JP2021086977A - 半導体装置およびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 100
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000011370 conductive nanoparticle Substances 0.000 claims abstract description 164
- 239000000853 adhesive Substances 0.000 claims abstract description 71
- 230000001070 adhesive effect Effects 0.000 claims abstract description 71
- 210000004027 cell Anatomy 0.000 claims description 356
- 238000000034 method Methods 0.000 claims description 46
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- 238000003825 pressing Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 210000002858 crystal cell Anatomy 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910003437 indium oxide Inorganic materials 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 246
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 41
- 238000005516 engineering process Methods 0.000 description 34
- 230000031700 light absorption Effects 0.000 description 29
- 230000003746 surface roughness Effects 0.000 description 18
- 239000000463 material Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 239000013078 crystal Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- 238000005304 joining Methods 0.000 description 11
- 238000010248 power generation Methods 0.000 description 8
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 229920001400 block copolymer Polymers 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 230000006872 improvement Effects 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000005361 soda-lime glass Substances 0.000 description 5
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 4
- 229910021645 metal ion Inorganic materials 0.000 description 4
- 239000002105 nanoparticle Substances 0.000 description 4
- KGIGUEBEKRSTEW-UHFFFAOYSA-N 2-vinylpyridine Chemical compound C=CC1=CC=CC=N1 KGIGUEBEKRSTEW-UHFFFAOYSA-N 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 241000549556 Nanos Species 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical group CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000224 chemical solution deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000002109 crystal growth method Methods 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 101150003085 Pdcl gene Proteins 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- QCUOBSQYDGUHHT-UHFFFAOYSA-L cadmium sulfate Chemical compound [Cd+2].[O-]S([O-])(=O)=O QCUOBSQYDGUHHT-UHFFFAOYSA-L 0.000 description 1
- 229910000331 cadmium sulfate Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- -1 polydimethylsiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/043—Mechanically stacked PV cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
Description
本実施の形態1における技術的思想は、互いに異なる半導体材料から構成される第1半導体素子と第2半導体素子とを電気的に接続しながら積層する半導体装置に幅広く適用することができるが、以下では、太陽電池を例に挙げて、この技術的思想を説明する。
