を示す要部拡大断面である。図１３は、半導体装置Ａ１の製造方法を示す要部拡大断面である。図２および図５においては、理解の便宜上、樹脂パッケージ５を省略している。理解の便宜上、互いに直交するｘ方向、ｙ方向、ｚ方向で規定された直交座標系を設定する。当該直交座標系において、ｘ方向の一方をｘ１方向、他方をｘ２方向とし、ｙ方向の一方をｙ１方向、他方をｙ２方向とし、ｚ方向の一方をｚ１方向、他方をｚ２方向とする。ｚ方向に平行な方向を半導体装置Ａ１の厚さ方向とする。 FIG. 1 is a perspective view showing the semiconductor device A1. FIG. 2 is a perspective view of a main part showing the semiconductor device A1. FIG. 3 is a plan view showing the semiconductor device A1. FIG. 4 is an enlarged cross-sectional view of a main part along the line IV-IV of FIG. FIG. 5 is an enlarged plan view of a main part showing the semiconductor device A1. FIG. 6 is an enlarged cross-sectional view of a main part along the VI-VI line of FIG. FIG. 7 is a front view showing an example of a wedge used in the method for manufacturing the semiconductor device A1. FIG. 8 is an enlarged cross section of a main part showing a manufacturing method of the semiconductor device A1. FIG. 9 is an enlarged cross section of a main part showing a manufacturing method of the semiconductor device A1. FIG. 10 is an enlarged cross section of a main part showing a manufacturing method of the semiconductor device A1. FIG. 11 is a front view showing an example of a wedge used in the method for manufacturing the semiconductor device A1. FIG. 12 is an enlarged cross section of a main part showing a manufacturing method of the semiconductor device A1. FIG. 13 is an enlarged cross section of a main part showing a manufacturing method of the semiconductor device A1. In FIGS. 2 and 5, the resin package 5 is omitted for convenience of understanding. For convenience of understanding, a Cartesian coordinate system defined in the x-direction, y-direction, and z-direction that are orthogonal to each other is set. In the Cartesian coordinate system, one in the x direction is the x1 direction, the other is the x2 direction, one in the y direction is the y1 direction, the other is the y2 direction, one in the z direction is the z1 direction, and the other is the z2 direction. The direction parallel to the z direction is defined as the thickness direction of the semiconductor device A1.

＜半導体素子１＞
半導体素子１は、半導体装置Ａ１の機能の中枢となる電子部品である。本実施形態においては、半導体素子１は、パワーＭＯＳＦＥＴ（Metal Oxide Semiconductor Field Effect Transistor）またはＩＧＢＴ（Insulated Gate Bipolar Transistor；絶縁ゲートバイポーラトランジスタ）などのパワー半導体素子である。半導体素子１は、これに限らず、他のトランジスタや各種ダイオード、各種サイリスタなどであってもよく、また、コントロールＩＣなどのＩＣチップであってもよい。本実施形態においては、半導体素子１は、ｚ方向視（平面視とも称する）において、１〜５ｍｍ角の矩形状であるが、これに限定されない。半導体素子１は、素子本体１１、第１主面電極１２１、第２主面電極１２２、および、裏面電極１２３を有する。 <Semiconductor element 1>
The semiconductor element 1 is an electronic component that plays a central role in the function of the semiconductor device A1. In the present embodiment, the semiconductor element 1 is a power semiconductor element such as a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) or an IGBT (Insulated Gate Bipolar Transistor). The semiconductor element 1 is not limited to this, and may be another transistor, various diodes, various thyristors, or an IC chip such as a control IC. In the present embodiment, the semiconductor element 1 has a rectangular shape of 1 to 5 mm square in the z-direction view (also referred to as a plan view), but is not limited thereto. The semiconductor element 1 has an element main body 11, a first main surface electrode 121, a second main surface electrode 122, and a back surface electrode 123.

素子本体１１は、半導体材料よりなる。本実施形態においては、当該半導体材料はＳｉまたはＳｉＣである。素子本体１１は、直方体である。素子本体１１は、素子主面１１１および素子裏面１１２を含む。 The element body 11 is made of a semiconductor material. In this embodiment, the semiconductor material is Si or SiC. The element body 11 is a rectangular parallelepiped. The element main body 11 includes an element main surface 111 and an element back surface 112.

素子主面１１１は、ｚ１方向を向く。素子裏面１１２は、ｚ２方向を向く。本実施形態においては、素子主面１１１および素子裏面１１２はともに、平坦である。 The element main surface 111 faces the z1 direction. The back surface 112 of the element faces the z2 direction. In the present embodiment, both the element main surface 111 and the element back surface 112 are flat.

第１主面電極１２１、第２主面電極１２２、および、裏面電極１２３はそれぞれ、例えば、Ｃｕ，Ｎｉ，Ａｌ，Ａｕなどのめっき層からなる。半導体素子１がパワーＭＯＳＦＥＴである場合、例えば、第１主面電極１２１はソース電極であり、第２主面電極１２２はゲート電極であり、裏面電極１２３はドレイン電極である。半導体素子１がＩＧＢＴである場合、例えば、第１主面電極１２１はエミッタ電極であり、第２主面電極１２２はゲート電極であり、裏面電極１２３はコレクタ電極である。 The first main surface electrode 121, the second main surface electrode 122, and the back surface electrode 123 are each made of a plating layer such as Cu, Ni, Al, or Au. When the semiconductor element 1 is a power MOSFET, for example, the first main surface electrode 121 is a source electrode, the second main surface electrode 122 is a gate electrode, and the back surface electrode 123 is a drain electrode. When the semiconductor element 1 is an IGBT, for example, the first main surface electrode 121 is an emitter electrode, the second main surface electrode 122 is a gate electrode, and the back surface electrode 123 is a collector electrode.

本実施形態においては、第１主面電極１２１および第２主面電極１２２は、素子主面１１１に形成されている。第２主面電極１２２の面積は、第１主面電極１２１の面積よりも小とされている。第１主面電極１２１には、複数の第１金属接続材４１が接続されている。第２主面電極１２２には、第３金属接続材４２が接続されている。 In the present embodiment, the first main surface electrode 121 and the second main surface electrode 122 are formed on the element main surface 111. The area of the second main surface electrode 122 is smaller than the area of the first main surface electrode 121. A plurality of first metal connecting materials 41 are connected to the first main surface electrode 121. A third metal connecting material 42 is connected to the second main surface electrode 122.

本実施形態においては、裏面電極１２３は、素子裏面１１２に形成されている。裏面電極１２３は、ｚ方向視において矩形状である。また、裏面電極１２３は、ｚ方向視における端縁のすべてが、素子裏面１１２のｚ方向視における端縁と一致する。よって、裏面電極１２３は、素子裏面１１２のすべてを覆っている。 In the present embodiment, the back surface electrode 123 is formed on the back surface 112 of the element. The back surface electrode 123 has a rectangular shape in the z-direction view. Further, all of the edge edges of the back surface electrode 123 in the z-direction view coincide with the edge edges of the element back surface 112 in the z-direction view. Therefore, the back surface electrode 123 covers all of the back surface 112 of the element.

＜リード２＞
リード２は、導電性材料よりなる。このような導電性材料としては、例えばＣｕが挙げられる。リード２は、たとえば電装回路基板に接合されることにより、半導体素子１と電装回路基板との導通経路をなす。本実施形態においては、リード２は、第１リード２１、第２リード２２、および、第３リード２３を有する。 <Lead 2>
The reed 2 is made of a conductive material. Examples of such a conductive material include Cu. The reed 2 forms a conduction path between the semiconductor element 1 and the electrical circuit board, for example, by being joined to the electrical circuit board. In this embodiment, the lead 2 has a first lead 21, a second lead 22, and a third lead 23.

第１リード２１は、第１パッド部２１１、第１端子部２１２、および、中間連結部２１３を含む。 The first lead 21 includes a first pad portion 211, a first terminal portion 212, and an intermediate connecting portion 213.

第１パッド部２１１は、半導体素子１を搭載する部分である。第１パッド部２１１は、パッド主面２１１ａおよびパッド裏面２１１ｂを有する。 The first pad portion 211 is a portion on which the semiconductor element 1 is mounted. The first pad portion 211 has a pad main surface 211a and a pad back surface 211b.

