JP2015037151A - Semiconductor device - Google Patents
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- JP2015037151A JP2015037151A JP2013168880A JP2013168880A JP2015037151A JP 2015037151 A JP2015037151 A JP 2015037151A JP 2013168880 A JP2013168880 A JP 2013168880A JP 2013168880 A JP2013168880 A JP 2013168880A JP 2015037151 A JP2015037151 A JP 2015037151A
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Abstract
Description
本発明は、半導体装置に関し、特に半導体素子がワイヤ配線された半導体装置に関する。
The present invention relates to a semiconductor device, and more particularly to a semiconductor device in which semiconductor elements are wired.
一般的に、半導体素子上の電極パッドとリードフレームとをワイヤボンディングで接続し、モールド樹脂で封止する半導体装置がある。ワイヤボンディングは金細線を使用している。ワイヤボンディング技術に関しては、多種の検討がおこなわれている。
In general, there is a semiconductor device in which an electrode pad on a semiconductor element and a lead frame are connected by wire bonding and sealed with a mold resin. Wire bonding uses gold fine wires. Various studies have been made on wire bonding technology.
半導体素子の電極パッド上面に金ボールを形成し、その上に銅線のワイヤボンディングすることが従来技術として知られている。（例えば、特許文献１参照、図１、図３）これにより、材料コストが低減され、隣り合う電極パッド間のショートを防止することができる。
It is known as a prior art that a gold ball is formed on the upper surface of an electrode pad of a semiconductor element and wire bonding of a copper wire is performed thereon. (For example, refer patent document 1, FIG. 1, FIG. 3) Thereby, material cost can be reduced and the short circuit between adjacent electrode pads can be prevented.
一般に、コスト低減のために金細線を銅細線に変更することで材料コストを低減しているものである。また、銅細線は金細線に比べ、硬度が高く、半導体素子に衝撃が加わる。
Generally, the material cost is reduced by changing the gold fine wire to the copper fine wire for cost reduction. Further, the copper fine wire has higher hardness than the gold fine wire, and an impact is applied to the semiconductor element.
しかしながら、従来技術は、やわらかな金属ボールに銅ワイヤボンディングすることによって衝撃を吸収するは可能であるが、電極パッドの金属ボール上面にステッチボンドするため、下地がやわらかくワイヤカットがうまくできない懸念があるという課題がある。
また、電極パッドの下面に緩衝材層を配置することによって衝撃を吸収しているが、半導体素子構造が複雑になるため、製造コストが増加するという課題がある。
However, the conventional technology can absorb the impact by bonding copper wire to a soft metal ball, but since the bond is stitched on the upper surface of the metal ball of the electrode pad, there is a concern that the base is soft and wire cutting cannot be performed well. There is a problem.
Moreover, although the shock absorbing material layer is disposed on the lower surface of the electrode pad to absorb the impact, there is a problem that the manufacturing cost increases because the semiconductor element structure becomes complicated.
従って、本発明は、上述した課題を解決するためになされたものであり、半導体素子と銅ワイヤの接続信頼性を高め、ローコストの半導体装置を提供することを目的とする。
Accordingly, the present invention has been made to solve the above-described problems, and an object of the present invention is to provide a low-cost semiconductor device by improving the connection reliability between a semiconductor element and a copper wire.
上述の課題を解決するために、本発明は、以下に掲げる構成とした。
本発明の半導体装置は、リードフレームに半導体素子を搭載し、ワイヤ配線をおこない、モールド樹脂で樹脂封止し、リードフレームはダイパッドと端子を有し、ダイパッドの上面に接合材を介して半導体素子が固着され、半導体素子は上面に電極を有し、電極の上面にバンプを形成し、ワイヤはバンプ上にボールボンディングし、端子上にステッチボンディングするものである。
また、半導体素子の電極はアルミであり、バンプは金であり、ワイヤは銅であることを特徴とするものである。
In order to solve the above-described problems, the present invention has the following configurations.
The semiconductor device of the present invention includes a semiconductor element mounted on a lead frame, wire wiring is performed, and resin sealing is performed with a mold resin. The lead frame has a die pad and a terminal, and a semiconductor element is interposed on the upper surface of the die pad via a bonding material. The semiconductor element has electrodes on the upper surface, bumps are formed on the upper surfaces of the electrodes, the wires are ball bonded on the bumps, and stitch bonded on the terminals.
Further, the electrode of the semiconductor element is aluminum, the bump is gold, and the wire is copper.
本発明は、バンプ上にボールボンドするので、ワイヤボンディングの高信頼性の半導体装置を提供することができる効果を奏する。
また、一般的なアルミ電極構造の半導体素子と銅ワイヤ接続するので、ローコストの半導体装置を提供することができる効果を奏する。
According to the present invention, since the ball bonding is performed on the bump, it is possible to provide a highly reliable semiconductor device for wire bonding.
In addition, since a copper element is connected to a general semiconductor element having an aluminum electrode structure, it is possible to provide a low-cost semiconductor device.
以下、本発明を実施するための形態について、図を参照して詳細に説明する。ただし、本発明は以下の記載に何ら限定されるものではない。
DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments for carrying out the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description.
以下、図面を参照して本発明の実施例１に係る半導体装置１を説明する。図１は、本発明の実施例１に係る半導体装置１の平面透視図である。図２は、その断面側面図である。
Hereinafter, a semiconductor device 1 according to a first embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a plan perspective view of a semiconductor device 1 according to a first embodiment of the present invention. FIG. 2 is a sectional side view thereof.
図１に示すように、半導体装置１は、リードフレーム２と半導体素子３とワイヤ４とモールド樹脂５によって形成されている。
As shown in FIG. 1, the semiconductor device 1 is formed of a lead frame 2, a semiconductor element 3, a wire 4, and a mold resin 5.
リードフレーム２は、ダイパッド２１、インナーリード２２、アウターリード２３を有している。ダイパッド２１の上面には接合材を介して半導体素子２が搭載される。インナーリード２２は半導体素子３から配線されたワイヤ４の一端が接続される内部端子である。さらにアウターリード２３に繋がっている。アウターリード２３はモールド樹脂６から外部へ導出され、半導体装置１の外部端子となる。また、リードフレーム２は、熱伝導率の高い銅又は銅合金で構成され、例えばその厚さは０．５ｍｍ程度である。
The lead frame 2 has a die pad 21, inner leads 22, and outer leads 23. The semiconductor element 2 is mounted on the upper surface of the die pad 21 via a bonding material. The inner lead 22 is an internal terminal to which one end of the wire 4 wired from the semiconductor element 3 is connected. Further, it is connected to the outer lead 23. The outer lead 23 is led out from the mold resin 6 and becomes an external terminal of the semiconductor device 1. The lead frame 2 is made of copper or copper alloy having a high thermal conductivity, and has a thickness of about 0.5 mm, for example.
半導体素子３は、上面に電極６を有している。電極６は一般的なアルミ電極で構成されている。電極６の上面にはバンプ７が形成されている。半導体素子３は、トランジスタであり、例えば高温動作可能な化合物半導体素子の炭化珪素（ＳｉＣ）である。
The semiconductor element 3 has an electrode 6 on the upper surface. The electrode 6 is composed of a general aluminum electrode. Bumps 7 are formed on the upper surface of the electrode 6. The semiconductor element 3 is a transistor, for example, silicon carbide (SiC) which is a compound semiconductor element capable of operating at high temperature.
バンプ７は、金または金合金からなる細線で、ワイヤボンディングにおけるボールのみを形成したものである。例えば細線の直径は３８ミクロンの金線であり、バンプ７の直径は１２５ミクロンである。
The bumps 7 are thin wires made of gold or a gold alloy, and are formed only with balls in wire bonding. For example, the thin wire has a diameter of 38 microns and the bump 7 has a diameter of 125 microns.
ワイヤ４は、銅または銅合金からなる細線で、半導体素子３とリードフレーム２に接続される。詳しくは、半導体素子３の電極６の上部形成されたバンプ７にワイヤ４の一方の端部にボール８を形成しボールボンディングする（１ｓｔボンド）。さらに、リードフレーム２のインナーリード２２の上面にワイヤ４のもう一方の端部をステッチボンディングする（２ｎｄボンド）。例えば細線の直径は２８ミクロンの銅線であり、ボール８の直径は１００ミクロンである。
The wire 4 is a thin wire made of copper or a copper alloy, and is connected to the semiconductor element 3 and the lead frame 2. Specifically, a ball 8 is formed on one end of the wire 4 on the bump 7 formed on the electrode 6 of the semiconductor element 3 and ball-bonded (1st bond). Further, the other end of the wire 4 is stitch bonded to the upper surface of the inner lead 22 of the lead frame 2 (2nd bond). For example, the diameter of the thin wire is a 28 micron copper wire, and the diameter of the ball 8 is 100 microns.
モールド樹脂５は、リードフレーム２のダイパッド２１、インナーリード２２、半導体素子３、ワイヤ４を覆い、半導体装置１の外形形状を構成する。例えば半導体素子の動作温度に対する充分な耐熱性や絶縁性をもつ樹脂材料であるエポキシ樹脂をトランスファーモールド金型により樹脂成形される。
The mold resin 5 covers the die pad 21, the inner lead 22, the semiconductor element 3, and the wire 4 of the lead frame 2 and constitutes the outer shape of the semiconductor device 1. For example, an epoxy resin, which is a resin material having sufficient heat resistance and insulation with respect to the operating temperature of the semiconductor element, is molded by a transfer mold.
図３に示すように、半導体装置１の製造方法は、リードフレーム２のダイパッド２１に接合材であるはんだ等（図示せず）を介して、半導体素子３を搭載し固着する。（ａ：マウント工程）
As shown in FIG. 3, in the manufacturing method of the semiconductor device 1, the semiconductor element 3 is mounted and fixed to the die pad 21 of the lead frame 2 via solder or the like (not shown) as a bonding material. (A: Mounting process)
金線ワイヤボンディング装置を用いて、半導体素子３の電極６の上面にバンプ７を形成する。（ｂ：バンプ工程）
A bump 7 is formed on the upper surface of the electrode 6 of the semiconductor element 3 using a gold wire bonding apparatus. (B: Bump process)
銅線ワイヤボンディング装置を用いて、半導体素子３の電極６の上面のバンプ７とリードフレーム２のインナーリード（端子）２２間をワイヤ４にて電気的機械的に接続する。（ｃ：ワイヤ工程）
A wire 4 is used to electrically connect the bumps 7 on the upper surface of the electrode 6 of the semiconductor element 3 and the inner leads (terminals) 22 of the lead frame 2 using a copper wire bonding apparatus. (C: Wire process)
次に、トランスファー金型を用いて、モールド樹脂５でリードフレーム２のダイパッド２１、インナーリード２２、半導体素子３、ワイヤ４を覆い、樹脂封止する。（ｄ：モールド工程）
Next, using a transfer mold, the die pad 21, the inner lead 22, the semiconductor element 3, and the wire 4 of the lead frame 2 are covered with the mold resin 5 and sealed with resin. (D: Molding process)
以上により、半導体装置１が完成する。
Thus, the semiconductor device 1 is completed.
次に、上述の実施例１に係る半導体装置１の効果を説明する。
Next, effects of the semiconductor device 1 according to the first embodiment will be described.
本発明の実施例１に係る半導体装置１は、半導体素子の電極上にバンプを設け、ボールボンドしている。これにより、半導体素子の電極上において、容易にボンディングすることが可能である。
In the semiconductor device 1 according to the first embodiment of the present invention, bumps are provided on the electrodes of the semiconductor elements and ball bonded. Thereby, it is possible to bond easily on the electrode of the semiconductor element.
また、ボンディングダメージを対処するためバリアメタルを電極下面に設ける必要があるが、金のやわらかいバンプがあるので、半導体素子の電極はアルミのみの電極構造とすることが可能である。これにより、バリアメタルを備える半導体素子より低コストで製造することができる。また、特殊な製造工程を必要としない低コストの半導体装置とすることができる。
In order to deal with bonding damage, it is necessary to provide a barrier metal on the lower surface of the electrode. However, since there are soft gold bumps, the electrode of the semiconductor element can have an electrode structure made of only aluminum. Thereby, it can be manufactured at a lower cost than a semiconductor element provided with a barrier metal. In addition, a low-cost semiconductor device that does not require a special manufacturing process can be obtained.
バンプの直径を銅ワイヤのボール直径より大きくするするので、ボールボンド（１ｓｔ）時のワイヤボンディング装置の認識ズレを吸収することができる。
Since the bump diameter is made larger than the ball diameter of the copper wire, it is possible to absorb the misalignment of the wire bonding apparatus during ball bonding (1st).
また、半導体素子側をボールボンドするので、素子端面、特に高耐圧素子の端面とワイヤのクリアランスの確保が充分に取ることができる。
Further, since the semiconductor element side is ball-bonded, it is possible to sufficiently secure the clearance between the element end face, in particular, the end face of the high withstand voltage element and the wire.
また、半導体素子側をボールボンドするため、ワイヤボンディングツール（キャピラリ）がバンプと接触することがないので、銅線のワイヤボンディングツールに金のカスが付着せず、ツールの寿命を向上させることができる。
Also, since the semiconductor element side is ball bonded, the wire bonding tool (capillary) does not come into contact with the bumps, so that no gold residue adheres to the copper wire wire bonding tool, thereby improving the tool life. it can.
また、半導体素子側をボールボンドするので、半導体素子の電極を認識して、または、半導体素子基準を認識して電極位置を算出するので、ボンディング位置精度が保てる。通常２ｎｄは１ｓｔからの計算によって算出される。
In addition, since the semiconductor element side is ball-bonded, the electrode position is calculated by recognizing the electrode of the semiconductor element or by recognizing the semiconductor element reference, so that the bonding position accuracy can be maintained. Usually, 2nd is calculated by calculation from 1st.
また、ステッチボンドはカット難度が高いがインナーリード側なので、カットスペースが確保でき、カット動作が容易におこなえる。
The stitch bond has a high degree of difficulty in cutting, but since it is on the inner lead side, a cutting space can be secured and the cutting operation can be easily performed.
また、硬い銅ワイヤを用いるので、モールド樹脂の応力はワイヤに伝わり半導体素子の電極にも応力がかかるが、やわらかい金のバンプを備えるので、半導体素子の電極の応力を緩和することができる。
In addition, since a hard copper wire is used, the stress of the mold resin is transmitted to the wire, and stress is also applied to the electrodes of the semiconductor element. However, since the soft gold bumps are provided, the stress of the electrodes of the semiconductor element can be relieved.
また、銅ワイヤを用いるので、溶断電流は金線よりも大きく、電気抵抗が低いので、銅の細線化が可能である。これにより、大電流の対応した半導体装置とすることができる。さらに溶断はワイヤーループの中央部で発生するので、金バンプがあっても、影響は無い。
Further, since a copper wire is used, the fusing current is larger than that of the gold wire and the electric resistance is low, so that the copper can be thinned. Thereby, it can be set as the semiconductor device corresponding to a large current. Furthermore, since fusing occurs at the center of the wire loop, there is no effect even if there are gold bumps.
上述のように、本発明を実施するための形態を記載したが、この開示から当業者には様々な代替実施の形態、実施例が可能であることが明らかになるはずである。
As described above, the mode for carrying out the present invention has been described. From this disclosure, it should be apparent to those skilled in the art that various alternative embodiments and examples are possible.
上述の例では、モールド樹脂をエポキシ樹脂としたが、ブロム（Ｂｒ）非含有のハロゲンフリー樹脂としてもよい。これにより、接合界面のＡｕ−Ａｌ金属間化合物からＡｌのみを選択的に電極が腐食していくことを防止できる。
In the above example, the mold resin is an epoxy resin, but a halogen-free resin containing no bromine (Br) may be used. Thereby, it can prevent that an electrode selectively corrodes only Al from the Au-Al intermetallic compound of a joining interface.
また、金と銅のワイヤボンディング装置を個々に２台としたたが、1台で２ヘッド方式し、１ヘッド目が金パンプを形成し、２ヘッド目が銅ワイヤを形成するとしてもよい。これにより、ワイヤボンディングの設備効率や生産性を向上させることができる。
In addition, although two gold and copper wire bonding apparatuses are used individually, it is also possible to use a two-head system with one unit, the first head forming a gold pump, and the second head forming a copper wire. Thereby, the equipment efficiency and productivity of wire bonding can be improved.