太陽電池は、太陽光の光エネルギーを電気エネルギーに変換する太陽電池素子から構成されている。ここで、太陽光には、様々な光エネルギーを有する光が含まれており、太陽電池素子のバンドギャップ以上のエネルギーを有する光は、太陽電池素子に吸収されて電気エネルギーに変換することができる。一方、太陽光のうち、太陽電池素子のバンドギャップよりも小さいエネルギーを有する光は、太陽電池素子に吸収されない。
図3は、多接合太陽電池の模式的な構成を示す断面図である。
次に、接合層120について説明する。
多接合太陽電池10は、上記のように構成されており、以下では、図3を参照しながら、多接合太陽電池10の動作について説明する。
続いて、本実施の形態1における特徴点について説明する。
続いて、多接合太陽電池10の製造方法について図面を参照しながら説明する。
以下では、導電性ナノ粒子と接着剤とを使用した接合工程の詳細について説明する。
続いて、本実施の形態1における多接合太陽電池の製法上の特徴点について説明する。
次に、本実施の形態1における効果について説明する。
続いて、接着剤116を追加することによる影響について説明する。
図10は、本実施の形態2における太陽電池の模式的な構成を示す図である。
図14は、本実施の形態3における太陽電池の模式的な構成を示す図である。
1A 導電性ナノ粒子
1B 導電性ナノ粒子
1C 導電性ナノ粒子
10 多接合太陽電池
20 太陽電池
30 太陽電池
100 ソーダライムガラス基板
101 裏面電極
102 光吸収層
103 バッファ層
104 透明電極
105 導電性ナノ粒子
105A 導電性ナノ粒子
105B 導電性ナノ粒子
105C 導電性ナノ粒子
106 p+型AlGaAs層
107 p型GaAs層
108 n型GaAs層
109 n+型InGaP層
110 トンネル接合
111 p+型InAlP層
112 p型GaInP層
113 n型GaInP層
114 n+型InAlP層
115 表面電極
116 接着剤
120 接合層
300 p型シリコン基板
301 p型電極
302 n型シリコン層
303 p型GaAs層
304 p型AlGaAs層
305 n型GaAs層
306 トンネル接合
307 p型InGaP層
308 n型InGaP層
309 n型InAlP層
310 n型電極
S1〜S4 界面
SB1〜SB8 太陽電池素子
Claims (8)
- 第1接合面を有する第1半導体素子と、
前記第1接合面と対向する第2接合面を有する第2半導体素子と、
前記第1接合面と前記第2接合面に接し、かつ、透光性を有する接合層と、
を備える、半導体装置であって、
前記接合層は、
前記第1半導体素子と前記第2半導体素子とを電気的に接続する複数の導電性ナノ粒子と、
前記複数の導電性ナノ粒子の間を充填する接着剤と、
を含み、
前記第1接合面は、
前記接合層の最小厚の2/3以下の凹凸を有する平坦面と、
前記平坦面を基準として前記接合層の最小厚の2倍以上の深さを有する凹部と、
を有する、半導体装置。 - 請求項1に記載の半導体装置において、
前記複数の導電性ナノ粒子は、規則的に配置され、
前記複数の導電性ナノ粒子のそれぞれは、パラジウム、金、銀、プラチナ、ニッケル、アルミニウム、インジウム、酸化インジウム、亜鉛、酸化亜鉛、銅のいずれかを含有する、半導体装置。 - 請求項1または2に記載の半導体装置において、
前記複数の導電性ナノ粒子は、
前記第1接合面と前記第2接合面との間に介在し、かつ、前記第1接合面と前記第2接合面との間の電気的な接続に寄与する第1導電性ナノ粒子と、
前記第1接合面と前記第2接合面との間に介在し、かつ、前記第1接合面と前記第2接合面との間の電気的な接続に寄与しない第2導電性ナノ粒子と、
を含む、半導体装置。 - 請求項3に記載の半導体装置において、
前記第1導電性ナノ粒子と前記第2導電性ナノ粒子とは、形状が異なり、
前記第1導電性ナノ粒子の高さは、前記第2導電性ナノ粒子の高さよりも小さい、半導体装置。 - 請求項1〜4のいずれか1項に記載の半導体装置において、
前記第1半導体素子は、第1波長域の光を吸収可能な第1太陽電池セルであり、
前記第2半導体素子は、前記第1波長域よりも短い第2波長域の光を吸収可能な第2太陽電池セルである、半導体装置。 - 請求項5に記載の半導体装置において、
前記第1太陽電池セルは、多結晶セルであり、
前記第2太陽電池セルは、単結晶セルである、半導体装置。 - (a)第1接合面を有する第1半導体素子を準備する工程、
(b)第2接合面を有する第2半導体素子を準備する工程、
(c)前記第1接合面上に複数の導電性ナノ粒子を配置する工程、
(d)前記(c)工程の後、前記第1接合面に接着剤を塗布する工程、
(e)前記(d)工程の後、前記複数の導電性ナノ粒子と前記接着剤とを介して前記第1接合面に前記第2接合面を対向させて押圧する工程、
を備える、半導体装置の製造方法。 - 請求項7に記載の半導体装置の製造方法において、
前記(e)工程は、加熱することなく実施される、半導体装置の製造方法。
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JP2019216602A JP7416403B2 (ja) | 2019-11-29 | 2019-11-29 | 半導体装置およびその製造方法 |
PCT/JP2020/036065 WO2021106339A1 (ja) | 2019-11-29 | 2020-09-24 | 半導体装置およびその製造方法 |
US17/780,165 US20220416103A1 (en) | 2019-11-29 | 2020-09-24 | Semiconductor device and method of manufacturing the same |
CN202080077288.6A CN114667610A (zh) | 2019-11-29 | 2020-09-24 | 半导体装置及其制造方法 |
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WO2023243248A1 (ja) * | 2022-06-14 | 2023-12-21 | 国立研究開発法人産業技術総合研究所 | 半導体装置、半導体装置の製造方法、太陽電池、太陽電池の製造方法 |
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