パッド主面２１１ａは、ｚ１方向を向く。パッド主面２１１ａは全面が平坦である。パッド主面２１１ａには、めっき層２１１ｃが形成されている。めっき層２１１ｃは、パッド主面２１１ａのうち、半導体素子１を搭載する部分を覆う。本実施形態においては、めっき層２１１ｃは、ｚ方向視において矩形状であり、半導体素子１よりも面積が大である。なお、めっき層２１１ｃは、少なくとも半導体素子１を搭載する部分を覆っていればよく、例えば、その他の部分も覆っていてもよいし、リード２の全面を覆っていてもよい。めっき層２１１ｃは、例えばＡｇからなる。なお、めっき層２１１ｃの材質はこれに限定されない。めっき層２１１ｃは、電解めっきにより形成される。また、第１パッド部２１１は、めっき層２１１ｃを有さない構成であってもよい。 The pad main surface 211a faces the z1 direction. The entire surface of the pad main surface 211a is flat. A plating layer 211c is formed on the pad main surface 211a. The plating layer 211c covers a portion of the pad main surface 211a on which the semiconductor element 1 is mounted. In the present embodiment, the plating layer 211c has a rectangular shape in the z-direction, and has a larger area than the semiconductor element 1. The plating layer 211c may cover at least a portion on which the semiconductor element 1 is mounted. For example, the plating layer 211c may also cover other portions or the entire surface of the reed 2. The plating layer 211c is made of, for example, Ag. The material of the plating layer 211c is not limited to this. The plating layer 211c is formed by electrolytic plating. Further, the first pad portion 211 may have a configuration that does not have the plating layer 211c.

めっき層２１１ｃには、たとえば導電性接合材１９を介して半導体素子１の裏面電極１２３が導通接合されている。導電性接合材１９は、たとえばＡｇペースト材、Ａｇ焼結材、はんだ等である。 The back surface electrode 123 of the semiconductor element 1 is conductively bonded to the plating layer 211c via, for example, a conductive bonding material 19. The conductive bonding material 19 is, for example, an Ag paste material, an Ag sintered material, a solder, or the like.

パッド裏面２１１ｂは、ｚ２方向を向く。パッド裏面２１１ｂは、全面が平坦である。パッド裏面２１１ｂは、全面にわたって樹脂パッケージ５から露出している。これにより、半導体装置Ａ１の放熱性を向上させている。なお、パッド裏面２１１ｂが樹脂パッケージ５に覆われていてもよい。 The pad back surface 211b faces the z2 direction. The entire surface of the pad back surface 211b is flat. The back surface 211b of the pad is exposed from the resin package 5 over the entire surface. This improves the heat dissipation of the semiconductor device A1. The back surface 211b of the pad may be covered with the resin package 5.

第１パッド部２１１には、パッド主面２１１ａからパッド裏面２１１ｂまでに至るパッド貫通孔２１１ｄが形成されている。パッド貫通孔２１１ｄは、ｚ方向視において、半導体素子１から離間している。 The first pad portion 211 is formed with a pad through hole 211d extending from the pad main surface 211a to the pad back surface 211b. The pad through hole 211d is separated from the semiconductor element 1 in the z-direction view.

第１端子部２１２は、図１〜図３に示すように、ｘ方向に沿って延びている。第１端子部２１２の一部は、樹脂パッケージ５から露出している。第１端子部２１２は、中間連結部２１３、第１パッド部２１１、めっき層２１１ｃおよび導電性接合材１９を介して、裏面電極１２３に導通している。 As shown in FIGS. 1 to 3, the first terminal portion 212 extends along the x direction. A part of the first terminal portion 212 is exposed from the resin package 5. The first terminal portion 212 is conductive to the back surface electrode 123 via the intermediate connecting portion 213, the first pad portion 211, the plating layer 211c, and the conductive bonding material 19.

中間連結部２１３は、図２および図３に示すように、第１パッド部２１１と第１端子部２１２とに繋がる。第１パッド部２１１と第１端子部２１２とは、ｚ方向における位置が異なっており、第１パッド部２１１は、第１端子部２１２よりもｚ２方向に位置する。より詳細には、第１パッド部２１１の上面（パッド主面２１１ａ）が、第１端子部２１２の下面よりもｚ２方向に位置しており、第１パッド部２１１の全体が、第１端子部２１２よりもｚ２方向に位置している。よって、中間連結部２１３は、第１パッド部２１１および第１端子部２１２に対して傾斜している。中間連結部２１３は、樹脂パッケージ５に覆われている。 As shown in FIGS. 2 and 3, the intermediate connecting portion 213 is connected to the first pad portion 211 and the first terminal portion 212. The positions of the first pad portion 211 and the first terminal portion 212 are different in the z direction, and the first pad portion 211 is located in the z2 direction with respect to the first terminal portion 212. More specifically, the upper surface of the first pad portion 211 (pad main surface 211a) is located in the z2 direction with respect to the lower surface of the first terminal portion 212, and the entire first pad portion 211 is the first terminal portion. It is located in the z2 direction from 212. Therefore, the intermediate connecting portion 213 is inclined with respect to the first pad portion 211 and the first terminal portion 212. The intermediate connecting portion 213 is covered with the resin package 5.

第２リード２２は、第２パッド部２２１および第２端子部２２２を含む。 The second lead 22 includes a second pad portion 221 and a second terminal portion 222.

第２パッド部２２１は、図２および図３に示すように、ｙ方向寸法が第２端子部２２２よりも長い。第２パッド部２２１はすべて、樹脂パッケージ５に覆われている。図２〜図５に示すように、第２パッド部２２１には、複数の第１金属接続材４１が接続されている。 As shown in FIGS. 2 and 3, the second pad portion 221 has a longer y-direction dimension than the second terminal portion 222. The second pad portion 221 is entirely covered with the resin package 5. As shown in FIGS. 2 to 5, a plurality of first metal connecting materials 41 are connected to the second pad portion 221.

第２端子部２２２は、図２および図３に示すように、ｘ方向に沿って延びている。図示の例では、第２端子部２２２は、ｙ方向に沿って測った寸法よりもｘ方向に沿って測った寸法の方が顕著に大きい（すなわち、ｘ方向に長状である）。第２端子部２２２の一部は、樹脂パッケージ５から露出している。図示の例では、第２端子部２２２の大部分が樹脂パッケージ５から露出している。 The second terminal portion 222 extends in the x direction as shown in FIGS. 2 and 3. In the illustrated example, the second terminal portion 222 has a significantly larger dimension measured along the x direction than a dimension measured along the y direction (that is, it is elongated in the x direction). A part of the second terminal portion 222 is exposed from the resin package 5. In the illustrated example, most of the second terminal portion 222 is exposed from the resin package 5.

第３リード２３は、第３パッド部２３１および第３端子部２３２を含む。 The third lead 23 includes a third pad portion 231 and a third terminal portion 232.

第３パッド部２３１は、図２および図３に示すように、ｙ方向寸法が第３端子部２３２よりも長い。第３パッド部２３１はすべて、樹脂パッケージ５に覆われている。第３パッド部２３１には、第３金属接続材４２が接続されている。 As shown in FIGS. 2 and 3, the third pad portion 231 has a y-direction dimension longer than that of the third terminal portion 232. All the third pad portions 231 are covered with the resin package 5. A third metal connecting material 42 is connected to the third pad portion 231.

第３端子部２３２は、図２および図３に示すように、第２端子部２２２と同様にｘ方向に沿って延びている。第３端子部２３２の一部は、樹脂パッケージ５から露出している。 As shown in FIGS. 2 and 3, the third terminal portion 232 extends along the x direction like the second terminal portion 222. A part of the third terminal portion 232 is exposed from the resin package 5.

第１リード２１、第２リード２２および第３リード２３は、互いに離間している。図２および図３に示すように、第１リード２１の第１端子部２１２は、ｙ方向において、第２リード２２の第２端子部２２２と第３リード２３の第３端子部２３２との間に配置される。第１端子部２１２、第２端子部２２２、および、第３端子部２３２において、樹脂パッケージ５から露出する部分は、金属製のめっき（図示略）で覆われている。例えば、当該金属製のめっきは、めっき層２１１ｃと同質である。当該金属製のめっきは電解めっきにより形成される。 The first lead 21, the second lead 22, and the third lead 23 are separated from each other. As shown in FIGS. 2 and 3, the first terminal portion 212 of the first lead 21 is located between the second terminal portion 222 of the second lead 22 and the third terminal portion 232 of the third lead 23 in the y direction. Is placed in. In the first terminal portion 212, the second terminal portion 222, and the third terminal portion 232, the portions exposed from the resin package 5 are covered with metal plating (not shown). For example, the metal plating is of the same quality as the plating layer 211c. The metal plating is formed by electrolytic plating.

＜第１金属接続材４１＞
複数の第１金属接続材４１は、半導体素子１に導通している。本実施形態においては、複数の第１金属接続材４１は、半導体素子１の第１主面電極１２１に導通している。第１金属接続材４１は、第１金属からなり、一般的にワイヤやリボンと称される細長い形状の部材である。第１金属としては、たとえばＣｕを含み、本実施形態の第１金属接続材４１は、いわゆるＣｕワイヤである。また、Ｃｕを含む第１金属接続材４１の他の例としては、芯材としてのＣｕワイヤにＡｌが被覆された、いわゆるクラッドワイヤが挙げられる。本実施形態においては、第１金属接続材４１の本数は２本であるが、これに限定されない。第１金属接続材４１の本数は、１本であってもよいし、３本以上であってもよい。 <First metal connecting material 41>
The plurality of first metal connecting materials 41 are conductive to the semiconductor element 1. In the present embodiment, the plurality of first metal connecting materials 41 are conductive to the first main surface electrode 121 of the semiconductor element 1. The first metal connecting member 41 is made of the first metal and is an elongated member generally called a wire or a ribbon. The first metal contains, for example, Cu, and the first metal connecting material 41 of the present embodiment is a so-called Cu wire. Further, as another example of the first metal connecting material 41 containing Cu, there is a so-called clad wire in which a Cu wire as a core material is coated with Al. In the present embodiment, the number of the first metal connecting material 41 is two, but the number is not limited to this. The number of the first metal connecting material 41 may be one or three or more.

第１金属接続材４１は、第１ボンディング部４１１、第２ボンディング部４１２およびブリッジ部４１３を有する。第１金属接続材４１がＣｕワイヤである場合、第１金属接続材４１は、ウエッジを用いたウエッジボンディングによって接合対象に接合される。第１ボンディング部４１１は、介在部材３を介して第１主面電極１２１に接合された部位である。第２ボンディング部４１２は、第２リード２２の第２パッド部２２１に接合された部位である。ブリッジ部４１３は、第１ボンディング部４１１と第２ボンディング部４１２とを繋いでおり、たとえば、緩やかなループ形状である。 The first metal connecting material 41 has a first bonding portion 411, a second bonding portion 412, and a bridge portion 413. When the first metal connecting material 41 is a Cu wire, the first metal connecting material 41 is joined to the bonding target by wedge bonding using a wedge. The first bonding portion 411 is a portion bonded to the first main surface electrode 121 via the intervening member 3. The second bonding portion 412 is a portion bonded to the second pad portion 221 of the second lead 22. The bridge portion 413 connects the first bonding portion 411 and the second bonding portion 412, and has, for example, a gentle loop shape.

＜第３金属接続材４２＞
第３金属接続材４２は、半導体素子１に導通している。本実施形態においては、第３金属接続材４２は、半導体素子１の第２主面電極１２２に導通している。第３金属接続材４２は、第３金属からなり、一般的にワイヤやリボンと称される細長い形状の部材である。第３金属としては、たとえばＡｕが挙げられ、本実施形態の第３金属接続材４２は、いわゆるＡｕワイヤである。このような第３金属接続材４２は、Ｃｕワイヤである第１金属接続材４１よりも線径が細い。 <Third metal connecting material 42>
The third metal connecting material 42 is conductive to the semiconductor element 1. In the present embodiment, the third metal connecting material 42 is conductive to the second main surface electrode 122 of the semiconductor element 1. The third metal connecting member 42 is made of a third metal and is an elongated member generally called a wire or a ribbon. Examples of the third metal include Au, and the third metal connecting material 42 of the present embodiment is a so-called Au wire. Such a third metal connecting material 42 has a smaller wire diameter than the first metal connecting material 41 which is a Cu wire.

第３金属接続材４２がＡｕワイヤである場合、第３金属接続材４２は、キャピラリを用いたボールボンディングによって接合対象に接合される。本実施形態においては、第３金属接続材４２は、半導体素子１２の第２主面電極１２２と第３リード２３の第３パッド部２３１とに接合されている。 When the third metal connecting material 42 is an Au wire, the third metal connecting material 42 is joined to the joining target by ball bonding using a capillary. In the present embodiment, the third metal connecting material 42 is joined to the second main surface electrode 122 of the semiconductor element 12 and the third pad portion 231 of the third lead 23.

＜介在部材３＞
介在部材３は、半導体素子１の第１主面電極１２１と第１金属接続材４１の第１ボンディング部４１１との間に介在している。介在部材３は、第２金属からなる。第２金属は、第１金属よりも軟質である。また、本実施形態においては、第２金属は、第１金属よりも抵抗率が大きい。第２金属としては、たとえば、Ａｌ、Ｎｉおよびはんだやこれらを含む合金が挙げられる。本実施形態においては、第２金属としてＡｌが選択されており、介在部材３は、Ａｌワイヤの一部によって形成されている。 <Intervening member 3>
The intervening member 3 is interposed between the first main surface electrode 121 of the semiconductor element 1 and the first bonding portion 411 of the first metal connecting member 41. The intervening member 3 is made of a second metal. The second metal is softer than the first metal. Further, in the present embodiment, the second metal has a higher resistivity than the first metal. Examples of the second metal include Al, Ni and solder, and alloys containing these. In the present embodiment, Al is selected as the second metal, and the intervening member 3 is formed by a part of the Al wire.

図５および図６に示すように、介在部材３は、第１ボンディング部４１１と略平行に延びる細長い形状である。介在部材３は、幅および長さが第１ボンディング部４１１の幅および長さよりも大きい。すなわち、第１ボンディング部４１１は、ｚ方向視において介在部材３に内包されている。本実施形態においては、１つの第１ボンディング部４１１と第１主面電極１２１との間に１つの介在部材３が介在している。介在部材３の個数は特に限定されず、本実施形態においては、２つである。介在部材３の個数は、１つでもよいし、３つ以上でもよい。 As shown in FIGS. 5 and 6, the intervening member 3 has an elongated shape extending substantially parallel to the first bonding portion 411. The width and length of the intervening member 3 are larger than the width and length of the first bonding portion 411. That is, the first bonding portion 411 is included in the intervening member 3 in the z-direction view. In the present embodiment, one intervening member 3 is interposed between one first bonding portion 411 and the first main surface electrode 121. The number of the intervening members 3 is not particularly limited, and is two in the present embodiment. The number of the intervening members 3 may be one or three or more.

図６に示すように、第１主面電極１２１と介在部材３との間には、固相接合界面８１が形成されている。固相接合界面８１は、後述のウエッジボンディングの工程において付加される超音波振動および圧力によって、第１主面電極１２１の表層と介在部材３の表層とが固相接合されたことにより生じた界面である。また、介在部材３と第１ボンディング部４１１との間には、固相接合界面８２が形成されている。固相接合界面８２は、後述のウエッジボンディングの工程において付加される超音波振動および圧力によって、介在部材３の表層と第１ボンディング部４１１の表層とが固相接合されたことにより生じた界面である。 As shown in FIG. 6, a solid phase bonding interface 81 is formed between the first main surface electrode 121 and the intervening member 3. The solid-phase bonding interface 81 is an interface formed by solid-phase bonding between the surface layer of the first main surface electrode 121 and the surface layer of the intervening member 3 by ultrasonic vibration and pressure added in the wedge bonding step described later. Is. Further, a solid phase bonding interface 82 is formed between the intervening member 3 and the first bonding portion 411. The solid-phase bonding interface 82 is an interface formed by solid-phase bonding between the surface layer of the intervening member 3 and the surface layer of the first bonding portion 411 by ultrasonic vibration and pressure added in the wedge bonding step described later. is there.

＜樹脂パッケージ５＞
樹脂パッケージ５は、半導体素子１、リード２の一部、複数の介在部材３、複数の第１金属接続材４１および第３金属接続材４２を覆う部材である。樹脂パッケージ５は、電気絶縁性を有する熱硬化性の合成樹脂である。本実施形態においては、樹脂パッケージ５は、黒色のエポキシ樹脂である。樹脂パッケージ５は、樹脂主面５１、樹脂裏面５２、一対の第１樹脂側面５３、および、一対の第２樹脂側面５４を有する。 <Resin package 5>
The resin package 5 is a member that covers the semiconductor element 1, a part of the reed 2, a plurality of intervening members 3, a plurality of first metal connecting materials 41, and a third metal connecting material 42. The resin package 5 is a thermosetting synthetic resin having electrical insulation. In this embodiment, the resin package 5 is a black epoxy resin. The resin package 5 has a resin main surface 51, a resin back surface 52, a pair of first resin side surfaces 53, and a pair of second resin side surfaces 54.

樹脂主面５１は、図４に示すように、ｚ１方向を向く。樹脂裏面５２は、ｚ２方向を向く。 As shown in FIG. 4, the resin main surface 51 faces the z1 direction. The resin back surface 52 faces the z2 direction.

一対の第１樹脂側面５３は、図１および図３に示すように、ｘ方向において互いに離間している。一対の第１樹脂側面５３は、ｘ方向において互いに反対側を向く。また、一対の第１樹脂側面５３はそれぞれ、ｚ１方向の端縁が樹脂主面５１に繋がり、ｚ２方向の端縁が樹脂裏面５２に繋がっている。本実施形態においては、ｘ２方向側に位置する第１樹脂側面５３から、第１リード２１（第１端子部２１２）、第２リード２２（第２端子部２２２）、および、第３リード２３（第３端子部２３２）のそれぞれ一部が露出している。 As shown in FIGS. 1 and 3, the pair of first resin side surfaces 53 are separated from each other in the x direction. The pair of first resin side surfaces 53 face each other in the x direction. Further, in each of the pair of first resin side surfaces 53, the edge in the z1 direction is connected to the resin main surface 51, and the edge in the z2 direction is connected to the resin back surface 52. In the present embodiment, the first lead 21 (first terminal portion 212), the second lead 22 (second terminal portion 222), and the third lead 23 (from the first resin side surface 53 located on the x2 direction side) A part of each of the third terminal portion 232) is exposed.

一対の第２樹脂側面５４は、図１および図３に示すように、ｙ方向において互いに離間している。一対の第２樹脂側面５４は、ｙ方向において互いに反対側を向く。また、一対の第２樹脂側面５４はそれぞれ、ｚ１方向の端縁が樹脂主面５１に繋がり、ｚ２方向の端縁が樹脂裏面５２に繋がっている。 As shown in FIGS. 1 and 3, the pair of second resin side surfaces 54 are separated from each other in the y direction. The pair of second resin side surfaces 54 face each other in the y direction. Further, in each of the pair of second resin side surfaces 54, the edge in the z1 direction is connected to the resin main surface 51, and the edge in the z2 direction is connected to the resin back surface 52.

樹脂パッケージ５には、図１および図３に示す一対の第２樹脂側面５４のそれぞれｚ１方向の端縁から樹脂パッケージ５の内部に窪む一対の樹脂凹部５５が形成されている。また、図１および図３に示すように、樹脂パッケージ５には、ｚ方向において樹脂主面５１から樹脂裏面５２に至る樹脂貫通孔５６が形成されている。本実施形態においては、ｚ方向視において、樹脂貫通孔５６の中心は、パッド貫通孔２１１ｄの中心と一致する。樹脂貫通孔５６の直径は、パッド貫通孔２１１ｄの直径よりも小である。本実施形態においては、パッド貫通孔２１１ｄの孔壁はすべて、樹脂パッケージ５によって覆われている。樹脂貫通孔５６にねじなどの締結部材を挿通させて、ヒートスプレッダなどの放熱機能を備える部材を取り付けることで、半導体装置Ａ１の放熱性能の向上を図ることができる。 The resin package 5 is formed with a pair of resin recesses 55 recessed inside the resin package 5 from the edges of the pair of second resin side surfaces 54 shown in FIGS. 1 and 3, respectively, in the z1 direction. Further, as shown in FIGS. 1 and 3, the resin package 5 is formed with a resin through hole 56 extending from the resin main surface 51 to the resin back surface 52 in the z direction. In the present embodiment, the center of the resin through hole 56 coincides with the center of the pad through hole 211d in the z-direction view. The diameter of the resin through hole 56 is smaller than the diameter of the pad through hole 211d. In the present embodiment, all the hole walls of the pad through holes 211d are covered with the resin package 5. By inserting a fastening member such as a screw through the resin through hole 56 and attaching a member having a heat dissipation function such as a heat spreader, the heat dissipation performance of the semiconductor device A1 can be improved.

＜半導体装置Ａ１の製造方法＞
次に、半導体装置Ａ１の製造方法について、図７〜図１３を参照しつつ以下に説明する。 <Manufacturing method of semiconductor device A1>
Next, the manufacturing method of the semiconductor device A1 will be described below with reference to FIGS. 7 to 13.

図７は、介在部材３の形成に用いられるウエッジツール６Ａの一例を示している。ウエッジツール６Ａは、ウエッジ６１Ａ、ワイヤガイド６２Ａおよびカッタ６３Ａを有している。その他、これらを支持し、超音波振動を付加するホーン、ホーンを支持する本体、第２金属接続材３０１を巻回するワイヤリールなどを備えているが、これらの図示および説明は省略する。第２金属接続材３０１は、第２金属からなり、本実施形態においては、たとえばＡｌワイヤである。 FIG. 7 shows an example of the wedge tool 6A used for forming the intervening member 3. The wedge tool 6A has a wedge 61A, a wire guide 62A and a cutter 63A. In addition, a horn that supports these and adds ultrasonic vibration, a main body that supports the horn, a wire reel that winds the second metal connecting material 301, and the like are provided, but the illustration and description thereof will be omitted. The second metal connecting material 301 is made of a second metal, and in the present embodiment, it is, for example, an Al wire.

ウエッジ６１Ａは、第２金属接続材３０１を押し付けるとともに、超音波振動によって接合対象に第２金属接続材３０１を接合するものである。ウエッジ６１Ａは、たとえばタングステンカーバイトからなる。ウエッジ６１Ａには、ガイド溝６１１Ａが形成されている。ガイド溝６１１Ａは、ウエッジ６１Ａの下端に設けられている。ガイド溝６１１Ａの断面形状は特に限定されず、たとえばＶ字状である。ワイヤガイド６２Ａは、ウエッジ６１Ａに対して固定されており、前記ワイヤリールに巻回された第２金属接続材３０１をウエッジ６１Ａへと導くためのものである。カッタ６３Ａは、第２金属接続材３０１を切断するためのものである。カッタ６３Ａはウエッジ６１Ａに隣接して配置されている。図示された例においては、ワイヤガイド６２Ａとカッタ６３Ａとは、ウエッジ６１Ａを挟んで反対側に配置されている。 The wedge 61A presses the second metal connecting material 301 and joins the second metal connecting material 301 to the joining target by ultrasonic vibration. The wedge 61A is made of, for example, tungsten carbide. A guide groove 611A is formed in the wedge 61A. The guide groove 611A is provided at the lower end of the wedge 61A. The cross-sectional shape of the guide groove 611A is not particularly limited, and is, for example, V-shaped. The wire guide 62A is fixed to the wedge 61A and is for guiding the second metal connecting member 301 wound around the wire reel to the wedge 61A. The cutter 63A is for cutting the second metal connecting material 301. The cutter 63A is arranged adjacent to the wedge 61A. In the illustrated example, the wire guide 62A and the cutter 63A are arranged on opposite sides of the wedge 61A.

図８に示すように、第１リード２１の第１パッド部２１１のパッド主面２１１ａに設けられためっき層２１１ｃに、導電性接合材１９を用いて半導体素子１の裏面電極１２３を導通接合する。導電性接合材１９は、たとえばＡｇペースト材、Ａｇ焼結材、はんだ等である。 As shown in FIG. 8, the back electrode 123 of the semiconductor element 1 is conductively bonded to the plating layer 211c provided on the pad main surface 211a of the first pad portion 211 of the first lead 21 by using the conductive bonding material 19. .. The conductive bonding material 19 is, for example, an Ag paste material, an Ag sintered material, a solder, or the like.

次いであらかじめウェッジボンディング可能な状態とされたウエッジツール６Ａのウエッジ６１Ａの先端を半導体素子１の第１主面電極１２１の直上に位置させる。そして、ウエッジ６１Ａの先端を第１主面電極１２１に向かわせる。このとき、第２金属接続材３０１の先端部分は、ガイド溝６１１Ａに嵌っている。 Next, the tip of the wedge 61A of the wedge tool 6A, which has been previously wedge-bondable, is positioned directly above the first main surface electrode 121 of the semiconductor element 1. Then, the tip of the wedge 61A is directed toward the first main surface electrode 121. At this time, the tip portion of the second metal connecting member 301 is fitted in the guide groove 611A.

次いで、ウエッジツール６Ａを用いてウェッジボンディングを行う。具体的には、ウエッジ６１Ａを第１主面電極１２１に押し付けつつ、超音波振動を付加する。このとき、超音波振動により、第２金属接続材３０１の先端部分が押しつぶされる。これにより、第２金属接続材３０１の先端部分と第１主面電極１２１とが超音波接合される。この超音波接合により、第１主面電極１２１と介在部材３との間には、固相接合界面８１が形成される。 Next, wedge bonding is performed using the wedge tool 6A. Specifically, ultrasonic vibration is applied while pressing the wedge 61A against the first main surface electrode 121. At this time, the tip portion of the second metal connecting member 301 is crushed by the ultrasonic vibration. As a result, the tip portion of the second metal connecting material 301 and the first main surface electrode 121 are ultrasonically bonded. By this ultrasonic bonding, a solid phase bonding interface 81 is formed between the first main surface electrode 121 and the intervening member 3.

次いで、図９に示すように、ウエッジツール６を図左方（ｘ２方向）に移動させる。この移動により、カッタ６３Ａは、第２金属接続材３０１のうち第１主面電極１２１に超音波接合された部分の端部付近に位置する。次いで、カッタ６３Ａを下降させる。カッタ６３Ａの下降により、たとえば、第２金属接続材３０１に切れ目が付けられる。カッタ６３Ａの下降量は、カッタ６３Ａが第２金属接続材３０１を完全に切断してしまわない程度に設定されている。この後は、ウエッジ６１Ａとともに第２金属接続材３０１を第１主面電極１２１から離間させる。これにより、切れ目がつけられた第２金属接続材３０１は切断され、図１０に示す介在部材３が形成される。このように形成された介在部材３は、第２金属接続材３０１としてのＡｌワイヤの一部によって形成されている。 Next, as shown in FIG. 9, the wedge tool 6 is moved to the left side (x2 direction) of the figure. Due to this movement, the cutter 63A is located near the end of the portion of the second metal connecting member 301 that is ultrasonically bonded to the first main surface electrode 121. Then, the cutter 63A is lowered. By lowering the cutter 63A, for example, the second metal connecting member 301 is cut. The amount of descent of the cutter 63A is set so that the cutter 63A does not completely cut the second metal connecting member 301. After that, the second metal connecting member 301 is separated from the first main surface electrode 121 together with the wedge 61A. As a result, the cut second metal connecting member 301 is cut, and the intervening member 3 shown in FIG. 10 is formed. The intervening member 3 thus formed is formed by a part of the Al wire as the second metal connecting member 301.

図１１は、第１金属接続材４１の形成に用いられるウエッジツール６の一例を示している。ウエッジツール６は、ウエッジ６１、ワイヤガイド６２およびカッタ６３を有している。その他、これらを支持し、超音波振動を付加するホーン、ホーンを支持する本体、第１金属接続材４０１を巻回するワイヤリールなどを備えているが、これらの図示および説明は省略する。第１金属接続材４０１は、第１金属からなり、本実施形態においては、たとえばＣｕワイヤである。本実施形態においては、第１金属接続材４０１の線径は、第２金属接続材３０１の線経よりも細い。 FIG. 11 shows an example of the wedge tool 6 used for forming the first metal connecting material 41. The wedge tool 6 has a wedge 61, a wire guide 62 and a cutter 63. In addition, a horn that supports these and adds ultrasonic vibration, a main body that supports the horn, a wire reel that winds the first metal connecting material 401, and the like are provided, but the illustration and description thereof will be omitted. The first metal connecting material 401 is made of the first metal, and in the present embodiment, it is, for example, a Cu wire. In the present embodiment, the wire diameter of the first metal connecting material 401 is smaller than the wire diameter of the second metal connecting material 301.

ウエッジ６１は、第１金属接続材４０１を押し付けるとともに、超音波振動によって接合対象に第１金属接続材４０１を接合するものである。ウエッジ６１は、たとえばタングステンカーバイトからなる。ウエッジ６１には、ガイド溝６１１が形成されている。ガイド溝６１１は、ウエッジ６１の下端に設けられている。ガイド溝６１１の断面形状は特に限定されず、たとえばＶ字状である。ウエッジ６１の大きさ（ガイド溝６１１の長さ）は、ウエッジ６１Ａの大きさ（ガイド溝６１１Ａの長さ）よりも小さいものを用いてもよい。ワイヤガイド６２は、ウエッジ６１に対して固定されており、前記ワイヤリールに巻回された第１金属接続材４０１をウエッジ６１へと導くためのものである。カッタ６３は、第１金属接続材４０１を切断するためのものである。カッタ６３はウエッジ６１に隣接して配置されている。図示された例においては、ワイヤガイド６２とカッタ６３とは、ウエッジ６１を挟んで反対側に配置されている。 The wedge 61 presses the first metal connecting material 401 and joins the first metal connecting material 401 to the joining target by ultrasonic vibration. The wedge 61 is made of, for example, tungsten carbide. A guide groove 611 is formed in the wedge 61. The guide groove 611 is provided at the lower end of the wedge 61. The cross-sectional shape of the guide groove 611 is not particularly limited, and is, for example, V-shaped. The size of the wedge 61 (the length of the guide groove 611) may be smaller than the size of the wedge 61A (the length of the guide groove 611A). The wire guide 62 is fixed to the wedge 61 and is for guiding the first metal connecting member 401 wound around the wire reel to the wedge 61. The cutter 63 is for cutting the first metal connecting material 401. The cutter 63 is arranged adjacent to the wedge 61. In the illustrated example, the wire guide 62 and the cutter 63 are arranged on opposite sides of the wedge 61.

図１２に示すように、あらかじめウェッジボンディング可能な状態とされたウエッジツール６のウエッジ６１の先端を半導体素子１の第１主面電極１２１に接合された介在部材３の直上に位置させる。そして、ウエッジ６１の先端を介在部材３に向かわせる。このとき、第１金属接続材４０１の先端部分は、ガイド溝６１１に嵌っている。 As shown in FIG. 12, the tip of the wedge 61 of the wedge tool 6 which has been made wedge-bondable in advance is positioned directly above the intervening member 3 bonded to the first main surface electrode 121 of the semiconductor element 1. Then, the tip of the wedge 61 is directed toward the intervening member 3. At this time, the tip portion of the first metal connecting member 401 is fitted in the guide groove 611.

次いで、ウエッジツール６を用いてウェッジボンディングを行う。具体的には、ウエッジ６１を介在部材３に押し付けつつ、超音波振動を付加する。このとき、超音波振動により、第１金属接続材４０１の先端部分が押しつぶされる。これにより、第１金属接続材４０１の先端部分と介在部材３とが超音波接合される。この超音波接合により、介在部材３と第１金属接続材４０１（第１ボンディング部４１１）の間には、固相接合界面８２が形成される。 Next, wedge bonding is performed using the wedge tool 6. Specifically, ultrasonic vibration is applied while pressing the wedge 61 against the intervening member 3. At this time, the tip portion of the first metal connecting material 401 is crushed by the ultrasonic vibration. As a result, the tip portion of the first metal connecting member 401 and the intervening member 3 are ultrasonically bonded. By this ultrasonic bonding, a solid phase bonding interface 82 is formed between the intervening member 3 and the first metal connecting member 401 (first bonding portion 411).

次いで、図１３に示すように、ウエッジツール６を図左方（ｘ２方向）に移動させる。この移動により、カッタ６３は、介在部材３に超音波接合された第１ボンディング部４１１の端部付近に位置する。次いで、第１金属接続材４０１を繰り出しつつ、ウエッジツール６を第２パッド部２２１の直上に移動させる。そして、ウエッジ６１を第２パッド部２２１に押し付けつつ、超音波振動を付加する。このとき、超音波振動により、第１金属接続材４０１の一部が押しつぶされる。これにより、第１金属接続材４０１の一部と介在部材３とが超音波接合され、第２ボンディング部４１２が形成される。 Next, as shown in FIG. 13, the wedge tool 6 is moved to the left side (x2 direction) of the figure. Due to this movement, the cutter 63 is located near the end of the first bonding portion 411 ultrasonically bonded to the intervening member 3. Next, the wedge tool 6 is moved directly above the second pad portion 221 while feeding out the first metal connecting material 401. Then, while pressing the wedge 61 against the second pad portion 221, ultrasonic vibration is applied. At this time, a part of the first metal connecting material 401 is crushed by the ultrasonic vibration. As a result, a part of the first metal connecting member 401 and the intervening member 3 are ultrasonically bonded to form the second bonding portion 412.

この後は、ウエッジツール６を移動させ、カッタ６３を第２ボンディング部４１２の端部に位置させる。そして、カッタ６３Ａを下降させる。カッタ６３の下降により、たとえば、第１金属接続材４０１に切れ目が付けられる。カッタ６３の下降量は、カッタ６３が第１金属接続材４０１を完全に切断してしまわない程度に設定されている。この後は、ウエッジ６１とともに第１金属接続材４０１を介在部材３から離間させる。これにより、切れ目がつけられた第１金属接続材４０１は切断され、第１金属接続材４１が形成される。 After this, the wedge tool 6 is moved to position the cutter 63 at the end of the second bonding portion 412. Then, the cutter 63A is lowered. By lowering the cutter 63, for example, the first metal connecting member 401 is cut. The amount of lowering of the cutter 63 is set so that the cutter 63 does not completely cut the first metal connecting member 401. After this, the first metal connecting member 401 is separated from the intervening member 3 together with the wedge 61. As a result, the cut first metal connecting material 401 is cut, and the first metal connecting material 41 is formed.

これ以降は、たとえば第３金属接続材４２および樹脂パッケージ５の形成工程を経ることにより、上述の半導体装置Ａ１が得られる。 After that, the above-mentioned semiconductor device A1 can be obtained, for example, by going through the steps of forming the third metal connecting material 42 and the resin package 5.

次に、半導体装置Ａ１および半導体装置Ａ１の製造方法の作用について説明する。 Next, the operation of the semiconductor device A1 and the manufacturing method of the semiconductor device A1 will be described.

本実施形態によれば、半導体素子１の第１主面電極１２１と第１金属接続材４１の第１ボンディング部４１１との間には、介在部材３が介在している。介在部材３は、第１金属接続材４１を構成する第１金属よりも軟質である第２金属によって構成されている。このため、第１ボンディング部４１１を形成するためのウエッジボンディングにおける超音波振動および圧力が、半導体素子１に及ぼす影響を抑制することができる。また、第１金属接続材４１を構成する第１金属は、介在部材３を構成する第２金属よりも抵抗率が小さい。したがって、導通経路の低抵抗化を図りつつ半導体素子１をより確実に保護することができる。 According to the present embodiment, the intervening member 3 is interposed between the first main surface electrode 121 of the semiconductor element 1 and the first bonding portion 411 of the first metal connecting member 41. The intervening member 3 is made of a second metal that is softer than the first metal that constitutes the first metal connecting member 41. Therefore, it is possible to suppress the influence of the ultrasonic vibration and the pressure in the wedge bonding for forming the first bonding portion 411 on the semiconductor element 1. Further, the resistivity of the first metal constituting the first metal connecting member 41 is smaller than that of the second metal constituting the intervening member 3. Therefore, the semiconductor element 1 can be more reliably protected while reducing the resistance of the conduction path.

介在部材３をウエッジツール６Ａを用いたウエッジボンディングによって形成することにより、たとえばめっき等の手法によって金属部材を形成する場合と比べて、より厚い形状の介在部材３を形成することが可能である。これは、半導体素子１への影響を抑制するのに好ましい。また、第１主面電極１２１と介在部材３との間には、固相接合界面８１が形成されており、介在部材３と第１金属接続材４１との間には、固相接合界面８２が形成されている。これは、導通経路の低抵抗化に寄与する。 By forming the intervening member 3 by wedge bonding using the wedge tool 6A, it is possible to form the intervening member 3 having a thicker shape as compared with the case where the metal member is formed by a method such as plating. This is preferable for suppressing the influence on the semiconductor element 1. Further, a solid phase bonding interface 81 is formed between the first main surface electrode 121 and the intervening member 3, and a solid phase bonding interface 82 is formed between the intervening member 3 and the first metal connecting member 41. Is formed. This contributes to lowering the resistance of the conduction path.

本実施形態においては、複数の介在部材３が設けられている。複数の介在部材３には、複数の第１金属接続材４１が個別に超音波接合されている。これにより、各第１金属接続材４１と第１主面電極１２１との間に、介在部材３をより確実に介在させることができる。また、複数の介在部材３が互いに離間していることにより、一方の介在部材３に対する第１金属接続材４１の超音波接合によって、隣り合う介在部材３が不当に変形すること等を回避することができる。 In this embodiment, a plurality of intervening members 3 are provided. A plurality of first metal connecting members 41 are individually ultrasonically bonded to the plurality of intervening members 3. As a result, the intervening member 3 can be more reliably interposed between the first metal connecting member 41 and the first main surface electrode 121. Further, since the plurality of intervening members 3 are separated from each other, it is possible to prevent the adjacent intervening members 3 from being unreasonably deformed by ultrasonic bonding of the first metal connecting member 41 to one of the intervening members 3. Can be done.

図１４〜図１９は、本開示の他の実施形態を示している。なお、これらの図において、上記実施形態と同一または類似の要素には、上記実施形態と同一の符号を付している。 14-19 show other embodiments of the present disclosure. In these figures, the same or similar elements as those in the above embodiment are designated by the same reference numerals as those in the above embodiment.

＜第２実施形態＞
図１４および図１５は、本開示の第２実施形態に係る半導体装置を示している。本実施形態の半導体装置Ａ２においては、複数の介在部材３が互いに接するように形成されている。すなわち、複数の介在部材３が、一塊の金属部材を構成している。 <Second Embodiment>
14 and 15 show the semiconductor device according to the second embodiment of the present disclosure. In the semiconductor device A2 of the present embodiment, a plurality of intervening members 3 are formed so as to be in contact with each other. That is, the plurality of intervening members 3 constitute a mass of metal members.

図示された例においては、複数の介在部材３が一体的に形成された部材に、複数の第１金属接続材４１が互いに離間して超音波接合されている。 In the illustrated example, a plurality of first metal connecting members 41 are ultrasonically bonded to a member in which a plurality of intervening members 3 are integrally formed so as to be separated from each other.

本実施形態によっても、導通経路の低抵抗化を図りつつ半導体素子１をより確実に保護することができる。また、複数の介在部材３を互いに接しさせることにより、第１金属接続材４１の接合対象をより大きな一体的な金属部材とすることが可能である。これは、仮に第１金属接続材４１のウエッジボンディングにおける第１ボンディング部４１１の形成において接合位置の誤差が生じた場合であっても、適切な接合を実現しやすいという利点がある。 Also in this embodiment, the semiconductor element 1 can be more reliably protected while reducing the resistance of the conduction path. Further, by bringing the plurality of intervening members 3 into contact with each other, it is possible to make the joining target of the first metal connecting member 41 a larger integrated metal member. This has an advantage that even if an error occurs in the bonding position in the formation of the first bonding portion 411 in the wedge bonding of the first metal connecting material 41, it is easy to realize an appropriate bonding.

＜第３実施形態＞
図１６および図１７は、本開示の第３実施形態に係る半導体装置を示している。本実施形態の半導体装置Ａ３においては、介在部材３は、第１金属接続材４１に対して顕著に幅広の部材によって構成されている。また、１つの介在部材３に対して、複数の第１金属接続材４１が超音波接合されている。このような介在部材３は、たとえばＡｌリボンと称される帯状の第２金属接続材３０１の一部によって形成される。 <Third Embodiment>
16 and 17 show a semiconductor device according to a third embodiment of the present disclosure. In the semiconductor device A3 of the present embodiment, the intervening member 3 is composed of a member that is remarkably wider than the first metal connecting member 41. Further, a plurality of first metal connecting members 41 are ultrasonically bonded to one intervening member 3. Such an intervening member 3 is formed of, for example, a part of a strip-shaped second metal connecting member 301 called an Al ribbon.

本実施形態によっても、導通経路の低抵抗化を図りつつ半導体素子１をより確実に保護することができる。また、帯状の第２金属接続材３０１の一部によって介在部材３を形成することにより、たとえば１回のウエッジボンディングによって、より広い面積を有する介在部材３を形成することができる。 Also in this embodiment, the semiconductor element 1 can be more reliably protected while reducing the resistance of the conduction path. Further, by forming the intervening member 3 with a part of the strip-shaped second metal connecting material 301, the intervening member 3 having a wider area can be formed by, for example, one wedge bonding.

＜第４実施形態＞
図１８および図１９は、本開示の第４実施形態に係る半導体装置を示している。本実施形態の半導体装置Ａ４においては、介在部材３が帯状の第２金属接続材３０１の一部によって形成されており、第１金属接続材４１が、帯状の第１金属接続材４０１を用いて形成されている。第２金属接続材３０１の一例としては、Ａｌリボンが挙げられ、第１金属接続材４０１の一例としては、Ｃｕリボンが挙げられる。本実施形態においては、１つの介在部材３に１つの第１金属接続材４１が超音波接合されている。 <Fourth Embodiment>
18 and 19 show the semiconductor device according to the fourth embodiment of the present disclosure. In the semiconductor device A4 of the present embodiment, the intervening member 3 is formed by a part of the band-shaped second metal connecting material 301, and the first metal connecting material 41 uses the band-shaped first metal connecting material 401. It is formed. An example of the second metal connecting material 301 is an Al ribbon, and an example of the first metal connecting material 401 is a Cu ribbon. In this embodiment, one first metal connecting member 41 is ultrasonically bonded to one intervening member 3.

本実施形態によっても、導通経路の低抵抗化を図りつつ半導体素子１をより確実に保護することができる。また、帯状の第２金属接続材３０１の一部によって介在部材３を形成することにより、たとえば１回のウエッジボンディングによって、より広い面積を有する介在部材３を形成することができる。また、帯状の第１金属接続材４０１を用いて第１金属接続材４１を形成することにより、さらなる低抵抗化を図ることができる。 Also in this embodiment, the semiconductor element 1 can be more reliably protected while reducing the resistance of the conduction path. Further, by forming the intervening member 3 with a part of the strip-shaped second metal connecting material 301, the intervening member 3 having a wider area can be formed by, for example, one wedge bonding. Further, by forming the first metal connecting material 41 by using the strip-shaped first metal connecting material 401, the resistance can be further reduced.

本開示に係る半導体装置および半導体装置の製造方法は、上述した実施形態に限定されるものではない。本開示に係る半導体装置および半導体装置の製造方法の具体的な構成は、種々に設計変更自在である。 The semiconductor device and the method for manufacturing the semiconductor device according to the present disclosure are not limited to the above-described embodiments. The specific configuration of the semiconductor device and the method for manufacturing the semiconductor device according to the present disclosure can be freely redesigned.

〔付記１〕
半導体素子と、
前記半導体素子に導通し且つ第１金属からなる第１金属接続材と、
を備えており、
前記半導体素子と前記第１金属接続材との間に介在し、前記第１金属よりも軟質である第２金属からなる介在部材をさらに備え、
前記半導体素子と前記介在部材との間、および前記第１金属接続材と前記介在部材との間、の双方に固相接合界面が存在する、半導体装置。
〔付記２〕
前記第１金属は、Ｃｕを含む、付記１に記載の半導体装置。
〔付記３〕
前記第２金属は、Ａｌ、Ｎｉおよびはんだのいずれかを含む、付記２に記載の半導体装置。
〔付記４〕
前記第１金属接続材は、金属ワイヤである、付記１ないし３のいずれかに記載の半導体装置。
〔付記５〕
前記第１金属接続材は、金属リボンである、付記１ないし３のいずれかに記載の半導体装置。
〔付記６〕
前記介在部材は、金属ワイヤの一部である、付記１ないし５のいずれかに記載の半導体装置。
〔付記７〕
前記介在部材は、金属リボンの一部である、付記１ないし５のいずれかに記載の半導体装置。
〔付記８〕
互いに接し合う複数の前記介在部材を備える、付記１ないし７のいずれかに記載の半導体装置。
〔付記９〕
１つの前記介在部材に複数の前記第１金属接続材が接合されている、付記１ないし７のいずれかに記載の半導体装置の製造方法。
〔付記１０〕
半導体素子と前記半導体素子に導通し且つ第１金属からなる第１金属接続材を備える半導体装置の製造方法であって、
前記第１金属よりも軟質である第２金属からなる介在部材を前記半導体素子に接合する第１工程と、
前記介在部材に前記第１金属接続材を接合する第２工程と、を備え、
前記第１工程においては、前記第２金属からなる第２金属接続材の一部を前記半導体素子に押し付けた状態で超音波を付与することにより固相接合する処理と、前記第２金属接続材を切断することにより、前記半導体素子に接合された前記介在部材を形成する処理と、を含み、
前記第２工程においては、前記第１金属接続材の一部を前記介在部材に押し付けた状態で超音波を付与することにより固相接合する処理を含む、半導体装置の製造方法。
〔付記１１〕
前記第１金属は、Ｃｕを含む、付記１０に記載の半導体装置の製造方法。
〔付記１２〕
前記第２金属は、Ａｌ、Ｎｉおよびはんだのいずれかを含む、付記１１に記載の半導体装置の製造方法。
〔付記１３〕
前記第１金属接続材は、金属ワイヤである、付記１０ないし１２のいずれかに記載の半導体装置の製造方法。
〔付記１４〕
前記第１金属接続材は、金属リボンである、付記１０ないし１２のいずれかに記載の半導体装置の製造方法。
〔付記１５〕
前記第２金属接続材は、金属ワイヤである、付記１０ないし１４のいずれかに記載の半導体装置の製造方法。
〔付記１６〕
前記第２金属接続材は、金属リボンである、付記１０ないし１４のいずれかに記載の半導体装置の製造方法。
〔付記１７〕
前記第２工程においては、１つの前記介在部材に複数の前記第１金属接続材を接合する、付記１０ないし１６のいずれかに記載の半導体装置の製造方法。 [Appendix 1]
With semiconductor elements
A first metal connecting material that conducts to the semiconductor element and is made of a first metal,
Is equipped with
An intervening member made of a second metal that is interposed between the semiconductor element and the first metal connecting material and is softer than the first metal is further provided.
A semiconductor device in which a solid phase bonding interface exists both between the semiconductor element and the intervening member and between the first metal connecting material and the intervening member.
[Appendix 2]
The semiconductor device according to Appendix 1, wherein the first metal contains Cu.
[Appendix 3]
The semiconductor device according to Appendix 2, wherein the second metal contains any of Al, Ni and solder.
[Appendix 4]
The semiconductor device according to any one of Supplementary note 1 to 3, wherein the first metal connecting material is a metal wire.
[Appendix 5]
The semiconductor device according to any one of Supplementary note 1 to 3, wherein the first metal connecting material is a metal ribbon.
[Appendix 6]
The semiconductor device according to any one of Supplementary note 1 to 5, wherein the intervening member is a part of a metal wire.
[Appendix 7]
The semiconductor device according to any one of Supplementary note 1 to 5, wherein the intervening member is a part of a metal ribbon.
[Appendix 8]
The semiconductor device according to any one of Appendix 1 to 7, further comprising the plurality of intervening members in contact with each other.
[Appendix 9]
The method for manufacturing a semiconductor device according to any one of Supplementary note 1 to 7, wherein a plurality of the first metal connecting materials are joined to one of the intervening members.
[Appendix 10]
A method for manufacturing a semiconductor device, which comprises a semiconductor element and a first metal connecting material conductive to the semiconductor element and made of a first metal.
The first step of joining an intervening member made of a second metal, which is softer than the first metal, to the semiconductor element,
A second step of joining the first metal connecting material to the intervening member is provided.
In the first step, a process of solid-phase bonding by applying ultrasonic waves in a state where a part of the second metal connecting material made of the second metal is pressed against the semiconductor element, and the second metal connecting material. The process of forming the intervening member joined to the semiconductor element by cutting the metal element.
The second step is a method for manufacturing a semiconductor device, which comprises a process of solid-phase bonding by applying ultrasonic waves in a state where a part of the first metal connecting material is pressed against the intervening member.
[Appendix 11]
The method for manufacturing a semiconductor device according to Appendix 10, wherein the first metal contains Cu.
[Appendix 12]
The method for manufacturing a semiconductor device according to Appendix 11, wherein the second metal contains any of Al, Ni and solder.
[Appendix 13]
The method for manufacturing a semiconductor device according to any one of Appendix 10 to 12, wherein the first metal connecting material is a metal wire.
[Appendix 14]
The method for manufacturing a semiconductor device according to any one of Appendix 10 to 12, wherein the first metal connecting material is a metal ribbon.
[Appendix 15]
The method for manufacturing a semiconductor device according to any one of Appendix 10 to 14, wherein the second metal connecting material is a metal wire.
[Appendix 16]
The method for manufacturing a semiconductor device according to any one of Appendix 10 to 14, wherein the second metal connecting material is a metal ribbon.
[Appendix 17]
The method for manufacturing a semiconductor device according to any one of Appendix 10 to 16, wherein in the second step, a plurality of the first metal connecting materials are joined to one intervening member.