また、リードフレームを銅又は銅合金としたが、アルミニウム又はアルミニウム合金であってもよい。これにより、材料費を低減することができる。ただし、その表面には、接合材料やワイヤが接合可能なように、各種めっき処理が施されていることが好ましい。また、リードフレームに絶縁シート等を介して放熱板を接合することも可能である。これらにより、さらに放熱性を向上させることができる。
Further, although the lead frame is made of copper or copper alloy, it may be made of aluminum or aluminum alloy. Thereby, material cost can be reduced. However, the surface is preferably subjected to various plating treatments so that a bonding material or a wire can be bonded. It is also possible to join a heat sink to the lead frame via an insulating sheet or the like. By these, heat dissipation can be further improved.
また、半導体素子をＳｉＣで構成されたものとしたが、例えば窒化ガリウム（ＧａＮ）、シリコン（Ｓｉ）等で構成することもできる。これにより、上述の構成や効果が変わることはない。
In addition, the semiconductor element is made of SiC, but may be made of, for example, gallium nitride (GaN), silicon (Si), or the like. Thereby, the above-mentioned structure and effect do not change.
また、半導体パケージも任意の形状を選択することができる。ＤＩＰ型、ＳＩＰ型、ＱＦＮ型であってもよい。
Also, any shape of the semiconductor package can be selected. It may be a DIP type, SIP type, or QFN type.
また、上述の例では、単一の半導体素子としたが、リードフレームの上に複数の半導体素子が搭載されていてもよい。ＳｉＣとＧａＮ等との組み合わせでもよい。また、独立した複数のリードフレームが用いられていてもよく、この際、リードフレームの構成が各々で異なっていてもよいことは明らかであり、例えば搭載する半導体素子の発熱量等に応じてリードフレームの構成を異ならせることもできる。すなわち、半導体装置内におけるリードフレームや半導体素子やパッケージの構成は、上述の効果を奏する限りにおいて適宜設定することができる。
In the above example, a single semiconductor element is used. However, a plurality of semiconductor elements may be mounted on the lead frame. A combination of SiC and GaN may be used. In addition, a plurality of independent lead frames may be used. In this case, it is obvious that the configuration of the lead frames may be different from each other. The structure of the frame can also be varied. That is, the configuration of the lead frame, the semiconductor element, and the package in the semiconductor device can be set as appropriate as long as the above-described effects are obtained.
１、半導体装置
２、リードフレーム
３、半導体素子
４、ワイヤ
５、モールド樹脂
６、電極
７、バンプ
８、ボール
２１、ダイパッド
２２、インナーリード（端子）
２３、アウターリード
DESCRIPTION OF SYMBOLS 1, Semiconductor device 2, Lead frame 3, Semiconductor element 4, Wire 5, Mold resin 6, Electrode 7, Bump 8, Ball 21, Die pad 22, Inner lead (terminal)
23, outer lead
Claims (4)
前記リードフレームはダイパッドと端子を有し、前記ダイパッドの上面に接合材を介して前記半導体素子が固着され、前記半導体素子は上面に電極を有し、前記電極の上面にバンプを形成し、前記ワイヤは前記バンプ上にボールボンディングし、前記端子上にステッチボンディングすることを特徴とする半導体装置。
A semiconductor device in which a semiconductor element is mounted on a lead frame, wire wiring is performed, and resin sealing is performed with a mold resin.
The lead frame has a die pad and a terminal, the semiconductor element is fixed to the upper surface of the die pad via a bonding material, the semiconductor element has an electrode on the upper surface, and a bump is formed on the upper surface of the electrode, A semiconductor device, wherein the wire is ball-bonded on the bump and stitch-bonded on the terminal.
2. The semiconductor device according to claim 1, wherein the electrode of the semiconductor element is aluminum, the bump is gold, and the wire is copper.
The semiconductor device according to claim 1, wherein a size of the bump is larger than a size of the ball bonding.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7412998B2 (en) | 2019-12-12 | 2024-01-15 | ローム株式会社 | Semiconductor device and semiconductor device manufacturing method |
| WO2024029286A1 (en) * | 2022-08-03 | 2024-02-08 | ローム株式会社 | Semiconductor device and method for manufacturing semiconductor device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7412998B2 (en) | 2019-12-12 | 2024-01-15 | ローム株式会社 | Semiconductor device and semiconductor device manufacturing method |
| WO2024029286A1 (en) * | 2022-08-03 | 2024-02-08 | ローム株式会社 | Semiconductor device and method for manufacturing semiconductor device |
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