JP2021057538A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2021057538A JP2021057538A JP2019181794A JP2019181794A JP2021057538A JP 2021057538 A JP2021057538 A JP 2021057538A JP 2019181794 A JP2019181794 A JP 2019181794A JP 2019181794 A JP2019181794 A JP 2019181794A JP 2021057538 A JP2021057538 A JP 2021057538A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide semiconductor
- gate electrode
- region
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 144
- 229910052751 metal Inorganic materials 0.000 claims abstract description 47
- 239000002184 metal Substances 0.000 claims abstract description 47
- 150000004767 nitrides Chemical class 0.000 claims abstract description 33
- 229910044991 metal oxide Inorganic materials 0.000 claims description 41
- 150000004706 metal oxides Chemical class 0.000 claims description 41
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical group [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 20
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 11
- 239000010936 titanium Substances 0.000 claims description 7
- 229910017107 AlOx Inorganic materials 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 29
- 239000001301 oxygen Substances 0.000 abstract description 29
- 229910052760 oxygen Inorganic materials 0.000 abstract description 29
- 239000010408 film Substances 0.000 description 175
- 239000000758 substrate Substances 0.000 description 41
- 239000004973 liquid crystal related substance Substances 0.000 description 28
- 239000010410 layer Substances 0.000 description 14
- 239000002585 base Substances 0.000 description 13
- 239000011521 glass Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 239000004642 Polyimide Substances 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 229920001721 polyimide Polymers 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 7
- 238000002161 passivation Methods 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000010953 base metal Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004156 TaNx Inorganic materials 0.000 description 1
- -1 Zinc Oxide Nitride Chemical class 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
Abstract
Description
Claims (18)
- ゲート電極の上にゲート絶縁膜が形成され、前記ゲート絶縁膜の上に酸化物半導体膜が形成されたTFTを有する半導体装置であって、
前記酸化物半導体膜は、チャネル領域、ドレイン領域、ソース領域を有し、
平面で視て、前記ゲート電極の上面で、前記酸化物半導体膜の前記チャネル領域と対向する部分には、金属窒化膜が形成され、
前記ゲート電極の上面の一部は前記金属窒化膜が存在していないことを特徴とする半導体装置。 - 平面で視て、前記ゲート電極の上面の、前記酸化物半導体膜の前記ドレイン領域、前記ソース領域に対応する部分には、前記金属窒化膜は存在しないことを特徴とする請求項1に記載の半導体装置。
- 前記酸化物半導体膜は、前記チャネル領域と前記ドレイン領域の間、及び、前記チャネル領域と前記ソース領域の間に中間抵抗領域を有し、
前記ゲート電極の上面の、前記酸化物半導体膜の前記中間抵抗領域に対応する部分には前記金属窒化膜は形成されておらず、前記酸化物半導体膜の前記ドレイン領域及び前記ソース領域に対応する部分には、前記金属窒化膜が形成されていることを特徴とする請求項1に記載の半導体装置。 - 前記ゲート電極の側面にも前記金属窒化膜が形成されていることを特徴とする請求項1に記載の半導体装置。
- 前記金属窒化膜は窒化チタン(TiN)であることを特徴とする請求項1に記載の半導体装置。
- 前記ゲート電極は、Al層の上にTi層が形成された構成であることを特徴とする請求項1に記載の半導体装置。
- ゲート電極の上にゲート絶縁膜が形成され、前記ゲート絶縁膜の上に酸化物半導体膜が形成されたTFTを有する半導体装置であって、
前記酸化物半導体膜は、チャネル領域、ドレイン領域、ソース領域を有し、
平面で視て、前記ゲート電極の上面で、前記酸化物半導体膜の前記チャネル領域と対向する部分には、金属酸化膜が形成され、
前記ゲート電極の上面の一部は前記金属酸化膜が存在していないことを特徴とする半導体装置。 - 平面で視て、前記ゲート電極の上面の、前記酸化物半導体膜の前記ドレイン領域、前記ソース領域に対応する部分には、前記金属酸化膜は存在しないことを特徴とする請求項7に記載の半導体装置。
- 前記酸化物半導体膜は、前記チャネル領域と前記ドレイン領域の間、及び、前記チャネル領域と前記ソース領域の間に中間抵抗領域を有し、
前記ゲート電極の上面の、前記酸化物半導体膜の前記中間抵抗領域に対応する部分には前記金属酸化膜は形成されておらず、前記酸化物半導体膜の前記ドレイン領域及び前記ソース領域に対応する部分には、前記金属酸化膜が形成されていることを特徴とする請求項7に記載の半導体装置。 - 前記ゲート電極の側面にも前記金属酸化膜が形成されていることを特徴とする請求項7に記載の半導体装置。
- 前記金属酸化膜は導電性の金属酸化膜であることを特徴とする請求項7に記載の半導体装置。
- 前記金属酸化膜はITOであることを特徴とする請求項7に記載の半導体装置。
- 前記金属酸化膜は、前記酸化物半導体膜とは別に形成された酸化物半導体膜であることを特徴とする請求項7に記載の半導体装置。
- ゲート電極の上にゲート絶縁膜が形成され、前記ゲート絶縁膜の上に酸化物半導体膜が形成されたTFTを有する半導体装置であって、
前記酸化物半導体膜は、チャネル領域、ドレイン領域、ソース領域を有し、
平面で視て、前記ゲート電極の上面で、前記酸化物半導体膜の前記チャネル領域と対向する部分には、絶縁性金属酸化膜が形成され、