Ａ１，Ａ２，Ａ３，Ａ４：半導体装置
１ ：半導体素子
２ ：リード
３ ：介在部材
５ ：樹脂パッケージ
６ ：ウエッジツール
６Ａ ：ウエッジツール
１１ ：素子本体
１２ ：半導体素子
１９ ：導電性接合材
２１ ：第１リード
２２ ：第２リード
２３ ：第３リード
４１ ：第１金属接続材
４２ ：第３金属接続材
５１ ：樹脂主面
５２ ：樹脂裏面
５３ ：第１樹脂側面
５４ ：第２樹脂側面
５５ ：樹脂凹部
５６ ：樹脂貫通孔
６１，６１Ａ：ウエッジ
６２，６２Ａ：ワイヤガイド
６３，６３Ａ：カッタ
８１，８２：固相接合界面
１１１ ：素子主面
１１２ ：素子裏面
１２１ ：第１主面電極
１２２ ：第２主面電極
１２３ ：裏面電極
２１１ ：第１パッド部
２１１ａ ：パッド主面
２１１ｂ ：パッド裏面
２１１ｃ ：めっき層
２１１ｄ ：パッド貫通孔
２１２ ：第１端子部
２１３ ：中間連結部
２２１ ：第２パッド部
２２２ ：第２端子部
２３１ ：第３パッド部
２３２ ：第３端子部
３０１ ：第２金属接続材
４０１ ：第１金属接続材
４１１ ：第１ボンディング部
４１２ ：第２ボンディング部
４１３ ：ブリッジ部
６１１，６１１Ａ：ガイド溝 A1, A2, A3, A4: Semiconductor device 1: Semiconductor element 2: Lead 3: Intervening member 5: Resin package 6: Wedge tool 6A: Wedge tool 11: Element body 12: Semiconductor element 19: Conductive bonding material 21: No. 1 lead 22: 2nd lead 23: 3rd lead 41: 1st metal connecting material 42: 3rd metal connecting material 51: Resin main surface 52: Resin back surface 53: 1st resin side surface 54: 2nd resin side surface 55: Resin Recessed portion 56: Resin through hole 61, 61A: Wedge 62, 62A: Wire guide 63, 63A: Cutter 81, 82: Solid phase bonding interface 111: Element main surface 112: Element back surface 121: First main surface electrode 122: Second Main surface electrode 123: Back surface electrode 211: First pad portion 211a: Pad main surface 211b: Pad back surface 211c: Plating layer 211d: Pad through hole 212: First terminal portion 213: Intermediate connecting portion 221: Second pad portion 222: 2nd terminal part 231: 3rd pad part 232: 3rd terminal part 301: 2nd metal connecting material 401: 1st metal connecting material 411: 1st bonding part 412: 2nd bonding part 413: Bridge part 611, 611A: Guide groove

Claims (17)

半導体素子と、
前記半導体素子に導通し且つ第１金属からなる第１金属接続材と、
を備えており、
前記半導体素子と前記第１金属接続材との間に介在し、前記第１金属よりも軟質である第２金属からなる介在部材をさらに備え、
前記半導体素子と前記介在部材との間、および前記第１金属接続材と前記介在部材との間、の双方に固相接合界面が存在する、半導体装置。 With semiconductor elements
A first metal connecting material that conducts to the semiconductor element and is made of a first metal,
Is equipped with
An intervening member made of a second metal that is interposed between the semiconductor element and the first metal connecting material and is softer than the first metal is further provided.
A semiconductor device in which a solid phase bonding interface exists both between the semiconductor element and the intervening member and between the first metal connecting material and the intervening member. 前記第１金属は、Ｃｕを含む、請求項１に記載の半導体装置。 The semiconductor device according to claim 1, wherein the first metal contains Cu. 前記第２金属は、Ａｌ、Ｎｉおよびはんだのいずれかを含む、請求項２に記載の半導体装置。 The semiconductor device according to claim 2, wherein the second metal contains any of Al, Ni and solder. 前記第１金属接続材は、金属ワイヤである、請求項１ないし３のいずれかに記載の半導体装置。 The semiconductor device according to any one of claims 1 to 3, wherein the first metal connecting material is a metal wire. 前記第１金属接続材は、金属リボンである、請求項１ないし３のいずれかに記載の半導体装置。 The semiconductor device according to any one of claims 1 to 3, wherein the first metal connecting material is a metal ribbon. 前記介在部材は、金属ワイヤの一部である、請求項１ないし５のいずれかに記載の半導体装置。 The semiconductor device according to any one of claims 1 to 5, wherein the intervening member is a part of a metal wire. 前記介在部材は、金属リボンの一部である、請求項１ないし５のいずれかに記載の半導体装置。 The semiconductor device according to any one of claims 1 to 5, wherein the intervening member is a part of a metal ribbon. 互いに接し合う複数の前記介在部材を備える、請求項１ないし７のいずれかに記載の半導体装置。 The semiconductor device according to any one of claims 1 to 7, further comprising the plurality of intervening members in contact with each other. １つの前記介在部材に複数の前記第１金属接続材が接合されている、請求項１ないし７のいずれかに記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to any one of claims 1 to 7, wherein a plurality of the first metal connecting materials are joined to one of the intervening members. 半導体素子と前記半導体素子に導通し且つ第１金属からなる第１金属接続材を備える半導体装置の製造方法であって、
前記第１金属よりも軟質である第２金属からなる介在部材を前記半導体素子に接合する第１工程と、
前記介在部材に前記第１金属接続材を接合する第２工程と、を備え、
前記第１工程においては、前記第２金属からなる第２金属接続材の一部を前記半導体素子に押し付けた状態で超音波を付与することにより固相接合する処理と、前記第２金属接続材を切断することにより、前記半導体素子に接合された前記介在部材を形成する処理と、を含み、
前記第２工程においては、前記第１金属接続材の一部を前記介在部材に押し付けた状態で超音波を付与することにより固相接合する処理を含む、半導体装置の製造方法。 A method for manufacturing a semiconductor device, which comprises a semiconductor element and a first metal connecting material conductive to the semiconductor element and made of a first metal.
The first step of joining an intervening member made of a second metal, which is softer than the first metal, to the semiconductor element,
A second step of joining the first metal connecting material to the intervening member is provided.
In the first step, a process of solid-phase bonding by applying ultrasonic waves in a state where a part of the second metal connecting material made of the second metal is pressed against the semiconductor element, and the second metal connecting material. The process of forming the intervening member joined to the semiconductor element by cutting the metal element.
The second step is a method for manufacturing a semiconductor device, which comprises a process of solid-phase bonding by applying ultrasonic waves in a state where a part of the first metal connecting material is pressed against the intervening member. 前記第１金属は、Ｃｕを含む、請求項１０に記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to claim 10, wherein the first metal contains Cu. 前記第２金属は、Ａｌ、Ｎｉおよびはんだのいずれかを含む、請求項１１に記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to claim 11, wherein the second metal contains any of Al, Ni and solder. 前記第１金属接続材は、金属ワイヤである、請求項１０ないし１２のいずれかに記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to any one of claims 10 to 12, wherein the first metal connecting material is a metal wire. 前記第１金属接続材は、金属リボンである、請求項１０ないし１２のいずれかに記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to any one of claims 10 to 12, wherein the first metal connecting material is a metal ribbon. 前記第２金属接続材は、金属ワイヤである、請求項１０ないし１４のいずれかに記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to any one of claims 10 to 14, wherein the second metal connecting material is a metal wire. 前記第２金属接続材は、金属リボンである、請求項１０ないし１４のいずれかに記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to any one of claims 10 to 14, wherein the second metal connecting material is a metal ribbon. 前記第２工程においては、１つの前記介在部材に複数の前記第１金属接続材を接合する、請求項１０ないし１６のいずれかに記載の半導体装置の製造方法。 The method for manufacturing a semiconductor device according to any one of claims 10 to 16, wherein in the second step, a plurality of the first metal connecting materials are joined to one intervening member.
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