前記ゲート電極の上面の一部は前記絶縁性金属酸化膜が存在していないことを特徴とする半導体装置。 - 平面で視て、前記ゲート電極の上面の、前記酸化物半導体膜の前記ドレイン領域、前記ソース領域に対応する部分には、前記絶縁性金属酸化膜は存在しないことを特徴とする請求項14に記載の半導体装置。
- 前記酸化物半導体膜は、前記チャネル領域と前記ドレイン領域の間、及び、前記チャネル領域と前記ソース領域の間に中間抵抗領域を有し、
前記ゲート電極の上面の、前記酸化物半導体の前記中間抵抗領域に対応する部分には前記絶縁性金属酸化膜は形成されておらず、前記酸化物半導体膜の前記ドレイン領域及び前記ソース領域に対応する部分には、前記絶縁性金属酸化膜が形成されていることを特徴とする請求項14に記載の半導体装置。 - 前記ゲート電極の側面にも前記絶縁性金属酸化膜が形成されていることを特徴とする請求項14に記載の半導体装置。
- 前記絶縁性金属酸化膜はアルミナ(AlOx)膜であることを特徴とする請求項14に記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019181794A JP7446076B2 (ja) | 2019-10-02 | 2019-10-02 | 半導体装置 |
PCT/JP2020/035034 WO2021065506A1 (ja) | 2019-10-02 | 2020-09-16 | 半導体装置 |
CN202080065097.8A CN114467184A (zh) | 2019-10-02 | 2020-09-16 | 半导体装置 |
US17/657,168 US20220223707A1 (en) | 2019-10-02 | 2022-03-30 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019181794A JP7446076B2 (ja) | 2019-10-02 | 2019-10-02 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021057538A true JP2021057538A (ja) | 2021-04-08 |
JP7446076B2 JP7446076B2 (ja) | 2024-03-08 |
Family
ID=75271546
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019181794A Active JP7446076B2 (ja) | 2019-10-02 | 2019-10-02 | 半導体装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20220223707A1 (ja) |
JP (1) | JP7446076B2 (ja) |
CN (1) | CN114467184A (ja) |
WO (1) | WO2021065506A1 (ja) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9754971B2 (en) | 2013-05-18 | 2017-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR102290801B1 (ko) | 2013-06-21 | 2021-08-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
US9461126B2 (en) | 2013-09-13 | 2016-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, clocked inverter circuit, sequential circuit, and semiconductor device including sequential circuit |
-
2019
- 2019-10-02 JP JP2019181794A patent/JP7446076B2/ja active Active
-
2020
- 2020-09-16 CN CN202080065097.8A patent/CN114467184A/zh active Pending
- 2020-09-16 WO PCT/JP2020/035034 patent/WO2021065506A1/ja active Application Filing
-
2022
- 2022-03-30 US US17/657,168 patent/US20220223707A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
JP7446076B2 (ja) | 2024-03-08 |
WO2021065506A1 (ja) | 2021-04-08 |
US20220223707A1 (en) | 2022-07-14 |
CN114467184A (zh) | 2022-05-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10459304B2 (en) | Display device | |
CN107479267B (zh) | 液晶显示面板及具有该液晶显示面板的液晶显示装置 | |
JP7370375B2 (ja) | 表示装置及び半導体装置 | |
JP6655417B2 (ja) | 表示装置 | |
JP7350903B2 (ja) | Tft回路基板 | |
US20230144213A1 (en) | Display device | |
WO2020021938A1 (ja) | 表示装置 | |
WO2013021607A1 (ja) | 液晶表示装置、および液晶表示装置の製造方法 | |
US20140284574A1 (en) | Display apparatus and method of manufacturing the same | |
JP7250558B2 (ja) | 表示装置及び半導体装置 | |
JP2018170325A (ja) | 表示装置 | |
US20220262825A1 (en) | Display device and manufacturing method thereof | |
US9703152B2 (en) | Liquid crystal display device | |
WO2019244636A1 (ja) | 半導体装置 | |
JP7029907B2 (ja) | 表示装置 | |
JP7109902B2 (ja) | 表示装置及びその製造方法 | |
JP7274627B2 (ja) | 表示装置 | |
WO2021065506A1 (ja) | 半導体装置 | |
US20210320158A1 (en) | Display device and semiconductor device | |
KR100641000B1 (ko) | 액정표시소자 및 그 제조방법 | |
KR100675926B1 (ko) | 액정표시소자와 그 제조방법 | |
JP2019016640A (ja) | 表示装置 | |
KR20080048620A (ko) | 박막 트랜지스터 기판 및 이를 갖는 액정표시장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220930 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230905 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20231101 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240130 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240227 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7446076 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |